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1. 发明申请

US20140038086A1 Phase Shift Mask for Extreme Ultraviolet Lithography and Method of Fabricating Same 有权
标题翻译：用于极紫外光刻的相移掩模及其制造方法
公开(公告)号：US20140038086A1
公开(公告)日：2014-02-06
申请号：US13564198
申请日：2012-08-01
申请人： Chih-Tsung Shih , Pei-Cheng Hsu , Shinn-Sheng Yu , Tsiao-Chen Wu , Yen-Cheng Lu , Shu-Hao Chang , Chia-Jen Chen , Hsin-Chang Lee , Anthony Yen
发明人： Chih-Tsung Shih , Pei-Cheng Hsu , Shinn-Sheng Yu , Tsiao-Chen Wu , Yen-Cheng Lu , Shu-Hao Chang , Chia-Jen Chen , Hsin-Chang Lee , Anthony Yen
IPC分类号： G03F1/24 , G03F7/20
CPC分类号： G03F1/26 , G03F1/24
摘要： A mask and method of fabricating same are disclosed. In an example, a mask includes a substrate, a reflective multilayer coating disposed over the substrate, an Ag2O absorber layer disposed over the reflective multilayer coating, and a tantalum-containing absorber layer disposed over the Ag2O absorber layer. The tantalum-containing absorber layer is disposed over the Ag2O absorber layer outside a mask image region of the mask, such that the mask image region of the mask is free of the tantalum-containing absorber layer. In an example, the tantalum-containing absorber layer is disposed over the Ag2O absorber layer adjacent to the mask image region.
摘要翻译：公开了一种掩模及其制造方法。在一个示例中，掩模包括基板，设置在基板上的反射多层涂层，设置在反射多层涂层上的Ag 2 O吸收层，以及设置在Ag 2 O吸收层上的含钽吸收层。含钽吸收层设置在掩模的掩模图像区域外侧的Ag 2 O吸收体层上，使得掩模的掩模图像区域不含含钽吸收层。在一个实例中，含钽吸收层设置在与掩模图像区域相邻的Ag 2 O吸收层上。

2. 发明申请

US20130337370A1 PHOTOMASK AND METHOD FOR FORMING THE SAME 有权
标题翻译：光刻胶及其形成方法
公开(公告)号：US20130337370A1
公开(公告)日：2013-12-19
申请号：US13495291
申请日：2012-06-13
申请人： Hsin-Chang Lee , Pei-Cheng Hsu , Chia-Jen Chen , Anthony Yen
发明人： Hsin-Chang Lee , Pei-Cheng Hsu , Chia-Jen Chen , Anthony Yen
IPC分类号： G03F1/44 , G03F1/76 , G03F7/20 , G03F1/68
CPC分类号： G03F1/76 , G03F1/24 , G03F1/38 , G03F1/44 , G03F1/50 , G03F1/68 , G03F1/70 , G06F17/5068
摘要： A photomask having a machine-readable identifying mark and suitable for manufacturing integrated circuit devices and a method for forming the photomask and identifying mark are disclosed. An exemplary embodiment includes receiving a design layout corresponding to a pattern to be formed on a photomask blank. A specification of an identifying code is also received along with the photomask blank, which includes a substrate, a reflective layer, and an absorptive layer. A first patterning is performed using the design layout. A second patterning is performed using the specification of the identifying code.
摘要翻译：公开了一种具有机读识别标记并适于制造集成电路器件的光掩模和用于形成光掩模和识别标记的方法。示例性实施例包括接收与在光掩模坯件上形成的图案相对应的设计布局。识别码的规格也与包括基底，反射层和吸收层的光掩模坯料一起被接收。使用设计布局进行第一图案化。使用识别码的说明来执行第二图案化。

3. 发明授权

US08589828B2 Reduce mask overlay error by removing film deposited on blank of mask 有权
标题翻译：通过去除沉积在面罩空白上的薄膜来减少掩模覆盖误差
公开(公告)号：US08589828B2
公开(公告)日：2013-11-19
申请号：US13398923
申请日：2012-02-17
申请人： Hsin-Chang Lee , Chia-Jen Chen , Lee-Chih Yeh , Anthony Yen
发明人： Hsin-Chang Lee , Chia-Jen Chen , Lee-Chih Yeh , Anthony Yen
IPC分类号： G06F17/50 , G06F19/00 , G21K5/00 , G03F1/00 , G03F1/22 , G03F1/20 , G03F1/42
CPC分类号： G03F1/00 , G03F1/20 , G03F1/22 , G03F1/36 , G03F1/42 , G03F1/70 , G06F17/5081 , G06F19/00 , G21K5/00
摘要： A method for reducing layer overlay errors by synchronizing the density of mask material in the frame area across the masks in a set is disclosed. An exemplary method includes creating a mask design database corresponding to a mask and containing a die area with one or more dies and a frame area outside the die area. Fiducial features within the frame area are identified, and from the fiducial features, an idle frame area is identified. A reference mask design, which corresponds to a reference mask configured to be aligned with the mask, is used to determine a reference density for the idle frame area. The idle frame area of the mask design database is modified to correspond to the reference density. The modified mask design database is then available for further use including manufacturing the mask.
摘要翻译：公开了一种通过使一组中的掩模之间的框区域中的掩模材料的密度同步来减少层重叠误差的方法。一种示例性方法包括创建对应于掩模并且包含具有一个或多个管芯的管芯区域和管芯区域外部的框架区域的掩模设计数据库。识别帧区域内的基准特征，并从基准特征中识别空闲帧区域。使用对应于被配置为与掩模对准的参考掩模的参考掩模设计来确定空闲帧区域的参考密度。修改掩模设计数据库的空闲帧区域以对应于参考密度。然后，修改的掩模设计数据库可用于进一步使用，包括制造掩模。

4. 发明授权

US07862962B2 Integrated circuit layout design 有权
标题翻译：集成电路布局设计
公开(公告)号：US07862962B2
公开(公告)日：2011-01-04
申请号：US12356405
申请日：2009-01-20
申请人： Ming-Feng Shieh , Shinn-Sheng Yu , Anthony Yen , Shao-Ming Yu , Chang-Yun Chang , Jeff J. Xu , Clement Hsingjen Wann
发明人： Ming-Feng Shieh , Shinn-Sheng Yu , Anthony Yen , Shao-Ming Yu , Chang-Yun Chang , Jeff J. Xu , Clement Hsingjen Wann
IPC分类号： G03F9/00 , G03C5/00
CPC分类号： H01L27/0203 , G03F1/00 , G03F1/36 , H01L21/3086 , H01L21/823431 , H01L29/66795
摘要： Provided is a method including layout design of an integrated circuit. A first pattern is provided. The first pattern includes an array of dummy line features and a plurality of spacer elements abutting the dummy line features. A second pattern is provided. The second pattern defines an active region of an integrated circuit device. An edge spacer element of the active region is determined. A dummy line feature of the array of dummy line features is biased (e.g., increased in width), the dummy line feature is adjacent an edge spacer element.
摘要翻译：提供了一种包括集成电路的布局设计的方法。提供了第一种模式。第一图案包括虚线特征的阵列和与虚线特征相邻的多个间隔元件。提供了第二种模式。第二图案定义了集成电路器件的有源区。确定有源区的边缘间隔元件。假线特征阵列的虚线特征被偏置（例如，宽度增加），虚线特征与边缘间隔元件相邻。

5. 发明授权

US06784005B2 Photoresist reflow for enhanced process window for random, isolated, semi-dense, and other non-dense contacts 有权
标题翻译：用于增强工艺窗口的光刻胶回流，用于随机，隔离，半密度和其他非致密接触
公开(公告)号：US06784005B2
公开(公告)日：2004-08-31
申请号：US10078064
申请日：2002-02-16
申请人： Huan-Tai Lin , Shinn-Sheng Yu , Anthony Yen
发明人： Huan-Tai Lin , Shinn-Sheng Yu , Anthony Yen
IPC分类号： H01L2166
CPC分类号： G03F1/36 , G03F7/40 , H01L21/0274 , Y10S438/947 , Y10S438/975
摘要： Photoresist reflow for an enhanced process window for non-dense contacts is disclosed. A corrective bias is determined for application to each of a number of contacts at different pitches, to achieve a substantially identical critical dimension for each contact. The corrective bias is determined based on a first and a second critical dimension for each contact, where the first critical dimension is before photoresist reflow, and potentially inclusive of optical proximity effects, and the second critical dimension is after photoresist reflow. A photomask is then constructed for a semiconductor design that incorporates the corrective bias that has been determined for the contacts of the design. Lithographical processing of the semiconductor design on a semiconductor wafer using thus photomask, and subsequent photoresist reflow, thus achieves a substantially identical critical dimension for each of the contacts of the semiconductor design.
摘要翻译：公开了用于非致密接触的增强工艺窗口的光刻胶回流。确定以不同间距施加到多个触点中的每一个的校正偏压，以实现每个触点的基本上相同的临界尺寸。基于每个接触件的第一和第二临界尺寸确定校正偏压，其中第一临界尺寸在光致抗蚀剂回流之前，并且潜在地包括光学邻近效应，并且第二临界尺寸在光致抗蚀剂回流之后。然后构造一个光掩模用于半导体设计，其包含已经为设计的触点确定的校正偏差。使用这样的光掩模和随后的光致抗蚀剂回流在半导体晶片上的半导体设计的光刻处理从而为半导体设计的每个触点实现了基本相同的临界尺寸。

6. 发明授权

US06774044B2 Reducing photoresist shrinkage via plasma treatment 失效
标题翻译：通过等离子体处理减少光致抗蚀剂的收缩
公开(公告)号：US06774044B2
公开(公告)日：2004-08-10
申请号：US10047266
申请日：2002-01-14
申请人： Chih-Ming Ke , Tsai-Sheng Giau , Jaw-Jung Shin , Anthony Yen
发明人： Chih-Ming Ke , Tsai-Sheng Giau , Jaw-Jung Shin , Anthony Yen
IPC分类号： H01L21302
CPC分类号： H01L21/31058 , G03F7/40 , H01L21/0274
摘要： Reducing photoresist shrinkage by plasma treatment is disclosed. A semiconductor wafer having one or more photoresist layers is plasma treated, such as plasma curing, plasma etching, and/or high-density plasma etching the wafer. After plasma treating, one or more critical dimensions on the photoresist layers is measured using an electron beam, such as by using a scanning electron microscope (SEM). The plasma treating of the wafer prior to measuring the critical dimensions using the electron beam decreases shrinkage of the photoresist layer when using the electron beam.
摘要翻译：公开了通过等离子体处理降低光刻胶的收缩率。具有一个或多个光致抗蚀剂层的半导体晶片被等离子体处理，例如等离子体固化，等离子体蚀刻和/或高密度等离子体蚀刻晶片。在等离子体处理之后，使用电子束，例如通过使用扫描电子显微镜（SEM）测量光致抗蚀剂层上的一个或多个临界尺寸。在使用电子束测量临界尺寸之前对晶片的等离子体处理降低了当使用电子束时光致抗蚀剂层的收缩。

7. 发明授权

US06720116B1 Process flow and pellicle type for 157 nm mask making 失效
标题翻译： 157 nm掩模制作的工艺流程和防护薄膜
公开(公告)号：US06720116B1
公开(公告)日：2004-04-13
申请号：US10339186
申请日：2003-01-09
申请人： San-De Tzu , Anthony Yen , Chung Hsing Chang , Chen-Hao Hsieh
发明人： San-De Tzu , Anthony Yen , Chung Hsing Chang , Chen-Hao Hsieh
IPC分类号： G03F900
CPC分类号： G03F1/62 , G03F1/48 , G03F1/54 , G03F1/60
摘要： A method for forming a photomask and pellicle suitable for use in photolithography with incident electromagnetic radiation in a wavelength range from above 250 nm to below 150 nm. The opaque regions of the photomask are formed directly within a transparent F-doped quartz layer by either gallium ion staining using a focused ion beam (FIB) or by deposition of carbon atoms within trenches formed in the transparent layer, said carbon atom deposition being a result of the interaction of a FIB with styrene molecules. An alignment boundary formed on the resulting mask allows a hard pellicle to be fit directly over it so as to avoid warping.
摘要翻译：一种用于形成适用于光刻中的光掩模和防护薄膜的方法，其中入射电磁辐射的波长范围为250nm至150nm以下。光掩模的不透明区域通过使用聚焦离子束（FIB）的镓离子染色或通过在形成在透明层中的沟槽内沉积碳原子而直接在透明的F掺杂的石英层内形成，所述碳原子沉积为 FIB与苯乙烯分子相互作用的结果。形成在所得到的掩模上的对准边界允许硬防护薄膜直接配合在其上，以避免翘曲。

8. 发明授权

US06151103A Method and system for improved optical imaging in microlithography 有权
标题翻译：在微光刻中改进光学成像的方法和系统
公开(公告)号：US06151103A
公开(公告)日：2000-11-21
申请号：US281530
申请日：1999-03-30
申请人： Jing-Shing Shu , Anthony Yen
发明人： Jing-Shing Shu , Anthony Yen
IPC分类号： G02B5/20 , G02B27/46 , G03F1/00 , G03F7/20 , H01L21/027 , G03B27/42 , G02B27/42 , G03B27/72
CPC分类号： G03F7/70058 , G02B27/46 , G03F1/72 , G03F1/84 , G03F7/7025 , G03F7/70308 , G03F7/70591 , G03F7/70641
摘要： An improved microlithographic imaging system (100) is disclosed. The system comprises a filter (183) substantially aligned with a first image plane, adjacent to an aperture (185). The filter is formed in response to an image projected by a light source (110) through a reticle (160) onto the first image plane. The improved microlithographic imaging system has higher resolution and depth of focus than prior art imaging systems, due to the additional filtering performed by the filter (183). A filter in accordance with the invention can be fabricated easily and inexpensively, using conventional microlithography techniques. A filter in accordance with the invention can also be used to detect or correct flaws in the reticle (160).
摘要翻译：公开了一种改进的微光刻成像系统（100）。该系统包括与第一图像平面基本对齐的滤光器（183），邻近孔（185）。响应于由光源（110）通过掩模版（160）投影到第一图像平面上的图像而形成滤光器。由于过滤器（183）执行的附加过滤，改进的微光刻成像系统具有比现有技术的成像系统更高的分辨率和更高的聚焦深度。根据本发明的过滤器可以使用常规的微光刻技术容易且廉价地制造。根据本发明的过滤器还可以用于检测或纠正标线（160）中的缺陷。

9. 发明授权

US08877409B2 Reflective mask and method of making same 有权
标题翻译：反光罩及其制作方法
公开(公告)号：US08877409B2
公开(公告)日：2014-11-04
申请号：US13451705
申请日：2012-04-20
申请人： Pei-Cheng Hsu , Chih-Tsung Shih , Chia-Jen Chen , Tsiao-Chen Wu , Shinn-Sheng Yu , Hsin-Chang Lee , Anthony Yen
发明人： Pei-Cheng Hsu , Chih-Tsung Shih , Chia-Jen Chen , Tsiao-Chen Wu , Shinn-Sheng Yu , Hsin-Chang Lee , Anthony Yen
IPC分类号： G03F1/24
CPC分类号： G03F1/24 , G03F1/48 , H01L21/0337
摘要： A reflective mask is described. The mask includes a low thermal expansion material (LTEM) substrate, a conductive layer deposited on a first surface of the LTEM substrate, a stack of reflective multilayers (ML) deposited on a second surface of the LTEM substrate, a capping layer deposited on the stack of reflective ML, a first absorption layer deposited on the first capping layer, a main pattern, and a border ditch. The border ditch reaches to the capping layer, a second absorption layer deposited inside the border ditch, and the second absorption layer contacts the capping layer. In some instances, the border ditch crosses the capping layer and partially enters the reflective multilayer.
摘要翻译：描述了一种反光罩。掩模包括低热膨胀材料（LTEM）衬底，沉积在LTEM衬底的第一表面上的导电层，沉积在LTEM衬底的第二表面上的反射多层堆叠（ML），沉积在堆叠的反射ML，沉积在第一盖层上的第一吸收层，主图案和边界沟。边界沟到达覆盖层，沉积在边界沟内的第二吸收层，第二吸收层接触覆盖层。在一些情况下，边界沟穿过覆盖层并部分地进入反射层。

10. 发明授权

US08765330B2 Phase shift mask for extreme ultraviolet lithography and method of fabricating same 有权
标题翻译：用于极紫外光刻的相移掩模及其制造方法
公开(公告)号：US08765330B2
公开(公告)日：2014-07-01
申请号：US13564198
申请日：2012-08-01
申请人： Chia-Tsung Shih , Pei-Chung Hsu , Shinn-Sheng Yu , Tsiao-Chen Wu , Yen-Cheng Lu , Shu-Hao Chang , Chia-Jen Chen , Hsin-Chang Lee , Anthony Yen
发明人： Chia-Tsung Shih , Pei-Chung Hsu , Shinn-Sheng Yu , Tsiao-Chen Wu , Yen-Cheng Lu , Shu-Hao Chang , Chia-Jen Chen , Hsin-Chang Lee , Anthony Yen
IPC分类号： G03F1/24 , G03F1/54
CPC分类号： G03F1/26 , G03F1/24
摘要： A mask and method of fabricating same are disclosed. In an example, a mask includes a substrate, a reflective multilayer coating disposed over the substrate, an Ag2O absorber layer disposed over the reflective multilayer coating, and a tantalum-containing absorber layer disposed over the Ag2O absorber layer. The tantalum-containing absorber layer is disposed over the Ag2O absorber layer outside a mask image region of the mask, such that the mask image region of the mask is free of the tantalum-containing absorber layer. In an example, the tantalum-containing absorber layer is disposed over the Ag2O absorber layer adjacent to the mask image region.
摘要翻译：公开了一种掩模及其制造方法。在一个示例中，掩模包括基板，设置在基板上的反射多层涂层，设置在反射多层涂层上的Ag 2 O吸收层，以及设置在Ag 2 O吸收层上的含钽吸收层。含钽吸收层设置在掩模的掩模图像区域外侧的Ag 2 O吸收体层上，使得掩模的掩模图像区域不含含钽吸收层。在一个实例中，含钽吸收层设置在与掩模图像区域相邻的Ag 2 O吸收层上。

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