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1. 发明授权

US5872366A Charged-particle-beam exposure device and charged-particle-beam exposure method 失效
标题翻译：带电粒子束曝光装置和带电粒子束曝光方法
公开(公告)号：US5872366A
公开(公告)日：1999-02-16
申请号：US908699
申请日：1997-08-08
申请人： Yoshihisa Ooaeh , Tomohiko Abe , Akio Yamada , Hiroshi Yasuda , Kenj Kudoh , Kouzi Takahata
发明人： Yoshihisa Ooaeh , Tomohiko Abe , Akio Yamada , Hiroshi Yasuda , Kenj Kudoh , Kouzi Takahata
IPC分类号： H01J37/07 , H01J37/065 , H01J37/24 , H01J37/30 , H01J37/09
CPC分类号： H01J37/241 , H01J37/065 , H01J2237/3175
摘要： An electron gun for emitting an electron beam traveling along a beam axis includes a cathode having a tip, the tip having substantially a circular conic shape and a tip surface substantially at the beam axis, the cathode being applied with a first voltage, an anode having a first aperture substantially on the beam axis and being applied with a second voltage higher than the first voltage, a control electrode having a second aperture substantially on the beam axis and being applied with a voltage lower than the first voltage to control a current of the cathode, the second aperture being larger than the tip surface, a guide electrode having a third aperture substantially on the beam axis, being arranged between the cathode and the anode, and being applied with a voltage higher than the first voltage and lower than the second voltage, the third aperture being smaller than the tip surface, and a lens electrode having a fourth aperture substantially on the beam axis, being arranged between the guide electrode and the anode, and being applied with a voltage lower than the first voltage to form a cross-over image of the electron beam, the fourth aperture being larger than the third aperture.
摘要翻译：用于发射沿着光束轴线行进的电子束的电子枪包括具有尖端的阴极，该尖端具有基本上圆形的圆锥形形状和基本上在光束轴线处的尖端表面，阴极被施加第一电压，阳极具有基本上在所述光束轴上的第一孔，并施加高于所述第一电压的第二电压;控制电极，其具有基本上在所述光束轴上的第二孔，并施加低于所述第一电压的电压以控制所述第一电压的电流阴极，第二孔径大于尖端表面，具有基本上在梁轴上的第三孔的引导电极设置在阴极和阳极之间，并施加有比第一电压高的电压并且低于第二电压电压，所述第三孔小于所述尖端表面，以及透镜电极，所述透镜电极具有基本上在所述光束轴上的第四孔引导电极和阳极，并施加低于第一电压的电压以形成电子束的交叉图像，第四孔径大于第三孔径。

2. 发明授权

US5854490A Charged-particle-beam exposure device and charged-particle-beam exposure method 失效
公开(公告)号：US5854490A
公开(公告)日：1998-12-29
申请号：US680960
申请日：1996-07-16
申请人： Yoshihisa Ooaeh , Akio Yamada , Hiroshi Yasuda
发明人： Yoshihisa Ooaeh , Akio Yamada , Hiroshi Yasuda
IPC分类号： H01J37/07 , H01J37/065 , H01J37/24 , H01J37/30 , H01J37/63
CPC分类号： H01J37/241 , H01J37/065 , H01J2237/3175
摘要： An electron gun for emitting an electron beam traveling along a beam axis includes a cathode having a tip, the tip having substantially a circular conic shape and a tip surface substantially at the beam axis, the cathode being applied with a first voltage, an anode having a first aperture substantially on the beam axis and being applied with a second voltage higher than the first voltage, a control electrode having a second aperture substantially on the beam axis and being applied with a voltage lower than the first voltage to control a current of the cathode, the second aperture being larger than the tip surface, a guide electrode having a third aperture substantially on the beam axis, being arranged between the cathode and the anode, and being applied with a voltage higher than the first voltage and lower than the second voltage, the third aperture being smaller than the tip surface, and a lens electrode having a fourth aperture substantially on the beam axis, being arranged between the guide electrode and the anode, and being applied with a voltage lower than the first voltage to form a cross-over image of the electron beam, the fourth aperture being larger than the third aperture.

3. 发明授权

US5981960A Charged particle beam exposure method and apparatus therefor 失效
标题翻译：带电粒子束曝光方法及其装置
公开(公告)号：US5981960A
公开(公告)日：1999-11-09
申请号：US724954
申请日：1996-10-02
申请人： Yoshihisa Ooaeh , Akio Yamada , Hiroshi Yasuda , Hitoshi Tanaka
发明人： Yoshihisa Ooaeh , Akio Yamada , Hiroshi Yasuda , Hitoshi Tanaka
IPC分类号： H01J37/06 , H01J37/30 , H01J37/305 , H01J37/317 , H01L21/027
CPC分类号： B82Y10/00 , B82Y40/00 , G03F7/70925 , H01J37/3002 , H01J37/3174 , H01J2237/022 , H01J2237/188 , H01J2237/31776
摘要： A charged particle beam exposure method and apparatus, in which a charged particle beam is shaped based on pattern data and the shaped charged particle beam is irradiated to a desired location on a sample. The method and apparatus includes introducing ozone gas into a chamber through which the charged particle beam is passed, shaped and deflected, to be irradiated to the desired location while the charged particle beam is irradiated through the chamber. The ozone gas concentration in the chamber is maintained so that the concentration downstream along the beam is higher than the concentration upstream along the beam. A charge-up drift due to a contamination material from a resist on a wafer can be avoided by the ozone self cleaning. The ozone oxidation does not occur at the upstream chamber where there is a lower ozone concentration and lower contamination.
摘要翻译：带电粒子束曝光方法和装置，其中基于图案数据对带电粒子束进行成形，并将成形的带电粒子束照射到样品上的期望位置。所述方法和装置包括将臭氧气体引入室中，带电粒子束通过该腔通过，成形和偏转，以照射到期望位置，同时通过室照射带电粒子束。保持室中的臭氧气体浓度，使得沿着光束的下游的浓度高于沿着光束的上游的浓度。通过臭氧自清洁可以避免由于晶片上的抗蚀剂引起的污染物质的充电漂移。臭氧氧化不会发生在臭氧浓度较低和污染较低的上游室。

4. 发明授权

US5949078A Charged-particle-beam exposure device and charged-particle-beam exposure method 有权
标题翻译：带电粒子束曝光装置和带电粒子束曝光方法
公开(公告)号：US5949078A
公开(公告)日：1999-09-07
申请号：US131368
申请日：1998-08-07
申请人： Yoshihisa Ooaeh , Tomohiko Abe , Akio Yamada , Hiroshi Yasuda , Kenj Kudoh , Kouzi Takahata
发明人： Yoshihisa Ooaeh , Tomohiko Abe , Akio Yamada , Hiroshi Yasuda , Kenj Kudoh , Kouzi Takahata
IPC分类号： H01J37/07 , H01J37/065 , H01J37/24 , H01J37/30
CPC分类号： H01J37/241 , H01J37/065 , H01J2237/3175
摘要： An electron gun for emitting an electron beam traveling along a beam axis includes a cathode having a tip, the tip having substantially a circular conic shape and a tip surface substantially at the beam axis, the cathode being applied with a first voltage, an anode having a first aperture substantially on the beam axis and being applied with a second voltage higher than the first voltage, a control electrode having a second aperture substantially on the beam axis and being applied with a voltage lower that the first voltage to control a current of the cathode, the second aperture being larger than the tip surface, a guide electrode having a third aperture substantially on the beam axis, being arranged between the cathode and the anode, and being applied with a voltage higher than the first voltage and lower than the second voltage, the third aperture being smaller than the tip surface, and a lens electrode having a fourth aperture substantially on the beam axis, being arranged between the guide electrode and the anode, and being applied with a voltage lower than the first voltage to form a cross-over image of the electron beam, the fourth aperture being larger than the third aperture.
摘要翻译：用于发射沿着光束轴线行进的电子束的电子枪包括具有尖端的阴极，该尖端具有基本上圆形的圆锥形形状和基本上在光束轴线处的尖端表面，阴极被施加第一电压，阳极具有基本上在所述光束轴上的第一孔，并且施加有高于所述第一电压的第二电压;控制电极，其具有基本上在所述光束轴上的第二孔，并施加低于所述第一电压以控制所述第一电压的电流阴极，第二孔径大于尖端表面，具有基本上在梁轴上的第三孔的引导电极设置在阴极和阳极之间，并施加有比第一电压高的电压并且低于第二电压电压，所述第三孔小于所述尖端表面，以及透镜电极，所述透镜电极具有基本上在所述光束轴上的第四孔引导电极和阳极，并施加低于第一电压的电压以形成电子束的交叉图像，第四孔径大于第三孔径。

5. 发明授权

US5866300A Method of and system for exposing pattern on object by charged particle beam 失效
公开(公告)号：US5866300A
公开(公告)日：1999-02-02
申请号：US651586
申请日：1996-05-22
申请人： Takamasa Satoh , Soichiro Arai , Kenichi Miyazawa , Yoshihisa Ooaeh , Junichi Kai , Hiroshi Yasuda
发明人： Takamasa Satoh , Soichiro Arai , Kenichi Miyazawa , Yoshihisa Ooaeh , Junichi Kai , Hiroshi Yasuda
IPC分类号： G03F7/20 , H01J37/302 , H01J37/317 , H01L21/027
CPC分类号： B82Y10/00 , B82Y40/00 , G03F7/2059 , H01J37/3023 , H01J37/3174 , Y10S430/143
摘要： Before figure data are expanded into a bitmap, a checksum is calculated in unit of bitmap data corresponding to a cell stripe of scanning over which continuous exposure is possible. When the checksum is calculated after expanding the data into the bitmap, the interim calculation result of refocus values is used. In exposure, exposing k number of sub rectangular areas by repeating a sub scanning k number of times, jumping a deflection by a main deflector toward an center of remaining sub rectangular areas whose number is (p-k) inside a main rectangular areas and exposing remained (p-k) number of the sub rectangular areas by repeating the sub scanning (p-k) times after the jumping is settled. In an amplifier & low pass filter for supplying a drive voltage to a sub deflector, the cutoff frequency is lowed during flyback in a sawtooth waveform without changing an amplification factor.

6. 发明授权

US5969365A Charged-particle-beam exposure device and charged-particle-beam exposure method 失效
公开(公告)号：US5969365A
公开(公告)日：1999-10-19
申请号：US917464
申请日：1997-08-26
申请人： Akio Takemoto , Yoshihisa Ooaeh , Tomohiko Abe , Hiroshi Yasuda , Takamasa Satoh , Hideki Nasuno , Hidefumi Yabara , Kenichi Kawakami , Kiichi Sakamoto , Tomohiro Sakazaki , Isamu Seto , Masami Takigawa , Tatsuro Ohkawa
发明人： Akio Takemoto , Yoshihisa Ooaeh , Tomohiko Abe , Hiroshi Yasuda , Takamasa Satoh , Hideki Nasuno , Hidefumi Yabara , Kenichi Kawakami , Kiichi Sakamoto , Tomohiro Sakazaki , Isamu Seto , Masami Takigawa , Tatsuro Ohkawa
IPC分类号： G21K5/10 , H01J37/08 , H01J37/302 , H01J37/304
CPC分类号： H01J37/147 , B82Y10/00 , B82Y40/00 , H01J37/21 , H01J37/3045 , H01J37/3174 , H01J2237/024 , H01J2237/1502 , H01J2237/1504 , H01J2237/216 , H01J2237/30472
摘要： A method of exposing a wafer to a charged-particle beam by directing to the wafer the charged-particle beam deflected by a deflector includes the steps of arranging a plurality of first marks at different heights, focusing the charged-particle beam on each of the first marks by using a focus coil provided above the deflector, obtaining a focus distance for each of the first marks, obtaining deflection-efficiency-correction coefficients for each of the first marks, and using linear functions of the focus distance for approximating the deflection-efficiency-correction coefficients to obtain the deflection-efficiency-correction coefficients for an arbitrary value of the focus distance. A device for carrying out the method is also set forth.

7. 发明授权

US06242751B1 Charged-particle-beam exposure device and charged-particle-beam exposure method 有权
标题翻译：带电粒子束曝光装置和带电粒子束曝光方法
公开(公告)号：US06242751B1
公开(公告)日：2001-06-05
申请号：US09353586
申请日：1999-07-15
申请人： Akio Takemoto , Yoshihisa Ooaeh , Tomohiko Abe , Hiroshi Yasuda , Takamasa Satoh , Hideki Nasuno , Hidefumi Yabara , Kenichi Kawakami , Kiichi Sakamoto , Tomohiro Sakazaki , Isamu Seto , Masami Takigawa , Tatsuro Ohkawa
发明人： Akio Takemoto , Yoshihisa Ooaeh , Tomohiko Abe , Hiroshi Yasuda , Takamasa Satoh , Hideki Nasuno , Hidefumi Yabara , Kenichi Kawakami , Kiichi Sakamoto , Tomohiro Sakazaki , Isamu Seto , Masami Takigawa , Tatsuro Ohkawa
IPC分类号： H01J37302
CPC分类号： H01J37/147 , B82Y10/00 , B82Y40/00 , H01J37/21 , H01J37/3045 , H01J37/3174 , H01J2237/024 , H01J2237/1502 , H01J2237/1504 , H01J2237/216 , H01J2237/30472
摘要： A method of exposing a wafer to a charged-particle beam by directing to the wafer the charged-particle beam deflected by a deflector includes the steps of arranging a plurality of first marks at different heights, focusing the charged-particle beam on each of the first marks by using a focus coil provided above the deflector, obtaining a focus distance for each of the first marks, obtaining deflection-efficiency-correction coefficients for each of the first marks, and using linear functions of the focus distance for approximating the deflection-efficiency-correction coefficients to obtain the deflection-efficiency-correction coefficients for an arbitrary value of the focus distance. A device for carrying out the method is also set forth.
摘要翻译：通过将晶片引导到晶片，通过偏转器偏转的带电粒子束将晶片暴露于带电粒子束的方法包括以下步骤：在不同的高度处布置多个第一标记，将带电粒子束聚焦在每个通过使用设置在偏转器上方的聚焦线圈的第一标记，获得每个第一标记的聚焦距离，获得每个第一标记的偏转效率校正系数，并且使用焦距的线性函数来近似偏转 - 效率校正系数，以获得针对焦距的任意值的偏转效率校正系数。还提出了一种用于执行该方法的装置。

8. 发明授权

US6055719A Method for manufacturing an electrostatic deflector 失效
标题翻译：静电导流板制造方法
公开(公告)号：US6055719A
公开(公告)日：2000-05-02
申请号：US35105
申请日：1998-03-05
申请人： Yoshihisa Ooaeh , Tomohiko Abe , Hiroshi Yasuda
发明人： Yoshihisa Ooaeh , Tomohiko Abe , Hiroshi Yasuda
IPC分类号： G09F21/04 , H01J37/147 , H01J37/305 , H01L21/027
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/1472 , H01J2237/1516 , H01J2237/3175 , Y10T29/49002
摘要： The present invention relates to a charged particle beam exposure apparatus, deflecting a charged particle beam formed into a predetermined shape by being passed through a predetermined transmission mask, and irradiating a predetermined location on the surface of a sample with the charged particle beam. The apparatus comprises: a mirror barrel through which the charged particle beam is passed; and an electrostatic deflector, provided in the mirror barrel, for deflecting the charged particle beam. The electrostatic deflector has a plurality of pairs of electrodes, which are made of a conductive material having carbon as a primary element and are embedded in an internal face of an insulating cylinder. The present invention also relates to a method for forming the electrostatic deflector.
摘要翻译：带电粒子束曝光装置技术领域本发明涉及一种带电粒子束曝光装置，其通过穿过预定的透射掩模使形成为预定形状的带电粒子束偏转，并用带电粒子束照射样品表面上的预定位置。该装置包括：经过带电粒子束的反射镜筒; 以及设置在镜筒中的用于偏转带电粒子束的静电偏转器。静电偏转器具有多对电极，它们由具有碳作为主要元件的导电材料制成，并且嵌入绝缘筒的内表面。本发明还涉及一种用于形成静电偏转器的方法。

9. 发明授权

US5757015A Charged-particle-beam exposure device and charged-particle-beam exposure method 失效
标题翻译：带电粒子束曝光装置和带电粒子束曝光方法
公开(公告)号：US5757015A
公开(公告)日：1998-05-26
申请号：US634410
申请日：1996-04-18
申请人： Akio Takemoto , Yoshihisa Ooaeh , Tomohiko Abe , Hiroshi Yasuda , Takamasa Satoh , Hideki Nasuno , Hidefumi Yabara , Kenichi Kawakami , Kiichi Sakamoto , Tomohiro Sakazaki , Isamu Seto , Masami Takigawa , Tatsuro Ohkawa
发明人： Akio Takemoto , Yoshihisa Ooaeh , Tomohiko Abe , Hiroshi Yasuda , Takamasa Satoh , Hideki Nasuno , Hidefumi Yabara , Kenichi Kawakami , Kiichi Sakamoto , Tomohiro Sakazaki , Isamu Seto , Masami Takigawa , Tatsuro Ohkawa
IPC分类号： G21K5/10 , H01J37/08 , H01J37/302 , H01J37/304
CPC分类号： H01J37/147 , B82Y10/00 , B82Y40/00 , H01J37/21 , H01J37/3045 , H01J37/3174 , H01J2237/024 , H01J2237/1502 , H01J2237/1504 , H01J2237/216 , H01J2237/30472
摘要： A method of exposing a wafer to a charged-particle beam by directing to the wafer the charged-particle beam deflected by a deflector includes the steps of arranging a plurality of first marks at different heights, focusing the charged-particle beam on each of the first marks by using a focus coil provided above the deflector, obtaining a focus distance for each of the first marks, obtaining deflection-efficiency-correction coefficients for each of the first marks, and using linear functions of the focus distance for approximating the deflection-efficiency-correction coefficients to obtain the deflection-efficiency-correction coefficients for an arbitrary value of the focus distance. A device for carrying out the method is also set forth.
摘要翻译：通过将晶片引导到晶片，通过偏转器偏转的带电粒子束将晶片暴露于带电粒子束的方法包括以下步骤：在不同的高度处布置多个第一标记，将带电粒子束聚焦在每个通过使用设置在偏转器上方的聚焦线圈的第一标记，获得每个第一标记的聚焦距离，获得每个第一标记的偏转效率校正系数，并且使用焦距的线性函数来近似偏转 - 效率校正系数，以获得针对焦距的任意值的偏转效率校正系数。还介绍了一种用于执行该方法的设备。

10. 发明授权

US6057907A Method of and system for exposing pattern on object by charged particle beam 失效
标题翻译：通过带电粒子束对物体曝光图案的方法和系统
公开(公告)号：US6057907A
公开(公告)日：2000-05-02
申请号：US132698
申请日：1998-08-12
申请人： Takamasa Satoh , Soichiro Arai , Kenichi Miyazawa , Yoshihisa Ooaeh , Junichi Kai , Hiroshi Yasuda
发明人： Takamasa Satoh , Soichiro Arai , Kenichi Miyazawa , Yoshihisa Ooaeh , Junichi Kai , Hiroshi Yasuda
IPC分类号： G03F7/20 , H01J37/302 , H01J37/317 , H01L21/027 , G03B27/42 , A61N5/00 , G03B27/54
CPC分类号： B82Y10/00 , B82Y40/00 , G03F7/2059 , H01J37/3023 , H01J37/3174 , Y10S430/143
摘要： Before figure data are expanded into a bitmap, a checksum is calculated in unit of bitmap data corresponding to a cell stripe of scanning over which continuous exposure is possible. When the checksum is calculated after expanding the data into the bitmap, the interim calculation result of refocus values is used. In exposure, exposing k number of sub rectangular areas by repeating a sub scanning k number of times, jumping a deflection by a main deflector toward an center of remaining sub rectangular areas whose number is (p-k) inside a main rectangular areas and exposing remained (p-k) number of the sub rectangular areas by repeating the sub scanning (p-k) times after the jumping is settled. In an amplifier & low pass filter for supplying a drive voltage to a sub deflector, the cutoff frequency is lowed during flyback in a sawtooth waveform without changing an amplification factor.
摘要翻译：在将图形数据扩展为位图之前，以对应于可能进行连续曝光的扫描单元条纹的位图数据为单位计算校验和。当在将数据扩展到位图之后计算校验和时，使用重新聚焦值的中间计算结果。在曝光中，通过重复次扫描k次曝光k个子矩形区域，通过主偏转器向主矩形区域内的数量为（pk）的剩余子矩形区域的中心跳跃并保持残留（ pk）通过在跳跃之后重复次扫描（pk）次来确定次矩形区域的数量。在用于向副偏转器提供驱动电压的放大器和低通滤波器中，在锯齿波形的反激期间，截止频率降低，而不改变放大因子。

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