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1. 发明授权

US6063640A Semiconductor wafer testing method with probe pin contact 失效
标题翻译：半导体晶圆测试方法与探针接触
公开(公告)号：US6063640A
公开(公告)日：2000-05-16
申请号：US30349
申请日：1998-02-25
申请人： Masataka Mizukoshi , Hidehiko Akasaki , Masao Nakano , Yasuhiro Fujii , Shinnosuke Kamata , Makoto Yanagisawa , Yasurou Matsuzaki , Toyonobu Yamada , Masami Matsuoka , Hiroyoshi Tomita
发明人： Masataka Mizukoshi , Hidehiko Akasaki , Masao Nakano , Yasuhiro Fujii , Shinnosuke Kamata , Makoto Yanagisawa , Yasurou Matsuzaki , Toyonobu Yamada , Masami Matsuoka , Hiroyoshi Tomita
IPC分类号： H01L23/58 , G01R31/26 , H01L21/66
CPC分类号： H01L22/32 , H01L22/22 , H01L2224/05554 , Y10S438/977
摘要： A semiconductor wafer testing method includes a pre-test step for forming a temporary test film on a surface of a semiconductor wafer, a test step for testing the semiconductor wafer by applying a probe to the temporary test film and a post-test step for exfoliating the temporary test film from the surface of the semiconductor wafer. The temporary test film includes test electrode groups each provided with a plurality of regularly arranged test electrodes, and wiring patterns for electrically connecting the test electrodes with corresponding ones of semiconductor unit electrodes in respective semiconductor units on the semiconductor wafer. Probe pins of said probe are arranged so as to be aligned with corresponding ones of the test electrodes of the respective test electrode groups.
摘要翻译：半导体晶片测试方法包括：在半导体晶片的表面上形成临时测试膜的预测试步骤，通过向临时测试膜施加探针来测试半导体晶片的测试步骤和用于去角质的后测试步骤来自半导体晶片表面的临时测试膜。临时测试膜包括各自设置有多个规则排列的测试电极的测试电极组和用于将测试电极与半导体晶片上的各个半导体单元中的相应半导体单元电极电连接的布线图案。所述探针的探头针布置成与各个测试电极组的相应测试电极对齐。

2. 发明授权

US5537354A Semiconductor memory device and method of forming the same 失效
标题翻译：半导体存储器件及其形成方法
公开(公告)号：US5537354A
公开(公告)日：1996-07-16
申请号：US357307
申请日：1994-12-14
申请人： Hirohiko Mochizuki , Yoshihiro Takemae , Yukinori Kodama , Makoto Yanagisawa , Hiroyoshi Tomita
发明人： Hirohiko Mochizuki , Yoshihiro Takemae , Yukinori Kodama , Makoto Yanagisawa , Hiroyoshi Tomita
IPC分类号： G11C11/401 , F02B75/02 , G11C7/10 , G11C11/407 , G11C11/409 , G11C13/00
CPC分类号： G11C7/1072 , F02B2075/025
摘要： A method of making an SDRAM (synchronous dynamic random access memory) into either a low-speed type or a high-speed type includes the steps of determining an electrical connection of a predetermined electrode of the SDRAM, and providing the predetermined electrode with a voltage level defined by the electrical connection, the voltage level determining whether the SDRAM is made into the low-speed type or the high speed type, wherein the low-speed type can carry out consecutive writing operations at a low clock rate for two addresses having the same row address, and the high-speed type can carry out simultaneous writing operations at a high clock rate for two addresses having the same row address and consecutive column addresses.
摘要翻译：将SDRAM（同步动态随机存取存储器）制成低速型或高速型的方法包括以下步骤：确定SDRAM的预定电极的电连接，并为预定电极提供电压由电气连接限定的电平，电压电平确定SDRAM是低速型还是高速型，其中低速类型可以以低时钟速率对具有相同的行地址，并且高速类型可以以具有相同行地址和连续列地址的两个地址以高时钟速率执行同时写入操作。

3. 发明授权

US5592433A Semiconductor memory device having a capability for controlled activation of sense amplifiers 失效
标题翻译：具有用于感测放大器的受控激活能力的半导体存储器件
公开(公告)号：US5592433A
公开(公告)日：1997-01-07
申请号：US643834
申请日：1996-05-07
申请人： Hiroyoshi Tomita , Makoto Yanagisawa , Yukinori Kodama
发明人： Hiroyoshi Tomita , Makoto Yanagisawa , Yukinori Kodama
IPC分类号： G11C7/06 , G11C13/00
CPC分类号： G11C7/065
摘要： A semiconductor memory device includes a memory cell array in which a number of sense amplifiers are provided, a plurality of segmented drive lines each connected to a group of sense amplifiers for driving the same, each of the segmented drive lines being formed of first and second drive line segments forming a pair, and a number of trunks for supplying electric power to the segmented drive lines. Each of the trunks includes a first conductor strip extending from a first side of the memory cell array toward a second side for connection to a plurality of the first drive line segments upon crossing the same, and a second conductor strip extending from the second side of the memory cell array toward the first side for connection to a plurality of the second drive line segments upon crossing the same. The first and second conductor strips have distal end parts having a reduced width and a mutually complementary shape, such that the first and second conductor strips are disposed to form a straight strip having a substantially constant width throughout the memory cell array.
摘要翻译：一种半导体存储器件包括其中提供多个读出放大器的存储单元阵列，多个分段驱动线，每个驱动线连接到用于驱动读出放大器的一组读出放大器，每个分段驱动线由第一和第二形成一对的驱动线段和用于向分段驱动线提供电力的多个中继线。每个中继线包括从存储单元阵列的第一侧向第二侧延伸的第一导体条，用于在与第一驱动线段交叉时与多个第一驱动线段连接，第二导体条从第二侧延伸所述存储单元阵列朝向所述第一侧，用于在与所述第二驱动线段交叉时连接到所述第二驱动线段。第一和第二导体条具有具有减小的宽度和相互互补形状的远端部分，使得第一和第二导体条被设置成形成整个存储单元阵列具有基本恒定的宽度的直条。

4. 发明授权

US5384726A Semiconductor memory device having a capability for controlled activation of sense amplifiers 失效
标题翻译：具有用于感测放大器的受控激活能力的半导体存储器件
公开(公告)号：US5384726A
公开(公告)日：1995-01-24
申请号：US193535
申请日：1994-02-08
申请人： Hiroyoshi Tomita , Makoto Yanagisawa , Yukinori Kodama
发明人： Hiroyoshi Tomita , Makoto Yanagisawa , Yukinori Kodama
IPC分类号： G11C7/06 , G11C5/06
CPC分类号： G11C7/065
摘要： A semiconductor memory device includes a memory cell array in which a number of sense amplifiers are provided, a plurality of segmented drive lines each connected to a group of sense amplifiers for driving the same, each of the segmented drive lines being formed of first and second drive line segments forming a pair, and a number of trunks for supplying electric power to the segmented drive lines. Each of the trunks includes a first conductor strip extending from a first side of the memory cell array toward a second side for connection to a plurality of the first drive line segments upon crossing the same, and a second conductor strip extending from the second side of the memory cell array toward the first side for connection to a plurality of the second drive line segments upon crossing the same. The first and second conductor strips have distal end parts having a reduced width and a mutually complementary shape, such that the first and second conductor strips are disposed to form a straight strip having a substantially constant width throughout the memory cell array.
摘要翻译：一种半导体存储器件包括其中提供多个读出放大器的存储单元阵列，多个分段驱动线，每个驱动线连接到用于驱动读出放大器的一组读出放大器，每个分段驱动线由第一和第二形成一对的驱动线段和用于向分段驱动线提供电力的多个中继线。每个中继线包括从存储单元阵列的第一侧向第二侧延伸的第一导体条，用于在与第一驱动线段交叉时与多个第一驱动线段连接，第二导体条从第二侧延伸所述存储单元阵列朝向所述第一侧，用于在与所述第二驱动线段交叉时连接到所述第二驱动线段。第一和第二导体条具有具有减小的宽度和相互互补形状的远端部分，使得第一和第二导体条被设置成形成整个存储单元阵列具有基本恒定的宽度的直条。

5. 发明授权

US4771407A Semiconductor integrated circuit having function for switching operational mode of internal circuit 失效
标题翻译：具有切换内部电路工作模式功能的半导体集成电路
公开(公告)号：US4771407A
公开(公告)日：1988-09-13
申请号：US79061
申请日：1987-07-29
申请人： Yoshihiro Takemae , Shigeki Nozaki , Masao Nakano , Kimiaki Sato , Hatsuo Miyahara , Nobumi Kodama , Makoto Yanagisawa , Yasuhiro Takada , Satoshi Momozono
发明人： Yoshihiro Takemae , Shigeki Nozaki , Masao Nakano , Kimiaki Sato , Hatsuo Miyahara , Nobumi Kodama , Makoto Yanagisawa , Yasuhiro Takada , Satoshi Momozono
IPC分类号： H03K3/353 , G01R31/28 , G11C11/401 , G11C29/46 , G11C11/40
CPC分类号： G11C29/46
摘要： In a semiconductor integrated circuit having first and second power supply lines for receiving a power supply voltage, an external input terminal for receiving an input signal, and a high voltage detection circuit for detecting at the external input terminal a high voltage higher than a predetermined voltage which is higher than the power supply voltage, the high voltage detection circuit comprises an input circuit connected to the external input terminal for generating circuit for generating a reference voltage; and a differential voltage amplifier connected to receive the detection voltage and the reference voltage for amplifying the difference between the detection voltage and the reference voltage, to thereby determine whether the high voltage is applied, the input circuit comprising; a level shift element connected to the external input terminal for providing the detection voltage; an impedance element connected between the level shift element and the second power supply line; and a leak current compensating element connected between the first power supply line and the level shift element for allowing a current to flow from the first power supply line through the leak current compensating element and the impedance element to the second power supply line when the high voltage is not applied to the external input terminal.
摘要翻译：在具有用于接收电源电压的第一和第二电源线，用于接收输入信号的外部输入端子和用于在外部输入端子处检测高于预定电压的高电压的高电压检测电路的半导体集成电路中，高电压检测电路包括连接到外部输入端的输入电路，用于产生用于产生参考电压的电路; 连接的差分电压放大器，用于接收检测电压和参考电压，用于放大检测电压和参考电压之间的差值，从而确定是否施加高电压，输入电路包括：连接到所述外部输入端子以提供所述检测电压的电平移动元件; 连接在电平移位元件和第二电源线之间的阻抗元件; 以及泄漏电流补偿元件，其连接在所述第一电源线和所述电平移动元件之间，用于当高电压时允许电流从所述第一电源线流过所述漏电流补偿元件和所述阻抗元件流到所述第二电源线不适用于外部输入端子。

6. 发明授权

US5663917A Semiconductor circuit having MOS circuit for use in strong electric field 失效
标题翻译：具有用于强电场的MOS电路的半导体电路
公开(公告)号：US5663917A
公开(公告)日：1997-09-02
申请号：US510862
申请日：1995-08-03
申请人： Tomoharu Oka , Hirohiko Mochizuki , Yasuhiro Fujii , Makoto Yanagisawa
发明人： Tomoharu Oka , Hirohiko Mochizuki , Yasuhiro Fujii , Makoto Yanagisawa
IPC分类号： G11C11/407 , G11C8/10 , H01L21/822 , H01L27/04 , H03K17/0812 , H03K17/10 , H03K19/00 , G11C8/00 , H03K5/00
CPC分类号： H03K17/102 , G11C8/10 , H03K17/08122
摘要： A semiconductor circuit has a first transistor, a second transistor, a third transistor, and a fourth transistor. The first and fourth transistors are a first conduction type, and the second and third transistors are a second conduction type opposite to the first conduction type. The semiconductor circuit employs a first power supply line for supplying a first voltage, a second power supply line for supplying a second voltage, and a third power supply line for supplying a third voltage outside of the range determined by the first voltage and the second voltage. The first, second, and third transistors are connected in series between the second power supply line and the third power supply line, and the fourth transistor is connected between an input terminal and a control electrode of the first transistor.
摘要翻译：半导体电路具有第一晶体管，第二晶体管，第三晶体管和第四晶体管。第一和第四晶体管是第一导电类型，第二和第三晶体管是与第一导电类型相反的第二导电类型。半导体电路采用用于提供第一电压的第一电源线，用于提供第二电压的第二电源线，以及用于将由第一电压和第二电压确定的范围之外的第三电压提供的第三电源线。第一，第二和第三晶体管串联连接在第二电源线和第三电源线之间，第四晶体管连接在第一晶体管的输入端和控制电极之间。

7. 发明授权

US09147363B2 Display device 有权
公开(公告)号：US09147363B2
公开(公告)日：2015-09-29
申请号：US13443146
申请日：2012-04-10
申请人： Hajime Kimura , Yasunori Yoshida , Hideaki Shishido , Atsushi Umezaki , Makoto Yanagisawa , Shunpei Yamazaki
发明人： Hajime Kimura , Yasunori Yoshida , Hideaki Shishido , Atsushi Umezaki , Makoto Yanagisawa , Shunpei Yamazaki
IPC分类号： G09G3/36 , G09G3/32 , G09G3/34 , G02F1/1335 , G02F1/1362
摘要： It is an object to provide a display device in which a problem of light leakage from a liquid crystal element in black display is reduced or overcome and the contrast is improved. It is another object to provide a pixel circuit having a function to control a lighting state of a backlight based on each pixel. These objects are achieved by turning off a light-emitting element in display of a black gray scale, and by providing a light-emitting element in each pixel and providing, in a pixel circuit, a function to individually control lighting and non-lighting of the light-emitting element depending on a gray scale to perform display. When a backlight is provided in each pixel, a light-emitting element that is a backlight is turned off when a black gray scale is displayed, whereby reduction in contrast due to light leakage from a liquid crystal element can be prevented.

8. 发明授权

US08823082B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08823082B2
公开(公告)日：2014-09-02
申请号：US13205671
申请日：2011-08-09
申请人： Makoto Yanagisawa
发明人： Makoto Yanagisawa
IPC分类号： H01L29/78 , H01L29/04
CPC分类号： H01L29/7869 , H01L29/42384 , H01L29/42392 , H01L29/78642
摘要： The present invention is a semiconductor device including a first electrode over a substrate; a pair of oxide semiconductor films in contact with the first electrode; a second electrode in contact with the pair of oxide semiconductor films; a gate insulating film covering at least the first electrode and the pair of oxide semiconductor films; and a third electrode that is in contact with the gate insulating film and is formed at least between the pair of oxide semiconductor films. When the donor density of the oxide semiconductor films is 1.0×1013/cm3 or less, the thickness of the oxide semiconductor films is made larger than the in-plane length of each side of the oxide semiconductor films which is in contact with the first electrode.
摘要翻译：本发明是一种半导体器件，其包括在衬底上的第一电极; 与所述第一电极接触的一对氧化物半导体膜; 与所述一对氧化物半导体膜接触的第二电极; 覆盖至少所述第一电极和所述一对氧化物半导体膜的栅极绝缘膜; 以及与所述栅极绝缘膜接触并且至少形成在所述一对氧化物半导体膜之间的第三电极。当氧化物半导体膜的供体密度为1.0×1013 / cm3以下时，使氧化物半导体膜的厚度大于与第一电极接触的氧化物半导体膜的各一侧的面内长度。

9. 发明授权

US08798875B2 Working machine 有权
标题翻译：工作机
公开(公告)号：US08798875B2
公开(公告)日：2014-08-05
申请号：US12937051
申请日：2009-04-10
申请人： Makoto Yanagisawa , Hideaki Kanbayashi
发明人： Makoto Yanagisawa , Hideaki Kanbayashi
IPC分类号： G06F7/70 , B60L9/00 , E02F3/04
CPC分类号： B60W20/13 , B60K1/02 , B60K6/20 , B60K6/365 , B60K6/46 , B60L1/003 , B60L1/02 , B60L1/20 , B60L3/003 , B60L3/0046 , B60L3/0061 , B60L7/14 , B60L11/005 , B60L11/123 , B60L11/1861 , B60L2200/40 , B60L2200/42 , B60L2210/12 , B60L2210/14 , B60L2210/40 , B60L2240/36 , B60L2240/441 , B60L2240/547 , B60L2250/12 , B60L2250/22 , B60L2250/24 , B60W10/08 , B60W10/26 , B60W20/00 , B60W2510/0638 , B60W2510/244 , B60Y2200/15 , B60Y2200/25 , B60Y2200/41 , B60Y2200/412 , B60Y2400/114 , B66C1/04 , B66C13/18 , B66F9/20 , E02F9/20 , H05K7/20927 , Y02T10/6217 , Y02T10/6278 , Y02T10/7005 , Y02T10/7022 , Y02T10/7044 , Y02T10/705 , Y02T10/7077 , Y02T10/7225 , Y02T10/7233 , Y02T10/7241
摘要： A working machine includes: a first electric motor used for work; a second electric motor used for applications other than work; a first inverter circuit connected to the first electric motor; a second inverter circuit connected to the second electric motor; a battery connected to the first and second inverter circuits; and a control unit that drives the first and second inverter circuits. The control unit has a discharge mode to discharge electric power stored in the battery, and discharges the battery by stopping the first inverter circuit while driving the second inverter circuit in order to make the second electric motor perform electric operation in the discharge mode. Accordingly, since the state of charge is reduced, the life of a capacitor can be increased.
摘要翻译：一种工作机器包括：用于工作的第一电动机; 用于工作以外的应用的第二电动机; 连接到第一电动机的第一逆变器电路; 连接到第二电动机的第二逆变器电路; 连接到第一和第二反相器电路的电池; 以及驱动第一和第二反相器电路的控制单元。控制单元具有放电模式以放电存储在电池中的电力，并且通过在驱动第二逆变器电路的同时停止第一逆变器电路来放电，以使第二电动机在放电模式下进行电动操作。因此，由于充电状态的降低，可以提高电容器的寿命。

10. 发明授权

US08431883B2 Photoelectric conversion device comprising a current mirror circuit connected to a field effect transistor, a buffer and a voltage detection circuit 有权
标题翻译：光电转换装置包括连接到场效应晶体管的电流镜电路，缓冲器和电压检测电路
公开(公告)号：US08431883B2
公开(公告)日：2013-04-30
申请号：US12141394
申请日：2008-06-18
申请人： Makoto Yanagisawa , Jun Koyama
发明人： Makoto Yanagisawa , Jun Koyama
IPC分类号： H01L31/00 , H03F3/08
CPC分类号： H01L31/1804 , G02F1/13318 , H01L27/1214 , H01L27/1225 , H01L27/1266 , H01L27/1277 , H01L31/075 , H01L31/202 , H03F3/082 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： It is an object to provide a photoelectric conversion device which can solve the problem of leakage current or noise caused when the photoelectric conversion device is connected to an external circuit by amplifying the current flows through the photoelectric conversion element, and which can widen dynamic range of the output voltage which is obtained in accordance with the current flowing through the photoelectric conversion element. The photoelectric conversion device includes a voltage detection circuit, and a photoelectric conversion circuit including a photoelectric conversion element, a current mirror circuit, and a field effect transistor. The current mirror circuit is a circuit which amplifies and outputs a photocurrent generated at the photoelectric conversion element. The voltage detection circuit is connected to the gate terminal of the field effect transistor so as to detect generated voltage.
摘要翻译：本发明的目的是提供一种光电转换装置，其可以通过放大通过光电转换元件的电流来解决当光电转换装置连接到外部电路时引起的漏电流或噪声的问题，并且可以扩大光电转换装置的动态范围根据流经光电转换元件的电流获得的输出电压。光电转换装置包括电压检测电路和包括光电转换元件，电流镜电路和场效应晶体管的光电转换电路。电流镜电路是放大并输出在光电转换元件产生的光电流的电路。电压检测电路连接到场效应晶体管的栅极端子，以检测产生的电压。

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