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1. 发明授权

US5379150A Method of manufacturing a spatial frequency filter for use in a pattern defect detection device 失效
标题翻译：制造用于图案缺陷检测装置的空间频率滤波器的方法
公开(公告)号：US5379150A
公开(公告)日：1995-01-03
申请号：US176571
申请日：1993-12-30
申请人： Yoko Miyazaki , Toshimasa Tomoda , Hitoshi Tanaka , Nobuyuki Kosaka , Toyomi Ohshige
发明人： Yoko Miyazaki , Toshimasa Tomoda , Hitoshi Tanaka , Nobuyuki Kosaka , Toyomi Ohshige
IPC分类号： G01B11/24 , G01N21/88 , G01N21/94 , G01N21/956 , G06K9/74 , H01L21/66 , G02B27/46 , G01B9/00
CPC分类号： G06K9/74 , G01N21/95623
摘要： A spatial frequency filter used in a pattern defect detection device, including a pattern which includes a black spot having a diameter expanded by a controlled amount in comparison with the diameter of a black spot on a photosensitive plate obtained by exposure by diffracted light from a pattern on a model specimen.
摘要翻译：一种在图案缺陷检测装置中使用的空间频率滤波器，包括图案，该图形包括直径扩大了受控量的黑点，与通过衍射光从图案曝光获得的感光片上的黑点的直径相比较在模型标本上。

2. 发明授权

US5289260A Pattern defect detection device and a spatial frequency filter used therein 失效
标题翻译：图案缺陷检测装置及其中使用的空间频率滤波器
公开(公告)号：US5289260A
公开(公告)日：1994-02-22
申请号：US787929
申请日：1991-11-06
申请人： Yoko Miyazaki , Toshimasa Tomoda , Hitoshi Tanaka , Nobuyuki Kosaka , Toyomi Ohshige
发明人： Yoko Miyazaki , Toshimasa Tomoda , Hitoshi Tanaka , Nobuyuki Kosaka , Toyomi Ohshige
IPC分类号： G01B11/24 , G01N21/88 , G01N21/94 , G01N21/956 , G06K9/74 , H01L21/66 , G01B9/02
CPC分类号： G06K9/74 , G01N21/95623
摘要： A spatial frequency filter used in a pattern defect detection device, including a pattern which includes a black spot having a diameter expanded by a controlled amount in comparison with the diameter of a black spot on a photosensitive plate obtained by exposure by diffracted light from a pattern on a model specimen
摘要翻译：一种在图案缺陷检测装置中使用的空间频率滤波器，包括图案，该图形包括直径扩大了受控量的黑点，与通过衍射光从图案曝光获得的感光片上的黑点的直径相比较在模型标本上

3. 发明授权

US5170063A Inspection device for detecting defects in a periodic pattern on a semiconductor wafer 失效
标题翻译：用于检测半导体晶片周期性图案中的缺陷的检查装置
公开(公告)号：US5170063A
公开(公告)日：1992-12-08
申请号：US661140
申请日：1991-02-27
申请人： Yoko Miyazaki , Hitoshi Tanaka , Nobuyuki Kosaka , Toshimasa Tomoda
发明人： Yoko Miyazaki , Hitoshi Tanaka , Nobuyuki Kosaka , Toshimasa Tomoda
IPC分类号： G01N21/88 , G01N21/956 , G03H1/00 , G06T1/00
CPC分类号： G01N21/95623 , G03H1/00
摘要： An inspection device for detecting defects in a periodic pattern on a semiconductor wafer includes a laser oscillator. In the exposure process, light emitted from the laser oscillator is divided into a subject beam and a reference beam. The subject beam is guided to a semiconductor wafer having a periodic pattern thereon by mirrors and a beam expander. The light scattered from the specimen is collected by a lens on a photographic plate. The reference beam is guided to the photographic plate via a second beam expander and another mirror. The intensity of the reference beam is adjusted to a level at which the reference beams interferes on the photographic plate with the light scattered from defects in the periodic pattern and collected by the lens. Thus, a hologram of the defects in the pattern is recorded on the photographic plate. After development, the photographic plate is returned to its original position and used to form a holographic image of the defects with a transmitted regeneration light beam.
摘要翻译：用于检测半导体晶片周期性图案中的缺陷的检查装置包括激光振荡器。在曝光过程中，从激光振荡器发射的光被分成目标光束和参考光束。目标光束通过反射镜和光束扩展器被引导到其上具有周期性图案的半导体晶片。从样本散射的光由照相板上的透镜收集。参考光束通过第二光束扩展器和另一个反射镜被引导到照相板。参考光束的强度被调整到参考光束干涉照相板的水平，其中光从周期性图案中的缺陷散射并由透镜收集。因此，图案上的缺陷的全息图被记录在照相板上。在显影之后，照相板返回其原始位置，并用于通过发射的再生光束形成缺陷的全息图像。

4. 发明授权

US5008558A System for detecting minute particles on or above a substrate 失效
标题翻译：用于检测基板上或上方的微小颗粒的系统
公开(公告)号：US5008558A
公开(公告)日：1991-04-16
申请号：US373801
申请日：1989-06-29
申请人： Masao Koshinaka , Minoru Akiyama , Hitoshi Tanaka , Toshimasa Tomoda
发明人： Masao Koshinaka , Minoru Akiyama , Hitoshi Tanaka , Toshimasa Tomoda
IPC分类号： G01N21/88 , G01N15/02 , G01N15/14 , G01N21/89 , G01N21/94 , G01N21/95 , G01N21/956 , H01L21/66
CPC分类号： G01N21/94 , G01N2015/0238 , G01N2021/8909 , G01N2021/945 , G01N21/9501
摘要： A fine-particle measuring apparatus designed to measure fine particles attached to the surface of a substrate for a semiconductor device set in a processing unit for formation of films, etching, cleaning, etc. and fine particles suspended in the space above the substrate surface by the use of scattering of a laser beam caused by these fine particles. The measuring apparatus comprises a laser beam scanning mechanism for irradiating a measuring space with a laser beam the angular position of which is minutely modulated at a predetermined frequency, a photodetector which receives light scattered by a fine particle and converts the received light into an electrical signal, and a signal processor which extracts from the electrical signal output by the photodetector a signal component whose frequency is the same as or double that of a modulating signal for the minute scanning with the laser beam and which has a constant phase difference in terms of time with respect to the modulating signal. Thus, it is possible to measure fine particles with high sensitivity without substantially disturbing the environment inside the process unit or the process itself.
摘要翻译：一种微粒测量装置，被设计用于测量附着在用于形成膜，蚀刻，清洁等的处理单元中的用于半导体器件的基板的表面的细颗粒，以及悬浮在基板表面上方的空间中的细颗粒使用由这些细颗粒引起的激光束的散射。该测量装置包括：激光束扫描机构，用于以预定频率微调其角度位置的激光束照射测量空间;光电检测器，其接收由微粒散射的光并将接收的光转换成电信号以及信号处理器，其从由光电检测器输出的电信号中提取频率与用于用激光束进行微小扫描的调制信号的频率相同或者是两倍的信号分量，并且其在时间上具有恒定的相位差相对于调制信号。因此，可以以高灵敏度测量细颗粒，而基本上不会干扰处理单元内的环境或过程本身。

5. 发明授权

US5481095A Code reading pattern and an image pickup apparatus for reading the pattern 失效
标题翻译：代码读取图案和用于读取图案的图像拾取装置
公开(公告)号：US5481095A
公开(公告)日：1996-01-02
申请号：US293741
申请日：1994-08-22
申请人： Hiroshi Mitsuda , Masahiko Sakamoto , Hitoshi Tanaka , Nobuyuki Kosaka , Yoshinori Ito
发明人： Hiroshi Mitsuda , Masahiko Sakamoto , Hitoshi Tanaka , Nobuyuki Kosaka , Yoshinori Ito
IPC分类号： G06K7/10 , G06K9/20 , G06K19/06 , H04N7/18
CPC分类号： G06K9/2036
摘要： A code reading pattern and an image pickup apparatus are provided for reading a symbol representing significant information, the symbol encoded by the pattern. The code reading pattern is formed by repeated markings of constant pitch on the surface of an object. The markings define area having at least one boundary, the at least one boundary defining an outline of the symbol. The apparatus includes a lighting system for illuminating the code reading pattern with parallel light, an imaging system for imaging light reflected from the pattern, a spatial frequency filtering system, located at the near back focal plane of the imaging system, for blocking regular reflected light and for transmiting diffracted light to project an image of the symbol, and a receiver for receiving the image.
摘要翻译：提供代码读取模式和图像拾取装置，用于读取表示重要信息的符号，即由模式编码的符号。代码读取图案通过在物体表面上的恒定间距的重复标记形成。标记定义具有至少一个边界的区域，所述至少一个边界限定符号的轮廓。该装置包括用于用平行光照亮代码读取模式的照明系统，用于对从图案反射的光成像的成像系统，位于成像系统的近后焦平面处的空间频率滤波系统，用于阻挡常规的反射光并且用于发射衍射光以投影符号的图像，以及用于接收图像的接收器。

6. 发明授权

US08633758B2 Semiconductor device having boosting circuit 失效
标题翻译：具有升压电路的半导体装置
公开(公告)号：US08633758B2
公开(公告)日：2014-01-21
申请号：US13064237
申请日：2011-03-11
申请人： Hiroki Fujisawa , Shuichi Kubouchi , Hitoshi Tanaka
发明人： Hiroki Fujisawa , Shuichi Kubouchi , Hitoshi Tanaka
IPC分类号： G05F1/10 , G05F3/02
CPC分类号： G05F1/46 , G11C5/145 , H02M1/15 , H02M3/07 , H02M2001/0045
摘要： A semiconductor device includes a boosting circuit that boosts an internal power supply voltage in a boosting range according to an external power supply voltage, an external voltage-level comparison circuit that compares the external power supply voltage and a predetermined reference voltage, and a variable resistor circuit that includes a variable resistor connected to an output terminal of the boosting circuit. The variable resistor circuit controls a resistance value of the variable resistor based on a comparison result of the external voltage-level comparison circuit.
摘要翻译：一种半导体器件包括：升压电路，其根据外部电源电压升压升压范围内的内部电源电压;将外部电源电压与规定的基准电压进行比较的外部电压电平比较电路;以及可变电阻器电路包括连接到升压电路的输出端子的可变电阻器。可变电阻电路基于外部电压电平比较电路的比较结果来控制可变电阻器的电阻值。

7. 发明授权

US08620564B2 Abnormality detection apparatus and abnormality detection method for multi-cylinder internal combustion engine 有权
标题翻译：多气缸内燃机异常检测装置及异常检测方法
公开(公告)号：US08620564B2
公开(公告)日：2013-12-31
申请号：US13480921
申请日：2012-05-25
申请人： Masashi Hakariya , Isao Nakajima , Yoshihisa Oda , Hitoshi Tanaka , Kiyotaka Kushihama , Shota Kitano , Kazuyuki Noda , Katsumi Adachi , Yuichi Kohara , Akihiro Katayama
发明人： Masashi Hakariya , Isao Nakajima , Yoshihisa Oda , Hitoshi Tanaka , Kiyotaka Kushihama , Shota Kitano , Kazuyuki Noda , Katsumi Adachi , Yuichi Kohara , Akihiro Katayama
IPC分类号： B60T7/12 , G05D1/00 , G06F7/00 , G06F17/00
CPC分类号： F02D41/1498 , F02D41/0085 , F02D41/1495 , F02D41/22 , F02D41/3076
摘要： An abnormality detection apparatus for a multi-cylinder internal combustion engine changes a fuel injection quantity of a predetermined target cylinder to detect an abnormality of an internal combustion engine based on values of rotational variations relating to the target cylinder detected before and after the change of the fuel injection quantity. The abnormality detection apparatus corrects the values of the rotational variations relating to the target cylinder detected before and after the change of the fuel injection quantity based on at least one of the number of revolutions of the engine and an engine load at a corresponding detection time.
摘要翻译：用于多气缸内燃机的异常检测装置根据与在目标气缸的变化之前和之后检测到的目标气缸相关的旋转变化的值来改变预定目标气缸的燃料喷射量以检测内燃机的异常燃油喷射量。异常检测装置在相应的检测时间的基础上，基于发动机的转数和发动机负荷中的至少一方来校正与燃料喷射量的变化前后检测到的目标气缸的旋转变动的值。

8. 发明授权

US08493132B2 Supply voltage generating circuit 有权
公开(公告)号：US08493132B2
公开(公告)日：2013-07-23
申请号：US12052422
申请日：2008-03-20
申请人： Koichiro Hayashi , Hitoshi Tanaka
发明人： Koichiro Hayashi , Hitoshi Tanaka
IPC分类号： G05F1/10
CPC分类号： G05F3/02 , G05F1/62 , G11C5/145 , G11C11/4074 , H02M3/07
摘要： A supply voltage generating circuit that enables a reduction in chip area includes: a booster for outputting a boosted voltage upon generating the boosted voltage by charge pumping of a capacitor element; a power-supply step-down unit for stepping down voltage of an external power supply to a voltage within a breakdown-voltage range of the capacitor element, and applying the stepped-down voltage to the power supply of the booster; and a switch element for switching between application of the external power supply to the power supply of the booster directly or via the power-supply step-down unit. The booster comprises multiple stages of booster circuits. The thicknesses of gate oxide films of capacitor elements constituted by MOS transistors included in respective ones of the booster circuits are the same and are made smaller than the thickness of a gate oxide film of a MOS transistor included in a load circuit having the output of the booster at its power supply.

9. 发明授权

US08471673B2 Varistor and method for manufacturing varistor 有权
标题翻译：压敏电阻及其制造方法
公开(公告)号：US08471673B2
公开(公告)日：2013-06-25
申请号：US13545505
申请日：2012-07-10
申请人： Hitoshi Tanaka , Katsunari Moriai , Takahiro Itami
发明人： Hitoshi Tanaka , Katsunari Moriai , Takahiro Itami
IPC分类号： H01C7/10
CPC分类号： H01C1/14 , H01C7/00 , H01C7/10 , H01C17/28 , Y10T29/49082 , Y10T29/49085
摘要： A varistor is provided with a varistor element body, a plurality of internal electrodes arranged in the varistor element body so as to sandwich a partial region of the varistor element body between them, and a plurality of external electrodes arranged on the surface of the varistor element body and connected to the corresponding internal electrodes. The external electrode has a sintered electrode layer formed by attaching an electroconductive paste containing an alkali metal to the surface of the varistor element body and sintering it. The varistor element body has a high-resistance region formed by diffusing the alkali metal in the electroconductive paste into the varistor element body from an interface between the surface of the varistor element body and the sintered electrode layer.
摘要翻译：变阻器设置有可变电阻元件主体，多个内部电极，布置在可变电阻元件主体中，以将可变电阻元件主体的局部区域夹在它们之间;以及多个外部电极，布置在可变电阻元件的表面上并连接到相应的内部电极。外部电极具有烧结电极层，该烧结电极层通过将含有碱金属的导电膏附着到可变电阻元件体的表面并烧结而形成。可变电阻元件体具有通过将可变电阻元件体的表面与烧结电极层之间的界面将导电浆中的碱金属扩散到可变电阻元件体中而形成的高电阻区域。

10. 发明申请

US20100164607A1 SEMICONDUCTOR DEVICE THAT CAN ADJUST SUBSTRATE VOLTAGE 有权
标题翻译：可调节基极电压的半导体器件
公开(公告)号：US20100164607A1
公开(公告)日：2010-07-01
申请号：US12647259
申请日：2009-12-24
申请人： Shinichi Miyatake , Seiji Narui , Hitoshi Tanaka
发明人： Shinichi Miyatake , Seiji Narui , Hitoshi Tanaka
IPC分类号： G05F1/10
CPC分类号： G05F3/205 , G05F1/46
摘要： To provide a semiconductor device including: a MOS transistor formed in a semiconductor substrate and have a threshold voltage to be adjusted, a replica transistor of the MOS transistor, a monitoring circuit monitors a gate/source voltage needed when the replica transistor flows a current having a given designed value, a negative voltage pumping circuit generates a substrate voltage of the MOS transistor, based on an output from the monitoring circuit, and a limiting circuit defines the operation of the negative voltage pumping circuit, regardless of a monitoring result of the monitoring circuit, in response to an excess of the substrate voltage with respect to a predetermined value.
摘要翻译：为了提供一种半导体器件，包括：形成在半导体衬底中并具有要调节的阈值电压的MOS晶体管，MOS晶体管的复制晶体管，监视电路监视当复制晶体管流过具有给定的设计值，负电压泵浦电路基于监控电路的输出产生MOS晶体管的衬底电压，并且限制电路定义负电压抽运电路的操作，而不管监视的监视结果如何电路，响应于相对于预定值的衬底电压的过量。

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