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1. 发明授权

US5034921A High speed optical memory circuit 失效
标题翻译：高速光存储电路
公开(公告)号：US5034921A
公开(公告)日：1991-07-23
申请号：US375983
申请日：1989-07-06
申请人： Kazutoshi Nakajima , Hirofumi Kan , Kenichi Sugimoto , Yoshihiko Mizushima , Toru Hirohata , Takashi Iida , Yoshihisa Warashina , Toru Hirohata , Takashi Iida
发明人： Kazutoshi Nakajima , Hirofumi Kan , Kenichi Sugimoto , Yoshihiko Mizushima , Toru Hirohata , Takashi Iida , Yoshihisa Warashina , Toru Hirohata , Takashi Iida
IPC分类号： G11C11/42 , G11C7/00 , G11C11/36
CPC分类号： G11C7/005 , G11C11/36
摘要： An optical memory circuit comprises two photodetectors, and an intermediate signal conductor for connecting the two photodetectors, wherein the two photodetectors and the signal conductor are connected in series in a closed circuit, wherein each of the photodetectors comprises two spaced Schottky electrodes symmetrically disposed on a semiconductor substrate and the signal conductor has a capacitance with a time constant of a potential of the signal conductor such that charges are stored in the signal conductor when an optical write signal is incident on one photodetector and stored charges are released from the signal conductor when an optical read signal is incident on the other photodetector.

2. 发明授权

US5068815A Optical full adder 失效
标题翻译：光学全面添加
公开(公告)号：US5068815A
公开(公告)日：1991-11-26
申请号：US541309
申请日：1990-06-21
申请人： Yoshihiko Mizushima , Kazutoshi Nakajima , Toru Hirohata , Takashi Iida , Yoshihisa Warashina , Kenichi Sugimoto , Tomoko Suzuki , Hirofumi Kan
发明人： Yoshihiko Mizushima , Kazutoshi Nakajima , Toru Hirohata , Takashi Iida , Yoshihisa Warashina , Kenichi Sugimoto , Tomoko Suzuki , Hirofumi Kan
IPC分类号： G02F3/00 , G06E1/04 , G06F7/50 , G06F7/502
CPC分类号： G06F7/502 , G06E1/04
摘要： SUM and CARRY output signals of a first optical half adder are provided to one input terminal of a second optical half adder and an optical latch memory, respectively, and an output signal of the optical latch memory is provided to the other input terminal of the second optical half adder. Input and output of the two optical half adders and optical latch memory are performed through an optical signal. Each optical half adder includes two light-receiving elements each having a symmetrical electrode arrangement in which two Schottky junctions are connected to each other opposite in polarity, and peripheral elements of resistors, a capacitor and an amplifier. The optical latch memory is an optical flip-flop memory in which a high-speed light-receiving element produces an electric signal in response to an input optical signals, and a high-speed light-emitting element produces, in response to the electric signal guided from the light-receiving element, feed-back light to be applied to the light-receiving element and an output optical signal.

3. 发明授权

US5109358A Optical flip-flop circuit 失效
标题翻译：光触发器电路
公开(公告)号：US5109358A
公开(公告)日：1992-04-28
申请号：US423203
申请日：1989-10-17
申请人： Yoshihiko Mizushima , Kazutoshi Nakajima , Toru Hirohata , Takashi Iida , Yoshihisa Warashina , Kenichi Sugimoto , Hirofumi Kan
发明人： Yoshihiko Mizushima , Kazutoshi Nakajima , Toru Hirohata , Takashi Iida , Yoshihisa Warashina , Kenichi Sugimoto , Hirofumi Kan
IPC分类号： G11C13/04 , G02F3/00 , G11C11/42 , H03K3/42
CPC分类号： G11C11/42
摘要： An optical flip-flop circuit which includes an electrical power source for providing an electrical signal, a light-receiving element provided in series with the power source for switching the electrical signal in response to an optical signal, a light-emitting element for emitting the optical signal in response to the electric signal, an electrical signal path between the light-receiving element and the light-emitting element, whereby the electrical signal passes from the power source to the light-emitting element in response to the optical signal received by the light-receiving element, a light path for directing the optical signal from the light-emitting element to the light-receiving element, wherein the light path and the electrical signal path form a signal loop through which a signal circulates, said circulating signal comprising the electrical signal through the electrical signal path portion of the signal loop and the optical signal through the light path portion of the signal loop, and input/output means for providing an input optical signal to the light-receiving element and for emitting a portion of the optical signal directed by the light path.
摘要翻译：一种光学触发器电路，其包括用于提供电信号的电源，与电源串联设置的光接收元件，用于响应光信号切换电信号;发光元件，用于发射响应于电信号的光信号，光接收元件和发光元件之间的电信号路径，由此电信号响应于由光接收元件和发光元件接收的光信号而从电源传递到发光元件光接收元件，用于将光信号从发光元件引导到光接收元件的光路，其中光路和电信号路径形成信号循环通过的信号回路，所述循环信号包括通过信号环路的电信号路径部分的电信号和通过信号的光路部分的光信号环路和输入/输出装置，用于向光接收元件提供输入光信号，并用于发射由光路引导的光信号的一部分。

4. 发明授权

US5051573A Optical logic operation system 失效
标题翻译：光逻辑运算系统
公开(公告)号：US5051573A
公开(公告)日：1991-09-24
申请号：US435739
申请日：1989-11-14
申请人： Yoshihiko Mizushima , Kazutoshi Nakajima , Toru Hirohata , Takashi Iida , Yoshihisa Warashina , Kenichi Sugimoto , Hirofumi Kan
发明人： Yoshihiko Mizushima , Kazutoshi Nakajima , Toru Hirohata , Takashi Iida , Yoshihisa Warashina , Kenichi Sugimoto , Hirofumi Kan
IPC分类号： H03K19/14
CPC分类号： H03K19/14
摘要： A plurality of ultra-high speed light receiving elements are provided each of which has two rectifier junctions being connected to each other opposite in polarity and has a substantially symmetrical electrode arrangement. A bias voltage is applied to each of the light receiving elements from one or a plurality of power sources. Electrical signals produced by the light receiving elements in response to input optical pulse signals are superposed on one another to produce one or a plurality of output electrical signals representing a predetermined logic operation with respect to the input optical pulse signals. Depending on the arrangement of its elements, the optical logic operation system functions as an OR circuit, AND circuit, NOT circuit, EXCLUSIVE OR circuit, or half-adder circuit.
摘要翻译：提供了多个超高速光接收元件，每个超高速光接收元件具有彼此相反极性连接的两个整流器接头，并且具有基本上对称的电极布置。偏置电压从一个或多个电源施加到每个光接收元件。响应于输入光脉冲信号由光接收元件产生的电信号彼此重叠以产生表示相对于输入光脉冲信号的预定逻辑运算的一个或多个输出电信号。根据其元件的布置，光逻辑操作系统用作OR电路，AND电路，NOT电路，EXCLUSIVE OR电路或半加法器电路。

5. 发明授权

US5020064A Electromagnetic wave device 失效
标题翻译：电磁波装置
公开(公告)号：US5020064A
公开(公告)日：1991-05-28
申请号：US393275
申请日：1989-08-14
申请人： Yoshihiko Mizushima , Takashi Iida , Toru Hirohata , Kenichi Sugimoto , Yoshihisa Warashina , Kazutoshi Nakajima
发明人： Yoshihiko Mizushima , Takashi Iida , Toru Hirohata , Kenichi Sugimoto , Yoshihisa Warashina , Kazutoshi Nakajima
IPC分类号： G01R23/16 , H01S3/09 , H01S3/10 , H01S3/108 , H01S3/30 , H01S4/00
CPC分类号： H01S3/0903
摘要： An electromagnetic wave device having an amplification function comprises a medium containing free carriers, means for applying a magnetic field to the medium, means for applying an input electromagnetic wave to the medium in a direction perpendicular to the magnetic field, and means for generating an electric field to accelerating the carriers in the direction of the input electromagnetic wave. A frequency of the input electromagnetic wave is within the range of the plasma frequency plus or minus the cyclotron frequency, and a polarization direction of the input electromagnetic wave is perpendicular both to the magnetic field and its own traveling direction. Furthermore, the device has such functions as oscillation, modulation, frequency conversion, etc. depending on the type of added units.

6. 发明申请

US20080121928A1 Semiconductor photocathode 审中-公开
标题翻译：半导体光电阴极
公开(公告)号：US20080121928A1
公开(公告)日：2008-05-29
申请号：US11987216
申请日：2007-11-28
申请人： Minoru Niigaki , Kazutoshi Nakajima , Toru Hirohata , Hirofumi Kan
发明人： Minoru Niigaki , Kazutoshi Nakajima , Toru Hirohata , Hirofumi Kan
IPC分类号： H01L31/0336
CPC分类号： H01L31/1035 , H01L31/0735 , Y02E10/544
摘要： A semiconductor photocathode has first and second III-V compound semiconductor layers doped with a p-type impurity and joined to each other to make a heterojunction. The second III-V compound semiconductor layer functions as a light absorbing layer, an energy gap of the second III-V compound semiconductor layer is smaller than that of the first III-V compound semiconductor layer, and Be or C is used as the p-type dopant in each semiconductor layer. At this time, the second III-V compound semiconductor layer may be deposited on the first III-V compound semiconductor layer. The first III-V compound semiconductor layer and the second III-V compound semiconductor layer may contain at least one from each group of (In, Ga, Al) and (As, P, N).
摘要翻译：半导体光电阴极具有掺杂有p型杂质并且彼此接合以形成异质结的第一和第二III-V族化合物半导体层。第二III-V族化合物半导体层用作光吸收层，第二III-V族化合物半导体层的能隙小于第一III-V族化合物半导体层的能隙，使用Be或C作为p 型掺杂剂。此时，第二III-V族化合物半导体层可以沉积在第一III-V族化合物半导体层上。第一III-V族化合物半导体层和第二III-V族化合物半导体层可以含有（In，Ga，Al）和（As，P，N）中的至少一种。

7. 发明申请

US20080121909A1 Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：US20080121909A1
公开(公告)日：2008-05-29
申请号：US11987215
申请日：2007-11-28
申请人： Minoru Niigaki , Toru Hirohata , Kazutoshi Nakajima , Hirofumi Kan
发明人： Minoru Niigaki , Toru Hirohata , Kazutoshi Nakajima , Hirofumi Kan
IPC分类号： H01L33/00 , H01L31/0336
CPC分类号： H01L33/30 , H01L31/03046 , H01L31/1035 , H01L33/02 , H01L33/025 , H01L33/305 , Y02E10/544
摘要： A semiconductor device has first and second III-V compound semiconductor layers one of which functions as a photosensitive layer or as a light emitting layer, which are doped with a p-type impurity in a low concentration, and which are joined to each other to make a heterojunction. An energy gap of the second III-V compound semiconductor layer is smaller than that of the first III-V compound semiconductor layer and the p-type dopant in each semiconductor layer is Be or C. At this time, the second III-V compound semiconductor layer may be deposited on the first III-V compound semiconductor layer. The first III-V compound semiconductor layer and the second III-V compound semiconductor layer may contain at least one from each group of (In, Ga, Al) and (As, P, N).
摘要翻译：半导体器件具有第一和第二III-V族化合物半导体层，其中一个作为感光层或作为发光层，其以低浓度掺杂有p型杂质，并且彼此接合，做异质结。第二III-V族化合物半导体层的能隙比第一III-V族化合物半导体层的能隙小，在各半导体层中的p型掺杂剂为Be或C.此时，第二III-V族化合物半导体层可以沉积在第一III-V族化合物半导体层上。第一III-V族化合物半导体层和第二III-V族化合物半导体层可以含有（In，Ga，Al）和（As，P，N）中的至少一种。

8. 发明申请

US20070096648A1 Photocathode 失效
标题翻译：光电阴极
公开(公告)号：US20070096648A1
公开(公告)日：2007-05-03
申请号：US11585936
申请日：2006-10-25
申请人： Kazutoshi Nakajima , Minoru Niigaki , Tomoko Mochizuki , Toru Hirohata
发明人： Kazutoshi Nakajima , Minoru Niigaki , Tomoko Mochizuki , Toru Hirohata
IPC分类号： H01J40/06
CPC分类号： H01J1/34 , H01J2201/3423
摘要： A semiconductor photocathode 1 includes: a transparent substrate 11; a first electrode 13, formed on the transparent substrate 11 and enabling passage of light that has been transmitted through the transparent substrate 11; a window layer 14, formed on the first electrode 13 and formed of a semiconductor material with a thickness of no less than 10 nm and no more than 200 nm; a light absorbing layer 15, formed on the window layer 14, formed of a semiconductor material that is lattice matched to the window layer 14, is narrower in energy band gap than the window layer 14, and in which photoelectrons are excited in response to the incidence of light; an electron emission layer 16, formed on the light absorbing layer 15, formed of a semiconductor material that is lattice matched to the light absorbing layer 15, and emitting the photoelectrons excited in the light absorbing layer 15 to the exterior from a surface; and a second electrode 18, formed on the electron emission layer.
摘要翻译：半导体光电阴极1包括：透明基板11; 第一电极13，其形成在透明基板11上，并能透过透明基板11的光通过; 窗口层14，其形成在第一电极13上并且由不小于10nm且不大于200nm的厚度的半导体材料形成; 形成在与窗口层14格子匹配的半导体材料的窗口层14上的光吸收层15的能带隙比窗口层14更窄，并且其中光电子响应于光的发生; 由与光吸收层15晶格匹配的半导体材料形成的光吸收层15上形成的电子发射层16，并且将从光吸收层15激发的光电子从表面发射到外部; 以及形成在电子发射层上的第二电极18。

9. 发明授权

US07816866B2 Photocathode comprising a plurality of openings on an electron emission layer 失效
标题翻译：光电阴极包括在电子发射层上的多个开口
公开(公告)号：US07816866B2
公开(公告)日：2010-10-19
申请号：US11585936
申请日：2006-10-25
申请人： Kazutoshi Nakajima , Minoru Niigaki , Tomoko Mochizuki , Toru Hirohata
发明人： Kazutoshi Nakajima , Minoru Niigaki , Tomoko Mochizuki , Toru Hirohata
IPC分类号： H01J40/06 , H01J37/08 , G21K5/10 , H01L29/12
CPC分类号： H01J1/34 , H01J2201/3423
摘要： A semiconductor photocathode 1 includes: a transparent substrate 11; a first electrode 13, formed on the transparent substrate 11 and enabling passage of light that has been transmitted through the transparent substrate 11; a window layer 14, formed on the first electrode 13 and formed of a semiconductor material with a thickness of no less than 10 nm and no more than 200 nm; a light absorbing layer 15, formed on the window layer 14, formed of a semiconductor material that is lattice matched to the window layer 14, is narrower in energy band gap than the window layer 14, and in which photoelectrons are excited in response to the incidence of light; an electron emission layer 16, formed on the light absorbing layer 15, formed of a semiconductor material that is lattice matched to the light absorbing layer 15, and emitting the photoelectrons excited in the light absorbing layer 15 to the exterior from a surface; and a second electrode 18, formed on the electron emission layer.
摘要翻译：半导体光电阴极1包括：透明基板11; 第一电极13，其形成在透明基板11上，并能透过透明基板11的光通过; 窗口层14，其形成在第一电极13上并且由不小于10nm且不大于200nm的厚度的半导体材料形成; 形成在与窗口层14格子匹配的半导体材料的窗口层14上的光吸收层15的能带隙比窗口层14更窄，并且其中光电子响应于光的发生; 由与光吸收层15晶格匹配的半导体材料形成的光吸收层15上形成的电子发射层16，并且将从光吸收层15激发的光电子从表面发射到外部; 以及形成在电子发射层上的第二电极18。

10. 发明申请

US20100230596A1 PHOTOCONDUCTIVE ANTENNA ELEMENT 有权
标题翻译：光电天线元件
公开(公告)号：US20100230596A1
公开(公告)日：2010-09-16
申请号：US12738163
申请日：2008-10-24
申请人： Kazuyoshi Kuroyanagi , Kazutoshi Nakajima
发明人： Kazuyoshi Kuroyanagi , Kazutoshi Nakajima
IPC分类号： H01L31/09 , G21K5/00
CPC分类号： H01Q1/44 , H01L31/0224 , H01L31/0304 , H01L31/09 , H01Q1/38 , H01Q9/16 , H01Q9/28 , H01Q21/062 , H01S1/02 , Y02E10/544
摘要： This invention relates to a photoconductive antenna element having a structure capable of preventing element characteristics from deteriorating and attain a smaller size at the same time. This photoconductive antenna element (17) comprises a pair of electrodes (21) formed on a semiconductor layer (19). Each electrode (21) is constituted by an antenna part (22), pad parts (23), and a line part (24) connecting them, while the line part (24) includes a parallel portion (24a) extending from the antenna part (22). In the line part (24) of one electrode (21), a portion other than the antenna region (A) is bent opposite to the other electrode (21). In the line part (24) of the other electrode (21), a portion other than the antenna region (A) is bent opposite to the one electrode (21). This structure can prevent the photoconductive antenna element (17) from deteriorating its element characteristics and make it smaller.
摘要翻译：本发明涉及具有能够同时防止元件特性恶化并达到较小尺寸的结构的光电导天线元件。该光电导天线元件（17）包括形成在半导体层（19）上的一对电极（21）。每个电极（21）由天线部分（22），焊盘部分（23）和连接它们的线部分（24）构成，而线部分（24）包括从天线部分延伸的平行部分（22）。在一个电极（21）的线路部分（24）中，与天线区域（A）以外的部分相对于另一个电极（21）弯曲。在另一个电极（21）的线路部分（24）中，天线区域（A）之外的部分与一个电极（21）相对弯曲。这种结构可以防止光导天线元件（17）劣化其元件特性并使其变小。

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