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    • 1. 发明申请
    • METHOD AND SYSTEM FOR PURIFYING SILICON
    • 用于净化硅的方法和系统
    • US20120097523A1
    • 2012-04-26
    • US13266631
    • 2010-04-27
    • Nobuyuki MoriHiroshi YanoToshiyuki ShiroishiTakashi UshidaNobuhiro ShimizuNoriyuki TakahashiToshihiro Mitsuzuka
    • Nobuyuki MoriHiroshi YanoToshiyuki ShiroishiTakashi UshidaNobuhiro ShimizuNoriyuki TakahashiToshihiro Mitsuzuka
    • C01B33/037B01J19/08
    • C01B33/037
    • [Objects] To improve productivity and reduce thermal energy consumption in manufacturing of high purity silicon as a raw material for metallurgical grade pure silicon.[Means to Solve]After conducting a first treatment of either removing boron by water-vapor added plasma arc heating or low-pressure oxygen plasma arc heating upon raw silicon contained in a hearth in a chamber to thereby putting the raw silicon into a high temperature molten state to thereby oxidizing and removing boron by evaporation, or removing phosphorus by electron beam irradiation to thereby putting the raw silicon into a high temperature molten state to thereby remove phosphorus by evaporation in an atmosphere suitable to the treatment; the atmosphere of the chamber is then changed to a vacuum atmosphere suitable to the remaining second treatment, while maintaining the silicon contained in the hearth in its molten state, and the second purification treatment is conducted; whereafter end(s) enriched in impurities is cut off by way of one-way coagulation method to obtain a high purity refined silicon ingot highly free from phosphorus, boron and other impurities.
    • [对象]提高生产率,降低冶金级纯硅原料的高纯度硅制造中的热能消耗。 [解决方法]在室内的原料硅中,通过水蒸汽添加等离子体电弧加热或低压氧等离子体电弧加热进行第一次处理之后,将原料硅置于高温 从而通过蒸发氧化和除去硼,或通过电子束照射除去磷,从而将原料硅置于高温熔融状态,从而通过在适于处理的气氛中蒸发除去磷; 然后将室的气氛变成适合于剩余的第二处理的真空气氛,同时将包含在炉床中的硅保持在其熔融状态,并且进行第二净化处理; 然后通过单向凝结法切断富集杂质的末端,得到高度无磷,硼等杂质的高纯度精制硅锭。
    • 4. 发明授权
    • Large-capacity magnetic memory using carbon nano-tube
    • 使用碳纳米管的大容量磁记忆体
    • US07379326B2
    • 2008-05-27
    • US10516009
    • 2003-05-01
    • Takashi UshidaNobuyuki MoriYoshimi KamijoAkihiro OkazakiAkira MitsuzukaRikizou HatakeyamaHideaki IdoKo NakajimaTakehiro Takoshima
    • Takashi UshidaNobuyuki MoriYoshimi KamijoAkihiro OkazakiAkira MitsuzukaRikizou HatakeyamaHideaki IdoKo NakajimaTakehiro Takoshima
    • G11C11/00
    • G11C11/16B82Y10/00G11C13/025G11C2213/81H01L27/222H01L51/0048H01L51/0052Y10S977/724Y10S977/865
    • A high-capacity magnetic memory capable of writing and reading a magnetic record in/from a magnetic recording film according to a perpendicular magnetic recording system at a high speed in a purely-electrically random access manner. In the magnetic memory, a writing-magnetic-field generating means 62 and a writing word line 43 are disposed relative to a perpendicular magnetic recording film 50, and a reading/writing bit-line conductor 41, a magnetoresistive-effect element 20 and a reading word lead conductor 42 are laminated in order on a probe substrate opposed to the perpendicular magnetic recording film 50. A magnetic probe 30 composed of a carbon nanotube containing a soft magnetic material is disposed relative to the magnetoresistive-effect element 20 in a standing manner, and electrically connected to the reading/writing bit-line conductor. During a writing operation, a micro-discharge is generated in a micro-gap G between the edge of the magnetic probe and the magnetic recording film under a writing magnetic field to allow a writing current to flow through the micro-gap G so as to heat a micro-region of the magnetic recording film in such a manner that it goes through its Curie point to thereby become magnetized in the direction of the recording magnetic field to form a magnetic record therein. During a reading operation, the magnetic record is read out through the magnetic probe in accordance with a current variation in the magnetoresistive-effect element.
    • 一种高容量磁记录器,其能够以纯电动随机存取方式以高速度根据垂直磁记录系统向磁记录膜写入磁记录。 在磁存储器中,写入磁场产生装置62和写入字线43相对于垂直磁记录膜50设置,并且读/写位线导体41,磁阻效应元件20和 读取字引线导体42依次层叠在与垂直磁记录膜50相对的探针基板上。 由含有软磁性材料的碳纳米管构成的磁性探头30相对于磁阻效应元件20以静止方式设置,并与读/写位线导体电连接。 在写入操作期间,在写入磁场下在磁探针的边缘和磁记录膜之间的微间隙G中产生微放电,以允许写入电流流过微间隙G,从而 加热磁记录膜的微区,使其通过其居里点,从而在记录磁场的方向上磁化,从而在其中形成磁记录。 在读取操作期间,磁记录根据磁阻效应元件的电流变化通过磁探头读出。
    • 6. 发明申请
    • Large-capacity magnetic memory using carbon nano-tube
    • 使用碳纳米管的大容量磁记忆体
    • US20060092542A1
    • 2006-05-04
    • US10516009
    • 2003-05-01
    • Takashi UshidaNobuyuki MoriYoshimi KamijoAkihiro OkazakiAkira MitsuzukaRikizou HatakeyamaHideaki IdoKo NakajimaTakehiro Takoshima
    • Takashi UshidaNobuyuki MoriYoshimi KamijoAkihiro OkazakiAkira MitsuzukaRikizou HatakeyamaHideaki IdoKo NakajimaTakehiro Takoshima
    • G11B5/02
    • G11C11/16B82Y10/00G11C13/025G11C2213/81H01L27/222H01L51/0048H01L51/0052Y10S977/724Y10S977/865
    • Disclosed is a high-capacity magnetic memory capable of writing and reading a magnetic record in/from a magnetic recording film according to a perpendicular magnetic recording system at a high speed in a purely-electrically random access manner. In the magnetic memory, a writing-magnetic-field generating means 62 and a writing word line 43 are disposed relative to a perpendicular magnetic recording film 50, and a reading/writing bit-line conductor 41, a magnetoresistive-effect element 20 and a reading word lead conductor 42 are laminated in order on a probe substrate opposed to the perpendicular magnetic recording film 50. A magnetic probe 30 composed of a carbon nanotube containing a soft magnetic material is disposed relative to the magnetoresistive-effect element 20 in a standing manner, and electrically connected to the reading/writing bit-line conductor. During a writing operation, a micro-discharge is generated in a micro-gap G between the edge of the magnetic probe and the magnetic recording film under a writing magnetic field to allow a writing current to flow through the micro-gap G so as to heat a micro-region of the magnetic recording film in such a manner that it goes through its Curie point to thereby become magnetized in the direction of the recording magnetic field to form a magnetic record therein. During a reading operation, the magnetic record is read out through the magnetic probe in accordance with a current variation in the magnetoresistive-effect element.
    • 公开了一种高容量磁存储器,其能够以纯电动随机存取方式以高速度根据垂直磁记录系统向/从磁记录膜读取磁记录。 在磁存储器中,写入磁场产生装置62和写入字线43相对于垂直磁记录膜50设置,并且读/写位线导体41,磁阻效应元件20和 读取字引线导体42依次层叠在与垂直磁记录膜50相对的探针基板上。 由含有软磁性材料的碳纳米管构成的磁性探头30相对于磁阻效应元件20以静止方式设置,并与读/写位线导体电连接。 在写入操作期间,在写入磁场下在磁探针的边缘和磁记录膜之间的微间隙G中产生微放电,以允许写入电流流过微间隙G,从而 加热磁记录膜的微区,使其通过其居里点,从而在记录磁场的方向上磁化,从而在其中形成磁记录。 在读取操作期间,磁记录根据磁阻效应元件的电流变化通过磁探头读出。