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1. 发明授权

US5972862A Cleaning liquid for semiconductor devices 失效
标题翻译：半导体器件清洗液
公开(公告)号：US5972862A
公开(公告)日：1999-10-26
申请号：US901475
申请日：1997-07-28
申请人： Yoshimi Torii , Shunji Sasabe , Masayuki Kojima , Kazuhisa Usuami , Takafumi Tokunaga , Kazusato Hara , Yoshikazu Ohira , Tsuyoshi Matsui , Hideto Gotoh , Tetsuo Aoyama , Ryuji Hasemi , Hidetoshi Ikeda , Fukusaburo Ishihara , Ryuji Sotoaka
发明人： Yoshimi Torii , Shunji Sasabe , Masayuki Kojima , Kazuhisa Usuami , Takafumi Tokunaga , Kazusato Hara , Yoshikazu Ohira , Tsuyoshi Matsui , Hideto Gotoh , Tetsuo Aoyama , Ryuji Hasemi , Hidetoshi Ikeda , Fukusaburo Ishihara , Ryuji Sotoaka
IPC分类号： C11D7/60 , G03F7/42 , H01L21/02 , H01L21/302 , H01L21/304 , H01L21/3065 , H01L21/3213 , C11D1/62 , C11D3/44 , C11D7/08
CPC分类号： H01L21/02071 , G03F7/423 , G03F7/425 , H01L21/02063 , Y10S438/974
摘要： There is disclosed a cleaning liquid for producing a semiconductor device which comprises (A) fluorine-containing compound; (B) water-soluble or water-miscible organic solvent; and (C) inorganic acid and/or organic acid, optionally, further comprises (D) quaternary ammonium salt or (D') a specific organic carboxylic acid ammonium salt and/or an organic carboxylic acid amine salt; as well as a process for producing a semiconductor device by forming a resist pattern on a substrate equipped on the surface with an insulating film layer or a metallic electroconductive layer, forming a via hole or electric wiring by dry etching, removing the resist pattern by ashing treatment with oxygen plasma; and effecting an cleaning treatment with the above cleaning liquid. The above cleaning liquid and production process can readily remove the deposit polymer formed in the case of dry etching without impairing metallic film and insulating film.
摘要翻译：公开了一种用于制造半导体器件的清洗液，其包含（A）含氟化合物; （B）水溶性或水混溶性有机溶剂; 和（C）无机酸和/或有机酸，任选地还包含（D）季铵盐或（D'）特定的有机羧酸铵盐和/或有机羧酸胺盐; 以及通过在表面上配置有绝缘膜层或金属导电层的基板上形成抗蚀剂图案来制造半导体器件的方法，通过干蚀刻形成通孔或电布线，通过灰化除去抗蚀剂图案用氧等离子体处理; 并用上述清洗液进行清洗处理。上述清洗液和制造方法可以容易地除去在干蚀刻的情况下形成的沉积聚合物，而不损害金属膜和绝缘膜。

2. 发明授权

US06875288B2 Cleaning agent and cleaning method 失效
标题翻译：清洁剂和清洁方法
公开(公告)号：US06875288B2
公开(公告)日：2005-04-05
申请号：US09971589
申请日：2001-10-09
申请人： Hideto Gotoh , Takayuki Niuya , Hiroyuki Mori , Hiroshi Matsunaga , Fukusaburo Ishihara , Yoshiya Kimura , Ryuji Sotoaka , Takuya Goto , Tetsuo Aoyama , Kojiro Abe
发明人： Hideto Gotoh , Takayuki Niuya , Hiroyuki Mori , Hiroshi Matsunaga , Fukusaburo Ishihara , Yoshiya Kimura , Ryuji Sotoaka , Takuya Goto , Tetsuo Aoyama , Kojiro Abe
IPC分类号： B08B3/08 , B08B3/00 , C11D1/00 , C11D3/32 , C11D3/34 , C11D3/43 , C11D11/00 , C11D17/08 , H01L21/02 , H01L21/304 , H01L21/311 , H01L21/461
CPC分类号： B08B3/08 , B08B3/048 , C11D3/43 , C11D11/0064 , H01L21/02063 , H01L21/31133
摘要： The cleaning agent described above comprises a surfactant and an organic solvent, and the cleaning method described above is characterized by allowing the cleaning agent described above to flow on the surface of the material to be treated at a high speed to thereby clean the above surface. According to the present invention, deposits adhering firmly to a surface of a material to be treated can readily be removed without damaging the material to be treated.
摘要翻译：上述清洗剂包括表面活性剂和有机溶剂，上述清洗方法的特征在于允许上述清洗剂以高速流动在待处理材料的表面上，从而清洁上述表面。根据本发明，能够容易地除去附着在待处理材料的表面上的沉积物，而不损害被处理材料。

3. 发明授权

US06514352B2 Cleaning method using an oxidizing agent, chelating agent and fluorine compound 有权
标题翻译：使用氧化剂，螯合剂和氟化合物的清洗方法
公开(公告)号：US06514352B2
公开(公告)日：2003-02-04
申请号：US09971578
申请日：2001-10-09
申请人： Hideto Gotoh , Takayuki Niuya , Hiroyuki Mori , Hiroshi Matsunaga , Fukusaburo Ishihara , Yoshiya Kimura , Ryuji Sotoaka , Takuya Goto , Tetsuo Aoyama , Kojiro Abe
发明人： Hideto Gotoh , Takayuki Niuya , Hiroyuki Mori , Hiroshi Matsunaga , Fukusaburo Ishihara , Yoshiya Kimura , Ryuji Sotoaka , Takuya Goto , Tetsuo Aoyama , Kojiro Abe
IPC分类号： C23G102
CPC分类号： C11D7/36 , B08B3/102 , C03C23/0075 , C11D3/32 , C11D3/364 , C11D3/3947 , C11D3/43 , C11D7/30 , C11D7/3263 , C11D7/5013 , C11D11/0047 , H01L21/31116 , Y10S134/902
摘要： The cleaning method described above is characterized by allowing a cleaning agent comprising an oxidizing agent, a chelating agent and fluorine compound to flow on a surface of a material to be treated at a high speed to thereby clean the above surface according to the present invention, deposits adhering firmly to a surface of a material to be treated can readily be removed without damaging the material to be treated.
摘要翻译：上述清洗方法的特征在于，允许包含氧化剂，螯合剂和氟化合物的清洗剂在高速下在待处理材料的表面上流动，从而清洁根据本发明的上述表面，能够容易地除去附着在被处理材料的表面的沉积物，而不损害被处理材料。

4. 发明授权

US06265309B1 Cleaning agent for use in producing semiconductor devices and process for producing semiconductor devices using the same 有权
标题翻译：用于制造半导体器件的清洁剂和使用该半导体器件的半导体器件的制造方法
公开(公告)号：US06265309B1
公开(公告)日：2001-07-24
申请号：US09309076
申请日：1999-05-10
申请人： Hideto Gotoh , Tsuyoshi Matsui , Takayuki Niuya , Tetsuo Aoyama , Taketo Maruyama , Tetsuya Karita , Kojiro Abe , Fukusaburou Ishihara , Ryuji Sotoaka
发明人： Hideto Gotoh , Tsuyoshi Matsui , Takayuki Niuya , Tetsuo Aoyama , Taketo Maruyama , Tetsuya Karita , Kojiro Abe , Fukusaburou Ishihara , Ryuji Sotoaka
IPC分类号： H01L2102
CPC分类号： H01L21/02071 , C11D3/044 , C11D3/2006 , C11D3/2082 , C11D3/33 , C11D11/0047 , H01L21/02063 , H01L21/31138 , Y10S438/906
摘要： A cleaning agent for use in producing semiconductor devices. The cleaning agent is an aqueous solution containing (A) a fluorine-containing compound, (B) a salt of boric acid, (C) a water-soluble organic solvent, and optionally, (D) a specific quaternary ammonium salt or (D′) a specific ammonium salt of an organic carboxylic acid or a specific amine salt of an organic carboxylic acid. The polymeric deposit inside and around the via holes and on the side wall of the conductive line pattern formed during the dry etching process can be effectively removed by using the cleaning agent without affecting the dimensions of the via holes and the conductive line pattern.
摘要翻译：一种用于制造半导体器件的清洁剂。清洗剂是含有（A）含氟化合物，（B）硼酸盐，（C）水溶性有机溶剂和（D）特定季铵盐或（D） '）有机羧酸的特定铵盐或有机羧酸的特定胺盐。通过使用清洁剂可以有效地除去在干法蚀刻工艺期间形成的导电孔图案和导电线图案的侧壁上和周围的聚合物沉积物，而不影响通孔和导电线图案的尺寸。

5. 发明授权

US5962385A Cleaning liquid for semiconductor devices 有权
标题翻译：半导体器件清洗液
公开(公告)号：US5962385A
公开(公告)日：1999-10-05
申请号：US133627
申请日：1998-08-13
申请人： Taketo Maruyama , Ryuji Hasemi , Hidetoshi Ikeda , Tetsuo Aoyama
发明人： Taketo Maruyama , Ryuji Hasemi , Hidetoshi Ikeda , Tetsuo Aoyama
IPC分类号： G03F7/42 , H01L21/02 , H01L21/027 , H01L21/304 , H01L21/3213 , C09K13/00 , C11D7/50
CPC分类号： H01L21/02071
摘要： A cleaning liquid for semiconductor devices comprising 1.0 to 5% by weight of a fluorine compound of the formula R.sub.4 NF, wherein R is a hydrogen atom or a C.sub.1 -C.sub.4 alkyl group, 72 to 80% by weight of an organic solvent soluble in water, and the remaining amount being water. The cleaning liquid can rapidly and completely at a low temperature remove resist residues left remaining after dry etching and ashing in the wiring step in the production of semiconductor integrated circuits, and the cleaning liquid does not corrode wiring materials.
摘要翻译：一种半导体器件用清洗液，其含有1.0〜5重量％的式R4NF的氟化合物，其中R为氢原子或C1-C4烷基，72〜80重量％的可溶于水的有机溶剂，余量为水。在半导体集成电路的制造中，清洗液能够在低温下快速且完全地除去在干法蚀刻和布线步骤中残留残留的抗蚀剂残留物，并且清洗液体不会腐蚀布线材料。

6. 发明授权

US5911836A Method of producing semiconductor device and rinse for cleaning semiconductor device 失效
标题翻译：制造半导体器件的方法和冲洗用于清洁半导体器件
公开(公告)号：US5911836A
公开(公告)日：1999-06-15
申请号：US781774
申请日：1997-01-09
申请人： Mayumi Hada , Ryuji Hasemi , Hidetoshi Ikeda , Tetsuo Aoyama
发明人： Mayumi Hada , Ryuji Hasemi , Hidetoshi Ikeda , Tetsuo Aoyama
IPC分类号： G03F7/42 , H01L21/02 , H01L21/306 , H01L21/3213 , B08B3/08 , H01L21/44
CPC分类号： H01L21/02071 , G03F7/423 , Y10S438/906
摘要： A method of producing a semiconductor device, which includes applying a conductive metal film on a semiconductor wafer, applying a photoresist on the conductive metal film, removing the photoresist with a removing agent containing a fluorine compound or at least one basic component selected from the group consisting of a quaternary ammonium hydroxide, an alkanolamine and a mixture of an alkanolamine and a reducing agent, and cleaning the resultant semiconductor device by rinsing with a rinse comprising water and at least one peroxide compound. The method of the present invention can provide a highly accurate wiring circuit without corrosion of the conductive metal film.
摘要翻译：一种制造半导体器件的方法，其包括在半导体晶片上施加导电金属膜，在导电金属膜上施加光致抗蚀剂，用含有氟化合物的除去剂或至少一种选自下组的碱性成分除去光致抗蚀剂由季铵氢氧化物，链烷醇胺和链烷醇胺和还原剂的混合物组成，并且通过用包含水和至少一种过氧化物的漂洗液进行漂洗来清洗所得的半导体器件。本发明的方法可以提供高精度的布线电路，而不会导致金属膜的腐蚀。

7. 发明授权

US06462005B1 Cleaning agent for a semiconductor device and a method of manufacturing a semiconductor device 失效
标题翻译：半导体装置用清洗剂及半导体装置的制造方法
公开(公告)号：US06462005B1
公开(公告)日：2002-10-08
申请号：US08369215
申请日：1995-01-05
申请人： Hideto Gotoh , Tetsuo Aoyama , Rieko Nakano , Hideki Fukuda
发明人： Hideto Gotoh , Tetsuo Aoyama , Rieko Nakano , Hideki Fukuda
IPC分类号： C11D162
CPC分类号： H01L21/02071 , G03F7/425 , H01L21/02052
摘要： A cleaning agent for use in the manufacture of a semiconductor device comprising an aqueous solution containing a quarternary ammonium salt and a fluoro compound, or an aqueous solution containing a quarternary ammonium salt and a fluoro compound, as well as an organic solvent selected from the group consisting of amides, lactones, nitriles, alcohols and esters. In the semiconductor device manufacturing process, after forming a mask with a photoresist, a wiring structure is formed by dry etching of a conductive layer, wherein a protecting deposition film has been formed on side walls of the conductive layer. Use of the cleaning agent enables the protecting deposition film to be removed in a highly reliable manner with the surface of the conductive layer being decontaminated and cleaned such that no corrosion of the conductive layer occurs.
摘要翻译：一种用于制造半导体器件的清洁剂，其包含含有季铵盐和氟化合物的水溶液，或含有季铵盐和氟化合物的水溶液，以及选自下组的有机溶剂由酰胺，内酯，腈，醇和酯组成。在半导体器件制造方法中，在用光致抗蚀剂形成掩模之后，通过干蚀刻导电层形成布线结构，其中在导电层的侧壁上形成保护沉积膜。使用清洁剂能够以高度可靠的方式去除保护性沉积膜，同时导电层的表面被净化和清洁，使得不会发生导电层的腐蚀。

8. 发明申请

US20090099051A1 Aqueous fluoride compositions for cleaning semiconductor devices 审中-公开
标题翻译：氟化物组合物，用于清洁半导体器件
公开(公告)号：US20090099051A1
公开(公告)日：2009-04-16
申请号：US12173352
申请日：2008-07-15
申请人： Tetsuo Aoyama , Toshitaka Hiraga , Tomoko Suzuki
发明人： Tetsuo Aoyama , Toshitaka Hiraga , Tomoko Suzuki
IPC分类号： C11D7/32
CPC分类号： H01L21/02063 , C11D7/08 , C11D7/10 , C11D7/263 , C11D7/28 , C11D7/3218 , C11D7/3263 , C11D7/5013 , C11D11/0047 , G03F7/423 , G03F7/425 , H01L21/31116 , H01L21/31133 , H01L21/76802 , H01L21/76814
摘要： The present invention relates to dilute fluoride solutions and methods for cleaning plasma etch residue from semiconductor substrates including such dilute solutions. The compositions and methods according to the invention can advantageously provide both cleaning efficiency and material compatibility.
摘要翻译：本发明涉及稀释氟化物溶液以及用于从包括这种稀溶液的半导体衬底清洗等离子体蚀刻残留物的方法。根据本发明的组合物和方法可以有利地提供清洁效率和材料相容性。

9. 发明授权

US07341827B2 Separation-material composition for photo-resist and manufacturing method of semiconductor device 失效
标题翻译：用于光刻胶的分离材料组合物和半导体器件的制造方法
公开(公告)号：US07341827B2
公开(公告)日：2008-03-11
申请号：US10640389
申请日：2003-08-14
申请人： Masafumi Muramatsu , Hayato Iwamoto , Kazumi Asada , Tomoko Suzuki , Toshitaka Hiraga , Tetsuo Aoyama
发明人： Masafumi Muramatsu , Hayato Iwamoto , Kazumi Asada , Tomoko Suzuki , Toshitaka Hiraga , Tetsuo Aoyama
IPC分类号： G03F7/26
CPC分类号： H01L21/32136 , G03F7/423 , H01L21/02063 , H01L21/02071 , H01L21/31116 , H01L21/31133 , H01L21/76802 , H01L21/76808 , H01L21/76811 , H01L21/76814 , H01L21/76838
摘要： One example of a separation-material composition for a photo-resist according to the present invention comprises 5.0 weight % of sulfamic acid, 34.7 weight % of H2O, 0.3 weight % of ammonium 1-hydrogen difluoride, 30 weight % of N,N-dimethylacetamide and 30 weight % of diethylene glycol mono-n-buthyl ether. Another example of a separation-material composition for a photo-resist according to the present invention comprises 1-hydroxyethylidene-1, 3.0 weight % of 1-diphosphonic acid, 0.12 weight % of anmonium fluoride, 48.38 weight % of H2O and 48.5 weight % of diethylene glycol mono-n-buthl ether. The separation-material composition for the photo-resist is mainly used for a medicinal liquid washing liquid/scientific liquid in order to remove the photo-resist residuals and the by-product polymer after an ashing process of a photo-resist mask. It can propose a separation-material composition for a photo-resist such that the photo-resist residuals and the by-product polymer are easily removed after a dry etching process and at the same time the low dielectric-constant insulation film is avoided from erosion and oxidization.
摘要翻译：根据本发明的用于光刻胶的分离材料组合物的一个实例包括5.0重量％的氨基磺酸，34.7重量％的H 2 O 3，0.3重量％的1位氢氟酸铵，30重量％的N，N-二甲基乙酰胺和30重量％的二甘醇单正丁醚。根据本发明的用于光致抗蚀剂的分离材料组合物的另一个实例包括1-羟基亚乙基-1.3.0重量％的1-二膦酸，0.12重量％的氟化铵，48.38重量％的H 2 O和48.5重量％的二甘醇单正丁基醚。用于光刻胶的分离材料组合物主要用于医用液体洗涤液/科学液体，以便在光刻胶掩模的灰化过程之后除去光致抗蚀剂残留物和副产物聚合物。可以提出用于光刻胶的分离材料组合物，使得光刻胶残留物和副产物聚合物在干蚀刻工艺之后容易除去，同时避免了低介电常数绝缘膜侵蚀和氧化。

10. 发明授权

US06458517B2 Photoresist stripping composition and process for stripping photoresist 失效
标题翻译：光刻胶剥离组合物和剥离光刻胶的方法
公开(公告)号：US06458517B2
公开(公告)日：2002-10-01
申请号：US09536643
申请日：2000-03-28
申请人： Masahiro Nohara , Yukihiko Takeuchi , Hisaki Abe , Taketo Maruyama , Tetsuo Aoyama
发明人： Masahiro Nohara , Yukihiko Takeuchi , Hisaki Abe , Taketo Maruyama , Tetsuo Aoyama
IPC分类号： G03F742
CPC分类号： G03F7/425
摘要： A photoresist stripping composition comprises (1) a nitrogen-containing organohydroxyl compound, (2) an alkylene glycol monoalkyl ether represented by the general formula: HO—(CpH2pO)q—R, wherein R is C1-C4 alkyl, p is 2 or 3, and q is 1, 2 or 3, (3) sugar or sugar alcohol, (4) a phosphorus-containing compound and (5) water. The photoresist stripping composition easily removes photoresist films on the inorganic substrate, and patterned photoresist films and photoresist residues remaining after etching and photoresist residues in a short period of time without corroding semiconductive materials, circuit-forming materials, insulating materials, etc.
摘要翻译：光致抗蚀剂剥离组合物包含（1）含氮有机羟基化合物，（2）由通式HO-（CpH2pO）qR表示的亚烷基二醇单烷基醚，其中R是C 1 -C 4烷基，p是2或3，和q为1,2或3，（3）糖或糖醇，（4）含磷化合物和（5）水。光致抗蚀剂剥离组合物容易地除去无机基材上的光致抗蚀剂膜，蚀刻后剩余的图案化光致抗蚀剂膜和光致抗蚀剂残留物在短时间内不腐蚀半导体材料，电路形成材料，绝缘材料等。

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