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热词
    • 1. 发明授权
    • Method and apparatus for aligning two objects, and method and apparatus
for providing a desired gap between two objects
    • 用于对准两个对象的方法和装置,以及用于在两个对象之间提供所希望的差距的方法和装置
    • US5100234A
    • 1992-03-31
    • US538186
    • 1990-06-13
    • Yoriyuki IshibashiRyoichi HiranoKyoji Yamashita
    • Yoriyuki IshibashiRyoichi HiranoKyoji Yamashita
    • G03F9/00
    • G03F9/7049G03F9/7023
    • A first diffraction grating is formed on a mask, and a second diffraction grating is formed on a wafer. Two light beams having slightly different frequencies interfere with each other and are diffracted as they travel through the first diffraction grating, are reflected by the second diffraction grating, and again pass through the first diffraction grating. As a result, they change into thrice diffracted light beams. The diffracted light beams are combined into a detection light beam which has a phase shift .phi..sub.A representing the displacement between the wafer and the mask, or a phase shift .phi..sub.G representing the gap between the wafer and the mask. The detection light beam is converted into a detection signal. The phase difference between the detection signal and a reference signal having no phase shifts are calculated, thus determining phase shift .phi..sub.A or .phi..sub.G. The displacement or the gap is determined from the phase shift. In accordance with the displacement or the gap, the wafer and the mask are aligned to each other, or the gap between them is adjusted to a desired value. Since the detection signal is generated from diffracted light beams, its S/N ratio is sufficiently great. Therefore, the displacement or the gap is determined with high precision. In addition, it is possible with the invention to perform the aligning of the wafer and the mask and the adjusting of the gap therebetween, simultaneously. Further, the incident light may be either circularly polarized light or non-polarized light.
    • 2. 发明授权
    • Method and apparatus for aligning two objects, and method and apparatus
for providing a desired gap between two objects
    • 用于对准两个物体的方法和装置,以及用于在两个物体之间提供期望间隙的方法和装置
    • US4988197A
    • 1991-01-29
    • US291276
    • 1988-12-28
    • Yoriyuki IshibashiRyoichi HiranoKyoji Yamashita
    • Yoriyuki IshibashiRyoichi HiranoKyoji Yamashita
    • G03F9/00
    • G03F9/7049G03F9/7023
    • A first diffraction grating is formed on a mask, and a second diffraction grating is formed on a wafer. Two light beams having slightly different frequencies interfere with each other and are diffracted as they travel through the first diffraction grating, are reflected by the second diffraction grating, and again pass through the first diffraction grating. As a result, they change into thrice diffracted light beams. The diffracted light beams are combined into a detection light beam which has a phase shift .phi..sub.A representing the displacement between the wafer and the mask, or a phase shift .phi..sub.G representing the gap between the wafer and the mask. The detection light beam is converted into a detection signal. The phase difference between the detection signal and a reference signal having no phase shifts are calculated, thus determining phase shift .phi..sub.A or .phi..sub.G. The displacement or the gap is determined from the phase shift. In accordance with the displacement or the gap, the wafer and the mask are aligned to each other, or the gap between them is adjusted to a desired value. Since the detection signal is generated from diffracted light beams, its S/N ratio is sufficiently great. Therefore, the displacement or the gap is determined with high precision. In addition, it is possible with the invention to perform the aligning of the wafer and the mask and the adjusting of the gap therebetween, simultaneously.
    • 4. 发明授权
    • Pattern inspection apparatus
    • 图案检验仪
    • US07421109B2
    • 2008-09-02
    • US10642760
    • 2003-08-19
    • Hideo TsuchiyaKyoji YamashitaToshiyuki WatanabeIkunao IsomuraToru TojoYasushi Sanada
    • Hideo TsuchiyaKyoji YamashitaToshiyuki WatanabeIkunao IsomuraToru TojoYasushi Sanada
    • G06K9/00G01B11/00G01J1/10
    • G06T7/0004G06T2207/30148
    • A pattern inspecting method, comprising preparing a sample having a first and a second inspection regions and an imaging device having a plurality of pixels, scanning the first inspection region to a first direction using the imaging device to obtain a first measurement pattern representing at least parts of the first inspection region, scanning the second inspection region to the first direction using the imaging device to obtain a second measurement pattern representing at least parts of the second inspection region, comparing the first measurement pattern and the second measurement pattern with each other to determine presence or absence of a defect formed on the sample, and controlling a scanning condition for scanning a pattern of the second inspection region by the imaging device so as to keep the same with the scanning condition when the pattern of the first inspection region is scanned by the imaging device.
    • 一种图案检查方法,包括准备具有第一和第二检查区域的样本和具有多个像素的成像装置,使用成像装置将第一检查区域扫描到第一方向,以获得表示至少部分的第一测量图案 使用所述成像装置将所述第二检查区域扫描到所述第一方向,以获得表示所述第二检查区域的至少一部分的第二测量图案,将所述第一测量图案和所述第二测量图案彼此进行比较,以确定 存在或不存在形成在样品上的缺陷,以及控制用于通过成像装置扫描第二检查区域的图案的扫描条件,以便当第一检查区域的图案被扫描时与扫描条件保持相同 成像装置。
    • 6. 发明申请
    • Semiconductor device
    • 半导体器件
    • US20080042214A1
    • 2008-02-21
    • US11892053
    • 2007-08-20
    • Daisaku IkomaAtsuhiro KajiyaKatsuhiro OotaniKyoji Yamashita
    • Daisaku IkomaAtsuhiro KajiyaKatsuhiro OotaniKyoji Yamashita
    • H01L27/092H01L29/78
    • H01L21/76895H01L21/823475H01L27/0207
    • A semiconductor device includes a semiconductor substrate; a diffusion region which is formed in the semiconductor substrate and serves as a region for the formation of a MIS transistor; an element isolation region surrounding the diffusion region; at least one gate conductor film which is formed across the diffusion region and the element isolation region, includes a gate electrode part located on the diffusion region and a gate interconnect part located on the element isolation region, and has a constant dimension in the gate length direction; and an interlayer insulating film covering the gate electrode. The semiconductor device further includes a gate contact which passes through the interlayer insulating film, is connected to the gate interconnect part, and has the dimension in the gate length direction larger than the gate interconnect part.
    • 半导体器件包括半导体衬底; 扩散区,其形成在半导体衬底中并用作用于形成MIS晶体管的区域; 围绕扩散区域的元件隔离区域; 形成在扩散区域和元件隔离区域两侧的至少一个栅极导体膜包括位于扩散区域上的栅极电极部分和位于元件隔离区域上的栅极互连部件,并且栅极长度具有恒定的尺寸 方向; 以及覆盖所述栅电极的层间绝缘膜。 半导体器件还包括通过层间绝缘膜的栅极接触,连接到栅极互连部分,并且具有大于栅极互连部分的栅极长度方向的尺寸。