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1. 发明申请

US20120167973A1 SOLAR CELL 有权
标题翻译：太阳能电池
公开(公告)号：US20120167973A1
公开(公告)日：2012-07-05
申请号：US13089321
申请日：2011-04-19
申请人： Yen-Cheng Hu , Peng Chen , Shuo-Wei Liang , Zhen-Cheng Wu
发明人： Yen-Cheng Hu , Peng Chen , Shuo-Wei Liang , Zhen-Cheng Wu
IPC分类号： H01L31/0216 , H01L31/0232 , B82Y99/00
CPC分类号： H01L31/02168 , H01L31/022441 , H01L31/035209 , H01L31/035227 , H01L31/0682 , Y02E10/547
摘要： A solar cell includes a semiconductor substrate, a doping layer, a quantum well layer, a first passivation layer, a second passivation layer, a first electrode and a second electrode. The semiconductor substrate has a front surface and a back surface, and the front surface of the semiconductor substrate includes nano-rods. The doping layer covers the surface of the nano-rods. The electrode layers cover the doping layer. The quantum well layer having at least one first doping region and at least one second doping region is disposed on the semiconductor substrate. The quantum well layer includes polycrystalline silicon germanium (Si1-xGex). The first passivation layer and the second passivation layer cover the first and the second doping regions of the quantum well layer, respectively. The first electrode and the second electrode are electrically connected to the first doping region and the second doping region of the quantum well layer, respectively.
摘要翻译：太阳能电池包括半导体衬底，掺杂层，量子阱层，第一钝化层，第二钝化层，第一电极和第二电极。半导体衬底具有前表面和后表面，并且半导体衬底的前表面包括纳米棒。掺杂层覆盖纳米棒的表面。电极层覆盖掺杂层。具有至少一个第一掺杂区域和至少一个第二掺杂区域的量子阱层设置在半导体衬底上。量子阱层包括多晶硅锗（Si1-xGex）。第一钝化层和第二钝化层分别覆盖量子阱层的第一和第二掺杂区域。第一电极和第二电极分别电连接到量子阱层的第一掺杂区域和第二掺杂区域。

2. 发明授权

US08779281B2 Solar cell 有权
标题翻译：太阳能电池
公开(公告)号：US08779281B2
公开(公告)日：2014-07-15
申请号：US13100310
申请日：2011-05-04
申请人： Yen-Cheng Hu , Peng Chen , Tsung-Pao Chen , Shuo-Wei Liang , Zhen-Cheng Wu , Chien-Jen Chen
发明人： Yen-Cheng Hu , Peng Chen , Tsung-Pao Chen , Shuo-Wei Liang , Zhen-Cheng Wu , Chien-Jen Chen
IPC分类号： H01L31/00 , H01L31/0216 , H01L31/18
CPC分类号： H01L31/0264 , H01L31/02167 , H01L31/02168 , H01L31/18 , Y02E10/50
摘要： A solar cell includes a semi-conductive substrate, a doping layer, an anti-reflection layer, an electrode, a passivation stacked layer and a contact layer. The semi-conductive substrate has a front and a back surface. The doping layer is disposed on the front surface. The anti-reflection layer is disposed on the doping layer. The electrode is disposed on the anti-reflection layer and electrically connected to the doping layer. The passivation stacked layer is disposed on the back surface and has a first dielectric layer, a second dielectric layer and a middle dielectric layer sandwiched between the first and the second dielectric layer. The dielectric constant of the middle dielectric layer is substantially lower than the dielectric constant of the first dielectric layer and the dielectric constant of the second dielectric layer. The contact layer covers the passivation stacked layer and electrically contacts with the back surface of the semi-conductive substrate.
摘要翻译：太阳能电池包括半导体基板，掺杂层，抗反射层，电极，钝化堆叠层和接触层。半导体基板具有前表面和后表面。掺杂层设置在前表面上。抗反射层设置在掺杂层上。电极设置在抗反射层上并与掺杂层电连接。钝化堆叠层设置在背面上，并且具有夹在第一和第二电介质层之间的第一电介质层，第二电介质层和中间电介质层。中间介电层的介电常数基本上低于第一介电层的介电常数和第二介质层的介电常数。接触层覆盖钝化堆叠层并与半导体基板的背面电接触。

3. 发明授权

US08952244B2 Solar cell 有权
标题翻译：太阳能电池
公开(公告)号：US08952244B2
公开(公告)日：2015-02-10
申请号：US13089321
申请日：2011-04-19
申请人： Yen-Cheng Hu , Peng Chen , Shuo-Wei Liang , Zhen-Cheng Wu
发明人： Yen-Cheng Hu , Peng Chen , Shuo-Wei Liang , Zhen-Cheng Wu
IPC分类号： H01L31/00 , H01L31/0216 , H01L31/0224 , H01L31/0352 , H01L31/068
CPC分类号： H01L31/02168 , H01L31/022441 , H01L31/035209 , H01L31/035227 , H01L31/0682 , Y02E10/547
摘要： A solar cell includes a semiconductor substrate, a doping layer, a quantum well layer, a first passivation layer, a second passivation layer, a first electrode and a second electrode. The semiconductor substrate has a front surface and a back surface, and the front surface of the semiconductor substrate includes nano-rods. The doping layer covers the surface of the nano-rods. The electrode layers cover the doping layer. The quantum well layer having at least one first doping region and at least one second doping region is disposed on the semiconductor substrate. The quantum well layer includes polycrystalline silicon germanium (Si1-xGex). The first passivation layer and the second passivation layer cover the first and the second doping regions of the quantum well layer, respectively. The first electrode and the second electrode are electrically connected to the first doping region and the second doping region of the quantum well layer, respectively.
摘要翻译：太阳能电池包括半导体衬底，掺杂层，量子阱层，第一钝化层，第二钝化层，第一电极和第二电极。半导体衬底具有前表面和后表面，并且半导体衬底的前表面包括纳米棒。掺杂层覆盖纳米棒的表面。电极层覆盖掺杂层。具有至少一个第一掺杂区域和至少一个第二掺杂区域的量子阱层设置在半导体衬底上。量子阱层包括多晶硅锗（Si1-xGex）。第一钝化层和第二钝化层分别覆盖量子阱层的第一和第二掺杂区域。第一电极和第二电极分别电连接到量子阱层的第一掺杂区域和第二掺杂区域。

4. 发明申请

US20120097236A1 SOLAR CELL 有权
标题翻译：太阳能电池
公开(公告)号：US20120097236A1
公开(公告)日：2012-04-26
申请号：US13100310
申请日：2011-05-04
申请人： Yen-Cheng Hu , Peng Chen , Tsung-Pao Chen , Shuo-Wei Liang , Zhen-Cheng Wu , Chien-Jen Chen
发明人： Yen-Cheng Hu , Peng Chen , Tsung-Pao Chen , Shuo-Wei Liang , Zhen-Cheng Wu , Chien-Jen Chen
IPC分类号： H01L31/0216
CPC分类号： H01L31/0264 , H01L31/02167 , H01L31/02168 , H01L31/18 , Y02E10/50
摘要： A solar cell includes a semi-conductive substrate, a doping layer, an anti-reflection layer, an electrode, a passivation stacked layer and a contact layer. The semi-conductive substrate has a front and a back surface. The doping layer is disposed on the front surface. The anti-reflection layer is disposed on the doping layer. The electrode is disposed on the anti-reflection layer and electrically connected to the doping layer. The passivation stacked layer is disposed on the back surface and has a first dielectric layer, a second dielectric layer and a middle dielectric layer sandwiched between the first and the second dielectric layer. The dielectric constant of the middle dielectric layer is substantially lower than the dielectric constant of the first dielectric layer and the dielectric constant of the second dielectric layer. The contact layer covers the passivation stacked layer and electrically contacts with the back surface of the semi-conductive substrate.
摘要翻译：太阳能电池包括半导体基板，掺杂层，抗反射层，电极，钝化堆叠层和接触层。半导体基板具有前表面和后表面。掺杂层设置在前表面上。抗反射层设置在掺杂层上。电极设置在抗反射层上并与掺杂层电连接。钝化堆叠层设置在背面上，并且具有夹在第一和第二电介质层之间的第一电介质层，第二电介质层和中间电介质层。中间介电层的介电常数基本上低于第一介电层的介电常数和第二介质层的介电常数。接触层覆盖钝化堆叠层并与半导体基板的背面电接触。

5. 发明申请

US20120097246A1 SOLAR CELL AND METHOD OF MAKING THE SAME 审中-公开
标题翻译：太阳能电池及其制造方法
公开(公告)号：US20120097246A1
公开(公告)日：2012-04-26
申请号：US13074015
申请日：2011-03-29
申请人： Chee-Wee Liu , Wei-Shuo Ho , Yen-Yu Chen , Chun-Yuan Ku , Zhen-Cheng Wu , Shuo-Wei Liang , Jen-Chieh Chen , Chung-Wei Lai , Tsung-Pao Chen
发明人： Chee-Wee Liu , Wei-Shuo Ho , Yen-Yu Chen , Chun-Yuan Ku , Zhen-Cheng Wu , Shuo-Wei Liang , Jen-Chieh Chen , Chung-Wei Lai , Tsung-Pao Chen
IPC分类号： H01L31/036 , H01L31/20
CPC分类号： H01L31/1804 , H01L31/068 , Y02E10/547 , Y02P70/521
摘要： A solar cell includes a crystalline semiconductor substrate; a first crystalline semiconductor layer; an amorphous semiconductor layer; a first metal electrode layer and a second metal electrode layer. The crystalline semiconductor substrate has a first surface and a second surface, and the crystalline semiconductor substrate has a first doped type. The first crystalline semiconductor layer is disposed on the first surface of the crystalline semiconductor substrate, where the first crystalline semiconductor layer has a second doped type contrary to the first doped type. The amorphous semiconductor layer is disposed on the first crystalline semiconductor layer, and the amorphous semiconductor layer has the second doped type. The first metal electrode layer is disposed on the amorphous semiconductor layer. The second metal electrode layer is disposed on the second surface of the crystalline semiconductor substrate.
摘要翻译：太阳能电池包括晶体半导体衬底; 第一晶体半导体层; 非晶半导体层; 第一金属电极层和第二金属电极层。晶体半导体衬底具有第一表面和第二表面，并且晶体半导体衬底具有第一掺杂型。第一晶体半导体层设置在晶体半导体衬底的第一表面上，其中第一晶体半导体层具有与第一掺杂类型相反的第二掺杂型。非晶半导体层设置在第一结晶半导体层上，非晶半导体层具有第二掺杂型。第一金属电极层设置在非晶半导体层上。第二金属电极层设置在晶体半导体衬底的第二表面上。

6. 发明申请

US20060202203A1 Structure of TFT electrode for preventing metal layer diffusion and manufacturing method therefor 有权
公开(公告)号：US20060202203A1
公开(公告)日：2006-09-14
申请号：US11375336
申请日：2006-03-15
申请人： Cheng-Chung Chen , Yu-Chang Sun , Yi-Hsun Huang , Chien-Wei Wu , Shuo-Wei Liang , Chia-Hsiang Chen , Chi-Shen Lee , Chai-Yuan Sheu , Yu-Chi Lee , Te-Ming Chu , Cheng-Hsing Chen
发明人： Cheng-Chung Chen , Yu-Chang Sun , Yi-Hsun Huang , Chien-Wei Wu , Shuo-Wei Liang , Chia-Hsiang Chen , Chi-Shen Lee , Chai-Yuan Sheu , Yu-Chi Lee , Te-Ming Chu , Cheng-Hsing Chen
IPC分类号： H01L29/04
CPC分类号： H01L29/78669 , H01L27/124 , H01L29/42384 , H01L29/4908 , H01L29/66765
摘要： The invention provides a TFT electrode structure and its manufacturing method that can prevent metal diffusion occurring in the fabrication of a TFT, and thereby reduce the risk of contamination of the chemical vapor deposition process due to metallic ion diffusion. The transparent pixel electrode is formed after the gate electrode metal so that the pixel transparent electrode can be used as a barrier layer to prevent metal diffusion under high temperature from the gate electrode metal to adjacent insulating layers or the active layer. Further, the method used to form the transparent pixel electrode is a low-temperature physical vapor deposition process, which affected less by the processing environment, and the transparent pixel electrode is a conductive layer that is not affected by metal diffusion.

7. 发明申请

US20050274947A1 Structure of TFT electrode for preventing metal layer diffusion and manufacturing method therefor 有权
标题翻译：用于防止金属层扩散的TFT电极的结构及其制造方法
公开(公告)号：US20050274947A1
公开(公告)日：2005-12-15
申请号：US10964611
申请日：2004-10-15
申请人： Cheng-Chung Chen , Yu-Chang Sun , Yi-Hsun Huang , Chien-Wei Wu , Shuo-Wei Liang , Chia-Hsiang Chen , Chi-Shen Lee , Chai-Yuan Sheu , Yu-Chi Lee , Te-Ming Chu , Cheng-Hsing Chen
发明人： Cheng-Chung Chen , Yu-Chang Sun , Yi-Hsun Huang , Chien-Wei Wu , Shuo-Wei Liang , Chia-Hsiang Chen , Chi-Shen Lee , Chai-Yuan Sheu , Yu-Chi Lee , Te-Ming Chu , Cheng-Hsing Chen
IPC分类号： H01L21/00 , H01L21/336 , H01L21/77 , H01L21/84 , H01L29/423 , H01L29/49 , H01L29/786
CPC分类号： H01L29/78669 , H01L27/124 , H01L29/42384 , H01L29/4908 , H01L29/66765
摘要： The invention provides a TFT electrode structure and its manufacturing method that can prevent metal diffusion occurring in the fabrication of a TFT, and thereby reduce the risk of contamination of the chemical vapor deposition process due to metallic ion diffusion. The transparent pixel electrode is formed after the gate electrode metal so that the pixel transparent electrode can be used as a barrier layer to prevent metal diffusion under high temperature from the gate electrode metal to adjacent insulating layers or the active layer. Further, the method used to form the transparent pixel electrode is a low-temperature physical vapor deposition process, which affected less by the processing environment, and the transparent pixel electrode is a conductive layer that is not affected by metal diffusion.
摘要翻译：本发明提供一种能够防止TFT制造中发生金属扩散的TFT电极结构及其制造方法，从而降低由金属离子扩散引起的化学气相沉积工艺的污染风险。透明像素电极形成在栅电极金属之后，使得像素透明电极可以用作阻挡层，以防止在高温下从栅电极金属到相邻绝缘层或有源层的金属扩散。此外，用于形成透明像素电极的方法是低温物理气相沉积工艺，其受处理环境影响较小，并且透明像素电极是不受金属扩散影响的导电层。

8. 发明授权

US08222095B2 Method for fabricating thin film transistor 有权
标题翻译：制造薄膜晶体管的方法
公开(公告)号：US08222095B2
公开(公告)日：2012-07-17
申请号：US12258451
申请日：2008-10-27
申请人： Fang-Chen Luo , Shuo-Wei Liang , Shin-Chuan Chiang , Chao-Nan Chen , Chin-Chih Yu
发明人： Fang-Chen Luo , Shuo-Wei Liang , Shin-Chuan Chiang , Chao-Nan Chen , Chin-Chih Yu
IPC分类号： H01L21/00
CPC分类号： H01L29/7869
摘要： A method for fabricating a thin film transistor is provided. A gate is formed on a substrate. A gate insulating layer is formed on the substrate to cover the gate. A metal oxide material layer is formed on the gate insulating layer. A photoresist layer is formed on the metal oxide material layer, in which a thickness of the photoresist layer above the gate is larger than that of the photoresist layer above two sides adjacent to the gate. A portion of the metal oxide material layer is removed to form a metal oxide active layer by using the photoresist layer as a mask. The photoresist layer above the two sides adjacent to the gate is removed and the remaining photoresist layer covers a portion of the metal oxide active layer. A source and a drain are formed on the metal oxide active layer covered by the photoresist layer.
摘要翻译：提供一种制造薄膜晶体管的方法。栅极形成在基板上。在基板上形成栅极绝缘层以覆盖栅极。在栅极绝缘层上形成金属氧化物材料层。在金属氧化物材料层上形成光致抗蚀剂层，其中栅极上方的光致抗蚀剂层的厚度大于与栅极相邻的两侧上方的光致抗蚀剂层的厚度。通过使用光致抗蚀剂层作为掩模，去除金属氧化物材料层的一部分以形成金属氧化物活性层。去除与栅极相邻的两侧上方的光致抗蚀剂层，剩余的光致抗蚀剂层覆盖金属氧化物活性层的一部分。在由光致抗蚀剂层覆盖的金属氧化物有源层上形成源极和漏极。

9. 发明申请

US20080067148A1 ETCHANT FOR PATTERNING COMPOSITE LAYER AND METHOD OF FABRICATING PATTERNED CONDUCTIVE LAYER OF ELECTRONIC DEVICE USING THE SAME 有权
标题翻译：用于绘制复合层的蚀刻剂和使用其制造电子器件的图案导电层的方法
公开(公告)号：US20080067148A1
公开(公告)日：2008-03-20
申请号：US11670424
申请日：2007-02-02
申请人： Sai-Chang Liu , Cheng-Tzu Yang , Chien-Wei Wu , Shuo-Wei Liang
发明人： Sai-Chang Liu , Cheng-Tzu Yang , Chien-Wei Wu , Shuo-Wei Liang
IPC分类号： B44C1/22 , C23F1/00
CPC分类号： C23F1/18 , C23F1/26 , H01L21/32134 , H01L27/124 , H01L29/458 , H01L29/4908
摘要： An etchant for patterning composite layer containing copper is provided. The etchant includes peracetic acid being about 5% to 40% by weight and serving as a major component, a peracetic acid stabilizer being about 5% to 15% by weight, an organic acid being about 5% to 10% by weight, an inorganic acid being about 5% to 15% by weight, a salt being about 8% to 15% by weight, which are based on the total weight of the etchant.
摘要翻译：提供了含有铜的图案化复合层的蚀刻剂。蚀刻剂包括约5重量％至40重量％的过乙酸和用作主要组分，过乙酸稳定剂为约5重量％至15重量％，有机酸为约5重量％至10重量％，无机酸为约5重量％至15重量％，盐为约8重量％至15重量％，基于蚀刻剂的总重量计。

10. 发明申请

US20110284074A1 PHOTOVOLTAIC CELL 审中-公开
标题翻译：光伏电池
公开(公告)号：US20110284074A1
公开(公告)日：2011-11-24
申请号：US12891721
申请日：2010-09-27
申请人： Chee-Wee Liu , Wei-Shuo Ho , Yen-Yu Chen , Chun-Yuan Ku , Chien-Jen Chen , Han-Tu Lin , Shuo-Wei Liang
发明人： Chee-Wee Liu , Wei-Shuo Ho , Yen-Yu Chen , Chun-Yuan Ku , Chien-Jen Chen , Han-Tu Lin , Shuo-Wei Liang
IPC分类号： H01L31/0376
CPC分类号： H01L31/0747 , Y02E10/50
摘要： A photovoltaic cell includes a first type doped mono-crystalline silicon substrate, an intrinsic amorphous silicon layer, a second type doped amorphous silicon layer, a first type doped crystalline Ge-containing layer, and a pair of electrodes. The first type doped mono-crystalline silicon substrate has a front surface and a rear surface. The intrinsic amorphous silicon layer is disposed on the front surface. The second type doped amorphous silicon layer is disposed on the intrinsic amorphous silicon layer. The first type doped crystalline Ge-containing layer is disposed on the rear surface. The pair of electrodes are electrically connected to the second type doped amorphous silicon layer and first type doped crystalline Ge-containing layer, respectively.
摘要翻译：光伏电池包括第一掺杂单晶硅衬底，本征非晶硅层，第二掺杂非晶硅层，第一掺杂晶体Ge含量层和一对电极。第一种掺杂单晶硅衬底具有前表面和后表面。本征非晶硅层设置在前表面上。第二类掺杂非晶硅层设置在本征非晶硅层上。第一类型的掺杂结晶Ge含量层设置在后表面上。该对电极分别电连接到第二类掺杂非晶硅层和第一掺杂结晶Ge含量层。

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