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1. 发明申请

US20090260845A1 DISPLAY DEVICE, VENT TUBE WITH GLASS RING, PHOSPHATE GLASS RING, AND METHOD OF PRODUCING THE SAME 失效
标题翻译：显示装置，带玻璃环的通风管，磷酸盐玻璃环及其生产方法
公开(公告)号：US20090260845A1
公开(公告)日：2009-10-22
申请号：US12495257
申请日：2009-06-30
申请人： Yoshiaki KAI , Shinya HASEGAWA
发明人： Yoshiaki KAI , Shinya HASEGAWA
IPC分类号： H01J5/00 , C04B35/64 , B32B1/08
CPC分类号： H01J11/54 , C03B19/06 , C03C8/04 , C03C8/08 , C03C8/14 , C03C8/16 , H01J7/22 , H01J9/261 , H01J11/12 , H01J11/48 , Y10T428/1317
摘要： The present invention reduces the amount of lead used in a display device and improves its long-term moisture resistance. This display device includes: a panel (1b) provided with a hole (11) formed therein; a phosphate glass member (13); and a tube (12) mounted on the panel (1b) via the glass member (13) so as to cover the hole (11). The glass member (13) is bonded to at least a partial area of the inner wall surface of the tube (12) and to a partial area of the panel (1b), so that the entire periphery of the end face of the tube (12) located on the side of the hole (13) is in contact with the panel (1b).
摘要翻译：本发明减少了显示装置中使用的铅的量并且改善了其长期耐湿性。该显示装置包括：设置有形成在其中的孔（11）的面板（1b）磷酸盐玻璃构件（13）; 以及经由所述玻璃构件（13）安装在所述面板（1b）上以覆盖所述孔（11）的管（12）。玻璃构件（13）被接合到管（12）的内壁表面和面板（1b）的局部区域的至少一部分区域，使得管的端面的整个周边位于孔（13）侧面的底板（12）与面板（1b）接触。

2. 发明申请

US20120021588A1 METHOD FOR MANUFACTURING SOI SUBSTRATE AND SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造SOI衬底和半导体器件的方法
公开(公告)号：US20120021588A1
公开(公告)日：2012-01-26
申请号：US13184591
申请日：2011-07-18
申请人： Shinya HASEGAWA , Atsuo ISOBE , Motomu KURATA
发明人： Shinya HASEGAWA , Atsuo ISOBE , Motomu KURATA
IPC分类号： H01L21/265
CPC分类号： H01L21/76254
摘要： One object is to provide excellent electric characteristics of an end portion of a single crystal semiconductor layer having a tapered shape. An embrittled region is formed in a single crystal semiconductor substrate by irradiating the single crystal semiconductor substrate with accelerated ions. Then, the single crystal semiconductor substrate and a base substrate are bonded to each other with an insulating film interposed therebetween and a first single crystal semiconductor layer is formed over the base substrate with the insulating film interposed therebetween by separating the single crystal semiconductor substrate at the embrittled region. After that, a second single crystal semiconductor layer having a tapered end portion is formed by performing dry etching on the first single crystal semiconductor layer, and etching is performed on the end portion of the second single crystal semiconductor layer in a state where a potential on the base substrate side is a ground potential.
摘要翻译：一个目的是提供具有锥形形状的单晶半导体层的端部的优异的电特性。通过用加速离子照射单晶半导体衬底，在单晶半导体衬底中形成脆化区域。然后，将单晶半导体衬底和基底衬底彼此接合，并且隔着绝缘膜在基底衬底上形成第一单晶半导体层，通过在第一单晶半导体衬底上分离单晶半导体衬底脆弱的地区。之后，通过在第一单晶半导体层上进行干蚀刻来形成具有锥形端部的第二单晶半导体层，并且在第二单晶半导体层的端部进行蚀刻，基底侧是接地电位。

3. 发明申请

US20100314998A1 PLASMA DISPLAY PANEL AND METHOD OF PRODUCING THE SAME 审中-公开
标题翻译：等离子显示面板及其制造方法
公开(公告)号：US20100314998A1
公开(公告)日：2010-12-16
申请号：US12852289
申请日：2010-08-06
申请人： Shinya HASEGAWA , Osamu INOUE , Seiji TOYODA , Akira KAWASE , Yasuhiko NAKADA , Kazuhiro YOKOTA , Tsutomu KOSHIZUKA
发明人： Shinya HASEGAWA , Osamu INOUE , Seiji TOYODA , Akira KAWASE , Yasuhiko NAKADA , Kazuhiro YOKOTA , Tsutomu KOSHIZUKA
IPC分类号： H01J17/49 , H01J9/00
CPC分类号： H01J11/12 , C03C3/066 , C03C3/145 , C03C8/04 , H01J11/38
摘要： A plasma display panel of the present invention includes display electrodes and address electrodes that cross each other. The electrode to be covered with the first dielectric layer contains at least one selected from silver and copper. The first glass contains Bi2O3. The first glass further contains 0 to 4 wt % of MoO3 and 0 to 4 wt % of WO3, and the total of the contents of MoO3 and WO3 that are contained in the first glass is in a range of 0.1 to 8 wt %. The first glass may contain, as components thereof: 0 to 15 wt % SiO2; 10 to 50 wt % B2O3; 15 to 50 wt % ZnO; 0 to 10 wt % Al2O3; 2 to 40 wt % Bi2O3; 0 to 5 wt % MgO; 5 to 38 wt % CaO+SrO+BaO; 0 to 4 wt % MoO3; and 0 to 4 wt % WO3, and the total of the contents of MoO3 and WO3 that are contained in the first glass is in the range of 0.1 to 8 wt %.
摘要翻译：本发明的等离子体显示面板包括彼此交叉的显示电极和地址电极。被第一介电层覆盖的电极含有选自银和铜中的至少一种。第一个玻璃含有Bi2O3。第一玻璃还含有0〜4重量％的MoO 3和0〜4重量％的WO 3，第一玻璃中含有的MoO 3和WO 3的含量的总和为0.1〜8重量％。作为其成分，第一玻璃可以含有0〜15重量％的SiO 2; 10〜50重量％的B2O3; 15〜50wt％的ZnO; 0〜10重量％的Al 2 O 3; 2〜40重量％Bi 2 O 3; 0〜5重量％的MgO; 5〜38重量％CaO + SrO + BaO; 0至4重量％的MoO 3; 和0〜4重量％的WO 3，第一玻璃中含有的MoO 3，WO 3的含量的合计为0.1〜8重量％。

4. 发明申请

US20070278606A1 PHOTOELECTRIC CONVERSION ELEMENT AND MANUFACTURING METHOD OF PHOTOELECTRIC CONVERSION ELEMENT 有权
标题翻译：光电转换元件和光电转换元件的制造方法
公开(公告)号：US20070278606A1
公开(公告)日：2007-12-06
申请号：US11737477
申请日：2007-04-19
申请人： Shinya SASAGAWA , Shinya HASEGAWA , Hidekazu TAKAHASHI , Tatsuya ARAO
发明人： Shinya SASAGAWA , Shinya HASEGAWA , Hidekazu TAKAHASHI , Tatsuya ARAO
IPC分类号： H01L31/075 , H01L31/18
CPC分类号： H01L31/035281 , H01L21/32136 , H01L21/32137 , H01L27/14643 , Y02E10/50
摘要： An object is to provide a photoelectric conversion element having a side surface with different taper angles by conducting etching of a photoelectric conversion layer step-by-step. A pin photodiode has a high response speed compared with a pn photodiode but has a disadvantage of large dark current. One cause of the dark current is considered to be conduction through an etching residue which is generated in etching and deposited on a side surface of the photoelectric conversion layer. Leakage current of the photoelectric conversion element is reduced by forming a structure in which a side surface has two different tapered shapes, which conventionally has a uniform surface, so that the photoelectric conversion layer has a side surface of a p-layer and a side surface of an n-layer, which are not in the same plane.
摘要翻译：本发明的目的是提供一种具有不同锥角的侧面的光电转换元件，该光电转换元件逐步进行光电转换层的蚀刻。与pn光电二极管相比，pin光电二极管具有高响应速度，但是具有大的暗电流的缺点。认为暗电流的一个原因是通过在蚀刻中产生并沉积在光电转换层的侧表面上的蚀刻残余物导电。光电转换元件的泄漏电流通过形成侧表面具有两个不同的锥形形状的结构而降低，通常具有均匀的表面，使得光电转换层具有p层的侧表面和侧表面的n层，它们不在同一平面。

5. 发明申请

US20060276322A1 GLASS COMPOSITION FOR COVERING ELECTRODES AND GLASS PASTE CONTAINING THE SAME 失效
标题翻译：用于覆盖电极的玻璃组合物和包含该电极的玻璃料
公开(公告)号：US20060276322A1
公开(公告)日：2006-12-07
申请号：US11465048
申请日：2006-08-16
申请人： Shinya HASEGAWA , Osamu INOUE , Seiji TOYODA
发明人： Shinya HASEGAWA , Osamu INOUE , Seiji TOYODA
IPC分类号： C03C3/14 , C03C3/066
CPC分类号： C03C3/066 , C03C3/145 , C03C8/04 , H01J2211/38
摘要： A glass composition for covering electrodes of the present invention contains: 0 to 15 wt % SiO2; 10 to 50 wt % B2O3; 15 to 50 wt % ZnO; 0 to 10 wt % Al2O3; 2 to 40 wt % Bi2O3; 0 to 5 wt % MgO; 5 to 38 wt % CaO+SrO+BaO; 0 to 0.1 wt % Li2O+Na2O+K2O; 0 to 4 wt % MoO3; and 0 to 4 wt % WO3, and the total of the contents of MoO3 and WO3 is in the range of 0.1 to 8 wt %. The glass composition for covering electrodes of the present invention may contain: 0 to 2 wt % SiO2; 10 to 50 wt % B2O3; 15 to 50 wt % ZnO; 0 to 10 wt % Al2O3; 2 to 40 wt % Bi2O3; 0 to 5 wt % MgO; 5 to 38 wt % CaO+SrO+BaO; 0 to 4 wt % MoO3; and 0 to 4 wt % WO3, and the total of the contents of MoO3 and WO3 may be in the range of 0.1 to 8 wt %.
摘要翻译：本发明的覆盖电极用玻璃组合物含有：0〜15重量％的SiO 2; 10至50重量％B 2 O 3 3; 15〜50wt％的ZnO; 0至10重量％的Al 2 O 3 3; 2至40重量％的Bi 2 O 3 3; 0〜5重量％的MgO; 5〜38重量％CaO + SrO + BaO; 0〜0.1重量％Li 2 O + Na 2 O + K 2 O; 0至4wt％MoO 3 3; 和0至4重量％的WO 3，MoO 3 3和WO 3 3的含量的总和在0.1至8的范围内重量％。本发明的覆盖电极用玻璃组合物可以含有0〜2重量％的SiO 2， 10至50重量％B 2 O 3 3; 15〜50wt％的ZnO; 0至10重量％的Al 2 O 3 3; 2至40重量％的Bi 2 O 3 3; 0〜5重量％的MgO; 5〜38重量％CaO + SrO + BaO; 0至4wt％MoO 3 3; 和0〜4重量％的WO 3，MoO 3 3和WO 3的含量的总和可以在0.1〜 8重量％。

6. 发明申请

US20110235046A1 IMAGING APPARATUS 审中-公开
标题翻译：成像设备
公开(公告)号：US20110235046A1
公开(公告)日：2011-09-29
申请号：US13070024
申请日：2011-03-23
申请人： Kazunori MARUYAMA , Shinya HASEGAWA , Akinori MIYAMOTO , Norihiko ITANI
发明人： Kazunori MARUYAMA , Shinya HASEGAWA , Akinori MIYAMOTO , Norihiko ITANI
IPC分类号： G01J3/45
CPC分类号： G02B21/14 , G02B21/0004
摘要： An imaging apparatus includes an optical source configured to emit an electromagnetic wave, a wave dividing unit configured to divide the wave from the optical source into a first and a second wave beam, a probe optical source configured to emit a probe beam, a probe-beam dividing unit configured to divide the probe beam into a first and a second probe beam, a first crystal on which the first crystal is irradiated through an object and the first probe beam is incident, a second crystal on which the second crystal is irradiated through an object and the second probe beam is incident, an interference unit configured to allow the first probe beam from the first crystal to interfere with the second probe beam from the second crystal, and an image pickup device configured to capture an interference figure between the first and the second probe beam.
摘要翻译：一种成像装置，包括：被配置为发射电磁波的光源;波分割部，被配置为将来自光源的波分成第一和第二波束;被配置为发射探测光束的探测光源; 光束分割单元，被配置为将探测光束分成第一和第二探测光束，第一晶体，其上通过物体照射第一晶体，并且第一探测光束入射;第二晶体，其上照射第二晶体的第二晶体物体和第二探测光束入射;干涉单元，被配置为允许来自第一晶体的第一探测光束与来自第二晶体的第二探测光束干涉;以及图像拾取器件，被配置为捕获第一和第二探测光束。

7. 发明申请

US20100276773A1 PHOTOELECTRIC CONVERSION ELEMENT AND MANUFACTURING METHOD OF PHOTOELECTRIC CONVERSION ELEMENT 有权
标题翻译：光电转换元件和光电转换元件的制造方法
公开(公告)号：US20100276773A1
公开(公告)日：2010-11-04
申请号：US12834040
申请日：2010-07-12
申请人： Shinya SASAGAWA , Shinya HASEGAWA , Hidekazu Takahashi , Tatsuya Arao
发明人： Shinya SASAGAWA , Shinya HASEGAWA , Hidekazu Takahashi , Tatsuya Arao
IPC分类号： H01L31/0216 , H01L31/0232 , H01L31/0352 , H01L31/105
CPC分类号： H01L31/035281 , H01L21/32136 , H01L21/32137 , H01L27/14643 , Y02E10/50
摘要： An object is to provide a photoelectric conversion element having a side surface with different taper angles by conducting etching of a photoelectric conversion layer step-by-step. A pin photodiode has a high response speed compared with a pn photodiode but has a disadvantage of large dark current. One cause of the dark current is considered to be conduction through an etching residue which is generated in etching and deposited on a side surface of the photoelectric conversion layer. Leakage current of the photoelectric conversion element is reduced by forming a structure in which a side surface has two different tapered shapes, which conventionally has a uniform surface, so that the photoelectric conversion layer has a side surface of a p-layer and a side surface of an n-layer, which are not in the same plane.
摘要翻译：本发明的目的是提供一种具有不同锥角的侧面的光电转换元件，该光电转换元件逐步进行光电转换层的蚀刻。与pn光电二极管相比，pin光电二极管具有高响应速度，但是具有大的暗电流的缺点。认为暗电流的一个原因是通过在蚀刻中产生并沉积在光电转换层的侧表面上的蚀刻残渣导电。光电转换元件的泄漏电流通过形成侧表面具有两个不同的锥形形状的结构而降低，通常具有均匀的表面，使得光电转换层具有p层的侧表面和侧表面的n层，它们不在同一平面。

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