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1. 发明授权

US07379326B2 Large-capacity magnetic memory using carbon nano-tube 失效
标题翻译：使用碳纳米管的大容量磁记忆体
公开(公告)号：US07379326B2
公开(公告)日：2008-05-27
申请号：US10516009
申请日：2003-05-01
申请人： Takashi Ushida , Nobuyuki Mori , Yoshimi Kamijo , Akihiro Okazaki , Akira Mitsuzuka , Rikizou Hatakeyama , Hideaki Ido , Ko Nakajima , Takehiro Takoshima
发明人： Takashi Ushida , Nobuyuki Mori , Yoshimi Kamijo , Akihiro Okazaki , Akira Mitsuzuka , Rikizou Hatakeyama , Hideaki Ido , Ko Nakajima , Takehiro Takoshima
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , B82Y10/00 , G11C13/025 , G11C2213/81 , H01L27/222 , H01L51/0048 , H01L51/0052 , Y10S977/724 , Y10S977/865
摘要： A high-capacity magnetic memory capable of writing and reading a magnetic record in/from a magnetic recording film according to a perpendicular magnetic recording system at a high speed in a purely-electrically random access manner. In the magnetic memory, a writing-magnetic-field generating means 62 and a writing word line 43 are disposed relative to a perpendicular magnetic recording film 50, and a reading/writing bit-line conductor 41, a magnetoresistive-effect element 20 and a reading word lead conductor 42 are laminated in order on a probe substrate opposed to the perpendicular magnetic recording film 50. A magnetic probe 30 composed of a carbon nanotube containing a soft magnetic material is disposed relative to the magnetoresistive-effect element 20 in a standing manner, and electrically connected to the reading/writing bit-line conductor. During a writing operation, a micro-discharge is generated in a micro-gap G between the edge of the magnetic probe and the magnetic recording film under a writing magnetic field to allow a writing current to flow through the micro-gap G so as to heat a micro-region of the magnetic recording film in such a manner that it goes through its Curie point to thereby become magnetized in the direction of the recording magnetic field to form a magnetic record therein. During a reading operation, the magnetic record is read out through the magnetic probe in accordance with a current variation in the magnetoresistive-effect element.
摘要翻译：一种高容量磁记录器，其能够以纯电动随机存取方式以高速度根据垂直磁记录系统向磁记录膜写入磁记录。在磁存储器中，写入磁场产生装置62和写入字线43相对于垂直磁记录膜50设置，并且读/写位线导体41，磁阻效应元件20和读取字引线导体42依次层叠在与垂直磁记录膜50相对的探针基板上。由含有软磁性材料的碳纳米管构成的磁性探头30相对于磁阻效应元件20以静止方式设置，并与读/写位线导体电连接。在写入操作期间，在写入磁场下在磁探针的边缘和磁记录膜之间的微间隙G中产生微放电，以允许写入电流流过微间隙G，从而加热磁记录膜的微区，使其通过其居里点，从而在记录磁场的方向上磁化，从而在其中形成磁记录。在读取操作期间，磁记录根据磁阻效应元件的电流变化通过磁探头读出。

2. 发明申请

US20060092542A1 Large-capacity magnetic memory using carbon nano-tube 失效
标题翻译：使用碳纳米管的大容量磁记忆体
公开(公告)号：US20060092542A1
公开(公告)日：2006-05-04
申请号：US10516009
申请日：2003-05-01
申请人： Takashi Ushida , Nobuyuki Mori , Yoshimi Kamijo , Akihiro Okazaki , Akira Mitsuzuka , Rikizou Hatakeyama , Hideaki Ido , Ko Nakajima , Takehiro Takoshima
发明人： Takashi Ushida , Nobuyuki Mori , Yoshimi Kamijo , Akihiro Okazaki , Akira Mitsuzuka , Rikizou Hatakeyama , Hideaki Ido , Ko Nakajima , Takehiro Takoshima
IPC分类号： G11B5/02
CPC分类号： G11C11/16 , B82Y10/00 , G11C13/025 , G11C2213/81 , H01L27/222 , H01L51/0048 , H01L51/0052 , Y10S977/724 , Y10S977/865
摘要： Disclosed is a high-capacity magnetic memory capable of writing and reading a magnetic record in/from a magnetic recording film according to a perpendicular magnetic recording system at a high speed in a purely-electrically random access manner. In the magnetic memory, a writing-magnetic-field generating means 62 and a writing word line 43 are disposed relative to a perpendicular magnetic recording film 50, and a reading/writing bit-line conductor 41, a magnetoresistive-effect element 20 and a reading word lead conductor 42 are laminated in order on a probe substrate opposed to the perpendicular magnetic recording film 50. A magnetic probe 30 composed of a carbon nanotube containing a soft magnetic material is disposed relative to the magnetoresistive-effect element 20 in a standing manner, and electrically connected to the reading/writing bit-line conductor. During a writing operation, a micro-discharge is generated in a micro-gap G between the edge of the magnetic probe and the magnetic recording film under a writing magnetic field to allow a writing current to flow through the micro-gap G so as to heat a micro-region of the magnetic recording film in such a manner that it goes through its Curie point to thereby become magnetized in the direction of the recording magnetic field to form a magnetic record therein. During a reading operation, the magnetic record is read out through the magnetic probe in accordance with a current variation in the magnetoresistive-effect element.
摘要翻译：公开了一种高容量磁存储器，其能够以纯电动随机存取方式以高速度根据垂直磁记录系统向/从磁记录膜读取磁记录。在磁存储器中，写入磁场产生装置62和写入字线43相对于垂直磁记录膜50设置，并且读/写位线导体41，磁阻效应元件20和读取字引线导体42依次层叠在与垂直磁记录膜50相对的探针基板上。由含有软磁性材料的碳纳米管构成的磁性探头30相对于磁阻效应元件20以静止方式设置，并与读/写位线导体电连接。在写入操作期间，在写入磁场下在磁探针的边缘和磁记录膜之间的微间隙G中产生微放电，以允许写入电流流过微间隙G，从而加热磁记录膜的微区，使其通过其居里点，从而在记录磁场的方向上磁化，从而在其中形成磁记录。在读取操作期间，磁记录根据磁阻效应元件的电流变化通过磁探头读出。

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