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1. 发明授权

US08759835B2 Display device and method for manufacturing the same 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US08759835B2
公开(公告)日：2014-06-24
申请号：US13104074
申请日：2011-05-10
申请人： Noriko Miyagi , Masayuki Sakakura , Tatsuya Arao , Ritsuko Nagao , Yoshifumi Tanada
发明人： Noriko Miyagi , Masayuki Sakakura , Tatsuya Arao , Ritsuko Nagao , Yoshifumi Tanada
IPC分类号： H01L29/04 , H01L33/00
CPC分类号： H01L27/124 , G02F1/133345 , G09G3/3233 , G09G2300/0842 , G09G2300/0861 , H01L23/5228 , H01L27/1222 , H01L27/1248 , H01L27/3276 , H01L27/3279 , H01L33/40 , H01L51/5206 , H01L51/5212 , H01L51/5221 , H01L51/5228 , H01L51/5234 , H01L2251/5315
摘要： An object of the present invention is to decrease substantial resistance of an electrode such as a transparent electrode or a wiring, and furthermore, to provide a display device for which is possible to apply same voltage to light-emitting elements. In the invention, a auxiliary wiring that is formed in one layer in which a conductive film of a semiconductor element such as an electrode, wiring, a signal line, a scanning line, or a power supply line is connected to an electrode typified by a second electrode, and a wiring. It is preferable that the auxiliary wiring is formed into a conductive film to include low resistive material, especially, formed to include lower resistive material than the resistance of an electrode and a wiring that is required to reduce the resistance.
摘要翻译：本发明的一个目的是降低诸如透明电极或布线的电极的实质电阻，此外，提供一种可以向发光元件施加相同电压的显示装置。在本发明中，形成在电极，布线，信号线，扫描线或电源线等半导体元件的导电膜的一层中形成的辅助布线连接到以第二电极和布线。优选地，辅助布线形成为包括低电阻材料的导电膜，特别地，形成为包括比电阻的阻抗更低的电阻材料和降低电阻所需的布线。

2. 发明授权

US08415664B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08415664B2
公开(公告)日：2013-04-09
申请号：US13271272
申请日：2011-10-12
申请人： Tatsuya Arao , Daiki Yamada , Hidekazu Takahashi , Naoto Kusumoto , Kazuo Nishi , Yuusuke Sugawara , Hironobu Takahashi
发明人： Tatsuya Arao , Daiki Yamada , Hidekazu Takahashi , Naoto Kusumoto , Kazuo Nishi , Yuusuke Sugawara , Hironobu Takahashi
IPC分类号： H01L31/0232
CPC分类号： H01L27/14632 , H01L27/14621 , H01L27/14623 , H01L27/14625 , H01L27/1464 , H01L27/14643 , H01L27/14687 , H01L27/14689 , H01L27/14692
摘要： Techniques are provided for obtaining a photoelectric conversion device having a favorable spectral sensitivity characteristic and reduced variation in output current without a contamination substance mixed into a photoelectric conversion layer or a transistor, and for obtaining a highly reliable semiconductor device including a photoelectric conversion device. A semiconductor device may include, over an insulating surface, a first electrode; a second electrode; a color filter between the first electrode and the second electrode; an overcoat layer covering the color filter; and a photoelectric conversion layer over the overcoat layer, where one end portion of the photoelectric conversion layer is in contact with the first electrode, and where an end portion of the color filter lies inside the other end portion of the photoelectric conversion layer.
摘要翻译：提供了用于获得具有良好的光谱灵敏度特性和减少的输出电流变化的光电转换装置的技术，而没有混入光电转换层或晶体管中的污染物质，并且用于获得包括光电转换装置的高度可靠的半导体装置。半导体器件可以在绝缘表面上包括第一电极; 第二电极; 在第一电极和第二电极之间的滤色器; 覆盖滤色器的外涂层; 以及在所述外涂层上的光电转换层，其中所述光电转换层的一个端部与所述第一电极接触，并且所述滤色器的端部位于所述光电转换层的另一端部的内部。

3. 发明申请

US20120235154A1 Semiconductor Device 有权
标题翻译：半导体器件
公开(公告)号：US20120235154A1
公开(公告)日：2012-09-20
申请号：US13474993
申请日：2012-05-18
申请人： Tatsuya Arao
发明人： Tatsuya Arao
IPC分类号： H01L33/42
CPC分类号： G02F1/136209 , G02F1/136213 , G02F1/136227 , H01L27/124 , H01L27/1255 , H01L29/66757 , H01L29/66765 , H01L29/78633
摘要： To realize a semiconductor device including a capacitor element capable of obtaining a sufficient capacitor without reducing an opening ratio, in which a pixel electrode is flattened in order to control a defect in orientation of liquid crystal. A semiconductor device of the present invention includes a light-shielding film formed on the thin film transistor, a capacitor insulating film formed on the light-shielding film, a conductive layer formed on the capacitor insulating film, and a pixel electrode that is formed so as to be electrically connected to the conductive layer, in which a storage capacitor element comprises the light-shielding film, the capacitor insulating film, and the conductive layer, whereby an area of a region serving as the capacitor element can be increased.
摘要翻译：为了实现包括能够获得足够的电容器而不降低开口率的电容器元件的半导体器件，其中像素电极被平坦化以便控制液晶取向的缺陷。本发明的半导体器件包括形成在薄膜晶体管上的遮光膜，形成在遮光膜上的电容器绝缘膜，形成在电容器绝缘膜上的导电层，以及形成为这样的像素电极为了与导电层电连接，其中存储电容器元件包括遮光膜，电容器绝缘膜和导电层，由此可以增加用作电容器元件的区域的面积。

4. 发明授权

US08237179B2 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US08237179B2
公开(公告)日：2012-08-07
申请号：US13241351
申请日：2011-09-23
申请人： Shunpei Yamazaki , Jun Koyama , Tatsuya Arao , Munehiro Azami
发明人： Shunpei Yamazaki , Jun Koyama , Tatsuya Arao , Munehiro Azami
IPC分类号： H01L33/00
CPC分类号： H01L27/3265 , H01L27/124 , H01L27/1255 , H01L27/3246 , H01L27/3258 , H01L27/3262 , H01L27/3276 , H01L29/78633
摘要： A light emitting device is provided which can prevent a change in gate voltage due to leakage or other causes and at the same time can prevent the aperture ratio from lowering. A capacitor storage is formed from a connection wiring line, an insulating film, and a capacitance wiring line. The connection wiring line is formed over a gate electrode and an active layer of a TFT of a pixel, and is connected to the active layer. The insulating film is formed on the connection wiring line. The capacitance wiring line is formed on the insulating film. This structure enables the capacitor storage to overlap the TFT, thereby increasing the capacity of the capacitor storage while keeping the aperture ratio from lowering. Accordingly, a change in gate voltage due to leakage or other causes can be avoided to prevent a change in luminance of an OLED and flickering of screen in analog driving.
摘要翻译：提供一种可以防止由于泄漏或其它原因引起的栅极电压变化并且同时可以防止开口率降低的发光器件。电容器存储器由连接布线，绝缘膜和电容布线形成。连接布线形成在栅电极和像素的TFT的有源层上，并与有源层连接。绝缘膜形成在连接布线上。电容布线形成在绝缘膜上。这种结构使得电容器存储与TFT重叠，从而在保持开口率降低的同时增加电容器存储的容量。因此，可以避免由于泄漏或其他原因导致的栅极电压的变化，以防止OLED的亮度变化和模拟驱动中屏幕的闪烁。

5. 发明授权

US08154096B2 Photoelectric conversion element and manufacturing method of photoelectric conversion element 有权
标题翻译：光电转换元件及光电转换元件的制造方法
公开(公告)号：US08154096B2
公开(公告)日：2012-04-10
申请号：US12834040
申请日：2010-07-12
申请人： Shinya Sasagawa , Shinya Hasegawa , Hidekazu Takahashi , Tatsuya Arao
发明人： Shinya Sasagawa , Shinya Hasegawa , Hidekazu Takahashi , Tatsuya Arao
IPC分类号： H01L27/14 , H01L31/00 , H01L31/0232
CPC分类号： H01L31/035281 , H01L21/32136 , H01L21/32137 , H01L27/14643 , Y02E10/50
摘要： An object is to provide a photoelectric conversion element having a side surface with different taper angles by conducting etching of a photoelectric conversion layer step-by-step. A pin photodiode has a high response speed compared with a pn photodiode but has a disadvantage of large dark current. One cause of the dark current is considered to be conduction through an etching residue which is generated in etching and deposited on a side surface of the photoelectric conversion layer. Leakage current of the photoelectric conversion element is reduced by forming a structure in which a side surface has two different tapered shapes, which conventionally has a uniform surface, so that the photoelectric conversion layer has a side surface of a p-layer and a side surface of an n-layer, which are not in the same plane.
摘要翻译：本发明的目的是提供一种具有不同锥角的侧面的光电转换元件，该光电转换元件逐步进行光电转换层的蚀刻。与pn光电二极管相比，pin光电二极管具有高响应速度，但是具有大的暗电流的缺点。认为暗电流的一个原因是通过在蚀刻中产生并沉积在光电转换层的侧表面上的蚀刻残余物导电。光电转换元件的泄漏电流通过形成侧表面具有两个不同的锥形形状的结构而降低，通常具有均匀的表面，使得光电转换层具有p层的侧表面和侧表面的n层，它们不在同一平面。

6. 发明申请

US20110210335A1 Display Device and Method for Manufacturing the Same 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20110210335A1
公开(公告)日：2011-09-01
申请号：US13104074
申请日：2011-05-10
申请人： Noriko Miyagi , Masayuki Sakakura , Tatsuya Arao , Ritsuko Nagao , Yoshifumi Tanada
发明人： Noriko Miyagi , Masayuki Sakakura , Tatsuya Arao , Ritsuko Nagao , Yoshifumi Tanada
IPC分类号： H01L27/15 , H01L33/08
CPC分类号： H01L27/124 , G02F1/133345 , G09G3/3233 , G09G2300/0842 , G09G2300/0861 , H01L23/5228 , H01L27/1222 , H01L27/1248 , H01L27/3276 , H01L27/3279 , H01L33/40 , H01L51/5206 , H01L51/5212 , H01L51/5221 , H01L51/5228 , H01L51/5234 , H01L2251/5315
摘要： An object of the present invention is to decrease substantial resistance of an electrode such as a transparent electrode or a wiring, and furthermore, to provide a display device for which is possible to apply same voltage to light-emitting elements. In the invention, a auxiliary wiring that is formed in one layer in which a conductive film of a semiconductor element such as an electrode, wiring, a signal line, a scanning line, or a power supply line is connected to an electrode typified by a second electrode, and a wiring. It is preferable that the auxiliary wiring is formed into a conductive film to include low resistive material, especially, formed to include lower resistive material than the resistance of an electrode and a wiring that is required to reduce the resistance.
摘要翻译：本发明的一个目的是降低诸如透明电极或布线的电极的实质电阻，此外，提供一种可以向发光元件施加相同电压的显示装置。在本发明中，形成在电极，布线，信号线，扫描线或电源线等半导体元件的导电膜的一层中形成的辅助布线连接到以第二电极和布线。优选地，辅助布线形成为包括低电阻材料的导电膜，特别地，形成为包括比电阻的阻抗更低的电阻材料和降低电阻所需的布线。

7. 发明授权

US07977680B2 Semiconductor device having thin film transistors on a metal substrate 有权
标题翻译：在金属基板上具有薄膜晶体管的半导体器件
公开(公告)号：US07977680B2
公开(公告)日：2011-07-12
申请号：US12170588
申请日：2008-07-10
申请人： Tatsuya Arao , Atsuo Isobe , Toru Takayama
发明人： Tatsuya Arao , Atsuo Isobe , Toru Takayama
IPC分类号： H01L29/04 , H01L31/036 , H01L35/24
CPC分类号： G02F1/133305 , G02F1/1362 , G02F1/136213 , G02F1/136227 , G02F2001/136295 , H01L27/124 , H01L27/1255 , H01L27/3244 , H01L29/66742 , H01L29/78603
摘要： In a semiconductor device having a substrate which has a metal surface, an insulating film which is formed on the substrate having the metal surface, and a pixel unit which is formed on the insulating film; the pixel unit includes a TFT, and wiring lines connected with the TFT, and a storage capacitor is constituted by the substrate (11) having the metal surface, the insulating film (12), and the wiring line (21). As the insulating film is thinner, and as the area of a region where the insulating film and the wiring line lie in contact is larger, the storage capacitor is endowed with a larger capacity.
摘要翻译：在具有金属表面的基板的半导体器件中，形成在具有金属表面的基板上的绝缘膜和形成在绝缘膜上的像素单元; 像素单元包括TFT和与TFT连接的布线，并且存储电容器由具有金属表面的基板（11），绝缘膜（12）和布线（21）构成。由于绝缘膜更薄，并且随着绝缘膜和布线接触的区域的面积较大，所以存储电容器具有较大的容量。

8. 发明申请

US20100029068A1 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE PRODUCTION SYSTEM 有权
标题翻译：半导体器件和半导体器件生产系统
公开(公告)号：US20100029068A1
公开(公告)日：2010-02-04
申请号：US12533401
申请日：2009-07-31
申请人： Atsuo ISOBE , Shunpei YAMAZAKI , Koji DAIRIKI , Hiroshi SHIBATA , Chiho KOKUBO , Tatsuya ARAO , Masahiko HAYAKAWA , Hidekazu MIYAIRI , Akihisa SHIMOMURA , Koichiro TANAKA , Mai AKIBA
发明人： Atsuo ISOBE , Shunpei YAMAZAKI , Koji DAIRIKI , Hiroshi SHIBATA , Chiho KOKUBO , Tatsuya ARAO , Masahiko HAYAKAWA , Hidekazu MIYAIRI , Akihisa SHIMOMURA , Koichiro TANAKA , Mai AKIBA
IPC分类号： H01L21/311 , H01L21/20
CPC分类号： H01L27/1222 , B23K26/0738 , H01L21/02354 , H01L21/02356 , H01L21/02675 , H01L21/02683 , H01L21/02686 , H01L21/02691 , H01L21/2026 , H01L21/32139 , H01L21/84 , H01L27/1214 , H01L27/1218 , H01L27/124 , H01L27/1255 , H01L27/1274 , H01L27/1281 , H01L27/1296 , H01L29/66757 , H01L29/78603 , H01L29/78675 , H01L29/78696 , Y10S118/90 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.
摘要翻译：提供了一种使用激光晶化方法的半导体器件制造系统，其可以避免在TFT的沟道形成区域中形成晶界，从而防止晶界大大降低TFT的迁移率，降低导通电流，并且提高截止电流。在绝缘膜上形成矩形或条纹图案凹陷和突出部分。在绝缘膜上形成半导体膜。通过沿着条形图案凹陷和绝缘膜的突出部分沿着矩形的长轴或短轴方向运行激光来对连续波激光照射半导体膜。尽管在激光中最优选连续波激光，但也可以在照射半导体膜时使用脉冲振荡激光。

9. 发明申请

US20100019337A1 PHOTOELECTRIC CONVERSION ELEMENT AND MANUFACTURING METHOD OF PHOTOELECTRIC CONVERSION ELEMENT 有权
公开(公告)号：US20100019337A1
公开(公告)日：2010-01-28
申请号：US12575910
申请日：2009-10-08
申请人： Shinya SASAGAWA , Shinya Hasegawa , Hidekazu Takahashi , Tatsuya Arao
发明人： Shinya SASAGAWA , Shinya Hasegawa , Hidekazu Takahashi , Tatsuya Arao
IPC分类号： H01L31/0232 , H01L31/0352
CPC分类号： H01L31/035281 , H01L21/32136 , H01L21/32137 , H01L27/14643 , Y02E10/50
摘要： An object is to provide a photoelectric conversion element having a side surface with different taper angles by conducting etching of a photoelectric conversion layer step-by-step. A pin photodiode has a high response speed compared with a pn photodiode but has a disadvantage of large dark current. One cause of the dark current is considered to be conduction through an etching residue which is generated in etching and deposited on a side surface of the photoelectric conversion layer. Leakage current of the photoelectric conversion element is reduced by forming a structure in which a side surface has two different tapered shapes, which conventionally has a uniform surface, so that the photoelectric conversion layer has a side surface of a p-layer and a side surface of an n-layer, which are not in the same plane.

10. 发明申请

US20100006854A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100006854A1
公开(公告)日：2010-01-14
申请号：US12501801
申请日：2009-07-13
申请人： Koji ONO , Hideomi SUZAWA , Tatsuya ARAO
发明人： Koji ONO , Hideomi SUZAWA , Tatsuya ARAO
IPC分类号： H01L33/00
CPC分类号： H01L27/1222 , G02F1/13624 , H01L27/12 , H01L27/1214 , H01L27/124 , H01L27/127 , H01L29/42384 , H01L29/4908 , H01L29/66757 , H01L29/78621 , H01L29/78627 , H01L33/08 , H01L33/62 , H01L2029/7863 , H01L2924/0002 , H01L2924/00
摘要： In a semiconductor device, typically an active matrix display device, the structure of TFTs arranged in the respective circuits are made suitable in accordance with the function of the circuit, and along with improving the operating characteristics and the reliability of the semiconductor device, the manufacturing cost is reduced and the yield is increased by reducing the number of process steps. A semiconductor device has a semiconductor layer, an insulating film formed contacting the semiconductor layer, and a gate electrode having a tapered portion on the insulating film, in the semiconductor device, the semiconductor layer has a channel forming region, a first impurity region for forming a source region or a drain region and containing a single conductivity type impurity element, and a second impurity region for forming an LDD region contacting the channel forming region, a portion of the second impurity region is formed overlapping a gate electrode, and the concentration of the single conductivity type impurity element contained in the second impurity region becomes larger with distance from the channel forming region.
摘要翻译：在半导体器件（通常为有源矩阵显示器件）中，根据电路的功能，布置在各个电路中的TFT的结构是合适的，并且随着半导体器件的工作特性和可靠性的提高，制造降低成本，并通过减少工艺步骤的数量来提高产量。半导体器件具有半导体层，与半导体层接触形成的绝缘膜和在绝缘膜上具有锥形部分的栅电极，在半导体器件中，半导体层具有沟道形成区，形成第一杂质区源极区域或漏极区域，并且包含单一导电型杂质元素，以及用于形成与沟道形成区域接触的LDD区域的第二杂质区域，第二杂质区域的一部分与栅电极重叠，并且浓度包含在第二杂质区域中的单一导电型杂质元素随着与沟道形成区域的距离而变大。

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