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1. 发明申请

US20110284074A1 PHOTOVOLTAIC CELL 审中-公开
标题翻译：光伏电池
公开(公告)号：US20110284074A1
公开(公告)日：2011-11-24
申请号：US12891721
申请日：2010-09-27
申请人： Chee-Wee Liu , Wei-Shuo Ho , Yen-Yu Chen , Chun-Yuan Ku , Chien-Jen Chen , Han-Tu Lin , Shuo-Wei Liang
发明人： Chee-Wee Liu , Wei-Shuo Ho , Yen-Yu Chen , Chun-Yuan Ku , Chien-Jen Chen , Han-Tu Lin , Shuo-Wei Liang
IPC分类号： H01L31/0376
CPC分类号： H01L31/0747 , Y02E10/50
摘要： A photovoltaic cell includes a first type doped mono-crystalline silicon substrate, an intrinsic amorphous silicon layer, a second type doped amorphous silicon layer, a first type doped crystalline Ge-containing layer, and a pair of electrodes. The first type doped mono-crystalline silicon substrate has a front surface and a rear surface. The intrinsic amorphous silicon layer is disposed on the front surface. The second type doped amorphous silicon layer is disposed on the intrinsic amorphous silicon layer. The first type doped crystalline Ge-containing layer is disposed on the rear surface. The pair of electrodes are electrically connected to the second type doped amorphous silicon layer and first type doped crystalline Ge-containing layer, respectively.
摘要翻译：光伏电池包括第一掺杂单晶硅衬底，本征非晶硅层，第二掺杂非晶硅层，第一掺杂晶体Ge含量层和一对电极。第一种掺杂单晶硅衬底具有前表面和后表面。本征非晶硅层设置在前表面上。第二类掺杂非晶硅层设置在本征非晶硅层上。第一类型的掺杂结晶Ge含量层设置在后表面上。该对电极分别电连接到第二类掺杂非晶硅层和第一掺杂结晶Ge含量层。

2. 发明申请

US20120097246A1 SOLAR CELL AND METHOD OF MAKING THE SAME 审中-公开
标题翻译：太阳能电池及其制造方法
公开(公告)号：US20120097246A1
公开(公告)日：2012-04-26
申请号：US13074015
申请日：2011-03-29
申请人： Chee-Wee Liu , Wei-Shuo Ho , Yen-Yu Chen , Chun-Yuan Ku , Zhen-Cheng Wu , Shuo-Wei Liang , Jen-Chieh Chen , Chung-Wei Lai , Tsung-Pao Chen
发明人： Chee-Wee Liu , Wei-Shuo Ho , Yen-Yu Chen , Chun-Yuan Ku , Zhen-Cheng Wu , Shuo-Wei Liang , Jen-Chieh Chen , Chung-Wei Lai , Tsung-Pao Chen
IPC分类号： H01L31/036 , H01L31/20
CPC分类号： H01L31/1804 , H01L31/068 , Y02E10/547 , Y02P70/521
摘要： A solar cell includes a crystalline semiconductor substrate; a first crystalline semiconductor layer; an amorphous semiconductor layer; a first metal electrode layer and a second metal electrode layer. The crystalline semiconductor substrate has a first surface and a second surface, and the crystalline semiconductor substrate has a first doped type. The first crystalline semiconductor layer is disposed on the first surface of the crystalline semiconductor substrate, where the first crystalline semiconductor layer has a second doped type contrary to the first doped type. The amorphous semiconductor layer is disposed on the first crystalline semiconductor layer, and the amorphous semiconductor layer has the second doped type. The first metal electrode layer is disposed on the amorphous semiconductor layer. The second metal electrode layer is disposed on the second surface of the crystalline semiconductor substrate.
摘要翻译：太阳能电池包括晶体半导体衬底; 第一晶体半导体层; 非晶半导体层; 第一金属电极层和第二金属电极层。晶体半导体衬底具有第一表面和第二表面，并且晶体半导体衬底具有第一掺杂型。第一晶体半导体层设置在晶体半导体衬底的第一表面上，其中第一晶体半导体层具有与第一掺杂类型相反的第二掺杂型。非晶半导体层设置在第一结晶半导体层上，非晶半导体层具有第二掺杂型。第一金属电极层设置在非晶半导体层上。第二金属电极层设置在晶体半导体衬底的第二表面上。

3. 发明申请

US20130087191A1 POINT-CONTACT SOLAR CELL STRUCTURE 审中-公开
标题翻译：点接触太阳能电池结构
公开(公告)号：US20130087191A1
公开(公告)日：2013-04-11
申请号：US13341526
申请日：2011-12-30
申请人： Seow-Wei TAN , Yen-Yu Chen , Wei-Shuo Ho , Yu-Hung Huang , Chee-Wee Liu
发明人： Seow-Wei TAN , Yen-Yu Chen , Wei-Shuo Ho , Yu-Hung Huang , Chee-Wee Liu
IPC分类号： H01L31/0224 , H01L31/0216
CPC分类号： H01L31/022425 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A point-contact solar cell structure includes a semiconductor substrate, a front electrode, a first passivation layer, a second passivation layer, and a rear electrode. The semiconductor substrate includes an upper surface, a lower surface, and an emitter layer, a base layer, and a plurality of locally doped regions located between the upper surface and the lower surface. The plurality of locally doped regions is located on the lower surface at intervals. The second passivation layer is located on the lower surface, and has a plurality of openings disposed respectively corresponding to the locally doped regions. The rear electrode is located on one side of the second passivation layer opposite to the semiconductor substrate, and passes through the second passivation layer via the openings to contact the locally doped regions. The width of at least one opening corresponding to the front electrode is greater than that of the remaining openings.
摘要翻译：点接触太阳能电池结构包括半导体衬底，前电极，第一钝化层，第二钝化层和后电极。半导体衬底包括位于上表面和下表面之间的上表面，下表面和发射极层，基底层和多个局部掺杂区域。多个局部掺杂区域间隔地位于下表面上。第二钝化层位于下表面，并且具有分别对应于局部掺杂区域设置的多个开口。后电极位于与半导体衬底相对的第二钝化层的一侧上，并且经由开口穿过第二钝化层以接触局部掺杂区域。对应于前电极的至少一个开口的宽度大于其余开口的宽度。

4. 发明申请

US20130089943A1 METHOD OF MANUFACTURING A SOLAR CELL 审中-公开
标题翻译：制造太阳能电池的方法
公开(公告)号：US20130089943A1
公开(公告)日：2013-04-11
申请号：US13440951
申请日：2012-04-05
申请人： Yen-Yu Chen , Wei-Shuo Ho , Yu-Hung Huang , Y.Y. Chen , Chee Wee Liu
发明人： Yen-Yu Chen , Wei-Shuo Ho , Yu-Hung Huang , Y.Y. Chen , Chee Wee Liu
IPC分类号： H01L31/0232
CPC分类号： H01L31/02167 , H01L31/02168 , H01L31/068 , H01L31/1864 , H01L31/1868 , Y02E10/547 , Y02P70/521
摘要： An embodiment of the present disclosure provides method of manufacturing a solar cell. The method comprises the steps of providing a silicon substrate, forming a P-N junction structure in the silicon substrate, forming an oxide layer for passivating the surface defect of the substrate that has a low reflectivity for AM1.5G solar spectrum, and forming a plurality of metal electrodes on the silicon substrate.
摘要翻译：本公开的实施例提供了制造太阳能电池的方法。该方法包括以下步骤：提供硅衬底，在硅衬底中形成PN结结构，形成用于钝化对AM1.5G太阳光谱具有低反射率的衬底的表面缺陷的氧化物层，以及形成多个硅基板上的金属电极。

5. 发明申请

US20110053351A1 Solar Cell Defect Passivation Method 有权
标题翻译：太阳能电池缺陷钝化法
公开(公告)号：US20110053351A1
公开(公告)日：2011-03-03
申请号：US12853232
申请日：2010-08-09
申请人： Wen-Fa Tsai , Jyong-Fong Liao , Yen-Yu Chen , Chee Wee Liu , Chi-Fong Ai
发明人： Wen-Fa Tsai , Jyong-Fong Liao , Yen-Yu Chen , Chee Wee Liu , Chi-Fong Ai
IPC分类号： H01L21/30
CPC分类号： H01L31/1868 , Y02E10/50 , Y02P70/521
摘要： The present disclosure passivates solar cell defects. Plasma immersion ion implantation (PIII) is used to repair the defects during or after making the solar cell. Hydrogen ion is implanted into absorption layer with different sums of energy to fill gaps of defects or surface recombination centers. Thus, solar cell defects are diminished and carriers are transferred with improved photovoltaic conversion efficiency.
摘要翻译：本公开钝化太阳能电池缺陷。在制造太阳能电池期间或之后，使用等离子体浸没离子注入（PIII）来修复缺陷。将氢离子注入到具有不同的能量之和的吸收层中以填充缺陷或表面复合中心的间隙。因此，太阳能电池缺陷减少，并且载流子随着光伏转换效率的提高而被转移。

6. 发明授权

US08062964B2 Solar cell defect passivation method 有权
标题翻译：太阳能电池缺陷钝化法
公开(公告)号：US08062964B2
公开(公告)日：2011-11-22
申请号：US12853232
申请日：2010-08-09
申请人： Wen-Fa Tsai , Jyong-Fong Liao , Yen-Yu Chen , Chee Wee Liu , Chi-Fong Ai
发明人： Wen-Fa Tsai , Jyong-Fong Liao , Yen-Yu Chen , Chee Wee Liu , Chi-Fong Ai
IPC分类号： H01L21/26
CPC分类号： H01L31/1868 , Y02E10/50 , Y02P70/521
摘要： The present disclosure passivates solar cell defects. Plasma immersion ion implantation (PIII) is used to repair the defects during or after making the solar cell. Hydrogen ion is implanted into absorption layer with different sums of energy to fill gaps of defects or surface recombination centers. Thus, solar cell defects are diminished and carriers are transferred with improved photovoltaic conversion efficiency.
摘要翻译：本公开钝化太阳能电池缺陷。在制造太阳能电池期间或之后，使用等离子体浸没离子注入（PIII）来修复缺陷。将氢离子注入到具有不同的能量之和的吸收层中以填充缺陷或表面复合中心的间隙。因此，太阳能电池缺陷减少，并且载流子随着光伏转换效率的提高而被转移。

7. 发明授权

US09013549B2 Depth map generation for conversion of two-dimensional image data into three-dimensional image data 有权
标题翻译：用于将二维图像数据转换成三维图像数据的深度图生成
公开(公告)号：US09013549B2
公开(公告)日：2015-04-21
申请号：US13479794
申请日：2012-05-24
申请人： Yen-Yu Chen , Ching-Chang Shih
发明人： Yen-Yu Chen , Ching-Chang Shih
IPC分类号： H04N13/00 , G06T7/00
CPC分类号： G06T7/0071 , G06T7/579 , G06T2207/10016 , G06T2207/20021
摘要： A method of depth map generation is disclosed. The method comprises the steps of: scaling down a video unit and a previous video unit to generate a reduced video unit and a reduced previous video unit; dividing the reduced video unit into N1 portions and a buffer into N2 storing units; performing a motion estimation for a target pixel of the reduced video unit to obtain a motion vector based on pixels in a preset search window established in the reduced previous video unit; assigning a depth value to the target pixel according to the motion vector; storing the target pixel in one of the N2 storing units sequentially; and, repeating the steps of performing, assigning and storing until all pixels of the reduced video unit are processed to obtain a motion depth map.
摘要翻译：公开了深度图生成方法。该方法包括以下步骤：缩小视频单元和先前的视频单元，以生成缩小的视频单元和缩小的先前视频单元; 将缩小的视频单元划分成N1部分，将缓冲器分成N2个存储单元; 对所述缩小视频单元的目标像素执行运动估计，以基于在所述缩小的先前视频单元中建立的预设搜索窗口中的像素获得运动矢量; 根据运动矢量向目标像素分配深度值; 将目标像素依次存储在N2存储单元之一中; 并且重复执行，分配和存储的步骤，直到处理缩减视频单元的所有像素以获得运动深度图。

8. 发明授权

US08496289B2 Foldable frame structure 有权
标题翻译：可折叠框架结构
公开(公告)号：US08496289B2
公开(公告)日：2013-07-30
申请号：US13253339
申请日：2011-10-05
申请人： Yuan-Ming Chen , Tuan-Yu Chen , Yen-Yu Chen
发明人： Yuan-Ming Chen , Tuan-Yu Chen , Yen-Yu Chen
IPC分类号： A47C4/00 , A47B3/00
CPC分类号： A47B3/083 , A47B3/0911 , A47C4/045 , A47C4/10 , B62B13/16 , Y10T74/2142
摘要： A pitman-style foldable frame structure has an innovative and unique assembled design. The frame structure includes foldable panels, a central spindle, lateral frames, oblique connecting rods, a control device, and a central connecting frame. The frame structure offers improvement over the prior art in lowering the material cost and increasing structural support strength and rigidity of the pitman-style foldable frame and achieves practical advancement and better industrial utilization effect.
摘要翻译： pitman式可折叠框架结构具有创新和独特的组合设计。框架结构包括可折叠面板，中心主轴，横向框架，倾斜连接杆，控制装置和中央连接框架。框架结构在现有技术中提供了降低材料成本并增加了pitman式可折叠框架的结构支撑强度和刚度的改进，并且实现了实际的进步和更好的工业利用效果。

9. 发明申请

US20090256753A1 DTV Antenna Apparatus 失效
标题翻译： DTV天线装置
公开(公告)号：US20090256753A1
公开(公告)日：2009-10-15
申请号：US12146886
申请日：2008-06-26
申请人： Yen-Yu Chen , Kuo-Ying Su , Yung-Da Lin
发明人： Yen-Yu Chen , Kuo-Ying Su , Yung-Da Lin
IPC分类号： H01Q9/04
CPC分类号： H01Q1/22 , H01Q5/378 , H01Q9/42
摘要： The present invention discloses a DTV antenna apparatus build in a portable device. The portable device includes a system ground. The DTV antenna includes a ground plane with a short circuit point, an extending metal arm with a grounding point and a radiation element. The ground plane is the system ground. The radiation element and the ground plane are arranged in parallel to each other. The extending metal arm connects with the short circuit point. The antenna receives signals with frequencies in the range from 470 MHz to 870 MHz. The radiation element includes a radiation arm and a parasitic arm. The radiation arm has a feeding terminal. The parasitic arm connects with the short circuit point.
摘要翻译：本发明公开了一种构建在便携式设备中的DTV天线装置。便携式设备包括系统接地。 DTV天线包括具有短路点的接地平面，具有接地点的延伸金属臂和辐射元件。地面是系统地面。辐射元件和接地平面彼此平行地布置。延伸金属臂与短路点连接。天线接收频率范围从470 MHz到870 MHz的信号。辐射元件包括辐射臂和寄生臂。辐射臂具有馈电端子。寄生臂与短路点相连。

10. 发明授权

US09136383B2 Contact structure of semiconductor device 有权
标题翻译：半导体器件的接触结构
公开(公告)号：US09136383B2
公开(公告)日：2015-09-15
申请号：US13571201
申请日：2012-08-09
申请人： Clement Hsingjen Wann , Ling-Yen Yeh , Chi-Yuan Shih , Yen-Yu Chen
发明人： Clement Hsingjen Wann , Ling-Yen Yeh , Chi-Yuan Shih , Yen-Yu Chen
IPC分类号： H01L29/49 , H01L29/40 , H01L29/78 , H01L21/8234 , H01L29/51 , H01L21/8238 , H01L29/417 , H01L21/285 , H01L21/762 , H01L29/165
CPC分类号： H01L29/7851 , H01L21/28525 , H01L21/28568 , H01L21/324 , H01L21/76224 , H01L21/823431 , H01L21/823807 , H01L21/823814 , H01L27/0886 , H01L29/165 , H01L29/41791 , H01L29/45 , H01L29/49 , H01L29/495 , H01L29/4958 , H01L29/518 , H01L29/66636 , H01L29/66795 , H01L29/7848 , H01L29/785 , H01L2029/7858 , H01L2924/0002 , H01L2924/00
摘要： The disclosure relates to a semiconductor device. An exemplary structure for a contact structure for a semiconductor device comprises a substrate comprising a major surface and a cavity below the major surface; a strained material in the cavity, wherein a lattice constant of the strained material is different from a lattice constant of the substrate; a Ge-containing dielectric layer over the strained material; and a metal layer over the Ge-containing dielectric layer.
摘要翻译：本公开涉及一种半导体器件。用于半导体器件的接触结构的示例性结构包括：基底，其包括主表面和主表面下方的空腔; 空腔中的应变材料，其中应变材料的晶格常数不同于衬底的晶格常数; 在应变材料上的含Ge介电层; 以及在含Ge介电层上的金属层。

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