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1. 发明授权

US07445472B1 Safety electric socket 失效
标题翻译：安全电插座
公开(公告)号：US07445472B1
公开(公告)日：2008-11-04
申请号：US11907302
申请日：2007-10-11
申请人： Fu-Hsiang Huang , Te-Lin Chan , Chih-Ping Yang
发明人： Fu-Hsiang Huang , Te-Lin Chan , Chih-Ping Yang
IPC分类号： H01R13/44
CPC分类号： H01R13/7036 , H01R13/4536
摘要： A safety electric socket in which two spring-supported doorplates are respectively pivoted to a holder block to block the neutral and hot slots against outside dust and water and to stop the spring-supported on/off switching button from downward movement. The doorplates are opened for allowing downward movement of the switching button to switch on power supply when the neutral and hot blades of an electric plug are respectively inserted into the neutral and hot slots.
摘要翻译：一个安全电插座，其中两个弹簧支撑的门板分别枢转到保持器块，以阻挡中空和热插槽抵挡外部灰尘和水，并且阻止弹簧支撑的开/关切换按钮向下移动。当电塞的中性和热叶片分别插入中性和热插槽时，门板被打开以允许切换按钮向下移动以打开电源。

2. 发明申请

US20070196333A1 Composition comprising mixtures of IFN-alpha subtypes 审中-公开
标题翻译：组合物包含IFN-α亚型的混合物
公开(公告)号：US20070196333A1
公开(公告)日：2007-08-23
申请号：US11360041
申请日：2006-02-23
申请人： Fu-Yung Lin , Chih-Ping Yang , Shir-Ly Huang , Ching-Yuan Lee
发明人： Fu-Yung Lin , Chih-Ping Yang , Shir-Ly Huang , Ching-Yuan Lee
IPC分类号： A61K38/21 , A61K9/14 , C12P21/04 , A61K9/48 , A61K9/20
CPC分类号： A61K38/212
摘要： A composition of human interferon-alpha (IFN-α) subtypes produced from human lymphoblastoid cells is disclosed. These purified IFN-α composition comprise higher specific activities and may be applied in the treatment of cancers, viruses, and immuno diseases.
摘要翻译：公开了由人类淋巴母细胞细胞产生的人类干扰素-α（IFN-α）亚型的组合物。这些纯化的IFN-α组合物包含较高的比活性，可用于治疗癌症，病毒和免疫疾病。

3. 发明授权

US06379574B1 Integrated post-etch treatment for a dielectric etch process 失效
标题翻译：用于电介质蚀刻工艺的集成后蚀刻处理
公开(公告)号：US06379574B1
公开(公告)日：2002-04-30
申请号：US09320251
申请日：1999-05-26
申请人： Hui Ou-Yang , Chih-Ping Yang , Lin Ye , Robert W. Wu , Chih-Pang Chen , You-Neng Cheng , Yang Chan-Lon , Tong-Yu Chen
发明人： Hui Ou-Yang , Chih-Ping Yang , Lin Ye , Robert W. Wu , Chih-Pang Chen , You-Neng Cheng , Yang Chan-Lon , Tong-Yu Chen
IPC分类号： B44C122
CPC分类号： H01L21/02063 , H01L21/31116
摘要： The present disclosure pertains to an integrated post-etch treatment method which is performed after a dielectric etch process. Using the method of the invention, byproducts formed on the sidewalls of contact vias during the dielectric etch process can be removed efficiently. The method of the invention also reduces or eliminates the problem of polymer accumulation on process chamber surfaces. An overlying photoresist layer and anti-reflection layer are removed during the performance of the post-etch treatment method. Typically, after the etch of a dielectric material to define pattern or interconnect filling spaces, a series of post-etch treatment steps is performed to remove residues remaining on the wafer after the dielectric etch process. According to the method of the present invention, a post-etch treatment method including one or more steps is performed after the dielectric etch process, preferably within the same processing chamber in which the dielectric etch process was performed. The post-etch treatment method comprises exposing a semiconductor structure to a plasma generated from a source gas comprising oxygen, a nitrogen-comprising gas, and a reactive gas comprising hydrogen, carbon, and fluorine. Two optional steps, a flushing step prior to the post-etch treatment and a cleaning step subsequent to the post-etch treatment, can be performed for the purpose of enhancing the fluorine and byproduct removal and post-etch chamber cleaning.
摘要翻译：本公开涉及在电介质蚀刻工艺之后执行的集成后蚀刻处理方法。使用本发明的方法，可以有效地去除在电介质蚀刻工艺期间在接触通孔的侧壁上形成的副产物。本发明的方法还减少或消除了聚合物在处理室表面上积聚的问题。在蚀刻后处理方法的执行期间，去除覆盖的光致抗蚀剂层和抗反射层。通常，在蚀刻电介质材料以限定图案或互连填充空间之后，执行一系列后蚀刻处理步骤以在电介质蚀刻工艺之后去除残留在晶片上的残留物。根据本发明的方法，在电介质蚀刻工艺之后，优选在进行电介质蚀刻工艺的相同处理室内执行包括一个或多个步骤的后蚀刻处理方法。蚀刻后处理方法包括将半导体结构暴露于由包含氧，含氮气体和包含氢，碳和氟的反应性气体的源气体产生的等离子体。可以执行两个可选步骤，即在蚀刻后处理之前的冲洗步骤和在蚀刻后处理之后的清洁步骤，以便增强氟和副产物去除以及蚀刻后清洁。

4. 发明授权

US5686486A 4-hydroxy-benzopyran-2-ones and 4-hydroxy-cycloalkyl�b!pyran-2-ones useful to treat retroviral infections 失效
标题翻译：可用于治疗逆转录病毒感染的4-羟基 - 苯并吡喃-2-酮和4-羟基 - 环烷基[b]吡喃-2-酮
公开(公告)号：US5686486A
公开(公告)日：1997-11-11
申请号：US492068
申请日：1995-08-04
申请人： Paul Kosta Tomich , Michael John Bohanon , Steven Ronald Turner , Joseph Walter Strohbach , Suvit Thaisrivongs , Richard C. Thomas , Karen Rene Romines , Chih-Ping Yang , Paul Adrian Aristoff , Harvey Irving Skulnick , Paul D. Johnson , Ronald B. Gammill , Qingwei Zhang , Gordon L. Bundy , David John Anderson , Lee S. Banitt
发明人： Paul Kosta Tomich , Michael John Bohanon , Steven Ronald Turner , Joseph Walter Strohbach , Suvit Thaisrivongs , Richard C. Thomas , Karen Rene Romines , Chih-Ping Yang , Paul Adrian Aristoff , Harvey Irving Skulnick , Paul D. Johnson , Ronald B. Gammill , Qingwei Zhang , Gordon L. Bundy , David John Anderson , Lee S. Banitt
IPC分类号： C07D311/46 , A61K31/352 , A61K31/365 , A61K31/37 , A61K31/38 , A61K31/381 , A61K31/40 , A61K31/4035 , A61K31/404 , A61K31/415 , A61K31/4178 , A61K31/4184 , A61K31/427 , A61K31/4433 , A61K31/453 , A61K31/4709 , A61K31/496 , A61K31/5377 , A61P31/12 , A61P31/18 , A61P43/00 , C07D311/54 , C07D311/56 , C07D311/74 , C07D311/92 , C07D311/94 , C07D405/04 , C07D405/12 , C07D407/06 , C07D407/08 , C07D409/06 , C07D409/08 , C07D409/12 , C07D413/12 , C07D417/10 , C07D417/12 , A61K31/35 , C07D311/20
CPC分类号： C07D405/04 , C07D311/56 , C07D311/74 , C07D311/94 , C07D405/12 , C07D407/06 , C07D409/06 , C07D409/12 , C07D413/12 , C07D417/12 , Y02P20/582
摘要： The present invention relates to compounds of formula I which are 4-hydroxy-benzopyran-2-ones and 4-hydroxy-cycloalkyl�b!pyran-2-ones useful for inhibiting a retrovirus in a mammalian cell infected with said retrovirus. ##STR1## Wherein R.sub.10 and R.sub.20 taken together are: ##STR2##
摘要翻译： PCT No.PCT / US94 / 00938 Sec。 371日期：1995年8月4日 102（e）日期1995年8月4日PCT 1994年2月3日PCT PCT。 WO94 / 18188 PCT出版物日期：1994年8月18日本发明涉及可用于抑制哺乳动物细胞感染的逆转录病毒的4-羟基 - 苯并吡喃-2-酮和4-羟基 - 环烷基[b]吡喃-2-酮的式I化合物表示逆转录病毒。其中R10和R20组合在一起： II III

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