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1. 发明申请

US20090258159A1 NOVEL TREATMENT FOR MASK SURFACE CHEMICAL REDUCTION 审中-公开
标题翻译：用于掩模表面化学还原的新型处理
公开(公告)号：US20090258159A1
公开(公告)日：2009-10-15
申请号：US12100822
申请日：2008-04-10
申请人： Yih-Chen Su , Ting-Hao Hsu , Sheng-Chi Chin , Heng-Jen Lee , Hung Chang Hsieh , Yao-Ching Ku
发明人： Yih-Chen Su , Ting-Hao Hsu , Sheng-Chi Chin , Heng-Jen Lee , Hung Chang Hsieh , Yao-Ching Ku
IPC分类号： B08B6/00 , B05D3/06
CPC分类号： G03F1/82
摘要： A method includes forming an absorption material layer on a mask; applying a plasma treatment to the mask to reduce chemical contaminants after the forming of the absorption material layer; performing a chemical cleaning process of the mask; and performing a gas injection to the mask.
摘要翻译：一种方法包括在掩模上形成吸收材料层; 对掩模施加等离子体处理以在形成吸收材料层之后减少化学污染物; 进行面罩的化学清洗处理; 并对所述面罩进行气体注入。

2. 发明授权

US08656318B2 System and method for combined intraoverlay metrology and defect inspection 有权
标题翻译：组合内部测量和缺陷检查的系统和方法
公开(公告)号：US08656318B2
公开(公告)日：2014-02-18
申请号：US13464116
申请日：2012-05-04
申请人： Hsin-Chang Lee , Chia-Jen Chen , Yeh Lee-Chih , Sheng-Chi Chin , Ting-Hao Hsu , Anthony Yen
发明人： Hsin-Chang Lee , Chia-Jen Chen , Yeh Lee-Chih , Sheng-Chi Chin , Ting-Hao Hsu , Anthony Yen
IPC分类号： G06F17/50
CPC分类号： G03F1/84 , G03F1/72
摘要： A method and system for measuring layer overlay and for inspecting a mask for defects unrelated to overlay utilizing a singe comprehensive tool is disclosed. An exemplary method includes receiving a mask design database that corresponds to a mask and has a die area with a mask database feature. A mask image of the mask is received, and a comprehensive inspection system compares the mask image to the mask design database in order to detect mask defects that are not related to layer alignment. The system produces mask defect information corresponding to the mask defects. The comprehensive inspection system also compares the mask image to the mask design database to determine a database-to-mask offset. From the database-to-mask offset, a mask overlay characteristic is determined.
摘要翻译：公开了一种用于测量层叠覆盖层的方法和系统，并且用于使用单个综合工具来检查与覆盖无关的缺陷的掩模。一种示例性方法包括接收对应于掩模并且具有掩模数据库特征的管芯区域的掩模设计数据库。接收掩模的掩模图像，并且综合检查系统将掩模图像与掩模设计数据库进行比较，以便检测与层对齐无关的掩模缺陷。系统产生对应于掩模缺陷的掩模缺陷信息。综合检查系统还将掩模图像与掩模设计数据库进行比较，以确定数据库对掩模偏移量。从数据库到掩码偏移，确定掩模覆盖特性。

3. 发明授权

US08691476B2 EUV mask and method for forming the same 有权
标题翻译： EUV掩模及其形成方法
公开(公告)号：US08691476B2
公开(公告)日：2014-04-08
申请号：US13328166
申请日：2011-12-16
申请人： Ching-Fang Yu , Ting-Hao Hsu , Sheng-Chi Chin
发明人： Ching-Fang Yu , Ting-Hao Hsu , Sheng-Chi Chin
IPC分类号： G03F1/24 , G03F1/22
CPC分类号： G03F1/46 , B82Y10/00 , B82Y40/00 , G03F1/24 , G03F1/54 , G03F1/58
摘要： An extreme ultraviolet (EUV) mask can be used in lithography, such as is used in the fabrication of a semiconductor wafer. The EUV mask includes a low thermal expansion material (LTEM) substrate and a reflective multilayer (ML) disposed thereon. A capping layer is disposed on the reflective ML and a patterned absorption layer disposed on the capping layer. The pattern includes an antireflection (ARC) type pattern.
摘要翻译：极光紫外（EUV）掩模可以用在光刻中，例如用于制造半导体晶片的方法。 EUV掩模包括低热膨胀材料（LTEM）基板和设置在其上的反射多层（ML）。覆盖层设置在反射ML上，并且设置在覆盖层上的图案化吸收层。该图案包括抗反射（ARC）型图案。

4. 发明授权

US08598042B1 Device manufacturing and cleaning method 有权
公开(公告)号：US08598042B1
公开(公告)日：2013-12-03
申请号：US13486243
申请日：2012-06-01
申请人： Chi-Lun Lu , Kuan-Wen Lin , Ching-Wei Shen , Ting-Hao Hsu , Sheng-Chi Chin
发明人： Chi-Lun Lu , Kuan-Wen Lin , Ching-Wei Shen , Ting-Hao Hsu , Sheng-Chi Chin
IPC分类号： H01L21/302
CPC分类号： H01L21/311 , G03F1/00 , G03F7/42 , G03F7/423 , G03F7/425 , H01L21/02057
摘要： A method of manufacturing is disclosed. An exemplary method includes providing a substrate and forming one or more layers over the substrate. The method further includes forming a surface layer over the one or more layers. The method further includes performing a patterning process on the surface layer thereby forming a pattern on the surface layer. The method further includes performing a cleaning process using a cleaning solution to clean a top surface of the substrate. The cleaning solution includes tetra methyl ammonium hydroxide (TMAH), hydrogen peroxide (H2O2) and water (H2O).

5. 发明申请

US20130298088A1 System and Method for Combined Intraoverlay and Defect Inspection 有权
标题翻译：组合内部和缺陷检查的系统和方法
公开(公告)号：US20130298088A1
公开(公告)日：2013-11-07
申请号：US13464116
申请日：2012-05-04
申请人： Hsin-Chang Lee , Chia-Jen Chen , Yeh Lee-Chih , Sheng-Chi Chin , Ting-Hao Hsu , Anthony Yen
发明人： Hsin-Chang Lee , Chia-Jen Chen , Yeh Lee-Chih , Sheng-Chi Chin , Ting-Hao Hsu , Anthony Yen
IPC分类号： G06F17/50
CPC分类号： G03F1/84 , G03F1/72
摘要： A method and system for measuring layer overlay and for inspecting a mask for defects unrelated to overlay utilizing a singe comprehensive tool is disclosed. An exemplary method includes receiving a mask design database that corresponds to a mask and has a die area with a mask database feature. A mask image of the mask is received, and a comprehensive inspection system compares the mask image to the mask design database in order to detect mask defects that are not related to layer alignment. The system produces mask defect information corresponding to the mask defects. The comprehensive inspection system also compares the mask image to the mask design database to determine a database-to-mask offset. From the database-to-mask offset, a mask overlay characteristic is determined.
摘要翻译：公开了一种用于测量层叠覆盖层的方法和系统，并且用于使用单个综合工具来检查与覆盖无关的缺陷的掩模。一种示例性方法包括接收对应于掩模并且具有掩模数据库特征的管芯区域的掩模设计数据库。接收掩模的掩模图像，并且综合检查系统将掩模图像与掩模设计数据库进行比较，以便检测与层对齐无关的掩模缺陷。系统产生对应于掩模缺陷的掩模缺陷信息。综合检查系统还将掩模图像与掩模设计数据库进行比较，以确定数据库对掩模偏移量。从数据库到掩码偏移，确定掩模覆盖特性。

6. 发明申请

US20130287287A1 METHOD AND APPARATUS FOR DEFECT IDENTIFICATION 有权
标题翻译：缺陷识别的方法和装置
公开(公告)号：US20130287287A1
公开(公告)日：2013-10-31
申请号：US13455584
申请日：2012-04-25
申请人： Mei-Chun Lin , Ching-Fang Yu , Ting-Hao Hsu , Sheng-Chi Chin
发明人： Mei-Chun Lin , Ching-Fang Yu , Ting-Hao Hsu , Sheng-Chi Chin
IPC分类号： G06K9/00
CPC分类号： G06T7/001 , G06K9/48 , G06T2207/10061 , G06T2207/20224 , G06T2207/30148
摘要： A method of identifying defects including producing, with an imaging system, an original image of a fabricated article having a feature thereon, the feature having an intended height and extracting a contour image from the original image, the contour image having an outline of those portions of the feature having a height approximate to the intended height. The method also includes producing a simulated image of the article based upon the contour and creating a defect image based on the differences between the simulated image and the original image, the defect image including any portions of the feature having a height less than the intended height.
摘要翻译：一种识别缺陷的方法，包括用成像系统制造具有其特征的制品的原始图像，该特征具有预期高度并从原始图像提取轮廓图像，轮廓图像具有这些部分的轮廓的特征具有近似于预期高度的高度。该方法还包括基于轮廓产生物品的模拟图像，并且基于模拟图像和原始图像之间的差异创建缺陷图像，缺陷图像包括高度小于预期高度的特征的任何部分。

7. 发明授权

US08737717B2 Method and apparatus for defect identification 有权
标题翻译：缺陷识别方法和装置
公开(公告)号：US08737717B2
公开(公告)日：2014-05-27
申请号：US13455584
申请日：2012-04-25
申请人： Mei-Chun Lin , Ching-Fang Yu , Ting-Hao Hsu , Sheng-Chi Chin
发明人： Mei-Chun Lin , Ching-Fang Yu , Ting-Hao Hsu , Sheng-Chi Chin
IPC分类号： G06K9/00
CPC分类号： G06T7/001 , G06K9/48 , G06T2207/10061 , G06T2207/20224 , G06T2207/30148
摘要： A method of identifying defects including producing, with an imaging system, an original image of a fabricated article having a feature thereon, the feature having an intended height and extracting a contour image from the original image, the contour image having an outline of those portions of the feature having a height approximate to the intended height. The method also includes producing a simulated image of the article based upon the contour and creating a defect image based on the differences between the simulated image and the original image, the defect image including any portions of the feature having a height less than the intended height.
摘要翻译：一种识别缺陷的方法，包括用成像系统制造具有其特征的制品的原始图像，该特征具有预期高度并从原始图像提取轮廓图像，轮廓图像具有这些部分的轮廓的特征具有近似于预期高度的高度。该方法还包括基于轮廓产生物品的模拟图像，并且基于模拟图像和原始图像之间的差异创建缺陷图像，缺陷图像包括高度小于预期高度的特征的任何部分。

8. 发明申请

US20130323931A1 DEVICE MANUFACTURING AND CLEANING METHOD 有权
标题翻译：装置制造和清洁方法
公开(公告)号：US20130323931A1
公开(公告)日：2013-12-05
申请号：US13486243
申请日：2012-06-01
申请人： Chi-Lun Lu , Kuan-Wen Lin , Ching-Wei Shen , Ting-Hao Hsu , Sheng-Chi Chin
发明人： Chi-Lun Lu , Kuan-Wen Lin , Ching-Wei Shen , Ting-Hao Hsu , Sheng-Chi Chin
IPC分类号： H01L21/311
CPC分类号： H01L21/311 , G03F1/00 , G03F7/42 , G03F7/423 , G03F7/425 , H01L21/02057
摘要： A method of manufacturing is disclosed. An exemplary method includes providing a substrate and forming one or more layers over the substrate. The method further includes forming a surface layer over the one or more layers. The method further includes performing a patterning process on the surface layer thereby forming a pattern on the surface layer. The method further includes performing a cleaning process using a cleaning solution to clean a top surface of the substrate. The cleaning solution includes tetra methyl ammonium hydroxide (TMAH), hydrogen peroxide (H2O2) and water (H2O).
摘要翻译：公开了一种制造方法。一种示例性方法包括提供衬底并在衬底上形成一个或多个层。该方法还包括在一个或多个层上形成表面层。该方法还包括在表面层上进行图案化处理，从而在表面层上形成图案。该方法还包括使用清洁溶液进行清洁处理以清洁基板的顶表面。清洗溶液包括四甲基氢氧化铵（TMAH），过氧化氢（H 2 O 2）和水（H 2 O）。

9. 发明申请

US20130157177A1 EUV MASK AND METHOD FOR FORMING THE SAME 有权
标题翻译： EUV掩模及其形成方法
公开(公告)号：US20130157177A1
公开(公告)日：2013-06-20
申请号：US13328166
申请日：2011-12-16
申请人： Ching-Fang Yu , Ting-Hao Hsu , Sheng-Chi Chin
发明人： Ching-Fang Yu , Ting-Hao Hsu , Sheng-Chi Chin
IPC分类号： G03F1/24
CPC分类号： G03F1/46 , B82Y10/00 , B82Y40/00 , G03F1/24 , G03F1/54 , G03F1/58
摘要： An extreme ultraviolet (EUV) mask can be used in lithography, such as is used in the fabrication of a semiconductor wafer. The EUV mask includes a low thermal expansion material (LTEM) substrate and a reflective multilayer (ML) disposed thereon. A capping layer is disposed on the reflective ML and a patterned absorption layer disposed on the capping layer. The pattern includes an antireflection (ARC) type pattern.
摘要翻译：极光紫外（EUV）掩模可以用在光刻中，例如用于制造半导体晶片的方法。 EUV掩模包括低热膨胀材料（LTEM）基板和设置在其上的反射多层（ML）。覆盖层设置在反射ML上，并且设置在覆盖层上的图案化吸收层。该图案包括抗反射（ARC）型图案。

10. 发明申请

US20130322736A1 METHOD AND APPARATUS FOR EFFICIENT DEFECT INSPECTION 有权
标题翻译：用于有效缺陷检查的方法和装置
公开(公告)号：US20130322736A1
公开(公告)日：2013-12-05
申请号：US13484968
申请日：2012-05-31
申请人： Ching-Fang Yu , Ting-Hao Hsu
发明人： Ching-Fang Yu , Ting-Hao Hsu
IPC分类号： G06K9/46 , G06K9/00
CPC分类号： G06T7/001 , G06T2207/10061 , G06T2207/30148
摘要： A method of inspecting fabricated articles includes receiving a fabricated article to be inspected for defects, the fabricated article having a pattern thereon, and the pattern being based on a pattern design and creating a rule set for defining critical regions of the pattern as represented in the pattern design, the critical regions being regions in which defects are more likely to be found during inspection. The method also includes applying the rule set to the pattern design to identify a critical region of the pattern on the fabricated article and a non-critical region of the pattern on the fabricated article. Further, the method includes inspecting the non-critical region of the pattern on the fabricated article for defects at first resolution and inspecting the critical region of the pattern on the fabricated article for defects at a second resolution higher than the first resolution.
摘要翻译：检查制造制品的方法包括接收待检查的制造制品的缺陷，制造的制品在其上具有图案，并且所述图案基于图案设计并且创建用于定义所述图案的临界区域的规则集，如模式设计，关键区域是在检查期间更容易发现缺陷的区域。该方法还包括将规则集合应用于图案设计以识别制造制品上的图案的关键区域和在制造的制品上的图案的非关键区域。此外，该方法包括在第一分辨率下检查制造物品上的图案的非关键区域，并以高于第一分辨率的第二分辨率检查制造物品上的图案的关键区域的缺陷。

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