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1. 发明授权

US06195229B1 Thin film MR head and method of making wherein pole trim takes place at the wafer level 有权
标题翻译：薄膜MR磁头及其制造方法，其中磁极修整发生在晶片级
公开(公告)号：US06195229B1
公开(公告)日：2001-02-27
申请号：US09385844
申请日：1999-08-30
申请人： Yong Shen , Bertha Higa-Baral , Lien-Chang Wang
发明人： Yong Shen , Bertha Higa-Baral , Lien-Chang Wang
IPC分类号： G11B533
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3116 , G11B5/3163 , G11B5/3967 , G11B2005/3996 , Y10T29/49032 , Y10T29/49046
摘要： A method of manufacturing a thin film merged magnetic head including an inductive write structure and a magnetoresistive sensor uses a patterned protection layer to protect a second shield/bottom pole layer in regions spaced from the pole tip of the inductive write structure. A window is provided in the protection layer. During manufacture, the configuration comprises a first shield layer, a magnetoresistive element, a second shield layer serving as a bottom pole, a protection layer, a protection window, a write gap, a top pole, and a pole tip structure. The use of a protection layer and window results in the formation of channels in the second shield layer adjacent to a pedestal that supports the inductive write structure. The channels prevent magnetic flux from extending toward the second shield layer beyond the width of the pole tip structure. This structure reduces side writing with a consequent improvement in off-track performance. The width of the second shield layer allows the magnetoresistive element to be shielded.
摘要翻译：制造包括电感写入结构和磁阻传感器的薄膜合并磁头的方法使用图案化保护层来保护与电感写入结构的磁极末端隔开的区域中的第二屏蔽/底极层。在保护层中设置一个窗口。在制造时，该结构包括第一屏蔽层，磁阻元件，用作底极的第二屏蔽层，保护层，保护窗，写间隙，顶极和极尖结构。使用保护层和窗口导致在与支撑感性写入结构的基座相邻的第二屏蔽层中形成通道。通道防止磁通量向第二屏蔽层延伸超过极端结构的宽度。这种结构减少了侧面写入，从而改善了非轨道性能。第二屏蔽层的宽度允许屏蔽磁阻元件。

2. 发明授权

US5996213A Thin film MR head and method of making wherein pole trim takes place at the wafer level 失效
标题翻译：薄膜MR磁头及其制造方法，其中磁极修整发生在晶片级
公开(公告)号：US5996213A
公开(公告)日：1999-12-07
申请号：US15970
申请日：1998-01-30
申请人： Yong Shen , Bertha Higa-Baral , Lien-Chang Wang
发明人： Yong Shen , Bertha Higa-Baral , Lien-Chang Wang
IPC分类号： G11B5/31 , G11B5/39 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3967 , G11B2005/3996 , G11B5/3116 , G11B5/3163 , Y10T29/49032 , Y10T29/49046
摘要： A method of manufacturing a thin film merged magnetic head including an inductive write structure and a magnetoresistive sensor uses a patterned protection layer to protect a second shield/bottom pole layer in regions spaced from the pole tip of the inductive write structure. A window is provided in the protection layer. During manufacture, the configuration comprises a first shield layer, a magnetoresistive element, a second shield layer serving as a bottom pole, a protection layer, a protection window, a write gap, a top pole, and a pole tip structure. The use of a protection layer and window results in the formation of channels in the second shield layer adjacent to a pedestal that supports the inductive write structure. The channels prevent magnetic flux from extending toward the second shield layer beyond the width of the pole tip structure. This structure reduces side writing with a consequent improvement in off-track performance. The width of the second shield layer allows the magnetoresistive element to be shielded.
摘要翻译：制造包括电感写入结构和磁阻传感器的薄膜合并磁头的方法使用图案化保护层来保护与电感写入结构的磁极末端隔开的区域中的第二屏蔽/底极层。在保护层中设置一个窗口。在制造时，该结构包括第一屏蔽层，磁阻元件，用作底极的第二屏蔽层，保护层，保护窗，写间隙，顶极和极尖结构。使用保护层和窗口导致在与支撑感性写入结构的基座相邻的第二屏蔽层中形成通道。通道防止磁通量向第二屏蔽层延伸超过极端结构的宽度。这种结构减少了侧面写入，从而改善了非轨道性能。第二屏蔽层的宽度允许屏蔽磁阻元件。

3. 发明授权

US06445536B1 Dielectric stencil-defined write head for MR, GMR, and spin valve high density recording heads 失效
标题翻译：用于MR，GMR和自旋阀高密度记录头的介质模板定义写头
公开(公告)号：US06445536B1
公开(公告)日：2002-09-03
申请号：US09140903
申请日：1998-08-27
申请人： Steven C. Rudy , Hugh C. Hiner , Lien-Chang Wang , Yong Shen , Ut Tran , Yunju Ra , Durga Ravipati
发明人： Steven C. Rudy , Hugh C. Hiner , Lien-Chang Wang , Yong Shen , Ut Tran , Yunju Ra , Durga Ravipati
IPC分类号： G11B533
CPC分类号： G11B5/3163 , G11B5/3109 , G11B5/3116 , G11B5/313 , G11B5/3967
摘要： A thin film head apparatus and method for forming such a thin film head. In one approach, the present invention recites forming a cavity in a dielectric layer. Next, a layer of high magnetic field saturation (HBsat) material is sputter-deposited over the dielectric layer such that the HBsat material is deposited into the cavity formed in the dielectric layer. The cavity in the dielectric layer functions as a mold or “stencil” for the HBsat material. The HBsat material deposited into the cavity is used to form the first core of a thin film head. After the formation of the first core of the thin film head, a gap layer of material is deposited above the dielectric layer and above the first core. Next, a layer of HBsat material is sputter-deposited above the gap layer of material and above the first core of the thin film head. The layer of HBsat material disposed above the gap layer of material and above the first core is used to form the second core of the thin film head. Hence, this invention forms first and second cores of a thin film head using sputter deposition processes. As a result, selected HBsat materials which were not well suited to conventional thin film head formation methods can now be used to form the cores of thin film head structures.
摘要翻译：一种用于形成这种薄膜头的薄膜头装置和方法。在一种方法中，本发明阐述了在电介质层中形成空腔。接下来，将一层高磁场饱和（HBsat）材料溅射沉积在电介质层上，使得HBsat材料沉积到形成在电介质层中的空腔中。电介质层中的空腔用作HBsat材料的模具或“模板”。沉积到腔中的HBsat材料用于形成薄膜头的第一芯。在形成薄膜头的第一芯之后，材料的间隙层沉积在介电层上方并在第一芯上方。接下来，将一层HBsat材料溅射沉积在材料的间隙层的上方并位于薄膜头的第一芯上方。设置在材料的间隙层之上和第一芯之上的HBsat材料层用于形成薄膜头的第二芯。因此，本发明使用溅射沉积工艺形成薄膜头的第一和第二芯。结果，现在可以使用非常适合于常规薄膜头形成方法的所选HBsat材料来形成薄膜头结构的芯。

4. 发明授权

US08533937B1 Method of forming a fully wrapped-around shielded PMR writer pole 失效
标题翻译：形成完全缠绕屏蔽PMR写入极的方法
公开(公告)号：US08533937B1
公开(公告)日：2013-09-17
申请号：US13275926
申请日：2011-10-18
申请人： Jinwen Wang , Weimin Si , Jianxin Fang , Ying Hong , Hongzhou Jiang , Ching-Huang Lu , Yan Chen , Donghong Li , Lien-Chang Wang , Lieping Zhong , Tao Pan
发明人： Jinwen Wang , Weimin Si , Jianxin Fang , Ying Hong , Hongzhou Jiang , Ching-Huang Lu , Yan Chen , Donghong Li , Lien-Chang Wang , Lieping Zhong , Tao Pan
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B5/112 , G11B5/1276 , G11B5/1278 , G11B5/3116 , G11B5/315 , G11B5/3153 , G11B5/3163 , H04R31/00 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A method or forming a wrapped-around shielded perpendicular magnetic recording writer pole is disclosed. A structure comprising a leading shield layer and an intermediate layer disposed over the leading shield layer is provided, the intermediate layer comprising a pole material and a dielectric material. A trench is formed in the dielectric material. A non-magnetic layer in the trench is removed via an ion beam etching process. A seed layer is deposited in the trench and over the pole material. A magnetic material comprising a side shield layer is deposited on at least a portion of the seed layer.
摘要翻译：公开了一种方法或形成缠绕的屏蔽垂直磁记录写入极。提供了包括引导屏蔽层和设置在引导屏蔽层之上的中间层的结构，所述中间层包括极材料和电介质材料。在电介质材料中形成沟槽。通过离子束蚀刻工艺去除沟槽中的非磁性层。种子层沉积在沟槽中并在极材料上方。包含侧屏蔽层的磁性材料沉积在籽晶层的至少一部分上。

5. 发明授权

US08104166B1 Self-aligned method for fabricating a high density GMR read element 有权
标题翻译：用于制造高密度GMR读取元件的自对准方法
公开(公告)号：US08104166B1
公开(公告)日：2012-01-31
申请号：US10741857
申请日：2003-12-19
申请人： Jinqiu Zhang , Ming Zhao , Mohamad T. Krounbi , Henry Yuan , Lien-Chang Wang
发明人： Jinqiu Zhang , Ming Zhao , Mohamad T. Krounbi , Henry Yuan , Lien-Chang Wang
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B5/3163 , B82Y25/00 , G01R33/093 , G11B5/398 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A method is provided for fabricating a read element with leads that overlay a top surface of a sensor of the read element. The method includes forming a mask over a sensor layer, then using the mask to define the sensor from the sensor layer. The mask is then narrowed and a lead layer is formed that overlays both ends of the top surface of the sensor without covering a center portion of the top surface.
摘要翻译：提供了一种制造读取元件的方法，该元件具有覆盖读取元件的传感器的顶表面的引线。该方法包括在传感器层上形成掩模，然后使用掩模从传感器层定义传感器。然后使掩模变窄，并且形成覆盖传感器顶表面两端的引线层，而不覆盖顶表面的中心部分。

6. 发明授权

US07420837B2 Method for switching magnetic moment in magnetoresistive random access memory with low current 有权
标题翻译：低电流磁阻随机存取存储器中磁矩切换的方法
公开(公告)号：US07420837B2
公开(公告)日：2008-09-02
申请号：US11338653
申请日：2006-01-25
申请人： Chien-Chung Hung , Ming-Jer Kao , Yuan-Jen Lee , Lien-Chang Wang
发明人： Chien-Chung Hung , Ming-Jer Kao , Yuan-Jen Lee , Lien-Chang Wang
IPC分类号： G11C11/00
CPC分类号： G11C11/1693 , G11C11/1673 , G11C11/1675
摘要： A method for writing a memory cell of a magnetoresistive random access memory (MRAM) device includes, sequentially, providing a first magnetic field in a first direction, providing a second magnetic field in a second direction substantially perpendicular to the first direction, turning off the first magnetic field, providing a third magnetic field in a third direction opposite to the first direction, turning off the second magnetic field, and turning off the third magnetic field. A method for switching magnetic moments in an MRAM memory cell includes providing a magnetic field in a direction forming a blunt angle with a direction of a bias magnetic field. A method for reading an MRAM device includes partially switching magnetic moments in a reference memory cell to generate a reference current; measuring a read current through a memory cell to be read; and comparing the read current with the reference current.
摘要翻译：用于写入磁阻随机存取存储器（MRAM）器件的存储单元的方法包括：依次在第一方向上提供第一磁场，在基本上垂直于第一方向的第二方向上提供第二磁场，第一磁场，在与第一方向相反的第三方向上提供第三磁场，关闭第二磁场，并且关闭第三磁场。用于切换MRAM存储单元中的磁矩的方法包括在与偏置磁场的方向形成钝角的方向上提供磁场。一种用于读取MRAM器件的方法包括部分地转换参考存储器单元中的磁矩以产生参考电流; 测量要读取的存储单元的读取电流; 并将读取的电流与参考电流进行比较。

7. 发明申请

US20070297223A1 Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells having enhanced read and write margins 有权
标题翻译：利用具有增强的读和写余量的这样的单元使用自旋转移和磁存储的磁存储单元的电流驱动切换
公开(公告)号：US20070297223A1
公开(公告)日：2007-12-27
申请号：US11476171
申请日：2006-06-26
申请人： Eugene Youjun Chen , Yiming Huai , Alex Fischer Panchula , Lien-Chang Wang , Xiao Luo
发明人： Eugene Youjun Chen , Yiming Huai , Alex Fischer Panchula , Lien-Chang Wang , Xiao Luo
IPC分类号： G11C11/15
CPC分类号： G11C11/16
摘要： A method and system for providing a magnetic memory is described. The magnetic memory includes magnetic storage cells in an array, bit lines, and source lines. Each magnetic storage cell includes at least one magnetic element. The magnetic element(s) are programmable by write currents driven through the magnetic element(s). Each magnetic element has free and pinned layer(s) and a dominant spacer. The magnetic memory is configured such that either the read current(s) flow from the free layer(s) to the dominant spacer if the maximum low resistance state read current divided by the minimum low resistance state write current is greater than the maximum high resistance state read current divided by the minimum high resistance state write current or the read current(s) flow from the dominant spacer to the free layer(s) if the maximum low resistance state read current divided by the minimum low resistance state write current is less than the maximum high resistance state read current divided by the minimum high resistance state write current.
摘要翻译：描述了一种用于提供磁存储器的方法和系统。磁存储器包括阵列中的磁存储单元，位线和源极线。每个磁存储单元包括至少一个磁性元件。磁性元件可以通过驱动通过磁性元件的写入电流来编程。每个磁性元件具有自由和固定的层和主要间隔物。如果最大低电阻状态读取电流除以最小低电阻状态写入电流除以最大高电阻，则磁存储器被配置为使得读取电流从自由层流向主要间隔物如果最小低电阻状态读取电流除以最小低电阻状态写入电流，则状态读取电流除以最小高电阻状态写入电流或从主要间隔物到自由层的读取电流（s）比最大高电阻状态读取电流除以最小高电阻状态写入电流。

8. 发明申请

US20070279967A1 High density magnetic memory cell layout for spin transfer torque magnetic memories utilizing donut shaped transistors 审中-公开
标题翻译：利用环形晶体管的自旋转移磁存储器的高密度磁存储单元布局
公开(公告)号：US20070279967A1
公开(公告)日：2007-12-06
申请号：US11436446
申请日：2006-05-18
申请人： Xiao Luo , Lien-Chang Wang
发明人： Xiao Luo , Lien-Chang Wang
IPC分类号： H01L29/76 , H01L29/94 , G11C11/00 , G11C11/14 , H01L31/00
CPC分类号： H01L27/228 , G11C11/16 , H01L29/4238
摘要： A method and system for providing and using a magnetic storage cell and magnetic memory is described. The method and system include providing a magnetic element and providing a selection device. The magnetic element is programmable to a first state by a first write current driven through the magnetic element in a first direction and to a second state by a second write current driven through the magnetic element in a second direction. The selection device is connected with the magnetic element. The selection device includes a gate having an aperture therein. The selection device is configured such that the first write current and second write current are provided to the magnetic element across the aperture.
摘要翻译：描述了一种用于提供和使用磁存储单元和磁存储器的方法和系统。该方法和系统包括提供磁性元件并提供选择装置。磁性元件可通过在第一方向通过磁性元件驱动的第一写入电流而被编程为第一状态，并且通过在第二方向上被驱动通过磁性元件的第二写入电流而被编程为第二状态。选择装置与磁性元件连接。选择装置包括其中具有孔的门。选择装置被配置为使得第一写入电流和第二写入电流被提供给穿过该孔的磁性元件。

9. 发明授权

US07208808B2 Magnetic random access memory with lower switching field 失效
标题翻译：具有较低开关电场的磁性随机存取存储器
公开(公告)号：US07208808B2
公开(公告)日：2007-04-24
申请号：US11159137
申请日：2005-06-23
申请人： Yuan-Jen Lee , Yung-Hsiang Chen , Wei-Chuan Chen , Ming-Jer Kao , Lien-Chang Wang
发明人： Yuan-Jen Lee , Yung-Hsiang Chen , Wei-Chuan Chen , Ming-Jer Kao , Lien-Chang Wang
IPC分类号： H01L29/82 , H01L43/00 , H01L27/14 , H01L29/84 , H01L31/111
CPC分类号： G11C11/16 , B82Y25/00 , H01F10/3254 , H01F10/3272 , H01L43/08
摘要： A magnetic random access memory with lower switching field is provided. The memory includes a first antiferromagnetic layer, a pinned layer formed on the first antiferromagnetic layer, a tunnel barrier layer formed on the pinned layer, a ferromagnetic free layer formed on the tunnel barrier layer, and a multi-layered metal layer. The multi-layered metal layer is formed by at least one metal layer, where the direction of the anisotropy axis of the antiferromagnetic layer and the ferromagnetic layer and that of the ferromagnetic free layer are arranged orthogonally. The provided memory has the advantage of lowering the switching field of the ferromagnetic layer, and further lowering the writing current.
摘要翻译：提供具有较低开关电场的磁性随机存取存储器。存储器包括第一反铁磁层，形成在第一反铁磁层上的钉扎层，形成在钉扎层上的隧道势垒层，形成在隧道势垒层上的铁磁自由层，以及多层金属层。多层金属层由至少一个金属层形成，其中反铁磁层和铁磁层的各向异性轴的方向和铁磁性层的各向异性轴的方向被正交布置。提供的存储器具有降低铁磁层的开关场的优点，并进一步降低写入电流。

10. 发明授权

US07187577B1 Method and system for providing current balanced writing for memory cells and magnetic devices 有权
标题翻译：为存储器单元和磁性器件提供电流平衡写入的方法和系统
公开(公告)号：US07187577B1
公开(公告)日：2007-03-06
申请号：US11286083
申请日：2005-11-23
申请人： Lien-Chang Wang , Zhitao Diao , Yunfei Ding
发明人： Lien-Chang Wang , Zhitao Diao , Yunfei Ding
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： A method and system for providing a magnetic memory is included. The method and system include providing at least one magnetic storage cell and at least one dummy resistor coupled with the at least one magnetic storage cell at least for a write operation of the at least one magnetic storage cell. Each of the at least one magnetic storage cell includes a magnetic element and a selection device coupled with the magnetic element. The magnetic element being programmed by a first write current driven through the magnetic element in a first direction and a second write current driven through the magnetic element in a second direction. The selection device is configured to be coupled between the magnetic element and the at least one dummy resistor.
摘要翻译：包括提供磁存储器的方法和系统。该方法和系统包括至少提供至少一个磁存储单元和至少一个与至少一个磁存储单元耦合的虚拟电阻器，用于至少一个磁存储单元的写入操作。所述至少一个磁存储单元中的每一个包括与所述磁性元件耦合的磁性元件和选择装置。磁性元件由第一方向驱动通过磁性元件的第一写入电流和沿着第二方向驱动通过磁性元件的第二写入电流来编程。选择装置被配置为耦合在磁性元件和至少一个虚拟电阻器之间。

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