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1. 发明授权

US6137662A Magnetoresistive sensor with pinned SAL 失效
标题翻译：具有固定SAL的磁阻传感器
公开(公告)号：US6137662A
公开(公告)日：2000-10-24
申请号：US55730
申请日：1998-04-07
申请人： Yiming Huai , Daniel Nepela , Durga Ravipati , Marcos Lederman
发明人： Yiming Huai , Daniel Nepela , Durga Ravipati , Marcos Lederman
IPC分类号： G01R33/09 , G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G01R33/096 , G11B5/3903 , G11B5/3932 , G11B2005/3996
摘要： A magnetoresistive sensor including a magnetoresistive (MR) sensing element, a nonmagnetic layer ("spacer") contacting the magnetoresistive sensing element; a first antiferromagnetic (AFM) layer contacting the nonmagnetic layer such that the nonmagnetic layer is sandwiched between the magnetoresistive sensing element and the antiferromagnetic layer; a ferromagnetic soft adjacent layer (SAL) contacting the antiferromagnetic layer such that the antiferromagnetic layer is sandwiched between the nonmagnetic layer and the soft adjacent layer; and a second antiferromagnetic layer contacting the SAL such that the SAL is sandwiched between the first and second antiferromagnetic layers. The two antiferromagnetic layers provide a stronger pinning effect. In one embodiment of the invention, the magnetoresistive sensing element is an anisotropic magnetoresistive (AMR) sensing element comprising a soft ferromagnetic layer. In another embodiment of the invention, the magnetoresistive sensing element is giant magnetoresistive (GMR) sensing element comprising a plurality of layers. The bias scheme can be non-symmetric, or may be symmetric around the magnetoresistive sensing element. An exchange biased bilayer (AFM/SAL) can have a multilayered structure such as AFM/SAL/AFM/SAL. . . . In this configuration, the SAL layer can be thin, so that a high exchange field with a high resistance can be obtained.
摘要翻译：磁阻传感器包括磁阻（MR）感测元件，与磁阻感测元件接触的非磁性层（“间隔”）; 接触非磁性层的第一反铁磁（AFM）层，使得非磁性层夹在磁阻感测元件和反铁磁层之间; 接触反铁磁层的铁磁软相邻层（SAL），使得反铁磁层夹在非磁性层和软相邻层之间; 和与SAL接触的第二反铁磁层，使得SAL夹在第一和第二反铁磁性层之间。两个反铁磁层提供更强的钉扎效果。在本发明的一个实施例中，磁阻感测元件是包括软铁磁层的各向异性磁阻（AMR）感测元件。在本发明的另一个实施例中，磁阻感测元件是包括多个层的巨磁阻（GMR）感测元件。偏置方案可以是非对称的，或者可以围绕磁阻感测元件对称。交换偏压双层（AFM / SAL）可以具有多层结构，例如AFM / SAL / AFM / SAL。。。。在这种结构中，SAL层可以薄，从而可以获得具有高电阻的高交换场。

2. 发明授权

US6163426A Magnetoresistive head with minimal electromigration 失效
标题翻译：具有最小电迁移的磁阻头
公开(公告)号：US6163426A
公开(公告)日：2000-12-19
申请号：US112173
申请日：1998-07-08
申请人： Daniel Nepela , Chung F Lam
发明人： Daniel Nepela , Chung F Lam
IPC分类号： G11B5/39 , G11B5/00 , G11B5/012 , G11B5/02 , G11B5/035 , G11B5/09 , G11B5/40 , G11B5/455 , G11B5/49 , G11B19/04 , G11B5/03
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/012 , G11B5/02 , G11B5/035 , G11B5/09 , G11B5/40 , G11B5/455 , G11B5/4923 , G11B19/04 , G11B2005/0008 , G11B2005/0016 , G11B2005/0018 , G11B2005/3996
摘要： A magnetoresistive head achieves maximum signal output with minimal electromigration by using a magnetoresistive element through which a unidirectional sense current is flown. Periodically, a control circuit determines whether one or more switching criteria have been met, and applies a counter-directional compensation current in the magnetoresistive element when the switching criteria are met, thus suppressing electromigration in the magnetoresistive element in the direction of said sense current. In a preferred embodiment, the compensation current is applied during a quiescence period. In another embodiment a continuous unidirectional sense current is flown through the magnetoresistive element, and the control circuit suspends the sense current in the magnetoresistive element for a period of time when one or more switching criteria have been met, so as to prevent atomic excursion beyond one atomic diameter, such that electromigration in the magnetoresistive element is substantially reduced in the direction of the sense current.
摘要翻译：磁阻头通过使用单向感测电流流过的磁阻元件，以最小的电迁移实现最大信号输出。周期性地，控制电路确定是否满足了一个或多个切换标准，并且当满足切换标准时在磁阻元件中施加相反方向的补偿电流，从而抑制磁阻元件沿所述感测电流的方向的电迁移。在优选实施例中，在静止期间施加补偿电流。在另一个实施例中，持续的单向感测电流流过磁阻元件，并且控制电路在一个或多个切换标准已被满足的时间段内暂停磁阻元件中的感测电流，以便防止原子偏移超过一个原子直径，使得磁阻元件中的电迁移在感测电流的方向上显着减小。

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