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1. 发明授权

US06703316B2 Method and system for processing substrate 有权
标题翻译：基板处理方法及系统
公开(公告)号：US06703316B2
公开(公告)日：2004-03-09
申请号：US10132212
申请日：2002-04-26
申请人： Yoichi Inoue , Yoshihiko Sakashita , Katsumi Watanabe , Nobuyuki Kawakami , Takahiko Ishii , Yusuke Muraoka , Kimitsugu Saito , Tomomi Iwata , Ikuo Mizobata , Takashi Miyake , Ryuji Kitakado
发明人： Yoichi Inoue , Yoshihiko Sakashita , Katsumi Watanabe , Nobuyuki Kawakami , Takahiko Ishii , Yusuke Muraoka , Kimitsugu Saito , Tomomi Iwata , Ikuo Mizobata , Takashi Miyake , Ryuji Kitakado
IPC分类号： H01L21302
CPC分类号： H01L21/02052 , H01L21/67028
摘要： A method and system for processing a substrate includes performing a wet process by supplying a working liquid to a substrate in a wet processing apparatus, transferring the substrate in a non-dry state from the wet processing apparatus to a drying apparatus, and subjecting the substrate to a supercritical drying by a supercritical fluid in the drying apparatus.
摘要翻译：用于处理衬底的方法和系统包括通过在湿法处理设备中将工作液体供应到衬底来进行湿法处理，将非干燥状态的衬底从湿法处理设备转移到干燥设备，并对衬底在干燥装置中通过超临界流体进行超临界干燥。

2. 发明申请

US20100295053A1 THIN FILM TRANSISTOR SUBSTRATE AND DISPLAY DEVICE 有权
标题翻译：薄膜晶体管基板和显示器件
公开(公告)号：US20100295053A1
公开(公告)日：2010-11-25
申请号：US12812913
申请日：2009-01-15
申请人： Mototaka Ochi , Nobuyuki Kawakami , Katsufumi Tomihisa , Hiroshi Goto
发明人： Mototaka Ochi , Nobuyuki Kawakami , Katsufumi Tomihisa , Hiroshi Goto
IPC分类号： H01L33/00 , H01L29/786
CPC分类号： H01L29/458
摘要： The present invention provides a thin film transistor substrate and a display device in which a decrease in the dry etching rate of a source electrode and drain electrode is not caused; no etching residues are generated; and a barrier metal can be eliminated between a semiconductor layer and metal wires such as the source and drain electrodes. The present invention is a thin film transistor substrate having a semiconductor layer 1, a source electrode 2, a drain electrode 3, and a transparent conductive film 4, in which the source electrode 2 and drain electrode 3 are formed by patterning by means of dry etching and comprises an Al alloy thin film comprising 0.1 to 1.5 atom % of Si and/or Ge, 0.1 to 3.0 atom % of Ni and/or Co, and 0.1 to 0.5 atom % of La and/or Nd, and the thin film transistor is directly connected with the semiconductor layer 1.
摘要翻译：本发明提供一种薄膜晶体管基板和显示装置，其中不会引起源电极和漏电极的干蚀刻速率的降低; 不产生蚀刻残留物; 并且可以在半导体层和诸如源极和漏极之类的金属线之间消除阻挡金属。本发明是一种具有半导体层1，源电极2，漏电极3和透明导电膜4的薄膜晶体管基板，其中源电极2和漏电极3通过干式图案形成并且包括包含0.1至1.5原子％的Si和/或Ge，0.1至3.0原子％的Ni和/或Co，以及0.1至0.5原子％的La和/或Nd的Al合金薄膜，并且薄膜晶体管与半导体层1直接连接。

3. 发明申请

US20100065847A1 AL ALLOY FILM FOR DISPLAY DEVICE,DISPLAY DEVICE, AND SPUTTERING TARGET 有权
标题翻译：用于显示装置的AL合金膜，显示装置和喷射目标
公开(公告)号：US20100065847A1
公开(公告)日：2010-03-18
申请号：US12312907
申请日：2007-11-27
申请人： Hiroshi Gotou , Katsufumi Tomihisa , Aya Hino , Hiroyuki Okuno , Junichi Nakai , Nobuyuki Kawakami , Mototaka Ochi
发明人： Hiroshi Gotou , Katsufumi Tomihisa , Aya Hino , Hiroyuki Okuno , Junichi Nakai , Nobuyuki Kawakami , Mototaka Ochi
IPC分类号： H01L33/00 , H01B5/00 , C23C14/34
CPC分类号： H01L29/4908 , H01L23/53219 , H01L27/124 , H01L29/458 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides an Al alloy film for a display device, to be directly connected to a conductive oxide film on a substrate, the Al alloy film comprising Ge in an amount of 0.05 to 0.5 at %, and comprising Gd and/or La in a total amount of 0.05 to 0.45 at %, a display device using the same, and a sputtering target for the display device. For the Al alloy film of the present invention, even when a barrier metal is not provided, and a conductive oxide film and the Al alloy film are directly connected, the adhesion between the conductive oxide film and the Al alloy film is high, and the contact resistivity is low, and preferably, the dry etching property is also excellent.
摘要翻译：本发明提供一种用于显示装置的Al合金膜，其直接连接到基板上的导电氧化物膜，所述Al合金膜包含0.05至0.5原子％的Ge并且包含Gd和/或La 总量为0.05〜0.45at％，使用该显示装置的显示装置以及显示装置的溅射靶。对于本发明的Al合金膜，即使没有设置阻挡金属，并且导电氧化物膜和Al合金膜直接连接，导电氧化物膜和Al合金膜之间的粘合力高，接触电阻率低，优选干蚀刻性也优异。

4. 发明申请

US20090176064A1 Membrane Structure Element and Method for Manufacturing Same 有权
标题翻译：膜结构元件及其制造方法
公开(公告)号：US20090176064A1
公开(公告)日：2009-07-09
申请号：US12225670
申请日：2007-03-28
申请人： Takayuki Hirano , Nobuyuki Kawakami , Masato Kannaka
发明人： Takayuki Hirano , Nobuyuki Kawakami , Masato Kannaka
IPC分类号： B32B3/10 , B05D3/02 , B05D5/12 , C23C16/513 , H01L21/306
CPC分类号： G01F1/692 , B81B2201/0278 , B81B2203/0127 , B81C1/00666 , B81C2201/0169 , B81C2201/0178 , C23C16/402 , C23C16/56 , Y10T428/24488 , Y10T428/24612
摘要： It is intended to provide a membrane structure element that can be easily manufactured, has an excellent insulating property and high quality; and a method for manufacturing the membrane structure element. The manufacturing method is for manufacturing a membrane structure element including a membrane formed of a silicon oxide film and a substrate which supports the membrane in a hollow state by supporting a part of a periphery of the membrane. The method includes: a film formation step of forming a heat-shrinkable silicon oxide film 13 on a surface of a silicon substrate 2 by plasma CVD method; a heat treatment step of performing a heat treatment to cause the thermal shrinkage of the silicon oxide film 13 formed on the substrate 1; and a removal step of removing a part of the substrate 2 in such a manner that a membrane-corresponding part of the silicon oxide film 13 is supported as a membrane in a hollow state with respect to the substrate 2 to form a recessed part 4.
摘要翻译：本发明提供可以容易地制造，具有优异的绝缘性和高质量的膜结构元件; 和膜结构元件的制造方法。该制造方法是用于制造包括由氧化硅膜形成的膜的膜结构元件和通过支撑膜的周边的一部分而将膜支撑在中空状态的基板。该方法包括：通过等离子体CVD法在硅衬底2的表面上形成热收缩氧化硅膜13的成膜步骤; 对形成在基板1上的氧化硅膜13的热收缩进行热处理的热处理工序; 以及去除基板2的一部分的去除步骤，使得氧化硅膜13的膜相应部分作为相对于基板2的中空状态的膜被支撑以形成凹部4。

5. 发明申请

US20090017255A1 Dielectric line and production method therefor 审中-公开
标题翻译：介电线及其制造方法
公开(公告)号：US20090017255A1
公开(公告)日：2009-01-15
申请号：US12230689
申请日：2008-09-03
申请人： Masakatsu Maruyama , Nobuyuki Kawakami , Yoshito Fukumoto , Takayuki Hirano
发明人： Masakatsu Maruyama , Nobuyuki Kawakami , Yoshito Fukumoto , Takayuki Hirano
IPC分类号： B32B7/00
CPC分类号： H01P3/165 , H01P11/006 , Y10T428/24182
摘要： A dielectric line having a sufficient ensured strength and being suitable for mass production and a production method therefor are provided. The production method is a method for manufacturing a dielectric line having a dielectric strip which is provided between two conductive plates approximately parallel to each other and which has a width smaller than that of the conductive plates, and dielectric medium layers which are filled between the conductive plates other than the dielectric strip and which is composed of a porous material having a dielectric constant smaller than that of the dielectric strip. The dielectric line (NRD guide) is produced by film forming steps S11 and S12 in which a film of a dielectric raw material is formed on one of the conductive plates, a strip exposure step S13 in which a part of the above film having a shape corresponding to the dielectric strip is exposed to predetermined light, beams, or vapor, and pore forming steps S15 and S16 in which the entire film of the dielectric raw material is made porous.
摘要翻译：提供具有足够的确保强度并适合于批量生产的介质线及其制造方法。该制造方法是制造具有介电条的介质线的方法，该介质条设置在彼此大致平行的两个导电板之间，其宽度小于导电板的宽度，以及填充在导电性除了介质条之外的板，其由介电常数小于介质条的介电常数的多孔材料构成。介质线（NRD导向件）是通过在其中一个导电板上形成电介质原料的薄膜形成步骤S11和S12来制造的，条带曝光步骤S13，其中上述薄膜的一部分具有形状相当于电介质条被暴露于预定的光，光束或蒸汽，以及孔形成步骤S15和S16，其中电介质原料的整个膜被制成多孔的。

6. 发明授权

US07432038B2 Dielectric line and production method therefor 失效
标题翻译：介电线及其制造方法
公开(公告)号：US07432038B2
公开(公告)日：2008-10-07
申请号：US10543135
申请日：2004-01-05
申请人： Masakatsu Maruyama , Nobuyuki Kawakami , Yoshito Fukumoto , Takayuki Hirano
发明人： Masakatsu Maruyama , Nobuyuki Kawakami , Yoshito Fukumoto , Takayuki Hirano
IPC分类号： G03F7/20 , G03F7/26
CPC分类号： H01P3/165 , H01P11/006 , Y10T428/24182
摘要： A dielectric line having a sufficient ensured strength and being suitable for mass production and a production method therefor are provided. The production method is a method for manufacturing a dielectric line having a dielectric strip which is provided between two conductive plates approximately parallel to each other and which has a width smaller than that of the conductive plates, and dielectric medium layers which are filled between the conductive plates other than the dielectric strip and which is composed of a porous material having a dielectric constant smaller than that of the dielectric strip. The dielectric line (NRD guide) is produced by film forming steps S11 and S12 in which a film of a dielectric raw material is formed on one of the conductive plates, a strip exposure step S13 in which a part of the above film having a shape corresponding to the dielectric strip is exposed to predetermined light, beams, or vapor, and pore forming steps S15 and S16 in which the entire film of the dielectric raw material is made porous.
摘要翻译：提供具有足够的确保强度并适合于批量生产的介质线及其制造方法。该制造方法是制造具有介电条的介质线的方法，该介质条设置在彼此大致平行的两个导电板之间，其宽度小于导电板的宽度，以及填充在导电性除了介质条之外的板，其由介电常数小于介质条的介电常数的多孔材料构成。电介质线（NRD导向件）通过其中在一个导电板上形成电介质原料的薄膜形成步骤S11和S12来制造，条带曝光步骤S13，其中部分上述膜具有与介质条相对应的形状暴露于预定的光，光束或蒸汽，以及孔形成步骤S 15和S 16，其中电介质原料的整个膜是多孔的。

7. 发明申请

US20060102937A1 Dielectric line and production method therefor 失效
标题翻译：介电线及其制造方法
公开(公告)号：US20060102937A1
公开(公告)日：2006-05-18
申请号：US10543135
申请日：2004-01-05
申请人： Masakatsu Maruyama , Nobuyuki Kawakami , Yoshito Fukumoto , Takayuki Hirano
发明人： Masakatsu Maruyama , Nobuyuki Kawakami , Yoshito Fukumoto , Takayuki Hirano
IPC分类号： H01L29/80
CPC分类号： H01P3/165 , H01P11/006 , Y10T428/24182
摘要： A dielectric line having a sufficient ensured strength and being suitable for mass production and a production method therefor are provided. The production method is a method for manufacturing a dielectric line having a dielectric strip which is provided between two conductive plates approximately parallel to each other and which has a width smaller than that of the conductive plates, and dielectric medium layers which are filled between the conductive plates other than the dielectric strip and which is composed of a porous material having a dielectric constant smaller than that of the dielectric strip. The dielectric line (NRD guide) is produced by film forming steps S11 and S12 in which a film of a dielectric raw material is formed on one of the conductive plates, a strip exposure step S13 in which a part of the above film having a shape corresponding to the dielectric strip is exposed to predetermined light, beams, or vapor, and pore forming steps S15 and S16 in which the entire film of the dielectric raw material is made porous.
摘要翻译：提供具有足够的确保强度并适合于批量生产的介质线及其制造方法。该制造方法是制造具有介电条的介质线的方法，该介质条设置在彼此大致平行的两个导电板之间，其宽度小于导电板的宽度，以及填充在导电性除了介质条之外的板，其由介电常数小于介质条的介电常数的多孔材料构成。电介质线（NRD导向件）通过其中在一个导电板上形成电介质原料的薄膜形成步骤S11和S12来制造，条带曝光步骤S13，其中部分上述膜具有与介质条相对应的形状暴露于预定的光，光束或蒸汽，以及孔形成步骤S 15和S 16，其中电介质原料的整个膜是多孔的。

8. 发明授权

US06804900B2 Method for drying microstructure member 失效
标题翻译：干燥微结构件的方法
公开(公告)号：US06804900B2
公开(公告)日：2004-10-19
申请号：US10636777
申请日：2003-08-08
申请人： Nobuyuki Kawakami , Toshiro Kugimiya
发明人： Nobuyuki Kawakami , Toshiro Kugimiya
IPC分类号： F26B300
CPC分类号： G03F7/32 , G03F7/40
摘要： Method for drying a microstructure member having many micro concavities in a surface, the micro concavities containing water, includes adjusting the temperature of liquid inside the micro concavities to a temperature in the range of the cloud point of a surfactant ±1° C., and supplying a mixture of the surfactant and a hydrophobic solvent adjusted to a temperature in the range of the cloud point ±1° C. into the micro concavities to remove part or all of the water; heating the liquid inside the micro concavities to a temperature exceeding the cloud point +1° C., and supplying the hydrophobic solvent controlled to a temperature exceeding the cloud point +1° C. into the micro concavities to replace the liquid in the concavities with the hydrophobic solvent; and placing the resulting microstructure member with the concavities into contact with liquid or supercritical carbon dioxide to replace the hydrophobic solvent with the liquid or supercritical carbon dioxide.
摘要翻译：在表面具有多个微凹部的微结构构件的干燥方法，含有水的微凹部包括将微凹部内的液体的温度调节至表面活性剂的浊点±1℃的范围内的温度，以及将表面活性剂和调整到浊点±1℃范围内的温度的疏水溶剂的混合物供应到微凹部中以除去部分或全部水; 将微凹部内的液体加热到超过浊点+ 1℃的温度，并将控制到超过浊点+ 1℃的温度的疏水性溶剂供给到微凹部中，以将凹部中的液体替换为疏水性溶剂; 并将所得到的具有凹部的微结构构件与液体或超临界二氧化碳接触以用液体或超临界二氧化碳代替疏水性溶剂。

9. 发明授权

US08786090B2 Al alloy film for display device, display device, and sputtering target 有权
标题翻译：铝合金薄膜，显示装置，溅射靶
公开(公告)号：US08786090B2
公开(公告)日：2014-07-22
申请号：US12312907
申请日：2007-11-27
申请人： Hiroshi Gotou , Katsufumi Tomihisa , Aya Hino , Hiroyuki Okuno , Junichi Nakai , Nobuyuki Kawakami , Mototaka Ochi
发明人： Hiroshi Gotou , Katsufumi Tomihisa , Aya Hino , Hiroyuki Okuno , Junichi Nakai , Nobuyuki Kawakami , Mototaka Ochi
IPC分类号： H01L29/43
CPC分类号： H01L29/4908 , H01L23/53219 , H01L27/124 , H01L29/458 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides an Al alloy film for a display device, to be directly connected to a conductive oxide film on a substrate, the Al alloy film comprising Ge in an amount of 0.05 to 0.5 at %, and comprising Gd and/or La in a total amount of 0.05 to 0.45 at %, a display device using the same, and a sputtering target for the display device. For the Al alloy film of the present invention, even when a barrier metal is not provided, and a conductive oxide film and the Al alloy film are directly connected, the adhesion between the conductive oxide film and the Al alloy film is high, and the contact resistivity is low, and preferably, the dry etching property is also excellent.
摘要翻译：本发明提供一种用于显示装置的Al合金膜，其直接连接到基板上的导电氧化物膜，所述Al合金膜包含0.05至0.5原子％的Ge并且包含Gd和/或La 总量为0.05〜0.45at％，使用该显示装置的显示装置和显示装置的溅射靶。对于本发明的Al合金膜，即使没有设置阻挡金属，并且导电氧化物膜和Al合金膜直接连接，导电氧化物膜和Al合金膜之间的粘合力高，接触电阻率低，优选干蚀刻性也优异。

10. 发明授权

US08163143B2 Al-Ni-La-Si system Al-based alloy sputtering target and process for producing the same 有权
标题翻译： Al-Ni-La-Si系Al基合金溅射靶及其制造方法
公开(公告)号：US08163143B2
公开(公告)日：2012-04-24
申请号：US12172442
申请日：2008-07-14
申请人： Katsutoshi Takagi , Yuki Iwasaki , Masaya Ehira , Akira Nanbu , Mototaka Ochi , Hiroshi Goto , Nobuyuki Kawakami
发明人： Katsutoshi Takagi , Yuki Iwasaki , Masaya Ehira , Akira Nanbu , Mototaka Ochi , Hiroshi Goto , Nobuyuki Kawakami
IPC分类号： C23C14/00
CPC分类号： C23C14/3414 , B22F2998/10 , C22C1/0491 , C22C21/00 , C22F1/04 , B22F9/082 , B22F3/115 , B22F3/15 , B22F3/17 , B22F3/18
摘要： The present invention relates to an Al—Ni—La—Si system Al-based alloy sputtering target including Ni, La and Si, in which, when a section from (¼)t to (¾)t (t: thickness) in a cross section vertical to a plane of the sputtering target is observed with a scanning electron microscope at a magnification of 2000 times, (1) a total area of an Al—Ni system intermetallic compound having an average particle diameter of 0.3 μm to 3 μm with respect to a total area of the entire Al—Ni system intermetallic compound is 70% or more in terms of an area fraction, the Al—Ni system intermetallic compound being mainly composed of Al and Ni; and (2) a total area of an Al—Ni—La—Si system intermetallic compound having an average particle diameter of 0.2 μm to 2 μm with respect to a total area of the entire Al—Ni—La—Si system intermetallic compound is 70% or more in terms of an area fraction, the Al—Ni—La—Si system intermetallic compound being mainly composed of Al, Ni, La, and Si.
摘要翻译：本发明涉及包含Ni，La和Si的Al-Ni-La-Si系Al基合金溅射靶，其中当在（a）中的（¼）t至（¾）t（t：厚度）用扫描电子显微镜观察垂直于溅射靶的平面的横截面为2000倍，（1）平均粒径为0.3μm〜3μm的Al-Ni系金属间化合物的总面积与 Al-Ni系金属间化合物主要由Al和Ni构成，Al-Ni体系金属间化合物的总面积为面积率的70％以上，和（2）相对于Al-Ni-La-Si体系金属间化合物的总面积，平均粒径为0.2μm〜2μm的Al-Ni-La-Si系金属间化合物的总面积为 Al-Ni-La-Si系金属间化合物主要由Al，Ni，La和Si组成，面积分数为70％以上。

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