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1. 发明授权

US08106389B2 Thin film transistor with semiconductor precursor and liquid crystal display having the same 有权
标题翻译：具有半导体前体的薄膜晶体管和具有相同的液晶显示器
公开(公告)号：US08106389B2
公开(公告)日：2012-01-31
申请号：US12607991
申请日：2009-10-28
申请人： Hsiang-Yuan Cheng , Shin-Chuan Chiang , Shih-Hsiang Lai , Chin-Chih Yu , Bor-Chuan Chuang
发明人： Hsiang-Yuan Cheng , Shin-Chuan Chiang , Shih-Hsiang Lai , Chin-Chih Yu , Bor-Chuan Chuang
IPC分类号： H01L29/12
CPC分类号： H01L29/78681 , H01L27/1292 , H01L29/7869
摘要： A thin film transistor is provided. The thin film transistor includes a substrate, a gate, a source/drain, an insulating layer, and a semiconductor active layer. The gate and the source/drain are respectively deposited on the substrate and are separated by the insulating layer on the substrate. The semiconductor active layer connects the source and the drain. The material of the semiconductor active layer is a semiconductor precursor which produces semiconductor property after being irradiated by a light source. A liquid crystal display which includes the above thin film transistor is also provided.
摘要翻译：提供薄膜晶体管。薄膜晶体管包括衬底，栅极，源极/漏极，绝缘层和半导体有源层。栅极和源极/漏极分别沉积在衬底上并被衬底上的绝缘层分离。半导体有源层连接源极和漏极。半导体有源层的材料是在被光源照射之后产生半导体性能的半导体前体。还提供了一种包括上述薄膜晶体管的液晶显示器。

2. 发明授权

US07745267B2 Method of fabricating active layer of thin film transistor 有权
标题翻译：制造薄膜晶体管有源层的方法
公开(公告)号：US07745267B2
公开(公告)日：2010-06-29
申请号：US11614977
申请日：2006-12-22
申请人： Hsiang-Yuan Cheng , Shin-Chuan Chiang , Shih-Hsiang Lai , Chin-Chih Yu , Bor-Chuan Chuang
发明人： Hsiang-Yuan Cheng , Shin-Chuan Chiang , Shih-Hsiang Lai , Chin-Chih Yu , Bor-Chuan Chuang
IPC分类号： H01L21/00
CPC分类号： H01L29/78681 , H01L27/1292 , H01L29/7869
摘要： A manufacturing method of an active layer of a thin film transistor is provided. The method includes following steps. First a substrate is provided, and a semiconductor precursor solution is then prepared through a liquid process. Thereafter, the semiconductor precursor solution is provided on the substrate to form a semiconductor precursor thin film. After that, a light source is used to irradiate the semiconductor precursor thin film to remove residual solvent and allow the semiconductor precursor thin film to produce semiconductor property, so as to form a semiconductor active layer.
摘要翻译：提供了薄膜晶体管的有源层的制造方法。该方法包括以下步骤。首先提供衬底，然后通过液体工艺制备半导体前体溶液。此后，将半导体前体溶液设置在基板上以形成半导体前体薄膜。之后，使用光源照射半导体前体薄膜以除去残留的溶剂，并使半导体前体薄膜产生半导体性质，从而形成半导体活性层。

3. 发明申请

US20100044696A1 THIN FILM TRANSISTOR AND LIQUID CRYSTAL DISPLAY 有权
标题翻译：薄膜晶体管和液晶显示器
公开(公告)号：US20100044696A1
公开(公告)日：2010-02-25
申请号：US12607991
申请日：2009-10-28
申请人： Hsiang-Yuan Cheng , Shin-Chuan Chiang , Shih-Hsiang Lai , Chin-Chih Yu , Bor-Chuan Chuang
发明人： Hsiang-Yuan Cheng , Shin-Chuan Chiang , Shih-Hsiang Lai , Chin-Chih Yu , Bor-Chuan Chuang
IPC分类号： H01L51/54 , H01L29/786 , H01L51/30
CPC分类号： H01L29/78681 , H01L27/1292 , H01L29/7869
摘要： A thin film transistor is provided. The thin film transistor includes a substrate, a gate, a source/drain, an insulating layer, and a semiconductor active layer. The gate and the source/drain are respectively deposited on the substrate and are separated by the insulating layer on the substrate. The semiconductor active layer connects the source and the drain. The material of the semiconductor active layer is a semiconductor precursor which produces semiconductor property after being irradiated by a light source. A liquid crystal display which includes the above thin film transistor is also provided.
摘要翻译：提供薄膜晶体管。薄膜晶体管包括衬底，栅极，源极/漏极，绝缘层和半导体有源层。栅极和源极/漏极分别沉积在衬底上并被衬底上的绝缘层分离。半导体有源层连接源极和漏极。半导体有源层的材料是在被光源照射之后产生半导体性能的半导体前体。还提供了一种包括上述薄膜晶体管的液晶显示器。

4. 发明申请

US20090305473A1 METHOD FOR FABRICATING THIN FILM TRANSISTOR 有权
标题翻译：薄膜晶体管的制作方法
公开(公告)号：US20090305473A1
公开(公告)日：2009-12-10
申请号：US12258451
申请日：2008-10-27
申请人： Fang-Chen Luo , Shuo-Wei Liang , Shin-Chuan Chiang , Chao-Nan Chen , Chin-Chih Yu
发明人： Fang-Chen Luo , Shuo-Wei Liang , Shin-Chuan Chiang , Chao-Nan Chen , Chin-Chih Yu
IPC分类号： H01L21/336
CPC分类号： H01L29/7869
摘要： A method for fabricating a thin film transistor is provided. A gate is formed on a substrate. A gate insulating layer is formed on the substrate to cover the gate. A metal oxide material layer is formed on the gate insulating layer. A photoresist layer is formed on the metal oxide material layer, in which a thickness of the photoresist layer above the gate is larger than that of the photoresist layer above two sides adjacent to the gate. A portion of the metal oxide material layer is removed to form a metal oxide active layer by using the photoresist layer as a mask. The photoresist layer above the two sides adjacent to the gate is removed and the remaining photoresist layer covers a portion of the metal oxide active layer. A source and a drain are formed on the metal oxide active layer covered by the photoresist layer.
摘要翻译：提供一种制造薄膜晶体管的方法。栅极形成在基板上。在基板上形成栅极绝缘层以覆盖栅极。在栅极绝缘层上形成金属氧化物材料层。在金属氧化物材料层上形成光致抗蚀剂层，其中栅极上方的光致抗蚀剂层的厚度大于与栅极相邻的两侧上方的光致抗蚀剂层的厚度。通过使用光致抗蚀剂层作为掩模，去除金属氧化物材料层的一部分以形成金属氧化物活性层。去除与栅极相邻的两侧上方的光致抗蚀剂层，剩余的光致抗蚀剂层覆盖金属氧化物活性层的一部分。在由光致抗蚀剂层覆盖的金属氧化物有源层上形成源极和漏极。

5. 发明申请

US20080057631A1 THIN FILM TRANSISTOR, METHOD OF FABRICATING ACTIVE LAYER THEREOF, AND LIQUID CRYSTAL DISPLAY 有权
标题翻译：薄膜晶体管，其活性层的制备方法和液晶显示
公开(公告)号：US20080057631A1
公开(公告)日：2008-03-06
申请号：US11614977
申请日：2006-12-22
申请人： Hsiang-Yuan Cheng , Shin-Chuan Chiang , Shih-Hsiang Lai , Chin-Chih Yu , Bor-Chuan Chuang
发明人： Hsiang-Yuan Cheng , Shin-Chuan Chiang , Shih-Hsiang Lai , Chin-Chih Yu , Bor-Chuan Chuang
IPC分类号： H01L21/84
CPC分类号： H01L29/78681 , H01L27/1292 , H01L29/7869
摘要： A manufacturing method of an active layer of a thin film transistor is provided. The method includes following steps. First a substrate is provided, and a semiconductor precursor solution is then prepared through a liquid process. Thereafter, the semiconductor precursor solution is provided on the substrate to form a semiconductor precursor thin film. After that, a light source is used to irradiate the semiconductor precursor thin film to remove residual solvent and allow the semiconductor precursor thin film to produce semiconductor property, so as to form a semiconductor active layer.
摘要翻译：提供了薄膜晶体管的有源层的制造方法。该方法包括以下步骤。首先提供衬底，然后通过液体工艺制备半导体前体溶液。此后，将半导体前体溶液设置在基板上以形成半导体前体薄膜。之后，使用光源照射半导体前体薄膜以除去残留的溶剂，并使半导体前体薄膜产生半导体性质，从而形成半导体活性层。

6. 发明授权

US08222095B2 Method for fabricating thin film transistor 有权
标题翻译：制造薄膜晶体管的方法
公开(公告)号：US08222095B2
公开(公告)日：2012-07-17
申请号：US12258451
申请日：2008-10-27
申请人： Fang-Chen Luo , Shuo-Wei Liang , Shin-Chuan Chiang , Chao-Nan Chen , Chin-Chih Yu
发明人： Fang-Chen Luo , Shuo-Wei Liang , Shin-Chuan Chiang , Chao-Nan Chen , Chin-Chih Yu
IPC分类号： H01L21/00
CPC分类号： H01L29/7869
摘要： A method for fabricating a thin film transistor is provided. A gate is formed on a substrate. A gate insulating layer is formed on the substrate to cover the gate. A metal oxide material layer is formed on the gate insulating layer. A photoresist layer is formed on the metal oxide material layer, in which a thickness of the photoresist layer above the gate is larger than that of the photoresist layer above two sides adjacent to the gate. A portion of the metal oxide material layer is removed to form a metal oxide active layer by using the photoresist layer as a mask. The photoresist layer above the two sides adjacent to the gate is removed and the remaining photoresist layer covers a portion of the metal oxide active layer. A source and a drain are formed on the metal oxide active layer covered by the photoresist layer.
摘要翻译：提供一种制造薄膜晶体管的方法。栅极形成在基板上。在基板上形成栅极绝缘层以覆盖栅极。在栅极绝缘层上形成金属氧化物材料层。在金属氧化物材料层上形成光致抗蚀剂层，其中栅极上方的光致抗蚀剂层的厚度大于与栅极相邻的两侧上方的光致抗蚀剂层的厚度。通过使用光致抗蚀剂层作为掩模，去除金属氧化物材料层的一部分以形成金属氧化物活性层。去除与栅极相邻的两侧上方的光致抗蚀剂层，剩余的光致抗蚀剂层覆盖金属氧化物活性层的一部分。在由光致抗蚀剂层覆盖的金属氧化物有源层上形成源极和漏极。

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