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1. 发明申请

US20130105631A1 ICING DETECTOR PROBE AND ICING DETECTOR WITH THE SAME 有权
标题翻译：检测器探测器及其检测器
公开(公告)号：US20130105631A1
公开(公告)日：2013-05-02
申请号：US13809934
申请日：2011-06-30
申请人： Yingchun Chen , Lin Ye , Miao Zhang , Junfeng Ge , Lijuan Feng , Tiejun Liu , Feng Zhou
发明人： Yingchun Chen , Lin Ye , Miao Zhang , Junfeng Ge , Lijuan Feng , Tiejun Liu , Feng Zhou
IPC分类号： B64D15/20
CPC分类号： B64D15/20
摘要： An icing detector probe includes three sections arranged sequentially along the direction of air flow, namely, a first section, a second section and a third section. The shape of the outer surface of the first section is suitable for collecting droplets in the air flow. The shape of the outer surface of the second section is suitable for full decelerating and releasing latent heat of large droplets during their movements. The outer surface of the third section is suitable for icing of large droplets. The probe detects icing by distinguishing and identify large droplets icing. The probe effectively detects types of traditional icing, thus being helpful for exact detection of icing thickness. An icing detector including said icing detector probe is also provided.
摘要翻译：结冰检测器探头包括沿空气流动方向依次布置的三个部分，即第一部分，第二部分和第三部分。第一部分的外表面的形状适合于在空气流中收集液滴。第二部分的外表面的形状适合于在其运动期间完全减速和释放大液滴的潜热。第三部分的外表面适用于大液滴的结冰。探测器通过识别和识别大型液滴结冰来检测结冰。探头有效地检测传统结冰的类型，有助于精确检测结冰厚度。还提供了包括所述结冰检测器探针的结冰检测器。

2. 发明授权

US09079669B2 Icing detector probe and icing detector with the same 有权
标题翻译：结冰检测器探头和结冰探测器相同
公开(公告)号：US09079669B2
公开(公告)日：2015-07-14
申请号：US13809934
申请日：2011-06-30
申请人： Yingchun Chen , Lin Ye , Miao Zhang , Junfeng Ge , Lijuan Feng , Tiejun Liu , Feng Zhou
发明人： Yingchun Chen , Lin Ye , Miao Zhang , Junfeng Ge , Lijuan Feng , Tiejun Liu , Feng Zhou
IPC分类号： B64D15/20
CPC分类号： B64D15/20
摘要： An icing detector probe includes three sections arranged sequentially along the direction of air flow, namely, a first section, a second section and a third section. The shape of the outer surface of the first section is suitable for collecting droplets in the air flow. The shape of the outer surface of the second section is suitable for full decelerating and releasing latent heat of large droplets during their movements. The outer surface of the third section is suitable for icing of large droplets. The probe detects icing by distinguishing and identify large droplets icing. The probe effectively detects types of traditional icing, thus being helpful for exact detection of icing thickness. An icing detector including said icing detector probe is also provided.
摘要翻译：结冰检测器探头包括沿空气流动方向依次布置的三个部分，即第一部分，第二部分和第三部分。第一部分的外表面的形状适合于在空气流中收集液滴。第二部分的外表面的形状适合于在其运动期间完全减速和释放大液滴的潜热。第三部分的外表面适用于大液滴的结冰。探测器通过识别和识别大型液滴结冰来检测结冰。探头有效地检测传统结冰的类型，有助于精确检测结冰厚度。还提供了包括所述结冰检测器探针的结冰检测器。

3. 发明申请

US20130113926A1 DETECTING DEVICE FOR DETECTING ICING BY IMAGE AND DETECTING METHOD THEREOF 审中-公开
标题翻译：用于检测图像检测的检测装置及其检测方法
公开(公告)号：US20130113926A1
公开(公告)日：2013-05-09
申请号：US13807964
申请日：2011-06-16
申请人： Yingchun Chen , Lin Ye , Miao Zhang , Junfeng Ge , Lijuan Feng , Tiejun Liu , Feng Zhou
发明人： Yingchun Chen , Lin Ye , Miao Zhang , Junfeng Ge , Lijuan Feng , Tiejun Liu , Feng Zhou
IPC分类号： B64D15/20
CPC分类号： B64D15/20 , G06T7/0004 , G06T7/41 , G06T2207/30156
摘要： A detecting device for detecting icing by an image includes an image acquiring system (1-A) and an image processing system (2-A). The image acquiring system (1-A) can acquire an image of an object's surface. The image processing system (2-A) can analyze the image and obtain an icing condition of the object's surface. The detecting device is simple and reliable. It can identify the category of the icing effectively. So, it can improve the accurateness of the icing detection significantly and can accomplish the detection of the object's whole surface. Furthermore, it can detect an icing condition of a super-cooled large droplet. A method for detecting an icing condition of an object's surface using the detecting device is also provided.
摘要翻译：用于检测图像的结冰的检测装置包括图像获取系统（1-A）和图像处理系统（2-A）。图像获取系统（1-A）可以获取对象表面的图像。图像处理系统（2-A）可以分析图像并获得物体表面的结冰状况。检测装置简单可靠。它可以有效地识别结冰的类别。因此，可以显着提高结冰检测的准确性，可以完成物体整体表面的检测。此外，它可以检测超冷却大液滴的结冰状况。还提供了一种使用检测装置检测物体表面的结冰状况的方法。

4. 发明申请

US20140004684A1 Method for Preparing GOI Chip Structure 有权
标题翻译：制备GOI芯片结构的方法
公开(公告)号：US20140004684A1
公开(公告)日：2014-01-02
申请号：US13825010
申请日：2012-09-25
申请人： Zengfeng Di , Lin Ye , Zhongying Xue , Miao Zhang
发明人： Zengfeng Di , Lin Ye , Zhongying Xue , Miao Zhang
IPC分类号： H01L21/762
CPC分类号： H01L21/76254
摘要： The present invention provides a method for preparing a GOI chip structure, where, in the method, first, a SiGe on insulator (SGOI) chip structure is made by using a Smart-Cut technology, and then, germanium condensation technology is performed on the SGOI chip structure, so as to obtain a GOI chip structure. Because the SGOI made by the Smart-Cut technology basically has no misfit dislocation in an SGOI/BOX interface, the threading dislocation density of the GOI is finally reduced. A technique of the present invention is simple, the high-quality GOI chip structure can be implemented, and the germanium condensation technology is greatly improved. An ion implantation technology and an annealing technology are quite mature techniques in the current semiconductor industry, so that such a preparation method greatly improves the possibility of wide use of the germanium concentration technology in the semiconductor industry.
摘要翻译：本发明提供了一种制备GOI芯片结构的方法，其中在该方法中，首先通过使用Smart-Cut技术制造绝缘体上的SiGe（SGOI）芯片结构，然后在 SGOI芯片结构，从而获得GOI芯片结构。由于采用智能切割技术制成的SGOI基本上在SGOI / BOX接口中没有错配位错，因此GOI的穿透位错密度最终降低。本发明的技术简单，可以实现高质量的GOI芯片结构，并且锗冷凝技术得到极大改善。离子注入技术和退火技术在目前的半导体工业中是相当成熟的技术，因此这种制备方法大大提高了半导体工业中锗浓缩技术的广泛应用的可能性。

5. 发明授权

US08877608B2 Method for preparing GOI chip structure 有权
标题翻译：制备GOI芯片结构的方法
公开(公告)号：US08877608B2
公开(公告)日：2014-11-04
申请号：US13825010
申请日：2012-09-25
申请人： Zengfeng Di , Lin Ye , Zhongying Xue , Miao Zhang
发明人： Zengfeng Di , Lin Ye , Zhongying Xue , Miao Zhang
IPC分类号： H01L21/46 , H01L21/762
CPC分类号： H01L21/76254
摘要： The present invention provides a method for preparing a GOI chip structure, where, in the method, first, a SiGe on insulator (SGOI) chip structure is made by using a SMART CUT technology, and then, germanium condensation technology is performed on the SGOI chip structure, so as to obtain a GOI chip structure. Because the SGOI made by the Smart-Cut technology basically has no misfit dislocation in an SGOI/BOX interface, the threading dislocation density of the GOI is finally reduced. A technique of the present invention is simple, the high-quality GOI chip structure can be implemented, and the germanium condensation technology is greatly improved. An ion implantation technology and an annealing technology are quite mature techniques in the current semiconductor industry, so that such a preparation method greatly improves the possibility of wide use of the germanium concentration technology in the semiconductor industry.
摘要翻译：本发明提供了一种制备GOI芯片结构的方法，其中在该方法中，首先通过使用SMART CUT技术制造绝缘体上硅锗（SGOI）芯片结构，然后在SGOI上进行锗冷凝技术芯片结构，从而获得GOI芯片结构。由于采用智能切割技术制成的SGOI基本上在SGOI / BOX接口中没有错配位错，因此GOI的穿透位错密度最终降低。本发明的技术简单，可以实现高质量的GOI芯片结构，并且锗冷凝技术得到极大改善。离子注入技术和退火技术在目前的半导体工业中是相当成熟的技术，因此这种制备方法大大提高了半导体工业中锗浓缩技术的广泛应用的可能性。

6. 发明申请

US20140160731A1 LED LAMP AND ILLUMINATION AREA HAVING SAME 有权
标题翻译： LED灯和照明领域
公开(公告)号：US20140160731A1
公开(公告)日：2014-06-12
申请号：US13978064
申请日：2011-07-12
申请人： Lin Ye , Le Xu , Xiaobo You , Wanjiong Lin
发明人： Lin Ye , Le Xu , Xiaobo You , Wanjiong Lin
IPC分类号： F25D27/00 , F21V31/00 , F21K99/00
CPC分类号： F25D27/00 , F21K9/27 , F21S4/28 , F21V15/01 , F21V15/015 , F21V19/0055 , F21V21/025 , F21V23/06 , F21V31/005 , F21W2131/305 , F21W2131/405 , F21Y2103/10 , F21Y2115/10
摘要： A freezer lamp includes a strip lamp holder, a light module and a socket. The light module is disposed in the strip lamp holder. The socket is disposed on the end of the strip lamp holder and electrically connected to the light module. The strip lamp holder includes a main lateral surface and a mounting lateral surface. An installation groove is formed in the main lateral surface along length direction thereof. The light module is received into the installation groove. Two clamping grooves are formed in the mounting lateral surface along length direction thereof and are spaced apart from each other. The distance between the two clamping edges is exactly equal to that between the two clamping grooves. The clamping edge is cooperating with the corresponding buckle of clamping groove.
摘要翻译：冷冻灯包括条形灯座，灯模块和插座。灯模块设置在条形灯座中。插座设置在条形灯座的端部并电连接到灯模块。带状灯座包括主侧面和安装侧面。在主侧面沿其长度方向形成安装槽。光模块被接收到安装槽中。两个夹紧槽沿其长度方向形成在安装侧面上并且彼此间隔开。两个夹紧边缘之间的距离与两个夹紧槽之间的距离完全相同。夹紧边缘与相应的夹紧槽相配合。

7. 发明授权

US09127874B2 LED lamp and illumination area having same 有权
标题翻译： LED灯和照明区域相同
公开(公告)号：US09127874B2
公开(公告)日：2015-09-08
申请号：US13978064
申请日：2011-07-12
申请人： Lin Ye , Le Xu , Xiaobo You , Wanjiong Lin
发明人： Lin Ye , Le Xu , Xiaobo You , Wanjiong Lin
IPC分类号： F25D27/00 , F21V31/00 , F21S4/00 , F21V21/02 , F21V15/01 , F21K99/00 , F21V19/00 , F21V23/06 , F21Y101/02 , F21Y103/00 , F21V15/015 , F21W131/305 , F21W131/405
CPC分类号： F25D27/00 , F21K9/27 , F21S4/28 , F21V15/01 , F21V15/015 , F21V19/0055 , F21V21/025 , F21V23/06 , F21V31/005 , F21W2131/305 , F21W2131/405 , F21Y2103/10 , F21Y2115/10
摘要： A freezer lamp includes a strip lamp holder, a light module, a socket, and a plurality of decks. The light module is disposed in the strip lamp holder. The socket is disposed on the end of the strip lamp holder and electrically connected to the light module. The strip lamp holder includes a main lateral surface and a mounting lateral surface. An installation groove is formed in the main lateral surface along length direction thereof. The light module is received into the installation groove. Two clamping grooves are formed in the mounting lateral surface along length direction thereof and are spaced apart from each other. Each of the decks includes two clamping edges which are spaced apart from each other. The distance between the two clamping edges is exactly equal to that between the two clamping grooves. The clamping edge is cooperating with the corresponding buckle of the clamping groove.
摘要翻译：冷冻灯包括条状灯座，灯模块，插座和多个甲板。灯模块设置在条形灯座中。插座设置在条形灯座的端部并电连接到灯模块。带状灯座包括主侧面和安装侧面。在主侧面沿其长度方向形成安装槽。光模块被接收到安装槽中。两个夹紧槽沿其长度方向形成在安装侧面上并且彼此间隔开。每个甲板包括彼此间隔开的两个夹紧边缘。两个夹紧边缘之间的距离与两个夹紧槽之间的距离完全相同。夹紧边缘与夹紧槽的相应的扣环配合。

8. 外观设计

USD1010232S1 Helmet 有权
公开(公告)号：USD1010232S1
公开(公告)日：2024-01-02
申请号：US29891028
申请日：2023-04-28
申请人： Lin Ye
设计人： Lin Ye
摘要： FIG. 1 is a front, right and top perspective view of a helmet, showing my design.
FIG. 2 is a front, left and bottom perspective view thereof.
FIG. 3 is a front elevation view thereof.
FIG. 4 is a rear elevation view thereof.
FIG. 5 is a left side elevation view thereof.
FIG. 6 is a right side elevation view thereof.
FIG. 7 is a top plan view thereof.
FIG. 8 is a bottom plan view thereof.
FIG. 9 is an enlarged view taken from FIG. 5; and,
FIG. 10 is an enlarged view taken from FIG. 6.
The broken lines depict portions of the helmet that form no part of the claimed design. The broken line circles in FIGS. 5 & 6 depict the limits of the enlarged views and form no part of the claimed design.

9. 发明授权

US06379574B1 Integrated post-etch treatment for a dielectric etch process 失效
标题翻译：用于电介质蚀刻工艺的集成后蚀刻处理
公开(公告)号：US06379574B1
公开(公告)日：2002-04-30
申请号：US09320251
申请日：1999-05-26
申请人： Hui Ou-Yang , Chih-Ping Yang , Lin Ye , Robert W. Wu , Chih-Pang Chen , You-Neng Cheng , Yang Chan-Lon , Tong-Yu Chen
发明人： Hui Ou-Yang , Chih-Ping Yang , Lin Ye , Robert W. Wu , Chih-Pang Chen , You-Neng Cheng , Yang Chan-Lon , Tong-Yu Chen
IPC分类号： B44C122
CPC分类号： H01L21/02063 , H01L21/31116
摘要： The present disclosure pertains to an integrated post-etch treatment method which is performed after a dielectric etch process. Using the method of the invention, byproducts formed on the sidewalls of contact vias during the dielectric etch process can be removed efficiently. The method of the invention also reduces or eliminates the problem of polymer accumulation on process chamber surfaces. An overlying photoresist layer and anti-reflection layer are removed during the performance of the post-etch treatment method. Typically, after the etch of a dielectric material to define pattern or interconnect filling spaces, a series of post-etch treatment steps is performed to remove residues remaining on the wafer after the dielectric etch process. According to the method of the present invention, a post-etch treatment method including one or more steps is performed after the dielectric etch process, preferably within the same processing chamber in which the dielectric etch process was performed. The post-etch treatment method comprises exposing a semiconductor structure to a plasma generated from a source gas comprising oxygen, a nitrogen-comprising gas, and a reactive gas comprising hydrogen, carbon, and fluorine. Two optional steps, a flushing step prior to the post-etch treatment and a cleaning step subsequent to the post-etch treatment, can be performed for the purpose of enhancing the fluorine and byproduct removal and post-etch chamber cleaning.
摘要翻译：本公开涉及在电介质蚀刻工艺之后执行的集成后蚀刻处理方法。使用本发明的方法，可以有效地去除在电介质蚀刻工艺期间在接触通孔的侧壁上形成的副产物。本发明的方法还减少或消除了聚合物在处理室表面上积聚的问题。在蚀刻后处理方法的执行期间，去除覆盖的光致抗蚀剂层和抗反射层。通常，在蚀刻电介质材料以限定图案或互连填充空间之后，执行一系列后蚀刻处理步骤以在电介质蚀刻工艺之后去除残留在晶片上的残留物。根据本发明的方法，在电介质蚀刻工艺之后，优选在进行电介质蚀刻工艺的相同处理室内执行包括一个或多个步骤的后蚀刻处理方法。蚀刻后处理方法包括将半导体结构暴露于由包含氧，含氮气体和包含氢，碳和氟的反应性气体的源气体产生的等离子体。可以执行两个可选步骤，即在蚀刻后处理之前的冲洗步骤和在蚀刻后处理之后的清洁步骤，以便增强氟和副产物去除以及蚀刻后清洁。

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