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    • 6. 发明授权
    • Edge detection technique and charged particle radiation equipment
    • 边缘检测技术和带电粒子辐射设备
    • US08953855B2
    • 2015-02-10
    • US12393321
    • 2009-02-26
    • Hitoshi NamaiOsamu KomuroSatoru YamaguchiFumihiro Sasajima
    • Hitoshi NamaiOsamu KomuroSatoru YamaguchiFumihiro Sasajima
    • G06K9/00G06K9/46G06T7/00
    • G06K9/4609G06T7/13
    • An object of the present invention is to provide an edge detection technique and equipment which are capable of stably detecting an edge by suppressing the influence of noise even in the case where the image is obtained by charged particle radiation equipment, such as a scanning electron microscope and has a low S/N ratio. More specifically, the present invention is to propose a technique and equipment which are configured to determine a peak position (edge) on the basis of the following two edge extraction techniques. That is, the present invention is to propose a technique and equipment wherein at least two peaks are formed by using, as edge detection techniques, for example, one peak detection technique having a relatively high sensitivity and the other peak detection technique which is relatively less susceptible to the influence of noise than the one peak detection technique, and wherein a position where the peaks coincide with each other is determined as a true peak position (edge position).
    • 本发明的目的是提供一种能够通过抑制噪声的影响来稳定地检测边缘的边缘检测技术和设备,即使在通过诸如扫描电子显微镜的带电粒子辐射设备获得图像的情况下 并具有较低的S / N比。 更具体地,本发明是提出一种被配置为基于以下两个边缘提取技术来确定峰值位置(边缘)的技术和设备。 也就是说,本发明提出一种技术和设备,其中通过使用作为边缘检测技术的至少两个峰形成例如具有相对较高灵敏度的一个峰值检测技术和相对较少的另一个峰值检测技术 容易受到噪声的影响而不是一个峰值检测技术,并且其中峰值彼此重合的位置被确定为真正的峰值位置(边缘位置)。
    • 7. 发明申请
    • Microstructured pattern inspection method
    • 微结构图案检验方法
    • US20070290697A1
    • 2007-12-20
    • US11798395
    • 2007-05-14
    • Fumihiro SasajimaOsamu KomuroFumio Mizuno
    • Fumihiro SasajimaOsamu KomuroFumio Mizuno
    • G01N23/00
    • G03F7/70608G01N23/225G06T7/0004H01J37/265H01J37/28H01J2237/221H01J2237/24592H01J2237/2487
    • The edges of the reticle are detected with respect to the microstructured patterns exposed by the stepper, and the shapes of the microstructured patterns at the surface and at the bottom of the photoresist are detected. The microstructured patterns are evaluated by calculating, and displaying on the screen, the dislocation vector that represents the relationship in position between the detected patterns on the surface and at the bottom of the photoresist. Furthermore, dislocation vectors between the microstructured patterns at multiple positions in a single-chip or single-shot area or on one wafer are likewise calculated, then the sizes and distribution status of the dislocation vectors at each such position are categorized as characteristic quantities, and the corresponding tendencies are analyzed. Thus, stepper or wafer abnormality is detected.
    • 相对于由步进器暴露的微结构化图案检测掩模版的边缘,并且检测光致抗蚀剂表面和底部处的微结构图案的形状。 通过在屏幕上计算和显示代表光刻胶表面和底部上检测到的图案之间的位置关系的位错矢量来评估微结构化图案。 此外,同样计算单芯片或单次照射区域或一个晶片上的多个位置处的微结构化图案之间的位错矢量,则将每个这样的位置处的位错矢量的尺寸和分布状态分类为特征量,并且 分析相应的趋势。 因此,检测到步进器或晶片异常。
    • 9. 发明授权
    • Microstructured pattern inspection method
    • 微结构图案检验方法
    • US06573499B1
    • 2003-06-03
    • US09684469
    • 2000-10-06
    • Fumihiro SasajimaOsamu KomuroFumio Mizuno
    • Fumihiro SasajimaOsamu KomuroFumio Mizuno
    • G01N23225
    • G03F7/70608G01N23/225G06T7/0004H01J37/265H01J37/28H01J2237/221H01J2237/24592H01J2237/2487
    • The edges of the reticle are detected with respect to the microstructured patterns exposed by the stepper, and the shapes of the microstructured patterns at the surface and at the bottom of the photoresist are detected. The microstructured patterns are evaluated by calculating, and displaying on the screen, the dislocation vector that represents the relationship in position between the detected patterns on the surface and at the bottom of the photoresist. Furthermore, dislocation vectors between the microstructured patterns at multiple positions in a single-chip or single-shot. area or on one wafer are likewise calculated, then the sizes and distribution status of the dislocation vectors at each such position are categorized as characteristic quantities, and the corresponding tendencies are analyzed. Thus, stepper or wafer abnormality is detected.
    • 相对于由步进器暴露的微结构化图案检测掩模版的边缘,并且检测光致抗蚀剂表面和底部处的微结构图案的形状。 通过在屏幕上计算和显示代表光刻胶表面和底部上检测到的图案之间的位置关系的位错矢量来评估微结构化图案。 此外,在单芯片或单次拍摄的多个位置处的微结构化图案之间的位错矢量。 同样计算一个晶片上的面积,然后将每个这样的位置处的位错矢量的尺寸和分布状态分类为特征量,并分析相应的趋势。 因此,检测到步进器或晶片异常。
    • 10. 发明申请
    • EDGE DETECTION TECHNIQUE AND CHARGED PARTICLE RADIATION EQUIPMENT
    • 边缘检测技术和充电颗粒辐射设备
    • US20090226096A1
    • 2009-09-10
    • US12393321
    • 2009-02-26
    • Hitoshi NAMAIOsamu KomuroSatoru YamaguchiFumihiro Sasajima
    • Hitoshi NAMAIOsamu KomuroSatoru YamaguchiFumihiro Sasajima
    • G06K9/48
    • G06K9/4609G06T7/13
    • An object of the present invention is to provide an edge detection technique and equipment which are capable of stably detecting an edge by suppressing the influence of noise even in the case where the image is obtained by charged particle radiation equipment, such as a scanning electron microscope and has a low S/N ratio. More specifically, the present invention is to propose a technique and equipment which are configured to determine a peak position (edge) on the basis of the following two edge extraction techniques. That is, the present invention is to propose a technique and equipment wherein at least two peaks are formed by using, as edge detection techniques, for example, one peak detection technique having a relatively high sensitivity and the other peak detection technique which is relatively less susceptible to the influence of noise than the one peak detection technique, and wherein a position where the peaks coincide with each other is determined as a true peak position (edge position).
    • 本发明的目的是提供一种能够通过抑制噪声的影响来稳定地检测边缘的边缘检测技术和设备,即使在通过诸如扫描电子显微镜的带电粒子辐射设备获得图像的情况下 并具有较低的S / N比。 更具体地,本发明是提出一种被配置为基于以下两个边缘提取技术来确定峰值位置(边缘)的技术和设备。 也就是说,本发明提出一种技术和设备,其中通过使用作为边缘检测技术的至少两个峰形成例如具有相对较高灵敏度的一个峰值检测技术和相对较少的另一个峰值检测技术 容易受到噪声的影响而不是一个峰值检测技术,并且其中峰值彼此一致的位置被确定为真正的峰值位置(边缘位置)。