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1. 发明授权

US06917492B2 Magnetoresistive element and method for manufacturing the same and nonvolatile memory including the same 失效
标题翻译：磁阻元件及制造相同的非易失性存储器的方法
公开(公告)号：US06917492B2
公开(公告)日：2005-07-12
申请号：US10611224
申请日：2003-06-27
申请人： Nozomu Matsukawa , Masayoshi Hiramoto , Akihiro Odagawa , Yasunari Sugita , Mitsuo Satomi , Yoshio Kawashima
发明人： Nozomu Matsukawa , Masayoshi Hiramoto , Akihiro Odagawa , Yasunari Sugita , Mitsuo Satomi , Yoshio Kawashima
IPC分类号： G11B5/39 , H01F10/32 , H01F41/30 , H01L27/22 , H01L43/08 , H01L43/12 , G11B5/127
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G11B5/3909 , G11B2005/3996 , H01F10/3254 , H01F41/307 , H01L27/224 , H01L27/228 , H01L43/12 , Y10T29/49034
摘要： A magnetoresistive element includes a pair of ferromagnetic layers and a non-magnetic layer arranged between the ferromagnetic layers. At least one of the ferromagnetic layers has a composition expressed by (MxLy)100-zRz at the interface with the non-magnetic layer. The non-magnetic layer includes at least one element selected from the group consisting of B, C, N, O, and P. Here, M is FeaCobNic, L is at least one element selected from the group consisting of Pt, Pd, Ir, and Rh, R is an element that has a lower free energy to form a compound with the element of the non-magnetic layer that is at least one selected from the group consisting of B, C, N, O, and P than does any other element included in the composition as M or L, and a, b, c, x, y, and z satisfy a+b+c=100, a≧30, x+y=100, 0
摘要翻译：磁阻元件包括一对铁磁层和布置在铁磁层之间的非磁性层。铁磁层中的至少一个具有由（M×××××××××××××××××××××××××××composition composition z SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB >在与非磁性层的界面处。非磁性层包括选自B，C，N，O和P中的至少一种元素。这里，M是Fe L是选自Pt，Pd，Ir和Rh中的至少一种元素，R是具有较低自由能以与非金属元素形成化合物的元素，磁性层是选自B，C，N，O和P中的至少一种，除了组合物中包含的任何其它元素为M或L，以及a，b，c，x，y和 z满足a + b + c = 100，a> = 30，x + y = 100,0

2. 发明申请

US20050135020A1 Magnetoresistive element and magetoresistive magnetic head, magnetic recording apparatus and magnetoresistive memory device using the same 失效
标题翻译：磁阻元件和电阻磁头，磁记录装置和使用其的磁阻存储器件
公开(公告)号：US20050135020A1
公开(公告)日：2005-06-23
申请号：US11060028
申请日：2005-02-16
申请人： Yasunari Sugita , Masayoshi Hiramoto , Nozomu Matsukawa , Mitsuo Satomi , Yoshio Kawashima , Akihiro Odagawa
发明人： Yasunari Sugita , Masayoshi Hiramoto , Nozomu Matsukawa , Mitsuo Satomi , Yoshio Kawashima , Akihiro Odagawa
IPC分类号： G01R33/09 , G11B5/39 , H01F10/14 , H01F10/16 , H01F10/32 , H01L21/8246 , H01L27/105 , H01L43/08 , H01L43/10 , G11B5/33 , G11B5/127
CPC分类号： H01L43/10 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11B5/3916 , G11B2005/3996 , H01F10/3204 , H01F10/3231 , H01F10/3254 , H01F10/3268 , H01F10/3295 , Y10T428/115
摘要： The present invention provides a magnetoresistive (MR) element that is excellent in MR ratio and thermal stability and includes at least one magnetic layer including a ferromagnetic material M-X expressed by M100-aXa. Here, M is at least one selected from Fe, Co and Ni, X is expressed by X1bX2c,X3d (X1 is at least one selected from Cu, Ru, Rh, Pd, Ag, Os, Ir, Pt and Au, X2 is at least one selected from Al, Sc, Ti, V, Cr, Mn, Ga, Ge, Y, Zr, Nb, Mo, Hf, Ta, W, Re, Zn and lanthanide series elements, and X3 is at least one selected from Si, B, C, N, O, P and S), and a, b, c and d satisfy 0.05≦a≦60, 0≦b≦60, 0≦c≦30, 0≦d≦20, and a=b+c+d.
摘要翻译：本发明提供了一种磁阻（MR）元件，它具有优异的MR比和热稳定性，并且包括至少一个包括由M 100-a X表示的铁磁材料MX的磁性层， / SUB>。这里，M是选自Fe，Co和Ni中的至少一种，X由X 1表示，X 2， X 1，X 3是选自Cu，Ru，Rh，Pd，Ag，Os，Ir中的至少一种，Pt和Au，X 2是选自Al，Sc，Ti，V，Cr，Mn，Ga，Ge，Y，Zr，Nb，Mo，Hf，Ta，W中的至少一种， Re，Zn和镧系元素，X 3是选自Si，B，C，N，O，P和S中的至少一种），a，b，c和d满足0.05 < = a <= 60,0 <= b <= 60,0 <= c <= 30,0 <= d <= 20，a = b + c + d。

3. 发明授权

US06950333B2 Magnetic memory and method for driving the same, and magnetic memory device using the same 有权
标题翻译：磁存储器及其驱动方法及使用其的磁存储器件
公开(公告)号：US06950333B2
公开(公告)日：2005-09-27
申请号：US10695731
申请日：2003-10-24
申请人： Masayoshi Hiramoto , Nozomu Matsukawa , Akihiro Odagawa , Mitsuo Satomi , Yasunari Sugita , Yoshio Kawashima
发明人： Masayoshi Hiramoto , Nozomu Matsukawa , Akihiro Odagawa , Mitsuo Satomi , Yasunari Sugita , Yoshio Kawashima
IPC分类号： G11C11/00 , G11C11/15 , G11C11/16 , G11C11/22 , H01L21/8246 , H01L27/105 , H01L27/22
CPC分类号： H01L27/224 , B82Y10/00 , G11C11/15 , G11C11/16 , G11C11/5607 , H01L27/228
摘要： A magnetic memory of the present invention includes two or more memory layers and two or more tunnel layers that are stacked in the thickness direction of the layers. The two or more memory layers are connected electrically in series. A group of first layers includes at least one layer selected from the two or more memory layers. A group of second layers includes at least one layer selected from the two or more memory layers. A resistance change caused by magnetization reversal in the group of first layers differs from a resistance change caused by magnetization reversal in the group of second layers.
摘要翻译：本发明的磁存储器包括两层或多层存储层和两层或多层在层的厚度方向上层叠的隧道层。两个或更多个存储器层串联电连接。一组第一层包括从两个或更多个存储器层中选择的至少一个层。一组第二层包括从两个或更多个存储器层中选择的至少一个层。由第一层组中的磁化反转引起的电阻变化与由第二层组中的磁化反转引起的电阻变化不同。

4. 发明授权

US07079361B2 Magnetoresistive element and magnetoresistive magnetic head, magnetic recording apparatus and magnetoresistive memory device using the same 失效
标题翻译：磁阻元件和磁阻磁头，磁记录装置和使用其的磁阻存储器件
公开(公告)号：US07079361B2
公开(公告)日：2006-07-18
申请号：US11060028
申请日：2005-02-16
申请人： Yasunari Sugita , Masayoshi Hiramoto , Nozomu Matsukawa , Mitsuo Satomi , Yoshio Kawashima , Akihiro Odagawa
发明人： Yasunari Sugita , Masayoshi Hiramoto , Nozomu Matsukawa , Mitsuo Satomi , Yoshio Kawashima , Akihiro Odagawa
IPC分类号： G11B5/127
CPC分类号： H01L43/10 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11B5/3916 , G11B2005/3996 , H01F10/3204 , H01F10/3231 , H01F10/3254 , H01F10/3268 , H01F10/3295 , Y10T428/115
摘要： The present invention provides a magnetoresistive (MR) element that is excellent in MR ratio and thermal stability and includes at least one magnetic layer including a ferromagnetic material M-X expressed by M100-aXa. Here, M is at least one selected from Fe, Co and Ni, X is expressed by X1bX2cX3d (X1 is at least one selected from Cu, Ru, Rh, Pd, Ag, Os, Ir, Pt and Au, X2 is at least one selected from Al, Sc, Ti, V, Cr, Mn, Ga, Ge, Y, Zr, Nb, Mo, Hf, Ta, W, Re, Zn and lanthanide series elements, and X3 is at least one selected from Si, B, C, N, O, P and S), and a, b, c and d satisfy 0.05≦a≦60, 0≦b≦60, 0≦c≦30, 0≦d≦20, and a=b+c+d.
摘要翻译：本发明提供了一种磁阻（MR）元件，它具有优异的MR比和热稳定性，并且包括至少一个包括由M 100-a X表示的铁磁材料MX的磁性层， / SUB>。这里，M是选自Fe，Co和Ni中的至少一种，X由X 1表示，X 2，（X 1以上）选自Cu，Ru，Rh，Pd，Ag，Os，Ir中的至少一种， Pt和Au，X 2是选自Al，Sc，Ti，V，Cr，Mn，Ga，Ge，Y，Zr，Nb，Mo，Hf，Ta，W，Re中的至少一种，Zn和镧系元素，X 3是选自Si，B，C，N，O，P和S中的至少一种），a，b，c和d满足0.05 < a <= 60,0 <= b <= 60,0 <= c <= 30,0 <= d <= 20，a = b + c + d。

5. 发明授权

US06954372B2 Magnetic storage element, production method and driving method therefor, and memory array 失效
标题翻译：磁存储元件，其制造方法及其驱动方法以及存储器阵列
公开(公告)号：US06954372B2
公开(公告)日：2005-10-11
申请号：US10250811
申请日：2002-01-18
申请人： Nozomu Matsukawa , Masayoshi Hiramoto , Akihiro Odagawa , Mitsuo Satomi , Yasunari Sugita
发明人： Nozomu Matsukawa , Masayoshi Hiramoto , Akihiro Odagawa , Mitsuo Satomi , Yasunari Sugita
IPC分类号： G11C11/15 , G11C11/16 , H01F10/32 , H01L21/8246 , H01L27/22 , H01L29/66 , G11C11/00
CPC分类号： H01L27/228 , B82Y10/00 , B82Y25/00 , G11C11/15 , G11C11/16 , H01F10/32 , H01F10/3213 , H01F10/3254 , H01F10/3268 , H01L27/222 , H01L29/66984
摘要： A magnetic memory device that includes a magnetoresistive element, a conductive wire for generating magnetic flux that changes a resistance value of the magnetoresistive element, and at least one ferromagnetic member through which the magnetic flux passes. The ferromagnetic member forms a magnetic gap at a position where the magnetic flux passes through the magnetoresistive element. A length of the magnetoresistive element that is measured in a direction parallel to the magnetic gap is less than or equal to twice the length of the magnetic gap. A length of a path traced by the magnetic flux in the ferromagnetic member is less than or equal to 1.0 μm. The length of the path is also greater than or equal to five times the thickness of the ferromagnetic member and/or is greater than or equal to a length of the ferromagnetic member in the direction of the drawing of the conductive wire divided by five.
摘要翻译：一种磁存储器件，包括磁阻元件，用于产生改变磁阻元件的电阻值的磁通的导线以及磁通通过的至少一个铁磁部件。铁磁构件在磁通量通过磁阻元件的位置处形成磁隙。在与磁隙平行的方向上测量的磁阻元件的长度小于或等于磁隙长度的两倍。由铁磁部件中的磁通量追踪的路径的长度小于或等于1.0μm。路径的长度也大于或等于铁磁构件的厚度的五倍和/或大于或等于铁磁构件沿导线方向除以五的长度。

6. 发明授权

US06878979B2 Spin switch and magnetic storage element using it 失效
标题翻译：旋转开关和磁性存储元件使用它
公开(公告)号：US06878979B2
公开(公告)日：2005-04-12
申请号：US10258313
申请日：2002-01-18
申请人： Nozomu Matsukawa , Masayoshi Hiramoto , Akihiro Odagawa , Mitsuo Satomi , Yasunari Sugita
发明人： Nozomu Matsukawa , Masayoshi Hiramoto , Akihiro Odagawa , Mitsuo Satomi , Yasunari Sugita
IPC分类号： G11C11/15 , G11C11/16 , H01F10/32 , H01L21/8246 , H01L27/22 , H01L29/66 , H01L31/119
CPC分类号： H01L27/228 , B82Y10/00 , B82Y25/00 , G11C11/15 , G11C11/16 , H01F10/32 , H01F10/3213 , H01F10/3254 , H01F10/3268 , H01L27/222 , H01L29/66984
摘要： A spin switch that can be driven with voltage. This spin switch includes the following: a ferromagnetic material; a magnetic semiconductor magnetically coupled to the ferromagnetic material; an antiferromagnetic material magnetically coupled to the magnetic semiconductor; and an electrode connected to the magnetic semiconductor via an insulator. A change in the electric potential of the electrode causes the magnetic semiconductor to make a reversible transition between a ferromagnetic state and a paramagnetic state. When the magnetic semiconductor is changed to the ferromagnetic state, the ferromagnetic material is magnetized in a predetermined direction due to the magnetic coupling with the magnetic semiconductor.
摘要翻译：可以用电压驱动的自旋开关。该自旋开关包括：铁磁材料; 与铁磁材料磁耦合的磁半导体; 磁耦合到磁性半导体的反铁磁材料; 和通过绝缘体连接到磁性半导体的电极。电极的电位变化导致磁性半导体在铁磁性状态和顺磁性状态之间产生可逆的转变。当磁性半导体变为铁磁性状态时，铁磁材料由于与磁性半导体的磁耦合而在预定方向上被磁化。

7. 发明授权

US06861940B2 Magnetoresistive element 失效
标题翻译：磁阻元件
公开(公告)号：US06861940B2
公开(公告)日：2005-03-01
申请号：US10732053
申请日：2003-12-10
申请人： Nozomu Matsukawa , Akihiro Odagawa , Yasunari Sugita , Mitsuo Satomi , Yoshio Kawashima
发明人： Nozomu Matsukawa , Akihiro Odagawa , Yasunari Sugita , Mitsuo Satomi , Yoshio Kawashima
IPC分类号： G01R33/09 , H01F10/32 , H01C7/04
CPC分类号： H01L43/10 , B82Y25/00 , G01R33/093 , H01F10/324 , H01F10/3254 , H01F10/3268 , H01F10/3272
摘要： A magnetoresistive element of the present invention includes a multilayer structure that includes a non-magnetic layer (3) and a pair of ferromagnetic layers (1, 2) stacked on both sides of the non-magnetic layer (3). A resistance value differs depending on a relative angle between the magnetization directions of the ferromagnetic layers (1, 2) at the interfaces with the non-magnetic layer (3). The composition of at least one of the ferromagnetic layers (1, 2) in a range of 2 nm from the interface with the non-magnetic layer (3) is expressed by (MxOy)1-zZz, where Z is at least one element selected from the group consisting of Ru, Os, Rh, Ir, Pd, Pt, Cu, Ag, and Au, M is at least one element selected from the group consisting of elements other than Z and O and includes a ferromagnetic metal, and x, y, and z satisfy 0.33
摘要翻译：本发明的磁阻元件包括层叠在非磁性层（3）的两侧的非磁性层（3）和一对铁磁体层（1,2）的多层结构体。电阻值根据与非磁性层（3）的界面处的铁磁层（1,2）的磁化方向之间的相对角度而不同。从与非磁性层（3）的界面在2nm范围内的铁磁层（1,2）中的至少一个的组成由（M×Oy）1-zZz表示，其中Z是至少一个元素选自由Ru，Os，Rh，Ir，Pd，Pt，Cu，Ag和Au组成的组中的至少一种元素，M是选自Z和O以外的元素中的至少一种元素，并且包括铁磁性金属，以及 x，y和z满足0.33

8. 发明授权

US06798620B2 Magneto-resistive element, magnetic head, and magnetic recording and reproduction apparatus 失效
标题翻译：磁电元件，磁头和磁记录和再现装置
公开(公告)号：US06798620B2
公开(公告)日：2004-09-28
申请号：US10441794
申请日：2003-05-20
申请人： Masayoshi Hiramoto , Nozomu Matsukawa , Akihiro Odagawa , Hideaki Adachi , Kenji Iijima , Hiroshi Sakakima , Yasunari Sugita
发明人： Masayoshi Hiramoto , Nozomu Matsukawa , Akihiro Odagawa , Hideaki Adachi , Kenji Iijima , Hiroshi Sakakima , Yasunari Sugita
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3909 , G11B5/3916 , G11B2005/3996 , H01F10/324 , H01F10/3268 , H01F10/3272 , H01F10/3295
摘要： A magnetic head including a magnetic substrate for operating as a first electrode, a multi-layer film formed on a portion of the surface of the magnetic substrate an inter-layer insulating layer provided to cover side surfaces of the multi-layer film, a flux guide formed on surfaces of the multi-layer film and inter-layer insulating layers, a non-magnetic conductive layer formed on a surface of the flux guide, and a second electrode formed on a surface of the non-magnetic conductive layer, in which the multi-layer film includes a first magnetic layer formed on a portion of the surface of the magnetic substrate and includes a fixed layer, and a second magnetic layer including a non-magnetic layer formed on a surface of the first magnetic layer and a free layer formed on a surface of the non-magnetic layer.
摘要翻译：一种磁头，包括用作第一电极的磁性基板，在该磁性基板的一部分表面上形成的层间绝缘层，覆盖多层膜的侧表面的多层膜，形成在多层膜和层间绝缘层的表面上的引导件，形成在引导件的表面上的非磁性导电层和形成在非磁性导电层的表面上的第二电极，其中多层膜包括形成在磁性基板的表面的一部分上并包括固定层的第一磁性层和包括形成在第一磁性层的表面上的非磁性层的第二磁性层，层形成在非磁性层的表面上。

9. 发明授权

US06567246B1 Magnetoresistance effect element and method for producing the same, and magnetoresistance effect type head, magnetic recording apparatus, and magnetoresistance effect memory element 失效
标题翻译：磁阻效应元件及其制造方法，磁阻效应型磁头，磁记录装置和磁阻效应存储元件
公开(公告)号：US06567246B1
公开(公告)日：2003-05-20
申请号：US09516552
申请日：2000-03-01
申请人： Hiroshi Sakakima , Yasunari Sugita , Mitsuo Satomi , Yasuhiro Kawawake , Masayoshi Hiramoto , Nozomu Matsukawa
发明人： Hiroshi Sakakima , Yasunari Sugita , Mitsuo Satomi , Yasuhiro Kawawake , Masayoshi Hiramoto , Nozomu Matsukawa
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G11B5/00 , G11B5/012 , G11B5/3903 , G11B5/3925 , G11B2005/3996 , H01F10/3268 , H01F41/18 , H01F41/302 , H01L43/08
摘要： A magnetoresistance effect element includes a free layer, in which a magnetization direction thereof is easily rotated in response to an external magnetic field, a first non-magnetic layer, and a first pinned layer provided on a side opposite to the free layer of the first non-magnetic layer, in which a magnetization direction of the first pinned layer is not easily rotated in response to the external magnetic field. At least one of the first pinned layer and the free layer includes a first metal magnetic film contacting the first non-magnetic layer, and a first oxide magnetic film.
摘要翻译：磁阻效应元件包括自由层，其中其磁化方向响应于外部磁场容易旋转，第一非磁性层和设置在与第一非磁性层的自由层相对的一侧上的第一被钉扎层非磁性层，其中第一被钉扎层的磁化方向响应于外部磁场而不容易旋转。第一被钉扎层和自由层中的至少一个包括与第一非磁性层接触的第一金属磁性膜和第一氧化物磁性膜。

10. 发明授权

US06943041B2 Magnetoresistive element and method for producing the same, as well as magnetic head, magnetic memory and magnetic recording device using the same 失效
标题翻译：磁阻元件及其制造方法以及使用该磁阻元件的磁头，磁存储器和磁记录装置
公开(公告)号：US06943041B2
公开(公告)日：2005-09-13
申请号：US10719412
申请日：2003-11-21
申请人： Yasunari Sugita , Akihiro Odagawa , Nozomu Matsukawa , Yoshio Kawashima , Yasunori Morinaga
发明人： Yasunari Sugita , Akihiro Odagawa , Nozomu Matsukawa , Yoshio Kawashima , Yasunori Morinaga
IPC分类号： G01R33/09 , G11B5/39 , G11C11/16 , H01F10/32 , H01F41/30 , H01L27/22 , H01L43/08 , H01L43/12 , H01L21/00
CPC分类号： H01L27/228 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11B5/3916 , G11B2005/3996 , G11C11/16 , H01F10/3254 , H01F10/3268 , H01F41/302 , H01L43/08 , H01L43/12
摘要： The present invention provides a method for producing a magnetoresistive element including a tunnel insulating layer, and a first magnetic layer and a second magnetic layer that are laminated so as to sandwich the tunnel insulating layer, wherein a resistance value varies depending on a relative angle between magnetization directions of the first magnetic layer and the second magnetic layer. The method includes the steps of: (i) laminating a first magnetic layer, a third magnetic layer and an Al layer successively on a substrate; (ii) forming a tunnel insulating layer containing at least one compound selected from the group consisting of an oxide, nitride and oxynitride of Al by performing at least one reaction selected from the group consisting of oxidation, nitriding and oxynitriding of the Al layer; and (iii) forming a laminate including the first magnetic layer, the tunnel insulating layer and a second magnetic layer by laminating the second magnetic layer in such a manner that the tunnel insulating layer is sandwiched by the first magnetic layer and the second magnetic layer. The third magnetic layer has at least one crystal structure selected from the group consisting of a face-centered cubic crystal structure and a face-centered tetragonal crystal structure and is (111) oriented parallel to a film plane of the third magnetic layer. According to this production method, it is possible to produce a magnetoresistive element with excellent properties and thermal stability.
摘要翻译：本发明提供了一种制造磁阻元件的方法，该磁阻元件包括隧道绝缘层，以及第一磁性层和第二磁性层，其被层压以夹住隧道绝缘层，其中电阻值根据相对角度而变化第一磁性层和第二磁性层的磁化方向。该方法包括以下步骤：（i）在衬底上依次层叠第一磁性层，第三磁性层和Al层; （ii）通过进行选自Al层的氧化，氮化和氮氧化的至少一种反应，形成包含至少一种选自Al的氧化物，氮化物和氮氧化物的化合物的隧道绝缘层; 以及（iii）通过层叠所述第二磁性层来形成包括所述第一磁性层，所述隧道绝缘层和第二磁性层的层压体，使得所述隧道绝缘层被所述第一磁性层和所述第二磁性层夹在中间。第三磁性层具有至少一种选自面心立方晶体结构和面心四边形晶体结构的晶体结构，并且（111）取向为平行于第三磁性层的膜平面。根据该制造方法，可以制造出具有优异性能和热稳定性的磁阻元件。

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