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1. 发明授权

US5068815A Optical full adder 失效
标题翻译：光学全面添加
公开(公告)号：US5068815A
公开(公告)日：1991-11-26
申请号：US541309
申请日：1990-06-21
申请人： Yoshihiko Mizushima , Kazutoshi Nakajima , Toru Hirohata , Takashi Iida , Yoshihisa Warashina , Kenichi Sugimoto , Tomoko Suzuki , Hirofumi Kan
发明人： Yoshihiko Mizushima , Kazutoshi Nakajima , Toru Hirohata , Takashi Iida , Yoshihisa Warashina , Kenichi Sugimoto , Tomoko Suzuki , Hirofumi Kan
IPC分类号： G02F3/00 , G06E1/04 , G06F7/50 , G06F7/502
CPC分类号： G06F7/502 , G06E1/04
摘要： SUM and CARRY output signals of a first optical half adder are provided to one input terminal of a second optical half adder and an optical latch memory, respectively, and an output signal of the optical latch memory is provided to the other input terminal of the second optical half adder. Input and output of the two optical half adders and optical latch memory are performed through an optical signal. Each optical half adder includes two light-receiving elements each having a symmetrical electrode arrangement in which two Schottky junctions are connected to each other opposite in polarity, and peripheral elements of resistors, a capacitor and an amplifier. The optical latch memory is an optical flip-flop memory in which a high-speed light-receiving element produces an electric signal in response to an input optical signals, and a high-speed light-emitting element produces, in response to the electric signal guided from the light-receiving element, feed-back light to be applied to the light-receiving element and an output optical signal.

2. 发明授权

US5034921A High speed optical memory circuit 失效
标题翻译：高速光存储电路
公开(公告)号：US5034921A
公开(公告)日：1991-07-23
申请号：US375983
申请日：1989-07-06
申请人： Kazutoshi Nakajima , Hirofumi Kan , Kenichi Sugimoto , Yoshihiko Mizushima , Toru Hirohata , Takashi Iida , Yoshihisa Warashina , Toru Hirohata , Takashi Iida
发明人： Kazutoshi Nakajima , Hirofumi Kan , Kenichi Sugimoto , Yoshihiko Mizushima , Toru Hirohata , Takashi Iida , Yoshihisa Warashina , Toru Hirohata , Takashi Iida
IPC分类号： G11C11/42 , G11C7/00 , G11C11/36
CPC分类号： G11C7/005 , G11C11/36
摘要： An optical memory circuit comprises two photodetectors, and an intermediate signal conductor for connecting the two photodetectors, wherein the two photodetectors and the signal conductor are connected in series in a closed circuit, wherein each of the photodetectors comprises two spaced Schottky electrodes symmetrically disposed on a semiconductor substrate and the signal conductor has a capacitance with a time constant of a potential of the signal conductor such that charges are stored in the signal conductor when an optical write signal is incident on one photodetector and stored charges are released from the signal conductor when an optical read signal is incident on the other photodetector.

3. 发明授权

US5109358A Optical flip-flop circuit 失效
标题翻译：光触发器电路
公开(公告)号：US5109358A
公开(公告)日：1992-04-28
申请号：US423203
申请日：1989-10-17
申请人： Yoshihiko Mizushima , Kazutoshi Nakajima , Toru Hirohata , Takashi Iida , Yoshihisa Warashina , Kenichi Sugimoto , Hirofumi Kan
发明人： Yoshihiko Mizushima , Kazutoshi Nakajima , Toru Hirohata , Takashi Iida , Yoshihisa Warashina , Kenichi Sugimoto , Hirofumi Kan
IPC分类号： G11C13/04 , G02F3/00 , G11C11/42 , H03K3/42
CPC分类号： G11C11/42
摘要： An optical flip-flop circuit which includes an electrical power source for providing an electrical signal, a light-receiving element provided in series with the power source for switching the electrical signal in response to an optical signal, a light-emitting element for emitting the optical signal in response to the electric signal, an electrical signal path between the light-receiving element and the light-emitting element, whereby the electrical signal passes from the power source to the light-emitting element in response to the optical signal received by the light-receiving element, a light path for directing the optical signal from the light-emitting element to the light-receiving element, wherein the light path and the electrical signal path form a signal loop through which a signal circulates, said circulating signal comprising the electrical signal through the electrical signal path portion of the signal loop and the optical signal through the light path portion of the signal loop, and input/output means for providing an input optical signal to the light-receiving element and for emitting a portion of the optical signal directed by the light path.
摘要翻译：一种光学触发器电路，其包括用于提供电信号的电源，与电源串联设置的光接收元件，用于响应光信号切换电信号;发光元件，用于发射响应于电信号的光信号，光接收元件和发光元件之间的电信号路径，由此电信号响应于由光接收元件和发光元件接收的光信号而从电源传递到发光元件光接收元件，用于将光信号从发光元件引导到光接收元件的光路，其中光路和电信号路径形成信号循环通过的信号回路，所述循环信号包括通过信号环路的电信号路径部分的电信号和通过信号的光路部分的光信号环路和输入/输出装置，用于向光接收元件提供输入光信号，并用于发射由光路引导的光信号的一部分。

4. 发明授权

US5051573A Optical logic operation system 失效
标题翻译：光逻辑运算系统
公开(公告)号：US5051573A
公开(公告)日：1991-09-24
申请号：US435739
申请日：1989-11-14
申请人： Yoshihiko Mizushima , Kazutoshi Nakajima , Toru Hirohata , Takashi Iida , Yoshihisa Warashina , Kenichi Sugimoto , Hirofumi Kan
发明人： Yoshihiko Mizushima , Kazutoshi Nakajima , Toru Hirohata , Takashi Iida , Yoshihisa Warashina , Kenichi Sugimoto , Hirofumi Kan
IPC分类号： H03K19/14
CPC分类号： H03K19/14
摘要： A plurality of ultra-high speed light receiving elements are provided each of which has two rectifier junctions being connected to each other opposite in polarity and has a substantially symmetrical electrode arrangement. A bias voltage is applied to each of the light receiving elements from one or a plurality of power sources. Electrical signals produced by the light receiving elements in response to input optical pulse signals are superposed on one another to produce one or a plurality of output electrical signals representing a predetermined logic operation with respect to the input optical pulse signals. Depending on the arrangement of its elements, the optical logic operation system functions as an OR circuit, AND circuit, NOT circuit, EXCLUSIVE OR circuit, or half-adder circuit.
摘要翻译：提供了多个超高速光接收元件，每个超高速光接收元件具有彼此相反极性连接的两个整流器接头，并且具有基本上对称的电极布置。偏置电压从一个或多个电源施加到每个光接收元件。响应于输入光脉冲信号由光接收元件产生的电信号彼此重叠以产生表示相对于输入光脉冲信号的预定逻辑运算的一个或多个输出电信号。根据其元件的布置，光逻辑操作系统用作OR电路，AND电路，NOT电路，EXCLUSIVE OR电路或半加法器电路。

5. 发明申请

US20080121928A1 Semiconductor photocathode 审中-公开
标题翻译：半导体光电阴极
公开(公告)号：US20080121928A1
公开(公告)日：2008-05-29
申请号：US11987216
申请日：2007-11-28
申请人： Minoru Niigaki , Kazutoshi Nakajima , Toru Hirohata , Hirofumi Kan
发明人： Minoru Niigaki , Kazutoshi Nakajima , Toru Hirohata , Hirofumi Kan
IPC分类号： H01L31/0336
CPC分类号： H01L31/1035 , H01L31/0735 , Y02E10/544
摘要： A semiconductor photocathode has first and second III-V compound semiconductor layers doped with a p-type impurity and joined to each other to make a heterojunction. The second III-V compound semiconductor layer functions as a light absorbing layer, an energy gap of the second III-V compound semiconductor layer is smaller than that of the first III-V compound semiconductor layer, and Be or C is used as the p-type dopant in each semiconductor layer. At this time, the second III-V compound semiconductor layer may be deposited on the first III-V compound semiconductor layer. The first III-V compound semiconductor layer and the second III-V compound semiconductor layer may contain at least one from each group of (In, Ga, Al) and (As, P, N).
摘要翻译：半导体光电阴极具有掺杂有p型杂质并且彼此接合以形成异质结的第一和第二III-V族化合物半导体层。第二III-V族化合物半导体层用作光吸收层，第二III-V族化合物半导体层的能隙小于第一III-V族化合物半导体层的能隙，使用Be或C作为p 型掺杂剂。此时，第二III-V族化合物半导体层可以沉积在第一III-V族化合物半导体层上。第一III-V族化合物半导体层和第二III-V族化合物半导体层可以含有（In，Ga，Al）和（As，P，N）中的至少一种。

6. 发明申请

US20080121909A1 Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：US20080121909A1
公开(公告)日：2008-05-29
申请号：US11987215
申请日：2007-11-28
申请人： Minoru Niigaki , Toru Hirohata , Kazutoshi Nakajima , Hirofumi Kan
发明人： Minoru Niigaki , Toru Hirohata , Kazutoshi Nakajima , Hirofumi Kan
IPC分类号： H01L33/00 , H01L31/0336
CPC分类号： H01L33/30 , H01L31/03046 , H01L31/1035 , H01L33/02 , H01L33/025 , H01L33/305 , Y02E10/544
摘要： A semiconductor device has first and second III-V compound semiconductor layers one of which functions as a photosensitive layer or as a light emitting layer, which are doped with a p-type impurity in a low concentration, and which are joined to each other to make a heterojunction. An energy gap of the second III-V compound semiconductor layer is smaller than that of the first III-V compound semiconductor layer and the p-type dopant in each semiconductor layer is Be or C. At this time, the second III-V compound semiconductor layer may be deposited on the first III-V compound semiconductor layer. The first III-V compound semiconductor layer and the second III-V compound semiconductor layer may contain at least one from each group of (In, Ga, Al) and (As, P, N).
摘要翻译：半导体器件具有第一和第二III-V族化合物半导体层，其中一个作为感光层或作为发光层，其以低浓度掺杂有p型杂质，并且彼此接合，做异质结。第二III-V族化合物半导体层的能隙比第一III-V族化合物半导体层的能隙小，在各半导体层中的p型掺杂剂为Be或C.此时，第二III-V族化合物半导体层可以沉积在第一III-V族化合物半导体层上。第一III-V族化合物半导体层和第二III-V族化合物半导体层可以含有（In，Ga，Al）和（As，P，N）中的至少一种。

7. 发明申请

US20090273281A1 PHOTOCATHODE AND ELECTRON TUBE HAVING THE SAME 审中-公开
标题翻译：具有相同的光电管和电子管
公开(公告)号：US20090273281A1
公开(公告)日：2009-11-05
申请号：US12432850
申请日：2009-04-30
申请人： Minoru Niigaki , Toru Hirohata , Harumasa Yoshida , Hirofumi Kan
发明人： Minoru Niigaki , Toru Hirohata , Harumasa Yoshida , Hirofumi Kan
IPC分类号： H01J40/06 , H01L29/12
CPC分类号： H01J31/50 , H01J1/34 , H01J40/06 , H01J2231/5001
摘要： The photocathode of the present invention is provided with a supporting substrate composed of a single-crystal compound semiconductor, a light absorbing layer which is formed on the supporting substrate and smaller in an energy band gap than the supporting substrate to absorb incident light transmitted through the supporting substrate, thereby generating photoelectrons, and a surface layer which is formed on the light absorbing layer to lower a work function of the light absorbing layer, in which the supporting substrate comprises Al(1−x)GaxN (0≦X
摘要翻译：本发明的光电阴极设置有由单晶化合物半导体构成的支撑基板，形成在支撑基板上的光吸收层，并且与支撑基板相比能量带隙更小，以吸收透过该基板的入射光支撑基板，从而产生光电子;以及表面层，其形成在光吸收层上以降低光吸收层的功函数，其中支撑衬底包括Al（1-x）GaxN（0≤x≤1 ），并且光吸收层包括由选自Al，Ga和In以及N中的至少一种材料构成的化合物半导体。

8. 发明授权

US06563264B2 Photocathode and electron tube 有权
公开(公告)号：US06563264B2
公开(公告)日：2003-05-13
申请号：US09842831
申请日：2001-04-27
申请人： Minoru Niigaki , Toru Hirohata , Tomoko Mochizuki , Hirofumi Kan
发明人： Minoru Niigaki , Toru Hirohata , Tomoko Mochizuki , Hirofumi Kan
IPC分类号： H01J4018
CPC分类号： H01J1/34 , H01J2201/3423
摘要： This photocathode comprises: InP substrate 1; InAsx2P1−x2(0 x1>0.53) light-absorbing layer 3; InAsx3P1−x3 (0

9. 发明授权

US5986387A Transmission type electron multiplier and electron tube provided 失效
标题翻译：提供透射型电子倍增器和电子管
公开(公告)号：US5986387A
公开(公告)日：1999-11-16
申请号：US964890
申请日：1997-11-05
申请人： Minoru Niigaki , Toru Hirohata , Hirofumi Kan , Masami Yamada
发明人： Minoru Niigaki , Toru Hirohata , Hirofumi Kan , Masami Yamada
IPC分类号： H01J1/32 , H01J31/50 , H01J43/04 , H01J43/10 , H01J43/22 , H01J43/24
CPC分类号： H01J43/045 , H01J1/32 , H01J43/10
摘要： This invention relates to a transmission type electron multiplier having a high secondary electron generation efficiency and having the structure capable of detecting positions of incidence of detected light, and also to an electron tube provided therewith. The electron tube comprises a closed container, an electron source, housed in the closed container, for emitting electrons into the closed container, an anode disposed so as to face the electron source, and a transmission type electron multiplier disposed between the electron source and the anode. Particularly, the transmission type electron multiplier comprises a thin film of diamond or a material containing a principal component of diamond, and a reinforcing member for reinforcing the thin film, the reinforcing member having an aperture for exposing a part of the thin film.
摘要翻译：本发明涉及具有高二次电子发生效率并且具有能够检测检测到的光的入射位置的结构的透射型电子倍增器，以及与其相关的电子管。电子管包括容纳在密闭容器中的密封容器，电子源，用于将电子发射到密闭容器中，设置成面对电子源的阳极和设置在电子源和电子源之间的透射型电子倍增器阳极。特别地，透射型电子倍增器包括金刚石薄膜或含有金刚石主要成分的材料，以及用于增强薄膜的加强构件，所述加强构件具有用于暴露薄膜的一部分的孔。

10. 发明授权

US5982094A Electron tube with polycrystalline diamond photocathode 失效
标题翻译：电子管与多晶金刚石光电阴极
公开(公告)号：US5982094A
公开(公告)日：1999-11-09
申请号：US931459
申请日：1997-09-17
申请人： Minoru Niigaki , Toru Hirohata , Hirofumi Kan , Masami Yamada
发明人： Minoru Niigaki , Toru Hirohata , Hirofumi Kan , Masami Yamada
IPC分类号： H01J1/34 , H01J40/16 , H01J43/08 , H01J40/06
CPC分类号： H01J40/16 , H01J1/34 , H01J43/08 , H01J2201/3421 , H01J2231/50
摘要： A photocathode includes a first layer of polycrystalline diamond or a material mainly composed of polycrystalline diamond. The first layer of polycrystalline diamond may be terminated with hydrogen, or oxygen, and a second layer of an alkali metal or compound of an alkali metal, may be provided on the first layer of polycrystalline diamond whose surface is terminated with hydrogen or oxygen. The photocathode can be use for both reflection and transmission electron tubes and can yield a quantum efficiency higher than that in a monocrystal diamond thin film.
摘要翻译：光电阴极包括第一层多晶金刚石或主要由多晶金刚石构成的材料。第一层多晶金刚石可以用氢或氧终止，并且第二层碱金属或碱金属化合物可以在其表面用氢或氧终止的第一多晶金刚石层上提供。光电阴极可以用于反射和透射电子管，并且可以产生比单晶金刚石薄膜中的量子效率更高的量子效率。

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