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1. 发明授权

US08533937B1 Method of forming a fully wrapped-around shielded PMR writer pole 失效
标题翻译：形成完全缠绕屏蔽PMR写入极的方法
公开(公告)号：US08533937B1
公开(公告)日：2013-09-17
申请号：US13275926
申请日：2011-10-18
申请人： Jinwen Wang , Weimin Si , Jianxin Fang , Ying Hong , Hongzhou Jiang , Ching-Huang Lu , Yan Chen , Donghong Li , Lien-Chang Wang , Lieping Zhong , Tao Pan
发明人： Jinwen Wang , Weimin Si , Jianxin Fang , Ying Hong , Hongzhou Jiang , Ching-Huang Lu , Yan Chen , Donghong Li , Lien-Chang Wang , Lieping Zhong , Tao Pan
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B5/112 , G11B5/1276 , G11B5/1278 , G11B5/3116 , G11B5/315 , G11B5/3153 , G11B5/3163 , H04R31/00 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A method or forming a wrapped-around shielded perpendicular magnetic recording writer pole is disclosed. A structure comprising a leading shield layer and an intermediate layer disposed over the leading shield layer is provided, the intermediate layer comprising a pole material and a dielectric material. A trench is formed in the dielectric material. A non-magnetic layer in the trench is removed via an ion beam etching process. A seed layer is deposited in the trench and over the pole material. A magnetic material comprising a side shield layer is deposited on at least a portion of the seed layer.
摘要翻译：公开了一种方法或形成缠绕的屏蔽垂直磁记录写入极。提供了包括引导屏蔽层和设置在引导屏蔽层之上的中间层的结构，所述中间层包括极材料和电介质材料。在电介质材料中形成沟槽。通过离子束蚀刻工艺去除沟槽中的非磁性层。种子层沉积在沟槽中并在极材料上方。包含侧屏蔽层的磁性材料沉积在籽晶层的至少一部分上。

2. 发明授权

US08419954B1 Method for providing a side shield for a magnetic recording transducer 失效
标题翻译：提供用于磁记录传感器的侧屏蔽的方法
公开(公告)号：US08419954B1
公开(公告)日：2013-04-16
申请号：US13285267
申请日：2011-10-31
申请人： Yan Chen , Donghong Li , Lien-Chang Wang
发明人： Yan Chen , Donghong Li , Lien-Chang Wang
IPC分类号： B44C1/22
CPC分类号： G11B5/1278 , G11B5/3116 , G11B5/315 , G11B5/3163 , Y10T29/49048
摘要： A method for fabricating a side shield for a magnetic transducer is described. The transducer has a nonmagnetic layer, a pole, a gap layer between the pole sidewalls and the nonmagnetic layer, and a hard mask having a hard mask aperture. A removal mask having a removal aperture exposing part of the pole and hard mask aperture is provided. The removal mask covers part of the hard mask aperture and the part of the hard mask. A trench in the nonmagnetic layer is formed by removing part of the nonmagnetic layer. A seed layer is deposited. A deposition mask having a deposition aperture therein is provided. The deposition aperture exposes part of the trench and part of the nonmagnetic layer. Side shield material(s) are deposited. Part of the side shield material(s) external to the deposition trench are removed. A remaining portion of the side shield material forms the side shield.
摘要翻译：描述了用于制造用于磁换能器的侧屏蔽的方法。换能器具有非磁性层，极，极侧壁和非磁性层之间的间隙层，以及具有硬掩模孔的硬掩模。提供具有暴露极和硬掩模孔的一部分的去除孔的去除掩模。去除掩模覆盖硬掩模孔的一部分和硬掩模的一部分。通过去除非磁性层的一部分来形成非磁性层中的沟槽。种子层被沉积。提供其中具有沉积孔的沉积掩模。沉积孔暴露了沟槽的一部分和非磁性层的一部分。侧屏蔽材料被沉积。除去沉积沟槽外部的侧面屏蔽材料的一部分。侧屏蔽材料的剩余部分形成侧屏蔽。

3. 发明授权

US08104166B1 Self-aligned method for fabricating a high density GMR read element 有权
标题翻译：用于制造高密度GMR读取元件的自对准方法
公开(公告)号：US08104166B1
公开(公告)日：2012-01-31
申请号：US10741857
申请日：2003-12-19
申请人： Jinqiu Zhang , Ming Zhao , Mohamad T. Krounbi , Henry Yuan , Lien-Chang Wang
发明人： Jinqiu Zhang , Ming Zhao , Mohamad T. Krounbi , Henry Yuan , Lien-Chang Wang
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B5/3163 , B82Y25/00 , G01R33/093 , G11B5/398 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A method is provided for fabricating a read element with leads that overlay a top surface of a sensor of the read element. The method includes forming a mask over a sensor layer, then using the mask to define the sensor from the sensor layer. The mask is then narrowed and a lead layer is formed that overlays both ends of the top surface of the sensor without covering a center portion of the top surface.
摘要翻译：提供了一种制造读取元件的方法，该元件具有覆盖读取元件的传感器的顶表面的引线。该方法包括在传感器层上形成掩模，然后使用掩模从传感器层定义传感器。然后使掩模变窄，并且形成覆盖传感器顶表面两端的引线层，而不覆盖顶表面的中心部分。

4. 发明授权

US07420837B2 Method for switching magnetic moment in magnetoresistive random access memory with low current 有权
标题翻译：低电流磁阻随机存取存储器中磁矩切换的方法
公开(公告)号：US07420837B2
公开(公告)日：2008-09-02
申请号：US11338653
申请日：2006-01-25
申请人： Chien-Chung Hung , Ming-Jer Kao , Yuan-Jen Lee , Lien-Chang Wang
发明人： Chien-Chung Hung , Ming-Jer Kao , Yuan-Jen Lee , Lien-Chang Wang
IPC分类号： G11C11/00
CPC分类号： G11C11/1693 , G11C11/1673 , G11C11/1675
摘要： A method for writing a memory cell of a magnetoresistive random access memory (MRAM) device includes, sequentially, providing a first magnetic field in a first direction, providing a second magnetic field in a second direction substantially perpendicular to the first direction, turning off the first magnetic field, providing a third magnetic field in a third direction opposite to the first direction, turning off the second magnetic field, and turning off the third magnetic field. A method for switching magnetic moments in an MRAM memory cell includes providing a magnetic field in a direction forming a blunt angle with a direction of a bias magnetic field. A method for reading an MRAM device includes partially switching magnetic moments in a reference memory cell to generate a reference current; measuring a read current through a memory cell to be read; and comparing the read current with the reference current.
摘要翻译：用于写入磁阻随机存取存储器（MRAM）器件的存储单元的方法包括：依次在第一方向上提供第一磁场，在基本上垂直于第一方向的第二方向上提供第二磁场，第一磁场，在与第一方向相反的第三方向上提供第三磁场，关闭第二磁场，并且关闭第三磁场。用于切换MRAM存储单元中的磁矩的方法包括在与偏置磁场的方向形成钝角的方向上提供磁场。一种用于读取MRAM器件的方法包括部分地转换参考存储器单元中的磁矩以产生参考电流; 测量要读取的存储单元的读取电流; 并将读取的电流与参考电流进行比较。

5. 发明申请

US20070297223A1 Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells having enhanced read and write margins 有权
标题翻译：利用具有增强的读和写余量的这样的单元使用自旋转移和磁存储的磁存储单元的电流驱动切换
公开(公告)号：US20070297223A1
公开(公告)日：2007-12-27
申请号：US11476171
申请日：2006-06-26
申请人： Eugene Youjun Chen , Yiming Huai , Alex Fischer Panchula , Lien-Chang Wang , Xiao Luo
发明人： Eugene Youjun Chen , Yiming Huai , Alex Fischer Panchula , Lien-Chang Wang , Xiao Luo
IPC分类号： G11C11/15
CPC分类号： G11C11/16
摘要： A method and system for providing a magnetic memory is described. The magnetic memory includes magnetic storage cells in an array, bit lines, and source lines. Each magnetic storage cell includes at least one magnetic element. The magnetic element(s) are programmable by write currents driven through the magnetic element(s). Each magnetic element has free and pinned layer(s) and a dominant spacer. The magnetic memory is configured such that either the read current(s) flow from the free layer(s) to the dominant spacer if the maximum low resistance state read current divided by the minimum low resistance state write current is greater than the maximum high resistance state read current divided by the minimum high resistance state write current or the read current(s) flow from the dominant spacer to the free layer(s) if the maximum low resistance state read current divided by the minimum low resistance state write current is less than the maximum high resistance state read current divided by the minimum high resistance state write current.
摘要翻译：描述了一种用于提供磁存储器的方法和系统。磁存储器包括阵列中的磁存储单元，位线和源极线。每个磁存储单元包括至少一个磁性元件。磁性元件可以通过驱动通过磁性元件的写入电流来编程。每个磁性元件具有自由和固定的层和主要间隔物。如果最大低电阻状态读取电流除以最小低电阻状态写入电流除以最大高电阻，则磁存储器被配置为使得读取电流从自由层流向主要间隔物如果最小低电阻状态读取电流除以最小低电阻状态写入电流，则状态读取电流除以最小高电阻状态写入电流或从主要间隔物到自由层的读取电流（s）比最大高电阻状态读取电流除以最小高电阻状态写入电流。

6. 发明申请

US20070279967A1 High density magnetic memory cell layout for spin transfer torque magnetic memories utilizing donut shaped transistors 审中-公开
标题翻译：利用环形晶体管的自旋转移磁存储器的高密度磁存储单元布局
公开(公告)号：US20070279967A1
公开(公告)日：2007-12-06
申请号：US11436446
申请日：2006-05-18
申请人： Xiao Luo , Lien-Chang Wang
发明人： Xiao Luo , Lien-Chang Wang
IPC分类号： H01L29/76 , H01L29/94 , G11C11/00 , G11C11/14 , H01L31/00
CPC分类号： H01L27/228 , G11C11/16 , H01L29/4238
摘要： A method and system for providing and using a magnetic storage cell and magnetic memory is described. The method and system include providing a magnetic element and providing a selection device. The magnetic element is programmable to a first state by a first write current driven through the magnetic element in a first direction and to a second state by a second write current driven through the magnetic element in a second direction. The selection device is connected with the magnetic element. The selection device includes a gate having an aperture therein. The selection device is configured such that the first write current and second write current are provided to the magnetic element across the aperture.
摘要翻译：描述了一种用于提供和使用磁存储单元和磁存储器的方法和系统。该方法和系统包括提供磁性元件并提供选择装置。磁性元件可通过在第一方向通过磁性元件驱动的第一写入电流而被编程为第一状态，并且通过在第二方向上被驱动通过磁性元件的第二写入电流而被编程为第二状态。选择装置与磁性元件连接。选择装置包括其中具有孔的门。选择装置被配置为使得第一写入电流和第二写入电流被提供给穿过该孔的磁性元件。

7. 发明授权

US07208808B2 Magnetic random access memory with lower switching field 失效
标题翻译：具有较低开关电场的磁性随机存取存储器
公开(公告)号：US07208808B2
公开(公告)日：2007-04-24
申请号：US11159137
申请日：2005-06-23
申请人： Yuan-Jen Lee , Yung-Hsiang Chen , Wei-Chuan Chen , Ming-Jer Kao , Lien-Chang Wang
发明人： Yuan-Jen Lee , Yung-Hsiang Chen , Wei-Chuan Chen , Ming-Jer Kao , Lien-Chang Wang
IPC分类号： H01L29/82 , H01L43/00 , H01L27/14 , H01L29/84 , H01L31/111
CPC分类号： G11C11/16 , B82Y25/00 , H01F10/3254 , H01F10/3272 , H01L43/08
摘要： A magnetic random access memory with lower switching field is provided. The memory includes a first antiferromagnetic layer, a pinned layer formed on the first antiferromagnetic layer, a tunnel barrier layer formed on the pinned layer, a ferromagnetic free layer formed on the tunnel barrier layer, and a multi-layered metal layer. The multi-layered metal layer is formed by at least one metal layer, where the direction of the anisotropy axis of the antiferromagnetic layer and the ferromagnetic layer and that of the ferromagnetic free layer are arranged orthogonally. The provided memory has the advantage of lowering the switching field of the ferromagnetic layer, and further lowering the writing current.
摘要翻译：提供具有较低开关电场的磁性随机存取存储器。存储器包括第一反铁磁层，形成在第一反铁磁层上的钉扎层，形成在钉扎层上的隧道势垒层，形成在隧道势垒层上的铁磁自由层，以及多层金属层。多层金属层由至少一个金属层形成，其中反铁磁层和铁磁层的各向异性轴的方向和铁磁性层的各向异性轴的方向被正交布置。提供的存储器具有降低铁磁层的开关场的优点，并进一步降低写入电流。

8. 发明授权

US07187577B1 Method and system for providing current balanced writing for memory cells and magnetic devices 有权
标题翻译：为存储器单元和磁性器件提供电流平衡写入的方法和系统
公开(公告)号：US07187577B1
公开(公告)日：2007-03-06
申请号：US11286083
申请日：2005-11-23
申请人： Lien-Chang Wang , Zhitao Diao , Yunfei Ding
发明人： Lien-Chang Wang , Zhitao Diao , Yunfei Ding
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： A method and system for providing a magnetic memory is included. The method and system include providing at least one magnetic storage cell and at least one dummy resistor coupled with the at least one magnetic storage cell at least for a write operation of the at least one magnetic storage cell. Each of the at least one magnetic storage cell includes a magnetic element and a selection device coupled with the magnetic element. The magnetic element being programmed by a first write current driven through the magnetic element in a first direction and a second write current driven through the magnetic element in a second direction. The selection device is configured to be coupled between the magnetic element and the at least one dummy resistor.
摘要翻译：包括提供磁存储器的方法和系统。该方法和系统包括至少提供至少一个磁存储单元和至少一个与至少一个磁存储单元耦合的虚拟电阻器，用于至少一个磁存储单元的写入操作。所述至少一个磁存储单元中的每一个包括与所述磁性元件耦合的磁性元件和选择装置。磁性元件由第一方向驱动通过磁性元件的第一写入电流和沿着第二方向驱动通过磁性元件的第二写入电流来编程。选择装置被配置为耦合在磁性元件和至少一个虚拟电阻器之间。

9. 发明申请

US20060039189A1 Magnetic random access memory with tape read line, fabricating method and circuit thereof 审中-公开
标题翻译：具有磁带读取线的磁性随机存取存储器，其制造方法和电路
公开(公告)号：US20060039189A1
公开(公告)日：2006-02-23
申请号：US11033169
申请日：2005-01-12
申请人： Young-Shying Chen , Ming-Jer Kao , Lien-Chang Wang , Chien-Chung Hung , Chi-Ming Chen
发明人： Young-Shying Chen , Ming-Jer Kao , Lien-Chang Wang , Chien-Chung Hung , Chi-Ming Chen
IPC分类号： G11C11/00 , G11C5/06
CPC分类号： G11C11/16
摘要： A magnetic random access memory with tape read line, fabricating method and circuit thereof is provided. The memory is composed of a top write line, a bottom write line which is vertical to the top write line, a MTJ formed on the bottom write line, a spacer formed around the MTJ, and a tape read line formed on the MTJ. The fabricating steps involves forming a bottom write line, forming a MTJ on the bottom write, and forming a tape read line on the MTJ sequentially. In the circuit, the tape read line is either parallel to or vertical to the top write line.
摘要翻译：提供具有磁带读取线的磁性随机存取存储器，其制造方法和电路。存储器由顶部写入线，垂直于顶部写入线的底部写入线，形成在底部写入线上的MTJ，形成在MTJ周围的间隔件和形成在MTJ上的磁带读取线组成。制造步骤包括形成底部写入线，在底部写入上形成MTJ，并且依次在MTJ上形成带读取线。在电路中，磁带读取线与顶部写入线并行或垂直。

10. 发明授权

US06833979B1 Structure and method for redeposition free thin film CPP read sensor fabrication 失效
标题翻译：无沉积薄膜CPP读取传感器制造的结构和方法
公开(公告)号：US06833979B1
公开(公告)日：2004-12-21
申请号：US10176874
申请日：2002-06-21
申请人： Kenneth E. Knapp , Ronald A. Barr , Lien-Chang Wang , Benjamin P. Law , James Spallas
发明人： Kenneth E. Knapp , Ronald A. Barr , Lien-Chang Wang , Benjamin P. Law , James Spallas
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3163 , G11B5/3903 , G11B5/3909 , Y10T29/49032 , Y10T29/49044 , Y10T29/49155
摘要： The present invention provides an improved current perpendicular to the plane thin film read head device and method of fabrication. With the present invention, the lower lead is formed to inhibit accumulation of redeposited lead material on CPP sensor element side walls during CPP sensor formation. In the preferred embodiment, the upper portion of the lower lead, which normally is etched during sensor element formation, is formed of a low sputter yield material to reduce redeposition flux to the sensor side walls. It is also preferred to form the upper portion of a material that also has a low value for the ratio of its sputter yield at the lead milling angle-to-its sputter yield at the side wall milling angle to inhibit redeposition accumulation on the side wall. It is preferred to clad conventional lead material with a low sputter yield ratio, low resistivity material, to inhibit side wall redeposition accumulation while also providing a low resistance lower lead. The underlying lead material may be formed of conventional low resistance lead materials with a cladding of a refractory metal, such as tantalum, titanium, tungsten, molybdenum, zirconium, vanadium, niobium, their alloys, or the like. The improved CPP read head of the present invention may be embodied in a data storage and retrieval apparatus.
摘要翻译：本发明提供一种垂直于平面薄膜读取头装置的改进的电流和制造方法。利用本发明，形成下引线以在CPP传感器形成期间抑制再沉积的铅材料在CPP传感器元件侧壁上的积聚。在优选实施例中，通常在传感器元件形成期间被蚀刻的下引线的上部由低溅射成品材料形成，以减少对传感器侧壁的再沉积通量。还优选形成材料的上部，其在侧铣削角处的铅铣削角与其溅射产率之间的溅射产率的比值也低，以抑制侧壁上的再沉积积聚。优选以低的溅射成品率的低电阻率材料包覆常规的铅材料，以抑制侧壁再沉积积聚，同时还提供低电阻的低铅。下面的铅材料可以由具有诸如钽，钛，钨，钼，锆，钒，铌，它们的合金等的难熔金属包层的常规低电阻引线材料形成。本发明的改进的CPP读取头可以体现在数据存储和检索装置中。

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