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    • 4. 发明授权
    • Large-capacity magnetic memory using carbon nano-tube
    • 使用碳纳米管的大容量磁记忆体
    • US07379326B2
    • 2008-05-27
    • US10516009
    • 2003-05-01
    • Takashi UshidaNobuyuki MoriYoshimi KamijoAkihiro OkazakiAkira MitsuzukaRikizou HatakeyamaHideaki IdoKo NakajimaTakehiro Takoshima
    • Takashi UshidaNobuyuki MoriYoshimi KamijoAkihiro OkazakiAkira MitsuzukaRikizou HatakeyamaHideaki IdoKo NakajimaTakehiro Takoshima
    • G11C11/00
    • G11C11/16B82Y10/00G11C13/025G11C2213/81H01L27/222H01L51/0048H01L51/0052Y10S977/724Y10S977/865
    • A high-capacity magnetic memory capable of writing and reading a magnetic record in/from a magnetic recording film according to a perpendicular magnetic recording system at a high speed in a purely-electrically random access manner. In the magnetic memory, a writing-magnetic-field generating means 62 and a writing word line 43 are disposed relative to a perpendicular magnetic recording film 50, and a reading/writing bit-line conductor 41, a magnetoresistive-effect element 20 and a reading word lead conductor 42 are laminated in order on a probe substrate opposed to the perpendicular magnetic recording film 50. A magnetic probe 30 composed of a carbon nanotube containing a soft magnetic material is disposed relative to the magnetoresistive-effect element 20 in a standing manner, and electrically connected to the reading/writing bit-line conductor. During a writing operation, a micro-discharge is generated in a micro-gap G between the edge of the magnetic probe and the magnetic recording film under a writing magnetic field to allow a writing current to flow through the micro-gap G so as to heat a micro-region of the magnetic recording film in such a manner that it goes through its Curie point to thereby become magnetized in the direction of the recording magnetic field to form a magnetic record therein. During a reading operation, the magnetic record is read out through the magnetic probe in accordance with a current variation in the magnetoresistive-effect element.
    • 一种高容量磁记录器,其能够以纯电动随机存取方式以高速度根据垂直磁记录系统向磁记录膜写入磁记录。 在磁存储器中,写入磁场产生装置62和写入字线43相对于垂直磁记录膜50设置,并且读/写位线导体41,磁阻效应元件20和 读取字引线导体42依次层叠在与垂直磁记录膜50相对的探针基板上。 由含有软磁性材料的碳纳米管构成的磁性探头30相对于磁阻效应元件20以静止方式设置,并与读/写位线导体电连接。 在写入操作期间,在写入磁场下在磁探针的边缘和磁记录膜之间的微间隙G中产生微放电,以允许写入电流流过微间隙G,从而 加热磁记录膜的微区,使其通过其居里点,从而在记录磁场的方向上磁化,从而在其中形成磁记录。 在读取操作期间,磁记录根据磁阻效应元件的电流变化通过磁探头读出。
    • 5. 发明申请
    • Large-capacity magnetic memory using carbon nano-tube
    • 使用碳纳米管的大容量磁记忆体
    • US20060092542A1
    • 2006-05-04
    • US10516009
    • 2003-05-01
    • Takashi UshidaNobuyuki MoriYoshimi KamijoAkihiro OkazakiAkira MitsuzukaRikizou HatakeyamaHideaki IdoKo NakajimaTakehiro Takoshima
    • Takashi UshidaNobuyuki MoriYoshimi KamijoAkihiro OkazakiAkira MitsuzukaRikizou HatakeyamaHideaki IdoKo NakajimaTakehiro Takoshima
    • G11B5/02
    • G11C11/16B82Y10/00G11C13/025G11C2213/81H01L27/222H01L51/0048H01L51/0052Y10S977/724Y10S977/865
    • Disclosed is a high-capacity magnetic memory capable of writing and reading a magnetic record in/from a magnetic recording film according to a perpendicular magnetic recording system at a high speed in a purely-electrically random access manner. In the magnetic memory, a writing-magnetic-field generating means 62 and a writing word line 43 are disposed relative to a perpendicular magnetic recording film 50, and a reading/writing bit-line conductor 41, a magnetoresistive-effect element 20 and a reading word lead conductor 42 are laminated in order on a probe substrate opposed to the perpendicular magnetic recording film 50. A magnetic probe 30 composed of a carbon nanotube containing a soft magnetic material is disposed relative to the magnetoresistive-effect element 20 in a standing manner, and electrically connected to the reading/writing bit-line conductor. During a writing operation, a micro-discharge is generated in a micro-gap G between the edge of the magnetic probe and the magnetic recording film under a writing magnetic field to allow a writing current to flow through the micro-gap G so as to heat a micro-region of the magnetic recording film in such a manner that it goes through its Curie point to thereby become magnetized in the direction of the recording magnetic field to form a magnetic record therein. During a reading operation, the magnetic record is read out through the magnetic probe in accordance with a current variation in the magnetoresistive-effect element.
    • 公开了一种高容量磁存储器,其能够以纯电动随机存取方式以高速度根据垂直磁记录系统向/从磁记录膜读取磁记录。 在磁存储器中,写入磁场产生装置62和写入字线43相对于垂直磁记录膜50设置,并且读/写位线导体41,磁阻效应元件20和 读取字引线导体42依次层叠在与垂直磁记录膜50相对的探针基板上。 由含有软磁性材料的碳纳米管构成的磁性探头30相对于磁阻效应元件20以静止方式设置,并与读/写位线导体电连接。 在写入操作期间,在写入磁场下在磁探针的边缘和磁记录膜之间的微间隙G中产生微放电,以允许写入电流流过微间隙G,从而 加热磁记录膜的微区,使其通过其居里点,从而在记录磁场的方向上磁化,从而在其中形成磁记录。 在读取操作期间,磁记录根据磁阻效应元件的电流变化通过磁探头读出。
    • 10. 发明授权
    • Multi-circuit switch
    • 多路开关
    • US4122317A
    • 1978-10-24
    • US786981
    • 1977-04-13
    • Shoji ShimamuneYoshimi Kamijo
    • Shoji ShimamuneYoshimi Kamijo
    • H01H15/04H01H11/00H01H15/00H01H15/02
    • H01H15/005H01H11/0056
    • A multi-circuit switch is described which comprises a housing divided into a desired number of chambers, a base member fixed to one end of the housing, sliders disposed in respective chambers for sliding movement, stationary contact elements disposed in spaced relation on the base member and contained in the respective chambers, and movable contact elements attached to the respective sliders for engaging and dis-engaging each pair of the stationary contact elements as the corresponding slider is moved. The movable contact elements each have contact portions bifurcated in a clip shape for holding therebetween one or both of the stationary contact elements.
    • 描述了一种多回路开关,其包括被分成期望数量的腔室的壳体,固定到壳体的一端的基座构件,设置在各个腔室中用于滑动运动的滑块,以间隔设置在基座构件上的固定接触元件 并且容纳在各个室中,以及可移动的接触元件,其连接到相应的滑块,用于在相应的滑块移动时接合和解除接合每对固定接触元件。 可移动接触元件各自具有以夹子形状分叉的接触部分,用于保持其中的一个或两个固定接触元件。