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1. 发明申请

US20130105631A1 ICING DETECTOR PROBE AND ICING DETECTOR WITH THE SAME 有权
标题翻译：检测器探测器及其检测器
公开(公告)号：US20130105631A1
公开(公告)日：2013-05-02
申请号：US13809934
申请日：2011-06-30
申请人： Yingchun Chen , Lin Ye , Miao Zhang , Junfeng Ge , Lijuan Feng , Tiejun Liu , Feng Zhou
发明人： Yingchun Chen , Lin Ye , Miao Zhang , Junfeng Ge , Lijuan Feng , Tiejun Liu , Feng Zhou
IPC分类号： B64D15/20
CPC分类号： B64D15/20
摘要： An icing detector probe includes three sections arranged sequentially along the direction of air flow, namely, a first section, a second section and a third section. The shape of the outer surface of the first section is suitable for collecting droplets in the air flow. The shape of the outer surface of the second section is suitable for full decelerating and releasing latent heat of large droplets during their movements. The outer surface of the third section is suitable for icing of large droplets. The probe detects icing by distinguishing and identify large droplets icing. The probe effectively detects types of traditional icing, thus being helpful for exact detection of icing thickness. An icing detector including said icing detector probe is also provided.
摘要翻译：结冰检测器探头包括沿空气流动方向依次布置的三个部分，即第一部分，第二部分和第三部分。第一部分的外表面的形状适合于在空气流中收集液滴。第二部分的外表面的形状适合于在其运动期间完全减速和释放大液滴的潜热。第三部分的外表面适用于大液滴的结冰。探测器通过识别和识别大型液滴结冰来检测结冰。探头有效地检测传统结冰的类型，有助于精确检测结冰厚度。还提供了包括所述结冰检测器探针的结冰检测器。

2. 发明授权

US09079669B2 Icing detector probe and icing detector with the same 有权
标题翻译：结冰检测器探头和结冰探测器相同
公开(公告)号：US09079669B2
公开(公告)日：2015-07-14
申请号：US13809934
申请日：2011-06-30
申请人： Yingchun Chen , Lin Ye , Miao Zhang , Junfeng Ge , Lijuan Feng , Tiejun Liu , Feng Zhou
发明人： Yingchun Chen , Lin Ye , Miao Zhang , Junfeng Ge , Lijuan Feng , Tiejun Liu , Feng Zhou
IPC分类号： B64D15/20
CPC分类号： B64D15/20
摘要： An icing detector probe includes three sections arranged sequentially along the direction of air flow, namely, a first section, a second section and a third section. The shape of the outer surface of the first section is suitable for collecting droplets in the air flow. The shape of the outer surface of the second section is suitable for full decelerating and releasing latent heat of large droplets during their movements. The outer surface of the third section is suitable for icing of large droplets. The probe detects icing by distinguishing and identify large droplets icing. The probe effectively detects types of traditional icing, thus being helpful for exact detection of icing thickness. An icing detector including said icing detector probe is also provided.
摘要翻译：结冰检测器探头包括沿空气流动方向依次布置的三个部分，即第一部分，第二部分和第三部分。第一部分的外表面的形状适合于在空气流中收集液滴。第二部分的外表面的形状适合于在其运动期间完全减速和释放大液滴的潜热。第三部分的外表面适用于大液滴的结冰。探测器通过识别和识别大型液滴结冰来检测结冰。探头有效地检测传统结冰的类型，有助于精确检测结冰厚度。还提供了包括所述结冰检测器探针的结冰检测器。

3. 发明申请

US20130113926A1 DETECTING DEVICE FOR DETECTING ICING BY IMAGE AND DETECTING METHOD THEREOF 审中-公开
标题翻译：用于检测图像检测的检测装置及其检测方法
公开(公告)号：US20130113926A1
公开(公告)日：2013-05-09
申请号：US13807964
申请日：2011-06-16
申请人： Yingchun Chen , Lin Ye , Miao Zhang , Junfeng Ge , Lijuan Feng , Tiejun Liu , Feng Zhou
发明人： Yingchun Chen , Lin Ye , Miao Zhang , Junfeng Ge , Lijuan Feng , Tiejun Liu , Feng Zhou
IPC分类号： B64D15/20
CPC分类号： B64D15/20 , G06T7/0004 , G06T7/41 , G06T2207/30156
摘要： A detecting device for detecting icing by an image includes an image acquiring system (1-A) and an image processing system (2-A). The image acquiring system (1-A) can acquire an image of an object's surface. The image processing system (2-A) can analyze the image and obtain an icing condition of the object's surface. The detecting device is simple and reliable. It can identify the category of the icing effectively. So, it can improve the accurateness of the icing detection significantly and can accomplish the detection of the object's whole surface. Furthermore, it can detect an icing condition of a super-cooled large droplet. A method for detecting an icing condition of an object's surface using the detecting device is also provided.
摘要翻译：用于检测图像的结冰的检测装置包括图像获取系统（1-A）和图像处理系统（2-A）。图像获取系统（1-A）可以获取对象表面的图像。图像处理系统（2-A）可以分析图像并获得物体表面的结冰状况。检测装置简单可靠。它可以有效地识别结冰的类别。因此，可以显着提高结冰检测的准确性，可以完成物体整体表面的检测。此外，它可以检测超冷却大液滴的结冰状况。还提供了一种使用检测装置检测物体表面的结冰状况的方法。

4. 发明授权

US08877608B2 Method for preparing GOI chip structure 有权
标题翻译：制备GOI芯片结构的方法
公开(公告)号：US08877608B2
公开(公告)日：2014-11-04
申请号：US13825010
申请日：2012-09-25
申请人： Zengfeng Di , Lin Ye , Zhongying Xue , Miao Zhang
发明人： Zengfeng Di , Lin Ye , Zhongying Xue , Miao Zhang
IPC分类号： H01L21/46 , H01L21/762
CPC分类号： H01L21/76254
摘要： The present invention provides a method for preparing a GOI chip structure, where, in the method, first, a SiGe on insulator (SGOI) chip structure is made by using a SMART CUT technology, and then, germanium condensation technology is performed on the SGOI chip structure, so as to obtain a GOI chip structure. Because the SGOI made by the Smart-Cut technology basically has no misfit dislocation in an SGOI/BOX interface, the threading dislocation density of the GOI is finally reduced. A technique of the present invention is simple, the high-quality GOI chip structure can be implemented, and the germanium condensation technology is greatly improved. An ion implantation technology and an annealing technology are quite mature techniques in the current semiconductor industry, so that such a preparation method greatly improves the possibility of wide use of the germanium concentration technology in the semiconductor industry.
摘要翻译：本发明提供了一种制备GOI芯片结构的方法，其中在该方法中，首先通过使用SMART CUT技术制造绝缘体上硅锗（SGOI）芯片结构，然后在SGOI上进行锗冷凝技术芯片结构，从而获得GOI芯片结构。由于采用智能切割技术制成的SGOI基本上在SGOI / BOX接口中没有错配位错，因此GOI的穿透位错密度最终降低。本发明的技术简单，可以实现高质量的GOI芯片结构，并且锗冷凝技术得到极大改善。离子注入技术和退火技术在目前的半导体工业中是相当成熟的技术，因此这种制备方法大大提高了半导体工业中锗浓缩技术的广泛应用的可能性。

5. 发明申请

US20140004684A1 Method for Preparing GOI Chip Structure 有权
标题翻译：制备GOI芯片结构的方法
公开(公告)号：US20140004684A1
公开(公告)日：2014-01-02
申请号：US13825010
申请日：2012-09-25
申请人： Zengfeng Di , Lin Ye , Zhongying Xue , Miao Zhang
发明人： Zengfeng Di , Lin Ye , Zhongying Xue , Miao Zhang
IPC分类号： H01L21/762
CPC分类号： H01L21/76254
摘要： The present invention provides a method for preparing a GOI chip structure, where, in the method, first, a SiGe on insulator (SGOI) chip structure is made by using a Smart-Cut technology, and then, germanium condensation technology is performed on the SGOI chip structure, so as to obtain a GOI chip structure. Because the SGOI made by the Smart-Cut technology basically has no misfit dislocation in an SGOI/BOX interface, the threading dislocation density of the GOI is finally reduced. A technique of the present invention is simple, the high-quality GOI chip structure can be implemented, and the germanium condensation technology is greatly improved. An ion implantation technology and an annealing technology are quite mature techniques in the current semiconductor industry, so that such a preparation method greatly improves the possibility of wide use of the germanium concentration technology in the semiconductor industry.
摘要翻译：本发明提供了一种制备GOI芯片结构的方法，其中在该方法中，首先通过使用Smart-Cut技术制造绝缘体上的SiGe（SGOI）芯片结构，然后在 SGOI芯片结构，从而获得GOI芯片结构。由于采用智能切割技术制成的SGOI基本上在SGOI / BOX接口中没有错配位错，因此GOI的穿透位错密度最终降低。本发明的技术简单，可以实现高质量的GOI芯片结构，并且锗冷凝技术得到极大改善。离子注入技术和退火技术在目前的半导体工业中是相当成熟的技术，因此这种制备方法大大提高了半导体工业中锗浓缩技术的广泛应用的可能性。

6. 发明授权

US08330229B2 Hybrid orientation inversion mode GAA CMOSFET 失效
标题翻译：混合方向反演模式GAA CMOSFET
公开(公告)号：US08330229B2
公开(公告)日：2012-12-11
申请号：US12810740
申请日：2010-02-11
申请人： Deyuan Xiao , Xi Wang , Miao Zhang , Jing Chen , Zhongying Xue
发明人： Deyuan Xiao , Xi Wang , Miao Zhang , Jing Chen , Zhongying Xue
IPC分类号： H01L27/092
CPC分类号： H01L27/1211 , H01L21/823807 , H01L21/823821 , H01L21/845 , H01L27/1203 , H01L29/42392 , H01L29/78696
摘要： A hybrid orientation inversion mode GAA (Gate-All-Around) CMOSFET includes a PMOS region having a first channel, an NMOS region having a second channel and a gate region. The first channel and the second channel have a racetrack-shaped cross section and are formed of n-type Si (110) and p-type Si(100), respectively; the surfaces of the first channel and the second channel are substantially surrounded by the gate region; a buried oxide layer is disposed between the PMOS region and the NMOS region and between the PMOS or NMOS region and the Si substrate to isolate them from one another. The device structure according to the prevent invention is quite simple, compact and highly integrated. In an inversion mode, the devices have different orientation channels, the GAA structure with the racetrack-shaped, high-k gate dielectric layer and metal gate, so as to achieve high carrier mobility, and prevent polysilicon gate depletion and short channel effects.
摘要翻译：混合取向反转模式GAA（Gate-All-Around）CMOSFET包括具有第一通道的PMOS区域，具有第二通道的NMOS区域和栅极区域。第一通道和第二通道具有跑道形横截面并分别由n型Si（110）和p型Si（100）形成; 第一通道和第二通道的表面基本上被栅极区域包围; 在PMOS区域和NMOS区域之间以及在PMOS或NMOS区域和Si衬底之间设置掩埋氧化物层以将它们彼此隔离。根据本发明的装置结构相当简单，紧凑且高度集成。在反转模式中，器件具有不同的取向通道，GAA结构具有跑道形，高k栅介质层和金属栅极，从而实现高载流子迁移率，并防止多晶硅栅极耗尽和短沟道效应。

7. 发明申请

US20120112283A1 ESD PROTECTION DEVICES FOR SOI INTEGRATED CIRCUIT AND MANUFACTURING METHOD THEREOF 失效
标题翻译：用于SOI集成电路的ESD保护器件及其制造方法
公开(公告)号：US20120112283A1
公开(公告)日：2012-05-10
申请号：US13002303
申请日：2010-12-16
申请人： Xiaolu Huang , Xing Wei , Xinhong Cheng , Jing Chen , Miao Zhang , Xi Wang
发明人： Xiaolu Huang , Xing Wei , Xinhong Cheng , Jing Chen , Miao Zhang , Xi Wang
IPC分类号： H01L27/12 , H01L21/283
CPC分类号： H01L21/84 , H01L27/0255 , H01L27/1203
摘要： The present invention discloses an ESD protection structure in a SOI CMOS circuitry. The ESD protection structure includes a variety of longitudinal (vertical) PN junction structures having significantly enlarged junction areas for current flow. The resulting devices achieve increased heavy current release capability. Processes of fabricating varieties of the ESD protection longitudinal PN junction are also disclosed. Compatibility of the disclosed fabrication processes with current SOI technology reduces implementation cost and improves the integration robustness.
摘要翻译：本发明公开了一种SOI CMOS电路中的ESD保护结构。 ESD保护结构包括各种纵向（垂直）PN结结构，其具有用于电流的显着扩大的接合面积。所得到的装置实现了增加的大电流释放能力。还公开了制造ESD保护纵向PN结的品种的工艺。所公开的制造工艺与当前SOI技术的兼容性降低了实施成本并提高了集成度。

8. 发明申请

US20110254013A1 HYBRID ORIENTATION ACCUMULATION MODE GAA CMOSFET 失效
标题翻译：混合方向累积模式GAA CMOSFET
公开(公告)号：US20110254013A1
公开(公告)日：2011-10-20
申请号：US12810574
申请日：2010-02-11
申请人： Deyuan Xiao , Xi Wang , Miao Zhang , Jing Chen , Zhong Ying Xue
发明人： Deyuan Xiao , Xi Wang , Miao Zhang , Jing Chen , Zhong Ying Xue
IPC分类号： H01L27/092
CPC分类号： H01L29/78696 , H01L21/823807 , H01L21/84 , H01L27/0688 , H01L27/1203 , H01L29/42392
摘要： A hybrid orientation accumulation mode GAA (Gate-All-Around) CMOSFET includes a PMOS region having a first channel, an NMOS region having a second channel and a gate region. The first channel and the second channel have a racetrack-shaped cross section and are formed of p-type Si(110) and n-type Si(100), respectively; the surfaces of the first channel and the second channel are substantially surrounded by the gate region; a buried oxide layer is disposed between the PMOS region and the NMOS region and between the PMOS or NMOS region and the Si substrate to isolate them from one another. The device structure according to the prevent invention is quite simple, compact and highly integrated. In an accumulation mode, current flows through the overall racetrack-shaped channel. The disclosed device results in high carrier mobility. Meanwhile polysilicon gate depletion and short channel effects are prevented, and threshold voltage is increased.
摘要翻译：混合取向累积模式GAA（Gate-All-Around）CMOSFET包括具有第一通道的PMOS区域，具有第二通道的NMOS区域和栅极区域。第一通道和第二通道具有跑道形横截面并分别由p型Si（110）和n型Si（100）形成; 第一通道和第二通道的表面基本上被栅极区域包围; 在PMOS区域和NMOS区域之间以及在PMOS或NMOS区域和Si衬底之间设置掩埋氧化物层以将它们彼此隔离。根据本发明的装置结构相当简单，紧凑且高度集成。在积累模式中，电流流过整个跑道状通道。所公开的装置导致高载流子迁移率。同时防止多晶硅栅极耗尽和短沟道效应，并且阈值电压增加。

9. 发明申请

US20150194338A1 Method For Preparing Ultra-thin Material On Insulator Through Adsorption By Doped Ultra-thin Layer 有权
标题翻译：通过掺杂超薄层吸附绝缘体制备超薄材料的方法
公开(公告)号：US20150194338A1
公开(公告)日：2015-07-09
申请号：US13825079
申请日：2012-09-25
申请人： Zengfeng Di , Da Chen , Jiantao Bian , Zhongying Xue , Miao Zhang
发明人： Zengfeng Di , Da Chen , Jiantao Bian , Zhongying Xue , Miao Zhang
IPC分类号： H01L21/762 , H01L21/306
CPC分类号： H01L21/76254 , H01L21/30604 , H01L21/30625
摘要： The present invention provides a method for preparing an ultra-thin material on insulator through adsorption by a doped ultra-thin layer. In the method, first, an ultra-thin doped single crystal film and an ultra-thin top film (or contains a buffer layer) are successively and epitaxially grown on a first substrate, and then a high-quality ultra-thin material on insulator is prepared through ion implantation and a bonding process. A thickness of the prepared ultra-thin material on insulator ranges from 5 nm to 50 nm. In the present invention, the ultra-thin doped single crystal film adsorbs the implanted ion, and a micro crack is then formed, so as to implement ion-cut; therefore, the roughness of a surface of a ion-cut material on insulator is small. In addition, an impurity atom strengthens an ion adsorption capability of the ultra-thin single crystal film, so that an ion implantation dose and the annealing temperature can be lowered in the preparation procedure, thereby effectively reducing the damage caused by the implantation to the top film, and achieving objectives of improving production efficiency and reducing the production cost.
摘要翻译：本发明提供一种通过掺杂超薄层吸附制备绝缘体上的超薄材料的方法。在该方法中，首先，在第一基板上依次外延生长超薄掺杂单晶膜和超薄顶膜（或包含缓冲层），然后在绝缘体上形成高品质超薄材料通过离子注入和粘合工艺制备。所制备的绝缘体上的超薄材料的厚度范围为5nm至50nm。在本发明中，超薄掺杂单晶膜吸附注入的离子，然后形成微裂纹，从而实现离子切割; 因此，绝缘体上的离子切割材料的表面的粗糙度小。此外，杂质原子增强了超薄单晶膜的离子吸附能力，使得在制备过程中可以降低离子注入剂量和退火温度，从而有效地减少了植入到顶部的损伤电影，实现提高生产效率和降低生产成本的目标。

10. 发明授权

US08757990B2 Blower fan 有权
标题翻译：鼓风机
公开(公告)号：US08757990B2
公开(公告)日：2014-06-24
申请号：US13405347
申请日：2012-02-26
申请人： Xiang Liu , Ping Lu , Miao Zhang
发明人： Xiang Liu , Ping Lu , Miao Zhang
IPC分类号： F04D13/06 , F04D29/62 , F04D29/66 , F04D29/60
CPC分类号： F04D13/06 , F04D25/0606 , F04D25/082 , F04D29/603 , F04D29/668
摘要： A blower fan including a motor having a rotating shaft, a bracket, a fan housing having a cavity, a fan wheel, and fan blades. The motor is disposed on the fan housing via the bracket. An extended portion of the rotating shaft extends into the cavity of the fan housing and connects with the fan wheel. The fan blades are disposed on the rotating shaft and between the motor and the fan housing. On the casing of the motor is disposed with air vents. The bracket forms an annular side wall. A cavity is formed inside the annular side wall. The annular side wall is outfitted with air outlets which are connected with the cavity of the annular side wall and the fan blades are disposed in the cavity.
摘要翻译：一种风扇，包括具有旋转轴的电动机，支架，具有空腔的风扇壳体，风扇叶轮和风扇叶片。电机通过支架设置在风扇外壳上。旋转轴的延伸部分延伸到风扇壳体的空腔中并与风扇轮连接。风扇叶片设置在旋转轴上，电机和风扇外壳之间。在电机的外壳上配有通气孔。支架形成环形侧壁。在环形侧壁内形成空腔。环形侧壁配有与环形侧壁的空腔连接的空气出口，风扇叶片设置在空腔中。

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