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1. 发明授权

US07120761B2 Multi-port memory based on DRAM core 有权
公开(公告)号：US07120761B2
公开(公告)日：2006-10-10
申请号：US10284092
申请日：2002-10-31
申请人： Yasurou Matsuzaki , Takaaki Suzuki , Masafumi Yamazaki , Kenichi Kawasaki , Shinnosuke Kamata , Ayako Sato , Masato Matsumiya
发明人： Yasurou Matsuzaki , Takaaki Suzuki , Masafumi Yamazaki , Kenichi Kawasaki , Shinnosuke Kamata , Ayako Sato , Masato Matsumiya
IPC分类号： G06F12/00
CPC分类号： G11C8/16 , G06F13/1605 , G11C7/1039 , G11C7/1075 , G11C7/1078 , G11C7/22 , G11C8/18 , G11C11/24 , G11C11/406 , G11C11/40603 , G11C11/40615 , G11C11/409 , G11C11/4093 , G11C2207/107 , G11C2207/108
摘要： A semiconductor memory device includes a plurality of N external ports, each of which receives commands, and an internal circuit which performs at least N access operations during a minimum interval of the commands that are input into one of the external ports.

2. 发明申请

US20060294322A1 Multi-port memory based on DRAM core 有权
公开(公告)号：US20060294322A1
公开(公告)日：2006-12-28
申请号：US11512319
申请日：2006-08-30
申请人： Yasurou Matsuzaki , Takaaki Suzuki , Masafumi Yamazaki , Kenichi Kawasaki , Shinnosuke Kamata , Ayako Sato , Masato Matsumiya
发明人： Yasurou Matsuzaki , Takaaki Suzuki , Masafumi Yamazaki , Kenichi Kawasaki , Shinnosuke Kamata , Ayako Sato , Masato Matsumiya
IPC分类号： G06F13/28
CPC分类号： G11C8/16 , G06F13/1605 , G11C7/1039 , G11C7/1075 , G11C7/1078 , G11C7/22 , G11C8/18 , G11C11/24 , G11C11/406 , G11C11/40603 , G11C11/40615 , G11C11/409 , G11C11/4093 , G11C2207/107 , G11C2207/108
摘要： A semiconductor memory device includes a plurality of N external ports, each of which receives commands, and an internal circuit which performs at least N access operations during a minimum interval of the commands that are input into one of the external ports.

3. 发明授权

US07911825B2 Multi-port memory based on DRAM core 有权
标题翻译：基于DRAM内核的多端口存储器
公开(公告)号：US07911825B2
公开(公告)日：2011-03-22
申请号：US11512319
申请日：2006-08-30
申请人： Yasurou Matsuzaki , Takaaki Suzuki , Masafumi Yamazaki , Kenichi Kawasaki , Shinnosuke Kamata , Ayako Sato , Masato Matsumiya
发明人： Yasurou Matsuzaki , Takaaki Suzuki , Masafumi Yamazaki , Kenichi Kawasaki , Shinnosuke Kamata , Ayako Sato , Masato Matsumiya
IPC分类号： G11C11/24
CPC分类号： G11C8/16 , G06F13/1605 , G11C7/1039 , G11C7/1075 , G11C7/1078 , G11C7/22 , G11C8/18 , G11C11/24 , G11C11/406 , G11C11/40603 , G11C11/40615 , G11C11/409 , G11C11/4093 , G11C2207/107 , G11C2207/108
摘要： A semiconductor memory device includes a plurality of N external ports, each of which receives commands, and an internal circuit which performs at least N access operations during a minimum interval of the commands that are input into one of the external ports.
摘要翻译：半导体存储器件包括多个N个外部端口，每个N个外部端口接收命令;以及内部电路，其在输入到一个外部端口的命令的最小间隔期间执行至少N次访问操作。

4. 发明授权

US6063640A Semiconductor wafer testing method with probe pin contact 失效
标题翻译：半导体晶圆测试方法与探针接触
公开(公告)号：US6063640A
公开(公告)日：2000-05-16
申请号：US30349
申请日：1998-02-25
申请人： Masataka Mizukoshi , Hidehiko Akasaki , Masao Nakano , Yasuhiro Fujii , Shinnosuke Kamata , Makoto Yanagisawa , Yasurou Matsuzaki , Toyonobu Yamada , Masami Matsuoka , Hiroyoshi Tomita
发明人： Masataka Mizukoshi , Hidehiko Akasaki , Masao Nakano , Yasuhiro Fujii , Shinnosuke Kamata , Makoto Yanagisawa , Yasurou Matsuzaki , Toyonobu Yamada , Masami Matsuoka , Hiroyoshi Tomita
IPC分类号： H01L23/58 , G01R31/26 , H01L21/66
CPC分类号： H01L22/32 , H01L22/22 , H01L2224/05554 , Y10S438/977
摘要： A semiconductor wafer testing method includes a pre-test step for forming a temporary test film on a surface of a semiconductor wafer, a test step for testing the semiconductor wafer by applying a probe to the temporary test film and a post-test step for exfoliating the temporary test film from the surface of the semiconductor wafer. The temporary test film includes test electrode groups each provided with a plurality of regularly arranged test electrodes, and wiring patterns for electrically connecting the test electrodes with corresponding ones of semiconductor unit electrodes in respective semiconductor units on the semiconductor wafer. Probe pins of said probe are arranged so as to be aligned with corresponding ones of the test electrodes of the respective test electrode groups.
摘要翻译：半导体晶片测试方法包括：在半导体晶片的表面上形成临时测试膜的预测试步骤，通过向临时测试膜施加探针来测试半导体晶片的测试步骤和用于去角质的后测试步骤来自半导体晶片表面的临时测试膜。临时测试膜包括各自设置有多个规则排列的测试电极的测试电极组和用于将测试电极与半导体晶片上的各个半导体单元中的相应半导体单元电极电连接的布线图案。所述探针的探头针布置成与各个测试电极组的相应测试电极对齐。

5. 发明申请

US20100146201A1 MEMORY DEVICE, MEMORY CONTROLLER AND MEMORY SYSTEM 有权
公开(公告)号：US20100146201A1
公开(公告)日：2010-06-10
申请号：US12612215
申请日：2009-11-04
申请人： Tomohiro Kawakubo , Syusaku Yamaguchi , Hitoshi Ikeda , Toshiya Uchida , Hiroyuki Kobayashi , Tatsuya Kanda , Yoshinobu Yamamoto , Satoru Shirakawa , Tetsuo Miyamoto , Tatsushi Otsuka , Hidenaga Takahashi , Masanori Kurita , Shinnosuke Kamata , Ayako Sato
发明人： Tomohiro Kawakubo , Syusaku Yamaguchi , Hitoshi Ikeda , Toshiya Uchida , Hiroyuki Kobayashi , Tatsuya Kanda , Yoshinobu Yamamoto , Satoru Shirakawa , Tetsuo Miyamoto , Tatsushi Otsuka , Hidenaga Takahashi , Masanori Kurita , Shinnosuke Kamata , Ayako Sato
IPC分类号： G06F12/00
CPC分类号： G11C11/406 , G11C7/1027 , G11C8/12 , G11C11/40618 , G11C11/4087
摘要： Provided is a memory device in which the decrease of the effective bandwidth caused by the refresh operation of the memory device has been solved, a memory controller of the memory device, and a memory system thereof. A memory device that is operated in response to a command from a memory controller has a plurality of banks that respectively have memory cores including memory cell arrays and decoders and are selected by bank addresses; and a control circuit, which, in response to a background refresh command, causes the memory cores within refresh target banks set by the memory controller to successively execute refresh operation a number of times corresponding to refresh burst length that is set by the memory controller, and, in response to a normal operation command, further causes the memory cores within banks other than the refresh target banks and selected by the bank addresses to execute normal memory operation corresponding to the normal operation command, during the refresh operation executed by the memory cores within the refresh target banks.

6. 发明申请

US20080181027A1 Memory device, memory controller and memory system 有权
公开(公告)号：US20080181027A1
公开(公告)日：2008-07-31
申请号：US12000952
申请日：2007-12-19
申请人： Takahiro Sato , Toshiya Uchida , Tatsuya Kanda , Tetsuo Miyamoto , Satoru Shirakawa , Yoshinobu Yamamoto , Tatsushi Otsuka , Hidenaga Takahashi , Masanori Kurita , Shinnosuke Kamata , Ayako Sato
发明人： Takahiro Sato , Toshiya Uchida , Tatsuya Kanda , Tetsuo Miyamoto , Satoru Shirakawa , Yoshinobu Yamamoto , Tatsushi Otsuka , Hidenaga Takahashi , Masanori Kurita , Shinnosuke Kamata , Ayako Sato
IPC分类号： G11C7/00 , G11C8/00
CPC分类号： G11C11/4087 , G09G5/393 , G09G5/395 , G11C8/12
摘要： An image memory, image memory system, and memory controller that are capable of efficiently accessing a rectangular area of two-dimensionally arrayed data are provided. The memory device has: a memory cell array that has a plurality of memory unit areas, each of which is selected by addresses; a plurality of input/output terminals; and an input/output unit provided between the memory cell array and the plurality of input/output terminals. Each of the memory unit areas stores therein data of a plurality of bytes or bits corresponding to the plurality of input/output terminals respectively, and the memory cell array and the input/output unit access a plurality of bytes or bits stored in a first memory unit area corresponding to the input address and in a second memory unit area adjacent to the first memory unit on the basis of the input address and combination information of the bytes or bits in response to a first operation code, and then, from the plurality of bytes or bits within the accessed first and second memory unit areas, associate a combination of the plurality of bytes or bits based on the combination information, with the plurality of input/output terminals.

7. 发明申请

US20080151677A1 Memory device, memory controller and memory system 有权
标题翻译：内存设备，内存控制器和内存系统
公开(公告)号：US20080151677A1
公开(公告)日：2008-06-26
申请号：US11698286
申请日：2007-01-26
申请人： Takahiko Sato , Toshiya Uchida , Tatsuya Kanda , Tetsuo Miyamoto , Satoru Shirakawa , Yoshinobu Yamamoto , Tatsushi Otsuka , Hidenaga Takahashi , Masanori Kurita , Shinnosuke Kamata , Ayako Sato
发明人： Takahiko Sato , Toshiya Uchida , Tatsuya Kanda , Tetsuo Miyamoto , Satoru Shirakawa , Yoshinobu Yamamoto , Tatsushi Otsuka , Hidenaga Takahashi , Masanori Kurita , Shinnosuke Kamata , Ayako Sato
IPC分类号： G11C8/12
CPC分类号： G11C11/4087 , G09G5/393 , G09G5/395 , G11C8/12
摘要： An image memory, image memory system, and memory controller that are capable of efficiently accessing a rectangular area of two-dimensionally arrayed data are provided. The memory device has: a memory cell array that has a plurality of memory unit areas, each of which is selected by addresses; a plurality of input/output terminals; and an input/output unit provided between the memory cell array and the plurality of input/output terminals. Each of the memory unit areas stores therein data of a plurality of bytes or bits corresponding to the plurality of input/output terminals respectively, and the memory cell array and the input/output unit access a plurality of bytes or bits stored in a first memory unit area corresponding to the input address and in a second memory unit area adjacent to the first memory unit on the basis of the input address and combination information of the bytes or bits in response to a first operation code, and then, from the plurality of bytes or bits within the accessed first and second memory unit areas, associate a combination of the plurality of bytes or bits based on the combination information, with the plurality of input/output terminals.
摘要翻译：提供能够有效地访问二维排列数据的矩形区域的图像存储器，图像存储器系统和存储器控制器。存储装置具有：具有多个存储单元区域的存储单元阵列，每个存储单元区域由地址选择; 多个输入/输出端子; 以及设置在存储单元阵列和多个输入/输出端子之间的输入/输出单元。每个存储单元区域分别存储与多个输入/输出端子相对应的多个字节或位的数据，并且存储单元阵列和输入/输出单元访问存储在第一存储器中的多个字节或位基于与第一操作码相对应的字节或比特的输入地址和组合信息，与第一存储器单元相邻的第二存储器单元区域中的对应于输入地址的单位区域和与第一存储器单元相邻的第二存储单元区域中，在所访问的第一和第二存储器单元区域内的字节或比特，基于组合信息将多个字节或比特的组合与多个输入/输出终端相关联。

8. 发明授权

US07729200B2 Memory device, memory controller and memory system 失效
公开(公告)号：US07729200B2
公开(公告)日：2010-06-01
申请号：US12000840
申请日：2007-12-18
申请人： Hitoshi Ikeda , Takahiko Sato , Tatsuya Kanda , Toshiya Uchida , Hiroyuki Kobayashi , Satoru Shirakawa , Tetsuo Miyamoto , Yoshinobu Yamamoto , Tatsushi Otsuka , Hidenaga Takahashi , Masanori Kurita , Shinnosuke Kamata , Ayako Sato
发明人： Hitoshi Ikeda , Takahiko Sato , Tatsuya Kanda , Toshiya Uchida , Hiroyuki Kobayashi , Satoru Shirakawa , Tetsuo Miyamoto , Yoshinobu Yamamoto , Tatsushi Otsuka , Hidenaga Takahashi , Masanori Kurita , Shinnosuke Kamata , Ayako Sato
IPC分类号： G11C7/10
CPC分类号： G11C8/12 , G06F12/0207
摘要： The memory device has: a plurality of banks, each of which has a memory cell array having a plurality of page areas that are selected by row addresses respectively, and each of which is selected by a bank address; a row controller that controls activation of the page areas within each of the banks in response to a first operation code; and a group of data input/output terminals. A memory unit area within each of the activated page areas is accessed based on the column address. The row controller generates bank activation signals for the plurality of banks in response to multi-bank information data and a supplied bank address that are supplied along with the first command, and generates the row address of each of the plurality of banks in response to the supplied bank address and a supplied row address. The plurality of banks activate the page areas in response to the bank activation signals and the row addresses generated by the row address calculator.

9. 发明申请

US20090027988A1 Memory device, memory controller and memory system 有权
标题翻译：内存设备，内存控制器和内存系统
公开(公告)号：US20090027988A1
公开(公告)日：2009-01-29
申请号：US12000953
申请日：2007-12-19
申请人： Takahiko Sato , Toshiya Uchida , Tatsuya Kanda , Tetsuo Miyamoto , Satoru Shirakawa , Yoshinobu Yamamoto , Tatsushi Otsuka , Hidenaga Takahashi , Masanori Kurita , Shinnosuke Kamata , Ayako Sato
发明人： Takahiko Sato , Toshiya Uchida , Tatsuya Kanda , Tetsuo Miyamoto , Satoru Shirakawa , Yoshinobu Yamamoto , Tatsushi Otsuka , Hidenaga Takahashi , Masanori Kurita , Shinnosuke Kamata , Ayako Sato
IPC分类号： G11C7/00 , G11C8/00
CPC分类号： G11C11/4087 , G09G5/393 , G09G5/395 , G11C8/12
摘要： An image memory, image memory system, and memory controller that are capable of efficiently accessing a rectangular area of two-dimensionally arrayed data are provided. The memory device has: a memory cell array that has a plurality of memory unit areas, each of which is selected by addresses; a plurality of input/output terminals; and an input/output unit provided between the memory cell array and the plurality of input/output terminals. Each of the memory unit areas stores therein data of a plurality of bytes or bits corresponding to the plurality of input/output terminals respectively, and the memory cell array and the input/output unit access a plurality of bytes or bits stored in a first memory unit area corresponding to the input address and in a second memory unit area adjacent to the first memory unit on the basis of the input address and combination information of the bytes or bits in response to a first operation code, and then, from the plurality of bytes or bits within the accessed first and second memory unit areas, associate a combination of the plurality of bytes or bits based on the combination information, with the plurality of input/output terminals.
摘要翻译：提供能够有效地访问二维排列数据的矩形区域的图像存储器，图像存储器系统和存储器控制器。存储装置具有：具有多个存储单元区域的存储单元阵列，每个存储单元区域由地址选择; 多个输入/输出端子; 以及设置在存储单元阵列和多个输入/输出端子之间的输入/输出单元。每个存储单元区域分别存储与多个输入/输出端子相对应的多个字节或位的数据，并且存储单元阵列和输入/输出单元访问存储在第一存储器中的多个字节或位基于与第一操作码相对应的字节或比特的输入地址和组合信息，与第一存储器单元相邻的第二存储器单元区域中的对应于输入地址的单位区域和与第一存储器单元相邻的第二存储器单元区域中，在所访问的第一和第二存储器单元区域内的字节或比特，基于组合信息将多个字节或比特的组合与多个输入/输出终端相关联。

10. 发明申请

US20080189467A1 Memory device, memory controller and memory system 失效
公开(公告)号：US20080189467A1
公开(公告)日：2008-08-07
申请号：US12000840
申请日：2007-12-18
申请人： Hitoshi Ikeda , Takahiko Sato , Tatsuya Kanda , Toshiya Uchida , Hiroyuki Kobayashi , Satoru Shirakawa , Tetsuo Miyamoto , Yoshinobu Yamamoto , Tatsushi Otsuka , Hidenaga Takahashi , Masanori Kurita , Shinnosuke Kamata , Ayako Sato
发明人： Hitoshi Ikeda , Takahiko Sato , Tatsuya Kanda , Toshiya Uchida , Hiroyuki Kobayashi , Satoru Shirakawa , Tetsuo Miyamoto , Yoshinobu Yamamoto , Tatsushi Otsuka , Hidenaga Takahashi , Masanori Kurita , Shinnosuke Kamata , Ayako Sato
IPC分类号： G06F12/00
CPC分类号： G11C8/12 , G06F12/0207
摘要： The memory device has: a plurality of banks, each of which has a memory cell array having a plurality of page areas that are selected by row addresses respectively, and each of which is selected by a bank address; a row controller that controls activation of the page areas within each of the banks in response to a first operation code; and a group of data input/output terminals. A memory unit area within each of the activated page areas is accessed based on the column address. The row controller generates bank activation signals for the plurality of banks in response to multi-bank information data and a supplied bank address that are supplied along with the first command, and generates the row address of each of the plurality of banks in response to the supplied bank address and a supplied row address. The plurality of banks activate the page areas in response to the bank activation signals and the row addresses generated by the row address calculator.

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