专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US4397328A Cleaning apparatus of tubular materials for use in pickling facilities for the same 失效
标题翻译：用于酸洗设备的管状材料的清洁装置
公开(公告)号：US4397328A
公开(公告)日：1983-08-09
申请号：US308823
申请日：1981-10-05
申请人： Yoshiro Tanaka , Hayato Moroi , Yukihiko Kamatsu , Kazuo Akagi , Ryujiro Shitamatsu , Tadashi Nishimura
发明人： Yoshiro Tanaka , Hayato Moroi , Yukihiko Kamatsu , Kazuo Akagi , Ryujiro Shitamatsu , Tadashi Nishimura
IPC分类号： B65G49/04 , C23G3/04 , B08B3/02
CPC分类号： C23G3/04
摘要： A cleaning apparatus for use in pickling facilities for tubular members such as zirconium or zirconium alloy tubes. The apparatus includes a travelling crane for conveying and loading the tubular members from one cleaning tank to another, a pair of endless wrapping connectors such as endless chains spacedly and circulatably provided in at least one tank, for example, in a first cleaning tank filled with slightly warm water below the level of its cleaning fluid, and a plurality of feed claws provided with an interval therebetween on each of the endless wrapping connectors along the length of the same so as to prevent the tubular members from contacting one another during cleaning treatment. Thus, development of stain or physical damage such as scratches or dents is eliminated or minimized. It is possible to tentatively stock the tubular members on the endless wrapping connectors so as to perform a smooth and continuous pickling and cleaning operation of such tubular members.
摘要翻译：一种用于诸如锆或锆合金管的管状构件的酸洗设备的清洁装置。该设备包括用于将管状构件从一个清洁槽输送和装载到另一个清洁槽的移动式起重机，一对环形缠绕连接器，例如在至少一个罐中间隔并且可循环地设置的环形链，例如在填充有稍微温水低于其清洁液的水平面，以及多个进给爪，其沿着其长度在每个环形缠绕连接器上设置有间隔，以防止管状构件在清洁处理期间彼此接触。因此，消除或最小化污渍或物理损伤如划痕或凹陷的发展。可以暂时将管状部件储存在环形包装连接器上，以便执行这种管状部件的平滑且连续的酸洗和清洁操作。

2. 发明授权

US4392506A Apparatus for conveying tubular materials in pickling facilities of the same 失效
标题翻译：用于在其酸洗设备中输送管状材料的设备
公开(公告)号：US4392506A
公开(公告)日：1983-07-12
申请号：US307670
申请日：1981-10-01
申请人： Yoshiro Tanaka , Hayato Moroi , Yukihiko Komatsu , Kazuo Akagi , Ryujiro Shitamatsu , Tadashi Nishimura
发明人： Yoshiro Tanaka , Hayato Moroi , Yukihiko Komatsu , Kazuo Akagi , Ryujiro Shitamatsu , Tadashi Nishimura
IPC分类号： B65G49/04 , B08B3/04 , B66C11/08 , B66C17/06 , C23G3/04
CPC分类号： C23G3/04
摘要： An apparatus for conveying tubular members along a plurality of treatment liquid tanks in pickling facilities. The apparatus includes a pair of guide rails and a travelling car adapted to reciprocate on the guide rails. The travelling car includes at least one pair of tube-supporting hooks which can be reciprocated upwardly and downwardly and turned between positions parallel to the rails and other positions perpendicular to the rails. The tube-supporting hooks can be lowered or raised independently so as to support the tubular members aslant near the treatment liquid level in each of the treatment liquid tanks, thereby allowing immersion of the tubular members into the treatment liquid or retraction of the tubular members out of the treatment liquid without forming considerable air bubbles in the liquid. Since such bubbles are known to develop stains on the tubular members, tubular members of high surface quality can be obtained. The above apparatus also permits a smooth, simple and efficient conveyance and loading and unloading of tubular members between the treatment liquid tanks.
摘要翻译：一种用于在酸洗设备中沿着多个处理液体罐输送管状构件的装置。该装置包括一对导轨和适于在导轨上往复运动的行进车。行进车包括至少一对管支撑钩，其可以向上和向下往复运动，并且在平行于轨道的位置和垂直于轨道的其它位置之间转动。管支撑钩可以独立地降低或升高，以支撑在每个处理液体槽中靠近处理液面倾斜的管状构件，从而允许将管状构件浸入处理液体中或将管状构件收回的处理液体，而不会在液体中形成相当大的气泡。由于已知这种气泡在管状部件上产生污渍，因此可获得高表面质量的管状部件。上述设备还允许在处理液体罐之间顺利，简单且有效地传送和装载和卸载管状构件。

3. 发明授权

US4392267A Apparatus for continuously pickling the outer surfaces of tubular materials 失效
标题翻译：用于连续酸洗管状材料外表面的装置
公开(公告)号：US4392267A
公开(公告)日：1983-07-12
申请号：US307676
申请日：1981-10-01
申请人： Yoshiro Tanaka , Hayato Moroi , Yukihiko Komatsu , Kazuo Akagi , Ryujiro Shitamatsu , Tadashi Nishimura
发明人： Yoshiro Tanaka , Hayato Moroi , Yukihiko Komatsu , Kazuo Akagi , Ryujiro Shitamatsu , Tadashi Nishimura
IPC分类号： B65G13/00 , C23G3/04 , B08B9/02
CPC分类号： C23G3/04
摘要： An apparatus for continuously pickling the outer surfaces of hermetically plugged tubular members is described. The apparatus includes a plurality of liquid tanks which separately contain different pickling liquids and define through-holes in their respective front and rear walls on at least one common longitudinal line to permit the successive passage of the tubular members therethrough while rotating them around their respective longitudinal axes. The apparatus includes a cleaning tank and cleaning brush unit provided sequentially before the liquid tanks. The cleaning tank includes at least one ultrasonic cleaning oscillator and defines through-holes in the front and rear walls thereof for allowing said tubular members to pass through the cleaning tank and the brush unit. Since any oil, grease or dust can be completely removed by the cleaning tank and brush unit prior to pickling, it is possible to obtain tubular members having excellent outer surface quality.
摘要翻译：描述了用于连续酸洗密封管状构件的外表面的装置。该装置包括多个液体罐，其分开地容纳不同的酸洗液体，并且在至少一个共同的纵向线上的相应的前壁和后壁中形成通孔，以允许管状构件连续通过，同时使它们围绕它们各自的纵向旋转轴。该装置包括在液罐之前依次提供的清洗槽和清洁刷单元。清洗槽包括至少一个超声波清洗振荡器，并在其前壁和后壁上形成通孔，以允许所述管状构件通过清洁槽和刷子单元。由于在酸洗之前可以通过清洗槽和刷子单元完全除去任何油，油脂或灰尘，所以可以获得具有优异的外表面质量的管状构件。

4. 发明授权

US4425062A Cutting and chamfering apparatus for opposing ends of tubular material 失效
标题翻译：用于管状材料相对端的切割和倒角装置
公开(公告)号：US4425062A
公开(公告)日：1984-01-10
申请号：US302124
申请日：1981-09-14
申请人： Teruaki Kawamura , Tadashi Nishimura , Kazuo Akagi , Ryujiro Shitamatsu
发明人： Teruaki Kawamura , Tadashi Nishimura , Kazuo Akagi , Ryujiro Shitamatsu
IPC分类号： B23B5/14 , B23B5/16 , B23D21/00 , B23B51/08 , B23B39/22 , B23G1/20 , B27C9/00
CPC分类号： B23D21/00 , B23B5/14 , B23B5/16 , Y10T29/5199 , Y10T408/355 , Y10T408/3792 , Y10T408/44 , Y10T408/50 , Y10T409/304088
摘要： A cutting and chamfering apparatus for opposite ends of a tubular member including a cutting and chamfering support for holding horizontally the member, two tables provided respectively at opposite ends of the support, and a cutting machine and chamfering machine mounted in combination on each of the tables.
摘要翻译：一种用于管状构件的相对端的切割和倒角装置，包括用于水平地保持构件的切割和倒角支撑件，分别设置在支撑件的相对端处的两个桌子以及组合安装在每个桌子上的切割机和倒角机。

5. 发明授权

US06351014B2 Semiconductor device having different field oxide sizes 有权
标题翻译：具有不同场氧化物尺寸的半导体器件
公开(公告)号：US06351014B2
公开(公告)日：2002-02-26
申请号：US09519598
申请日：2000-03-06
申请人： Yasuo Inoue , Tadashi Nishimura , Yasuo Yamaguchi , Toshiaki Iwamatsu
发明人： Yasuo Inoue , Tadashi Nishimura , Yasuo Yamaguchi , Toshiaki Iwamatsu
IPC分类号： H01L2701
CPC分类号： H01L21/8238 , H01L21/84 , H01L23/4825 , H01L27/0921 , H01L27/1203 , H01L29/78609 , H01L29/78612 , H01L29/78615 , H01L29/78621 , H01L29/78645 , H01L29/78654 , H01L2924/0002 , H01L2924/00
摘要： According to a semiconductor device of the present invention, a field oxide film is formed so as to cover the main surface of an SOI layer and to reach the main surface of a buried oxide film. As a result, a pMOS active region of the SOI and an nMOS active region of the SOI can be electrically isolated completely. Therefore, latchup can be prevented completely. As a result, it is possible to provide a semiconductor device using an SOI substrate which can implement high integration by eliminating reduction of the breakdown voltage between source and drain, which was a problem of a conventional SOI field effect transistor, as well as by efficiently disposing a body contact region, which hampers high integration, and a method of manufacturing the same.
摘要翻译：根据本发明的半导体器件，形成场致氧化膜以覆盖SOI层的主表面并到达掩埋氧化膜的主表面。结果，可以完全电隔离SOI的pMOS有源区和SOI的nMOS有源区。因此，可以完全防止闭锁。结果，可以提供使用SOI衬底的半导体器件，该SOI衬底可以通过消除源极和漏极之间的击穿电压的降低来实现高集成度，这是常规SOI场效应晶体管的问题，以及有效地设置妨碍高集成度的身体接触区域及其制造方法。

6. 发明授权

US06319805B1 Semiconductor device having metal silicide film and manufacturing method thereof 失效
标题翻译：具有金属硅化物膜的半导体器件及其制造方法
公开(公告)号：US06319805B1
公开(公告)日：2001-11-20
申请号：US09499733
申请日：2000-02-08
申请人： Toshiaki Iwamatsu , Yasuo Inoue , Yasuo Yamaguchi , Tadashi Nishimura
发明人： Toshiaki Iwamatsu , Yasuo Inoue , Yasuo Yamaguchi , Tadashi Nishimura
IPC分类号： H01L213205
CPC分类号： H01L21/26506 , H01L21/26586 , H01L21/84 , H01L27/1203 , H01L29/41783 , H01L29/458 , H01L29/66507 , H01L29/66659 , H01L29/66772 , H01L29/78621
摘要： A semiconductor device in which parasitic resistance of source/drain regions can be reduced than the parasitic resistance of the drain region, and manufacturing method thereof, can be obtained. In the semiconductor device, inactivating ions are implanted only to the source region of the semiconductor layer, so as to damage the crystal near the surface of the semiconductor layer, whereby siliciding reaction is promoted. Therefore, in the source region, a titanium silicide film which is thicker can be formed.
摘要翻译：可以获得其中源极/漏极区域的寄生电阻可以比漏极区域的寄生电阻降低的半导体器件及其制造方法。在半导体装置中，仅将钝化离子注入到半导体层的源极区域，以损坏半导体层的表面附近的晶体，从而促进了硅化反应。因此，在源极区域中，可以形成更厚的硅化钛膜。

7. 发明授权

US5619053A Semiconductor device having an SOI structure 失效
标题翻译：具有SOI结构的半导体器件
公开(公告)号：US5619053A
公开(公告)日：1997-04-08
申请号：US454816
申请日：1995-05-31
申请人： Toshiaki Iwamatsu , Yasuo Inoue , Tadashi Nishimura
发明人： Toshiaki Iwamatsu , Yasuo Inoue , Tadashi Nishimura
IPC分类号： H01L27/12 , H01L27/01
CPC分类号： H01L27/1203
摘要： Generation of parasitic transistor in active layer edge is prevented, in an NMOS region of a semiconductor layer (21) on an insulating film (20), boron ions are implanted by rotary oblique injection, using a nitride film (23) and a resist (253a) as mask. In the vicinity of a region for separating element by LOCOS method, that is, only in the edge region of the semiconductor layer (21) as the active layer of NMOS transistor, boron ions are implanted by about 3.times.10.sup.13 /cm.sup.2. After LOCOS oxidation, the impurity concentration is heightened to such a level as the boron ions may not be sucked up into the oxide film.
摘要翻译：在绝缘膜（20）上的半导体层（21）的NMOS区域中，通过旋转斜射注入硼离子，使用氮化物膜（23）和抗蚀剂（...）来防止在有源层边缘中产生寄生晶体管 253a）作为掩模。在通过LOCOS方法分离元件的区域附近，即仅在作为NMOS晶体管的有源层的半导体层（21）的边缘区域中，硼离子注入约3×10 13 / cm 2。在LOCOS氧化之后，杂质浓度提高到这样的水平，因为硼离子不能被吸入氧化膜中。

8. 发明授权

US5371381A Process for producing single crystal semiconductor layer and semiconductor device produced by said process 失效
标题翻译：通过所述方法制造单晶半导体层和半导体器件的制造方法
公开(公告)号：US5371381A
公开(公告)日：1994-12-06
申请号：US587500
申请日：1990-09-24
申请人： Kazuyuki Sugahara , Tadashi Nishimura , Shigeru Kusunoki , Yasuo Inoue
发明人： Kazuyuki Sugahara , Tadashi Nishimura , Shigeru Kusunoki , Yasuo Inoue
IPC分类号： H01L21/20 , H01L21/268 , H01L21/822 , H01L29/04 , H01L27/04
CPC分类号： H01L21/8221 , H01L21/2026 , H01L21/268 , H01L29/045 , Y10S117/904 , Y10S148/09 , Y10S148/091 , Y10S148/093
摘要： Disclosed herein is a process for producing a single crystal layer of a semiconductor device, which comprises the steps of providing an oxide insulator layer separated by an opening part for seeding, on a major surface of a single crystal semiconductor substrate of the cubic system, providing a polycrystalline or amorphous semiconductor layer on the entire surface of the insulator layer inclusive of the opening part, then providing a protective layer comprising at least a reflective or anti-reflection film comprising stripes of a predetermined width, in a predetermined direction relative to the opening part and at a predetermined interval, the protective layer capable of controlling the temperature distributions in the semiconductor layer at the parts corresponding to the stripes or the parts not corresponding to the stripes, thereby completing a base for producing a semiconductor device, thereafter the surface of the base is irradiated with an energy beam through the striped reflective or anti-reflection film to melt the polycrystalline or amorphous semiconductor and scanning the energy beam in a predetermined direction such that the direction of the crystal of the semiconductor re-solidified and converted into a single crystal accords with a {111} plane, to produce the single crystal of the semiconductor device. Also disclosed is a semiconductor device produced by the method, which comprises a single crystal layer having a wide range of a crystal in a predetermined direction relative to the facial orientation of the major surface of the substrate, and has a three-dimensional semiconductor circuit element construction.
摘要翻译：本发明公开了一种制造半导体器件的单晶层的方法，其包括以下步骤：在立方晶系的单晶半导体衬底的主表面上提供由用于接种的开口部分开的氧化物绝缘体层，提供在包括开口部分的绝缘体层的整个表面上的多晶或非晶半导体层，然后提供保护层，该保护层至少包括反射膜或防反射膜，该反射膜或防反射膜包含预定宽度的条，相对于开口部分并且以预定间隔，保护层能够控制对应于条纹的部分或不对应于条纹的部分的半导体层中的温度分布，从而完成用于制造半导体器件的基底，之后，通过条纹反射照射能量束 e或抗反射膜，以熔化多晶或非晶半导体并沿预定方向扫描能量束，使得半导体晶体的方向重新固化并转换成单晶符合{111}面，至产生半导体器件的单晶。还公开了一种通过该方法制造的半导体器件，该半导体器件包括相对于衬底的主表面的面取向在预定方向上具有宽范围的晶体的单晶层，并且具有三维半导体电路元件施工。

9. 发明授权

US5357365A Laser beam irradiating apparatus enabling uniform laser annealing 失效
标题翻译：激光束照射装置实现均匀的激光退火
公开(公告)号：US5357365A
公开(公告)日：1994-10-18
申请号：US62631
申请日：1993-05-18
申请人： Takashi Ipposhi , Tadashi Nishimura
发明人： Takashi Ipposhi , Tadashi Nishimura
IPC分类号： B01J19/12 , B23K26/06 , B23K26/08 , C30B1/08 , H01L21/268 , H01S3/101 , G02B26/08 , H01L21/477
CPC分类号： B23K26/08 , B23K26/06 , B23K26/064 , B23K26/0648 , B23K26/0665 , B23K26/082 , Y10S117/904 , Y10S359/90
摘要： A laser beam irradiating apparatus is capable of laser annealing with high precision and uniform over the entire surface of a sample. Luminous flux of the laser beam output from a laser source is expanded by a beam expander. The power of the laser beam which has passed through the beam expander is adjusted by a half-wave plate of synthetic quarts and a polarizing prism of synthetic quarts. The laser beam emitted from polarizing prism is guided to a prescribed position by mirrors, and swung in the direction of the X-axis by an X-axis rotation mirror. The laser beam reflected from X-axis rotation mirror has its diameter reduced by a f-.theta. lens to have a prescribed beam spot diameter on the surface of a silicon wafer, and laser beam scanning is carried out at a constant speed. Since half-wave plate and the polarizing prism are formed of synthetic quarts, thermal deformation of optical components caused by continuous irradiation of laser beam can be suppressed, beam profile of the laser beam can be stabilized, therefore highly uniform and highly precise laser annealing becomes possible.
摘要翻译：激光束照射装置能够在样品的整个表面上以高精度和均匀的激光退火。从激光源输出的激光束的光通量由光束扩展器扩展。已经通过扩束器的激光束的功率由合成夸脱的半波片和合成夸脱的偏振棱镜调节。从偏振棱镜发射的激光束被反射镜引导到规定位置，并通过X轴旋转镜在X轴的方向上摆动。从X轴旋转镜反射的激光束的直径通过f-θ透镜减小，以在硅晶片的表面上具有规定的光束点直径，并且以恒定的速度执行激光束扫描。由于半波片和偏光棱镜由合成石英形成，可以抑制由激光束的连续照射引起的光学部件的热变形，激光束的光束轮廓可以稳定，因此高度均匀且高精度的激光退火成为可能。

10. 发明授权

US4993835A Apparatus for detecting three-dimensional configuration of object employing optical cutting method 失效
标题翻译：使用光学切割方法检测物体的三维构型的装置
公开(公告)号：US4993835A
公开(公告)日：1991-02-19
申请号：US424979
申请日：1989-10-23
申请人： Yasuo Inoue , Tadashi Nishimura
发明人： Yasuo Inoue , Tadashi Nishimura
IPC分类号： G01B11/24 , G01B11/25
CPC分类号： G01B11/25
摘要： Disclosed is an apparatus for detecting the three-dimensional configuration of an object employing an optical cutting method. A light projector pulse-flashes slit-shaped light and causes the light to scan an object at a predetermined speed. An image sensor having a plurality of pixels is disposed in opposition to the object. An optical system forms on the image sensor an image of an optical cutting line formed on the surface of the object by the light. A difference detector detects the difference between the on- and off- levels of each of pulses of the image detected by the pixels of the sensor. A time calculator calculates the time at which the image has passed each of the pixels, on the basis of the difference detected by the difference detector. A configuration calculator calculates the three-dimensional configuration of the object on the basis of the calculated passage time and the scanning speed of the slit-shaped light. Since the difference between the levels of each pulse of the image is obtained, any optical signals resulting from a factor other than the pertinent pulses, such as influence by the background of the object, or a flash can be excluded, and the configuration can be detected with a high level of precision.
摘要翻译：公开了一种使用光学切割方法检测物体的三维构造的装置。光投射器脉冲闪烁狭缝状光，并使光以预定速度扫描物体。具有多个像素的图像传感器设置成与物体相对。光学系统在图像传感器上形成通过光形成在物体表面上的光学切割线的图像。差分检测器检测由传感器的像素检测的图像的每个脉冲的开和关电平之间的差异。时间计算器基于由差分检测器检测到的差异来计算图像已经通过每个像素的时间。配置计算器基于所计算的通过时间和狭缝状光的扫描速度来计算物体的三维配置。由于获得图像的每个脉冲的电平之间的差异，所以可以排除由诸如对象的背景或闪光的相关脉冲之外的因素产生的任何光信号，并且可以将配置以高精度检测。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式