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1. 发明申请

US20050274609A1 Composition of matter which results in electronic switching through intra- or inter- molecular charge transfer, or charge transfer between molecules and electrodes induced by an electrical field 审中-公开
标题翻译：导致通过分子内或分子内电荷转移进行电子切换的物质组成，或由电场引起的分子和电极之间的电荷转移
公开(公告)号：US20050274609A1
公开(公告)日：2005-12-15
申请号：US10848772
申请日：2004-05-18
申请人： Yong Chen , Xiao-An Zhang , Alexandre Bratkovski , R. Williams
发明人： Yong Chen , Xiao-An Zhang , Alexandre Bratkovski , R. Williams
IPC分类号： C25C7/02 , G03G9/00 , G11C13/00 , G11C13/02 , H01L51/00
CPC分类号： G11C13/0019 , B82Y10/00 , G11C13/0009 , G11C13/0014 , G11C2213/14 , G11C2213/56 , H01L51/0051 , H01L51/0059 , H01L51/0064 , H01L51/0067 , H01L51/0078 , H01L51/0591 , H01L51/0595
摘要： A composition of matter is provided that results in a change of electrical properties through intra-molecular charge transfer or inter-molecular charge transfer or charge transfer between a molecule and an electrode, wherein the charge transfer is induced by an electric field.
摘要翻译：提供了一种物质组合物，其通过分子内电荷转移或分子间电荷转移或分子和电极之间的电荷转移导致电性能的变化，其中电荷由电场诱导。

2. 发明申请

US20070232738A1 Metamaterials and methods of making the same 有权
标题翻译：超材料和制造方法
公开(公告)号：US20070232738A1
公开(公告)日：2007-10-04
申请号：US11395698
申请日：2006-03-31
申请人： Alexandre Bratkovski , R. Williams
发明人： Alexandre Bratkovski , R. Williams
IPC分类号： B32B27/18 , C08K3/08 , C08K3/04
CPC分类号： G02F1/355 , G02F1/3611 , G02F1/3612 , Y10S977/742 , Y10T428/25 , Y10T428/30 , Y10T428/31504
摘要： A metamaterial includes a non-linear organic material and a plurality of metallic resonators embedded substantially within the non-linear organic material.
摘要翻译：超材料包括非线性有机材料和基本上嵌入在非线性有机材料内的多个金属谐振器。

3. 发明申请

US20070103305A1 Multi-tiered network for gathering detected condition information 有权
标题翻译：用于收集检测到的条件信息的多层网络
公开(公告)号：US20070103305A1
公开(公告)日：2007-05-10
申请号：US11269237
申请日：2005-11-08
申请人： Alexandre Bratkovski , Zhiyong Li , Geoffrey Lyon , Philip Kuekes , Shih Wang , R. Williams
发明人： Alexandre Bratkovski , Zhiyong Li , Geoffrey Lyon , Philip Kuekes , Shih Wang , R. Williams
IPC分类号： G08B13/14 , G08B1/08 , G08B21/00
CPC分类号： G06K7/0008 , H04L67/12
摘要： A multi-tiered network for gathering detected condition information includes a first tier having first tier nodes and a second tier having a second tier node. The second tier node is operable to receive detected condition information from at least one of the first tier nodes in a substantially autonomous manner. In addition, the second tier node is operable to at least one of store, process, and transmit the detected condition information. The network also includes a third tier having a third tier node configured to receive the detected condition information and to at least one of store and process the detected condition information.
摘要翻译：用于收集检测到的条件信息的多层网络包括具有第一层节点的第一层和具有第二层节点的第二层。第二层节点可操作以基本上自主的方式从至少一个第一层节点接收检测到的条件信息。此外，第二层节点可操作以存储，处理和发送检测到的条件信息中的至少一个。网络还包括第三层，其具有被配置为接收检测到的条件信息的第三层节点以及存储和处理检测到的条件信息中的至少一个。

4. 发明申请

US20070236757A1 Rich color image processing method and apparatus 审中-公开
标题翻译：丰富的彩色图像处理方法和装置
公开(公告)号：US20070236757A1
公开(公告)日：2007-10-11
申请号：US11402154
申请日：2006-04-10
申请人： Duncan Stewart , Shih-Yuan Wang , Philip Kuekes , Alexandre Bratkovski , R. Williams
发明人： Duncan Stewart , Shih-Yuan Wang , Philip Kuekes , Alexandre Bratkovski , R. Williams
IPC分类号： H04N1/46
CPC分类号： H04N9/045 , G02B26/001 , H04N5/2254 , H04N9/3108
摘要： Techniques for rich color image processing are disclosed. The techniques include using an array of tunable optical filter elements to define pixels of an image. The tunable optical filter elements are tuned over a range of optical frequencies to control the color filtering of the individual pixels. Exemplary embodiments for image capture and projection are illustrated.
摘要翻译：公开了用于丰富彩色图像处理的技术。这些技术包括使用可调谐光学滤光器元件的阵列来定义图像的像素。可调谐滤光器元件在一定范围的光学频率上被调谐以控制各个像素的滤色。示出了用于图像捕获和投影的示例性实施例。

5. 发明申请

US20070090344A1 Multi-stable molecular device 审中-公开
标题翻译：多稳态分子装置
公开(公告)号：US20070090344A1
公开(公告)日：2007-04-26
申请号：US11256856
申请日：2005-10-24
申请人： R. Williams , Philip Kuekes , Alexandre Bratkovski
发明人： R. Williams , Philip Kuekes , Alexandre Bratkovski
IPC分类号： H01L29/08
CPC分类号： H01L29/0665 , B82Y10/00 , B82Y30/00 , H01L29/0673
摘要： In accordance with the present invention, a molecular device is provided that can act as a finite state machine, such as a logic device or a memory device. The molecular device includes operating molecules having two or more rotors. Each rotor has an electric dipole moment and multiple discrete rotor configurational states. A rotor can be any suitable and effective group that has an electric dipole moment and multiple discrete rotor configurational states. An individual rotor configurational state can be substantially or completely independent of the rotor configurational states of other rotors. The rotor configurational states can be binary. The molecular configurational state of a multi-stable molecule of a device can be ascertained by measuring conductance.
摘要翻译：根据本发明，提供了可以用作有限状态机的分子装置，例如逻辑装置或存储装置。分子装置包括具有两个或更多个转子的操作分子。每个转子具有电偶极矩和多个离散的转子配置状态。转子可以是具有电偶极矩和多个离散转子配置状态的任何合适且有效的组。各个转子结构状态可以基本上或完全独立于其它转子的转子构型状态。转子配置状态可以是二进制的。可以通过测量电导来确定器件的多稳态分子的分子结构状态。

6. 发明申请

US20070066070A1 Apparatus for imprinting lithography and fabrication thereof 失效
标题翻译：用于压印光刻及其制造的装置
公开(公告)号：US20070066070A1
公开(公告)日：2007-03-22
申请号：US11601084
申请日：2006-11-16
申请人： M. Islam , Gun Jung , Yong Chen , R. Williams
发明人： M. Islam , Gun Jung , Yong Chen , R. Williams
IPC分类号： H01L21/465
CPC分类号： H01L21/76838 , H01L21/0337
摘要： An imprinting apparatus and method of fabrication provide a mold having a pattern for imprinting. The apparatus includes a semiconductor substrate polished in a [110] direction. The semiconductor substrate has a (110) horizontal planar surface and vertical sidewalls of a wet chemical etched trench. The sidewalls are aligned with and therefore are (111) vertical lattice planes of the semiconductor substrate. The semiconductor substrate includes a plurality of vertical structures between the sidewalls, wherein the vertical structures may be nano-scale spaced apart. The method includes wet etching a trench with spaced apart (111) vertical sidewalls in an exposed portion of the (110) horizontal surface of the semiconductor substrate along (111) vertical lattice planes. A chemical etching solution is used that etches the (111) vertical lattice planes slower than the (110) horizontal lattice plane. The method further includes forming the imprinting mold.
摘要翻译：压印装置和制造方法提供具有用于压印的图案的模具。该装置包括沿[110]方向抛光的半导体衬底。半导体衬底具有（110）水平平面和湿化学蚀刻沟槽的垂直侧壁。侧壁与半导体衬底对准并且因此是（111）垂直的晶格面。半导体衬底包括在侧壁之间的多个垂直结构，其中垂直结构可以是纳米级隔开的。该方法包括在（111）垂直晶格面的半导体衬底的（110）水平表面的暴露部分中湿式蚀刻具有间隔开（111）垂直侧壁的沟槽。使用蚀刻比（110）水平晶格面慢的（111）垂直晶格面的化学蚀刻溶液。该方法还包括形成压印模具。

7. 发明申请

US20060012079A1 Formation of a self-assembled release monolayer in the vapor phase 审中-公开
标题翻译：在气相中形成自组装释放单层
公开(公告)号：US20060012079A1
公开(公告)日：2006-01-19
申请号：US10893082
申请日：2004-07-16
申请人： Gun-Young Jung , Yong Chen , R. Williams , Sivapackia Ganapathiappan
发明人： Gun-Young Jung , Yong Chen , R. Williams , Sivapackia Ganapathiappan
IPC分类号： B28B7/36 , B29C33/58
CPC分类号： G03F7/0002 , B29C33/58 , B82Y10/00 , B82Y30/00 , B82Y40/00
摘要： A method is provided for coating a surface having features thereon with a self-assembled monolayer for aiding release of the surface during an imprinting procedure. The method comprises exposing the surface to a vapor of a mold release agent.
摘要翻译：提供了一种用于在其上具有特征的表面用自组装单层涂覆以便在印刷过程期间帮助释放表面的方法。该方法包括将表面暴露于脱模剂的蒸气。

8. 发明申请

US20060180480A1 E-field induced ion selective molecular deposition onto sensor arrays 失效
标题翻译：电场诱导离子选择性分子沉积到传感器阵列上
公开(公告)号：US20060180480A1
公开(公告)日：2006-08-17
申请号：US11059258
申请日：2005-02-15
申请人： Sean Zhang , Zhiyong Li , Zhang-Lin Zhou , William Tong , R. Williams , Yong Chen
发明人： Sean Zhang , Zhiyong Li , Zhang-Lin Zhou , William Tong , R. Williams , Yong Chen
IPC分类号： G01F1/64 , G01N33/487 , G01N27/26
CPC分类号： G01N33/5308 , G01N33/5438 , G01N2430/00
摘要： A sensor array for sensing at least one of chemical moieties and biological moieties is provided. The sensor array comprises a plurality of working electrodes electrically associated with a reference electrode, each working electrode in combination with the reference electrode forming a transducer. Each working electrode is provided with a coating of a sensing element comprised of an ionizable moiety and a functional group sensitive to one of the chemical and/or biological moieties.
摘要翻译：提供了用于感测化学部分和生物部分中的至少一个的传感器阵列。传感器阵列包括与参考电极电连接的多个工作电极，每个工作电极与参考电极组合形成换能器。每个工作电极设置有由可电离部分和对化学和/或生物部分之一敏感的官能团组成的感测元件的涂层。

9. 发明申请

US20060006463A1 Nanowire device with (111) vertical sidewalls and method of fabrication 失效
标题翻译：具有（111）垂直侧壁的纳米线器件和制造方法
公开(公告)号：US20060006463A1
公开(公告)日：2006-01-12
申请号：US10888628
申请日：2004-07-09
申请人： M. Islam , Yong Chen , Shih-Yuan Wang , R. Williams
发明人： M. Islam , Yong Chen , Shih-Yuan Wang , R. Williams
IPC分类号： H01L27/01 , H01L21/00
CPC分类号： H01L27/1203 , B82Y10/00 , G11C2213/81 , H01L29/045 , H01L29/0665 , H01L29/0673 , H01L29/861
摘要： A nano-scale device and method of fabrication provide a nanowire having (111) vertical sidewalls. The nano-scale device includes a semiconductor-on-insulator substrate polished in a [110] direction, the nanowire, and an electrical contact at opposite ends of the nanowire. The method includes wet etching a semiconductor layer of the semiconductor-on-insulator substrate to form the nanowire extending between a pair of islands in the semiconductor layer. The method further includes depositing an electrically conductive material on the pair of islands to form the electrical contacts. A nano-pn diode includes the nanowire as a first nano-electrode, a pn-junction vertically stacked on the nanowire, and a second nano-electrode on a (110) horizontal planar end of the pn-junction. The nano-pn diode may be fabricated in an array of the diodes on the semiconductor-on-insulator substrate.
摘要翻译：纳米级器件和制造方法提供具有（111）垂直侧壁的纳米线。纳米级器件包括在[110]方向上抛光的绝缘体上半导体衬底，纳米线和在纳米线的相对端的电接触。该方法包括湿式蚀刻绝缘体上半导体衬底的半导体层，以形成在半导体层中的一对岛之间延伸的纳米线。该方法还包括在一对岛上沉积导电材料以形成电触头。纳米pn二极管包括纳米线作为第一纳米电极，垂直堆叠在纳米线上的pn结，以及在pn结的（110）水平平面端上的第二纳米电极。可以在绝缘体上半导体衬底上的二极管的阵列中制造纳米pn二极管。

10. 发明申请

US20050093025A1 Method for making nanoscale wires and gaps for switches and transistors 失效
标题翻译：用于制造开关和晶体管的纳米线和间隙的方法
公开(公告)号：US20050093025A1
公开(公告)日：2005-05-05
申请号：US10923199
申请日：2004-08-20
申请人： Yong Chen , R. Williams
发明人： Yong Chen , R. Williams
IPC分类号： B82B3/00 , G11C13/00 , H01L21/00 , H01L21/20 , H01L21/28 , H01L21/3065 , H01L21/308 , H01L21/3213 , H01L21/335 , H01L21/336 , H01L21/44 , H01L21/82 , H01L27/10 , H01L29/06 , H01L29/423 , H01L29/76 , H01L29/775 , H01L29/786 , H01L29/94 , H01L31/0328 , H01L31/113
CPC分类号： H01L21/3081 , B82Y10/00 , G11C2213/81 , H01L21/3083 , H01L29/0665 , H01L29/0673 , H01L29/42312 , H01L29/66439 , Y10S438/945 , Y10S438/962 , Y10S977/888
摘要： A method for forming first and second linear structures of a first composition that meet at right angles, there being a gap at the point at which the structures meet. The linear structures are constructed on an etchable crystalline layer having the first composition. First and second self-aligned nanowires of a second composition are grown on this layer and used as masks for etching the layer. The self-aligned nanowires are constructed from a material that has an asymmetric lattice mismatch with respect to the crystalline layer. The gap is sufficiently small to allow one of the structures to act as the gate of a transistor and the other to form the source and drain of the transistor. The gap can be filled with electrically switchable materials thereby converting the transistor to a memory cell.
摘要翻译：一种用于形成第一组合物的第一和第二线性结构的方法，所述第一和第二线性结构垂直相交，在所述结构相交点处存在间隙。线性结构构造在具有第一组成的可蚀刻晶体层上。在该层上生长第二组合物的第一和第二自对准纳米线，并用作蚀刻该层的掩模。自对准纳米线由相对于晶体层具有不对称晶格失配的材料构成。该间隙足够小以允许一个结构用作晶体管的栅极，而另一个则形成晶体管的源极和漏极。间隙可以用电可切换材料填充，从而将晶体管转换成存储单元。

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