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1. 发明授权

US06175476B1 Synthetic spin-valve device having high resistivity anti parallel coupling layer 有权
标题翻译：具有高电阻率反平行耦合层的合成自旋阀装置
公开(公告)号：US06175476B1
公开(公告)日：2001-01-16
申请号：US09135939
申请日：1998-08-18
申请人： Yiming Huai , Marcos Lederman
发明人： Yiming Huai , Marcos Lederman
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/00 , G11B5/012 , G11B5/3903 , G11B5/3929 , G11B2005/3996
摘要： The present invention provides an improved synthetic spin valve sensor having a high resistivity antiparallel coupling layer, typically formed of rhenium, between pinned layers. The spin valve sensor of the present invention may be formed having a layered structure as follows: pinning layer/first pinned layer/high resistivity antiparallel coupling layer/second pinned layer/metallic nonferromagnetic spacer layer/free layer. Capping and seed layers typically are also included. The high resistivity of the antiparallel coupling layer of the present invention reduces shunt current through that layer to improve the GMR effect of the spin valve while maintaining sufficient antiparallel coupling between the pinned layers. The antiparallel coupling layer of the present invention also provides improved thermal stability.
摘要翻译：本发明提供了一种改进的合成自旋阀传感器，其具有通常由铼形成的高电阻率反平行耦合层，在钉扎层之间。本发明的自旋阀传感器可以形成为如下层状结构：钉扎层/第一钉扎层/高电阻率反并联耦合层/第二钉扎层/金属非铁磁隔离层/自由层。通常还包括封盖和种子层。本发明的反并联耦合层的高电阻率降低了通过该层的分流电流，以改善自旋阀的GMR效应，同时保持被钉扎层之间的足够的反平行耦合。本发明的反平行耦合层还提供了改进的热稳定性。

2. 发明授权

US6137662A Magnetoresistive sensor with pinned SAL 失效
标题翻译：具有固定SAL的磁阻传感器
公开(公告)号：US6137662A
公开(公告)日：2000-10-24
申请号：US55730
申请日：1998-04-07
申请人： Yiming Huai , Daniel Nepela , Durga Ravipati , Marcos Lederman
发明人： Yiming Huai , Daniel Nepela , Durga Ravipati , Marcos Lederman
IPC分类号： G01R33/09 , G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G01R33/096 , G11B5/3903 , G11B5/3932 , G11B2005/3996
摘要： A magnetoresistive sensor including a magnetoresistive (MR) sensing element, a nonmagnetic layer ("spacer") contacting the magnetoresistive sensing element; a first antiferromagnetic (AFM) layer contacting the nonmagnetic layer such that the nonmagnetic layer is sandwiched between the magnetoresistive sensing element and the antiferromagnetic layer; a ferromagnetic soft adjacent layer (SAL) contacting the antiferromagnetic layer such that the antiferromagnetic layer is sandwiched between the nonmagnetic layer and the soft adjacent layer; and a second antiferromagnetic layer contacting the SAL such that the SAL is sandwiched between the first and second antiferromagnetic layers. The two antiferromagnetic layers provide a stronger pinning effect. In one embodiment of the invention, the magnetoresistive sensing element is an anisotropic magnetoresistive (AMR) sensing element comprising a soft ferromagnetic layer. In another embodiment of the invention, the magnetoresistive sensing element is giant magnetoresistive (GMR) sensing element comprising a plurality of layers. The bias scheme can be non-symmetric, or may be symmetric around the magnetoresistive sensing element. An exchange biased bilayer (AFM/SAL) can have a multilayered structure such as AFM/SAL/AFM/SAL. . . . In this configuration, the SAL layer can be thin, so that a high exchange field with a high resistance can be obtained.
摘要翻译：磁阻传感器包括磁阻（MR）感测元件，与磁阻感测元件接触的非磁性层（“间隔”）; 接触非磁性层的第一反铁磁（AFM）层，使得非磁性层夹在磁阻感测元件和反铁磁层之间; 接触反铁磁层的铁磁软相邻层（SAL），使得反铁磁层夹在非磁性层和软相邻层之间; 和与SAL接触的第二反铁磁层，使得SAL夹在第一和第二反铁磁性层之间。两个反铁磁层提供更强的钉扎效果。在本发明的一个实施例中，磁阻感测元件是包括软铁磁层的各向异性磁阻（AMR）感测元件。在本发明的另一个实施例中，磁阻感测元件是包括多个层的巨磁阻（GMR）感测元件。偏置方案可以是非对称的，或者可以围绕磁阻感测元件对称。交换偏压双层（AFM / SAL）可以具有多层结构，例如AFM / SAL / AFM / SAL。。。。在这种结构中，SAL层可以薄，从而可以获得具有高电阻的高交换场。

3. 发明申请

US20190148622A9 MEMORY SYSTEM HAVING THERMALLY STABLE PERPENDICULAR MAGNETO TUNNEL JUNCTION (MTJ) AND A METHOD OF MANUFACTURING SAME 审中-公开
公开(公告)号：US20190148622A9
公开(公告)日：2019-05-16
申请号：US13737897
申请日：2013-01-09
申请人： Yiming Huai , Yuchen Zhou , Jing Zhang , Roger Klas Malmhall , Ioan Tudosa , Rajiv Yadav Ranjan
发明人： Yiming Huai , Yuchen Zhou , Jing Zhang , Roger Klas Malmhall , Ioan Tudosa , Rajiv Yadav Ranjan
IPC分类号： H01L43/02
摘要： A spin-torque transfer magnetic random access memory (STTMRAM) element employed to store a state based on the magnetic orientation of a free layer, the STTMRAM element is made of a first perpendicular free layer (PFL) including a first perpendicular enhancement layer (PEL). The first PFL is formed on top of a seed layer. The STTMRAM element further includes a barrier layer formed on top of the first PFL and a second perpendicular reference layer (PRL) that has a second PEL, the second PRL is formed on top of the barrier layer. The STTMRAM element further includes a capping layer that is formed on top of the second PRL.

4. 发明授权

US09019758B2 Spin-transfer torque magnetic random access memory with perpendicular magnetic anisotropy multilayers 有权
标题翻译：具有垂直磁各向异性多层的自旋转矩磁性随机存取存储器
公开(公告)号：US09019758B2
公开(公告)日：2015-04-28
申请号：US13225338
申请日：2011-09-02
申请人： Yiming Huai , Jing Zhang , Rajiv Yadav Ranjan , Yuchen Zhou , Roger Klas Malmhall , Ioan Tudosa
发明人： Yiming Huai , Jing Zhang , Rajiv Yadav Ranjan , Yuchen Zhou , Roger Klas Malmhall , Ioan Tudosa
IPC分类号： G11C11/15 , G11C11/16 , H01L43/08
CPC分类号： H01L43/10 , B82Y40/00 , G11C11/15 , G11C11/16 , G11C11/161 , H01F10/3286 , H01F10/329 , H01F41/302 , H01L27/228 , H01L29/66984 , H01L43/02 , H01L43/08
摘要： A spin transfer torque magnetic random access memory (STTMRAM) element includes a composite fixed layer formed on top of a substrate and a tunnel layer formed upon the fixed layer and a composite free layer formed upon the tunnel barrier layer. The magnetization direction of each of the composite free layer and fixed layer being substantially perpendicular to the plane of the substrate. The composite layers are made of multiple repeats of a bi-layer unit which consists of a non-magnetic insulating layer and magnetic layer with thicknesses adjusted in a range that makes the magnetization having a preferred direction perpendicular to film plane.
摘要翻译：自旋传递转矩磁随机存取存储器（STTMRAM）元件包括形成在衬底上的复合固定层和形成在固定层上的隧道层和形成在隧道势垒层上的复合自由层。复合自由层和固定层中的每一个的磁化方向基本上垂直于衬底的平面。复合层由双层单元的多个重复构成，该双层单元由非磁性绝缘层和厚度调节在使磁化具有与膜平面垂直的优选方向的范围内的磁性层组成。

5. 发明授权

US08830736B2 Initialization method of a perpendicular magnetic random access memory (MRAM) device with a stable reference cell 有权
标题翻译：具有稳定参考单元的垂直磁随机存取存储器（MRAM）器件的初始化方法
公开(公告)号：US08830736B2
公开(公告)日：2014-09-09
申请号：US13360553
申请日：2012-01-27
申请人： Yuchen Zhou , Yiming Huai
发明人： Yuchen Zhou , Yiming Huai
IPC分类号： G11C11/00 , G11C11/16 , G11C11/56
CPC分类号： G11C11/16 , G11C11/161 , G11C11/5607 , Y10S977/933 , Y10S977/935
摘要： A method of initializing a magnetic random access memory (MRAM) element that is configured to store a state when electric current flows therethrough is disclosed. The MRAM element includes a first magnetic tunnel junction (MTJ) for storing a data bit and a second MTJ for storing a reference bit. The direction of magnetization of the FL is determinative of the data bit stored in the at least one MTJ and each MTJ further includes a magnetic reference layer (RL) having a magnetization with a direction that is perpendicular to the film plane, and a magnetic pinned layer (PL) having a magnetization with a direction that is perpendicular to the film plane. The direction of magnetization of the RL and the PL are anti-parallel relative to each other in the first MTJ. The direction of magnetization of the FL, the RL and the PL are parallel relative to each other in the second MTJ for storing reference bit.
摘要翻译：公开了一种初始化磁性随机存取存储器（MRAM）元件的方法，该磁性随机存取存储器被配置为在电流流经时存储状态。 MRAM元件包括用于存储数据位的第一磁性隧道结（MTJ）和用于存储参考位的第二MTJ。 FL的磁化方向决定了存储在至少一个MTJ中的数据位，并且每个MTJ还包括具有与膜平面垂直的方向具有磁化的磁参考层（RL），以及磁性固定层（PL）具有与膜平面垂直的方向的磁化。在第一MTJ中，RL和PL的磁化方向相对于彼此是反平行的。在第二MTJ中，FL，RL和PL的磁化方向相对于彼此平行，用于存储参考位。

6. 发明授权

US08704206B2 Memory device including transistor array with shared plate channel and method for making the same 有权
标题翻译：存储器件包括具有共享板通道的晶体管阵列及其制造方法
公开(公告)号：US08704206B2
公开(公告)日：2014-04-22
申请号：US13356633
申请日：2012-01-23
申请人： Kimihiro Satoh , Yiming Huai , Jing Zhang
发明人： Kimihiro Satoh , Yiming Huai , Jing Zhang
IPC分类号： H01L29/06 , H01L47/00 , H01L29/78 , H01L21/336
CPC分类号： H01L45/06 , H01L27/2436 , H01L27/2463 , H01L45/08 , H01L45/1233 , H01L45/144 , H01L45/146 , H01L45/147 , H01L45/16
摘要： The present invention relates to memory devices incorporating therein a novel memory cell architecture which includes an array of selection transistors sharing a common channel and method for making the same. A memory device comprises a semiconductor substrate having a first type conductivity, a plurality of drain regions and a common source region separated by a common plate channel in the substrate, and a selection gate disposed on top of the plate channel with a gate dielectric layer interposed therebetween. The plurality of drain regions and the common source region have a second type conductivity opposite to the first type provided in the substrate.
摘要翻译：本发明涉及其中结合有新颖的存储单元架构的存储器件，其包括共享公共通道的选择晶体管阵列及其制造方法。存储器件包括具有第一类型导电性的半导体衬底，多个漏极区域和由衬底中的公共板沟道分开的公共源极区域，以及选择栅极，其设置在板沟道的顶部，栅极介电层插入之间。多个漏极区域和公共源极区域具有与设置在衬底中的第一类型相反的第二类型导电性。

7. 发明授权

US08565010B2 Magnetic random access memory with field compensating layer and multi-level cell 有权
标题翻译：具有场补偿层和多级单元的磁随机存取存储器
公开(公告)号：US08565010B2
公开(公告)日：2013-10-22
申请号：US13099321
申请日：2011-05-02
申请人： Yuchen Zhou , Yiming Huai , Rajiv Yadav Ranjan , Jing Zhang
发明人： Yuchen Zhou , Yiming Huai , Rajiv Yadav Ranjan , Jing Zhang
IPC分类号： G11C11/15
CPC分类号： G11C11/16 , G11C11/161 , H01L43/02
摘要： A spin toque transfer magnetic random access memory (STTMRAM) element comprises a reference layer formed on a substrate, with a fixed perpendicular magnetic component. A junction layer is formed on top of the reference layer and a free layer is formed on top of the junction layer with a perpendicular magnetic orientation, at substantially its center of the free layer and switchable. A spacer layer is formed on top of the free layer and a fixed layer is formed on top of the spacer layer, the fixed layer has a fixed perpendicular magnetic component opposite to that of the reference layer. The magnetic orientation of the free layer switches relative to that of the fixed layer. The perpendicular magnetic components of the fixed layer and the reference layer substantially cancel each other and the free layer has an in-plane edge magnetization field.
摘要翻译：自旋转矩磁性随机存取存储器（STTMRAM）元件包括形成在基板上的参考层，具有固定的垂直磁性分量。接合层形成在参考层的顶部，并且在接合层的顶部上以自由层的大致中心位置处具有垂直磁性取向形成自由层。间隔层形成在自由层的顶部，固定层形成在间隔层的顶部，固定层具有与基准层相反的固定的垂直磁性部件。自由层的磁性取向相对于固定层的磁性取向。固定层和参考层的垂直磁性分量基本相互抵消，自由层具有面内边缘磁化场。

8. 发明授权

US08492860B2 Magnetic random access memory with switching assist layer 有权
标题翻译：具有开关辅助层的磁性随机存取存储器
公开(公告)号：US08492860B2
公开(公告)日：2013-07-23
申请号：US13289372
申请日：2011-11-04
申请人： Yuchen Zhou , Yiming Huai , Jing Zhang , Rajiv Yadav Ranjan , Roger Klas Malmhall
发明人： Yuchen Zhou , Yiming Huai , Jing Zhang , Rajiv Yadav Ranjan , Roger Klas Malmhall
IPC分类号： H01L29/82
CPC分类号： H01L43/02 , G11C11/16 , G11C11/161 , G11C11/1675 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01F10/329 , H01L43/08 , H01L43/10
摘要： A STTMRAM element includes a magnetization layer made of a first free layer and a second free layer, separated by a non-magnetic separation layer (NMSL), with the first and second free layers each having in-plane magnetizations that act on each other through anti-parallel coupling. The direction of the magnetization of the first and second free layers each is in-plane prior to the application of electrical current to the STTMRAM element and thereafter, the direction of magnetization of the second free layer becomes substantially titled out-of-plane and the direction of magnetization of the first free layer switches. Upon electrical current being discontinued to the STTMRAM element, the direction of magnetization of the second free layer remains in a direction that is substantially opposite to that of the first free layer.
摘要翻译： STTMRAM元件包括由非磁性分离层（NMSL）隔开的由第一自由层和第二自由层制成的磁化层，第一和第二自由层各自具有彼此作用的面内磁化反平行耦合。在向STTMRAM元件施加电流之前，第一自由层和第二自由层的磁化方向各自在同一平面内，此后，第二自由层的磁化方向基本上标称为平面外，并且第一自由层开关的磁化方向。当电流停止到STTMRAM元件时，第二自由层的磁化方向保持在与第一自由层基本相反的方向上。

9. 发明申请

US20130021842A1 INITIALIZATION METHOD OF A PERPENDICULAR MAGNETIC RANDOM ACCESS MEMORY (MRAM) DEVICE WITH A STABLE REFERENCE CELL 有权
标题翻译：具有稳定参考电压的全息磁性随机存取存储器（MRAM）器件的初始化方法
公开(公告)号：US20130021842A1
公开(公告)日：2013-01-24
申请号：US13360553
申请日：2012-01-27
申请人： Yuchen Zhou , Yiming Huai
发明人： Yuchen Zhou , Yiming Huai
IPC分类号： G11C11/16
CPC分类号： G11C11/16 , G11C11/161 , G11C11/5607 , Y10S977/933 , Y10S977/935
摘要： A method of initializing a magnetic random access memory (MRAM) element that is configured to store a state when electric current flows therethrough is disclosed. The MRAM element includes a first magnetic tunnel junction (MTJ) for storing a data bit and a second MTJ for storing a reference bit. Each MTJ further includes a magnetic reference layer (RL) having a magnetization with a direction that is perpendicular to the film plane, and a magnetic pinned layer (PL) having a magnetization with a direction that is perpendicular to the film plane. The direction of magnetization of the RL and the PL are anti-parallel relative to each other in the first MTJ. The direction of magnetization of the FL, the RL and the PL are parallel relative to each other in the second MTJ for storing reference bit.
摘要翻译：公开了一种初始化磁性随机存取存储器（MRAM）元件的方法，该磁性随机存取存储器被配置为在电流流经时存储状态。 MRAM元件包括用于存储数据位的第一磁性隧道结（MTJ）和用于存储参考位的第二MTJ。每个MTJ还包括具有垂直于膜平面的方向的磁化的磁参考层（RL）和具有与膜平面垂直的方向的磁化的磁性固定层（PL）。在第一MTJ中，RL和PL的磁化方向相对于彼此是反平行的。在第二MTJ中，FL，RL和PL的磁化方向相对于彼此平行，用于存储参考位。

10. 发明申请

US20130021841A1 PERPENDICULAR MAGNETIC RANDOM ACCESS MEMORY (MRAM) DEVICE WITH A STABLE REFERENCE CELL 有权
标题翻译：具有稳定参考电压的全频磁性随机存取存储器（MRAM）器件
公开(公告)号：US20130021841A1
公开(公告)日：2013-01-24
申请号：US13360524
申请日：2012-01-27
申请人： Yuchen Zhou , Yiming Huai
发明人： Yuchen Zhou , Yiming Huai
IPC分类号： G11C11/16
CPC分类号： G11C11/16 , G11C11/161 , G11C11/5607 , Y10S977/933 , Y10S977/935
摘要： A magnetic random access memory (MRAM) element is configured to store a state when electric current flows and includes a first magnetic tunnel junction (MTJ) for storing a data bit and a second MTJ for storing a reference bit. The direction of magnetization of the FL is determinative of the data bit stored in the at least one MTJ. Further, the MTJ includes a magnetic reference layer (RL) having a magnetization with a direction that is perpendicular to the film plane, and a magnetic pinned layer (PL) having a magnetization with a direction that is perpendicular to the film plane. The direction of magnetization of the RL and the PL are anti-parallel relative to each other in the first MTJ. The direction of magnetization of the FL, the RL and the PL are parallel relative to each other in the second MTJ.
摘要翻译：磁性随机存取存储器（MRAM）元件被配置为存储电流流动时的状态，并且包括用于存储数据位的第一磁性隧道结（MTJ）和用于存储参考位的第二MTJ。 FL的磁化方向决定了存储在至少一个MTJ中的数据位。此外，MTJ包括具有与膜平面垂直的方向的磁化的磁性参考层（RL）和具有与膜平面垂直的方向具有磁化的磁性固定层（PL）。在第一MTJ中，RL和PL的磁化方向相对于彼此是反平行的。 FL，RL和PL的磁化方向在第二MTJ中相对于彼此平行。

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