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    • 2. 发明授权
    • Nanostructure array substrate, method for fabricating the same and dye-sensitized solar cell using the same
    • 纳米结构阵列基板,其制造方法和使用其的染料敏化太阳能电池
    • US08877542B2
    • 2014-11-04
    • US13325505
    • 2011-12-14
    • Gun Young JungHui SongKi Seok Kim
    • Gun Young JungHui SongKi Seok Kim
    • H01L31/18H01M14/00H01G9/20
    • H01M14/005H01G9/2031H01G9/2036H01G9/204Y02E10/542
    • Disclosed are a nanostructure array substrate, a method for fabricating the same, and a dye-sensitized solar cell by using the same. The nanostructure array substrate includes a plurality of metal oxide nanostructures vertically aligned on the substrate while being separated from each other. The metal oxide nanostructures include nanorods having a ZnO core/TiO2 shell structure or TiO2 nanotubes. The method includes the steps of forming ZnO nanorods vertically aligned from a seed layer formed on a substrate; and coating a TiO2 sol on the ZnO nanorods and sintering the ZnO nanorods to form nanorods having a ZnO core/TiO2 shell structure. The transparency and flexibility of the substrate are ensured. The photoelectric conversion efficiency of the solar cell is improved if the nanostructure array substrate is employed in the photo electrode of the dye-sensitized solar cell.
    • 公开了纳米结构阵列基板,其制造方法和使用该染料敏化太阳能电池的染料敏化太阳能电池。 纳米结构阵列衬底包括在衬底上垂直对准的多个金属氧化物纳米结构,同时彼此分离。 金属氧化物纳米结构包括具有ZnO核/ TiO 2壳结构或TiO 2纳米管的纳米棒。 该方法包括以下步骤:从形成在衬底上的晶种层垂直取向的ZnO纳米棒; 并在ZnO纳米棒上涂覆TiO 2溶胶并烧结ZnO纳米棒以形成具有ZnO核/ TiO2壳结构的纳米棒。 确保了基材的透明性和柔韧性。 如果在染料敏化太阳能电池的光电极中使用纳米结构阵列基板,则太阳能电池的光电转换效率得到改善。
    • 8. 发明授权
    • Apparatus for imprinting lithography and fabrication thereof
    • 用于压印光刻及其制造的装置
    • US07141866B1
    • 2006-11-28
    • US10826056
    • 2004-04-16
    • M. Saif IslamGun Young JungYong ChenR. Stanley Williams
    • M. Saif IslamGun Young JungYong ChenR. Stanley Williams
    • H01L29/04H01L31/036
    • H01L21/76838H01L21/0337
    • An imprinting apparatus and method of fabrication provide a mold having a pattern for imprinting. The apparatus includes a semiconductor substrate polished in a [110] direction. The semiconductor substrate has a (110) horizontal planar surface and vertical sidewalls of a wet chemical etched trench. The sidewalls are aligned with and therefore are (111) vertical lattice planes of the semiconductor substrate. The semiconductor substrate includes a plurality of vertical structures between the sidewalls, wherein the vertical structures may be nano-scale spaced apart. The method includes wet etching a trench with spaced apart (111) vertical sidewalls in an exposed portion of the (110) horizontal surface of the semiconductor substrate along (111) vertical lattice planes. A chemical etching solution is used that etches the (111) vertical lattice planes slower than the (110) horizontal lattice plane. The method further includes forming the imprinting mold.
    • 压印装置和制造方法提供具有用于压印的图案的模具。 该装置包括沿[110]方向抛光的半导体衬底。 半导体衬底具有(110)水平平面和湿化学蚀刻沟槽的垂直侧壁。 侧壁与半导体衬底对准并且因此是(111)垂直的晶格面。 半导体衬底包括在侧壁之间的多个垂直结构,其中垂直结构可以是纳米级隔开的。 该方法包括在(111)垂直晶格面的半导体衬底的(110)水平表面的暴露部分中湿式蚀刻具有间隔开(111)垂直侧壁的沟槽。 使用蚀刻比(110)水平晶格面慢的(111)垂直晶格面的化学蚀刻溶液。 该方法还包括形成压印模具。
    • 9. 发明申请
    • Hardened nano-imprinting stamp
    • 硬化纳米印记邮票
    • US20050150404A1
    • 2005-07-14
    • US11065171
    • 2005-02-23
    • Heon LeeGun-Young Jung
    • Heon LeeGun-Young Jung
    • B82B3/00B81C1/00G03F7/00H01L21/027B41K1/42
    • B82Y10/00B81C99/009B82Y40/00G03F7/0002G03F7/0017Y10T428/24355
    • A hardened nano-imprinting stamp and a method of forming a hardened nano-imprinting stamp are disclosed. The hardened nano-imprinting stamp includes a plurality of silicon-based nano-sized features that have an hardened shell of silicon carbide, silicon nitride, or silicon carbide nitride. The hardened shell is made harder than the underlying silicon by a plasma carburization and/or a plasma nitridation process. During the plasma process atoms of carbon and/or nitrogen bombard and penetrate a plurality of exposed surfaces of the nano-sized features and chemically react with the silicon to form the hardened shell of silicon carbide, silicon nitride, or silicon carbide nitride. The lifetime, durability, economy, and accuracy of the resulting hardened nano-imprinting stamp are improved.
    • 公开了一种硬化的纳米压印印模和形成硬化的纳米压印印模的方法。 硬化的纳米压印印模包括多个硅基纳米尺寸特征,其具有碳化硅,氮化硅或碳化硅氮化物的硬化壳。 通过等离子体渗碳和/或等离子体氮化处理使硬化的壳比下面的硅更硬。 在等离子体工艺期间,碳和/或氮原子轰击并穿透纳米尺寸特征的多个暴露表面并与硅发生化学反应以形成碳化硅,氮化硅或碳化硅氮化物的硬化壳。 提高了所得到的硬化纳米压印印模的寿命,耐久性,经济性和精度。