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1. 发明申请

US20050167699A1 Variable resistance element, method of manufacturing the element, memory containing the element, and method of driving the memory 有权
标题翻译：可变电阻元件，元件的制造方法，包含元件的存储器以及驱动存储器的方法
公开(公告)号：US20050167699A1
公开(公告)日：2005-08-04
申请号：US11061920
申请日：2005-02-22
申请人： Yasunari Sugita , Akihiro Odagawa , Hideaki Adachi , Satoshi Yotsuhashi , Tsutomu Kanno , Kiyoshi Ohnaka
发明人： Yasunari Sugita , Akihiro Odagawa , Hideaki Adachi , Satoshi Yotsuhashi , Tsutomu Kanno , Kiyoshi Ohnaka
IPC分类号： G11C11/56 , G11C13/00 , H01L21/02 , H01L27/24 , H01L45/00
CPC分类号： G11C13/0007 , G11C11/5685 , G11C2213/31 , H01L27/2409 , H01L27/2436 , H01L45/04 , H01L45/1233 , H01L45/1246 , H01L45/1273 , H01L45/147 , H01L45/1675
摘要： The present invention lowers a drive voltage of a RRAM, which is a promising low power consumption, high-speed memory and suppresses variations in the width of an electric pulse for realizing a same resistance change. The present invention provides a variable resistance element including: a first electrode; a layer in which its resistance is variable by applying an electric pulse thereto, the layer being formed on the first electrode; and a second electrode formed on the layer; wherein the layer has a perovskite structure; and the layer has at least one selected from depressions and protrusions in an interface with at least one electrode selected from the first electrode and the second electrode.
摘要翻译：本发明降低了作为有希望的低功耗高速存储器的RRAM的驱动电压，并且抑制了用于实现相同电阻变化的电脉冲宽度的变化。本发明提供一种可变电阻元件，包括：第一电极; 通过施加电脉冲使其电阻可变的层，所述层形成在第一电极上; 和形成在该层上的第二电极; 其中所述层具有钙钛矿结构; 并且所述层具有从与所述第一电极和所述第二电极中选择的至少一个电极的界面中的凹陷和突起中选择的至少一个。

2. 发明授权

US07167387B2 Variable resistance element, method of manufacturing the element, memory containing the element, and method of driving the memory 有权
标题翻译：可变电阻元件，元件的制造方法，包含元件的存储器以及驱动存储器的方法
公开(公告)号：US07167387B2
公开(公告)日：2007-01-23
申请号：US11061920
申请日：2005-02-22
申请人： Yasunari Sugita , Akihiro Odagawa , Hideaki Adachi , Satoshi Yotsuhashi , Tsutomu Kanno , Kiyoshi Ohnaka
发明人： Yasunari Sugita , Akihiro Odagawa , Hideaki Adachi , Satoshi Yotsuhashi , Tsutomu Kanno , Kiyoshi Ohnaka
IPC分类号： G11C11/00
CPC分类号： G11C13/0007 , G11C11/5685 , G11C2213/31 , H01L27/2409 , H01L27/2436 , H01L45/04 , H01L45/1233 , H01L45/1246 , H01L45/1273 , H01L45/147 , H01L45/1675
摘要： The present invention lowers a drive voltage of a RRAM, which is a promising low power consumption, high-speed memory and suppresses variations in the width of an electric pulse for realizing a same resistance change. The present invention provides a variable resistance element including: a first electrode; a layer in which its resistance is variable by applying an electric pulse thereto, the layer being formed on the first electrode; and a second electrode formed on the layer; wherein the layer has a perovskite structure; and the layer has at least one selected from depressions and protrusions in an interface with at least one electrode selected from the first electrode and the second electrode.
摘要翻译：本发明降低了作为有希望的低功耗高速存储器的RRAM的驱动电压，并且抑制了用于实现相同电阻变化的电脉冲宽度的变化。本发明提供一种可变电阻元件，包括：第一电极; 通过施加电脉冲使其电阻可变的层，所述层形成在第一电极上; 和形成在该层上的第二电极; 其中所述层具有钙钛矿结构; 并且所述层具有从与所述第一电极和所述第二电极中选择的至少一个电极的界面中的凹陷和突起中选择的至少一个。

3. 发明授权

US07049198B2 Semiconductor device and method for fabricating the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07049198B2
公开(公告)日：2006-05-23
申请号：US10377771
申请日：2003-03-04
申请人： Koichiro Yuki , Tohru Saitoh , Minoru Kubo , Kiyoshi Ohnaka , Akira Asai , Koji Katayama
发明人： Koichiro Yuki , Tohru Saitoh , Minoru Kubo , Kiyoshi Ohnaka , Akira Asai , Koji Katayama
IPC分类号： H01L21/00
CPC分类号： H01L21/26506 , H01L21/2658 , H01L29/1054 , H01L29/165 , H01L29/167
摘要： An S1-yGey layer (where 0
摘要翻译：按照此顺序形成S 1〜Y Ge层（其中0

4. 发明授权

US06777253B2 Method for fabricating semiconductor, method for fabricating semiconductor substrate, and semiconductor light emitting device 有权
标题翻译：半导体制造方法，半导体衬底的制造方法以及半导体发光器件
公开(公告)号：US06777253B2
公开(公告)日：2004-08-17
申请号：US10017389
申请日：2001-12-18
申请人： Akihiko Ishibashi , Ayumu Tsujimura , Yasutoshi Kawaguchi , Nobuyuki Otsuka , Kiyoshi Ohnaka
发明人： Akihiko Ishibashi , Ayumu Tsujimura , Yasutoshi Kawaguchi , Nobuyuki Otsuka , Kiyoshi Ohnaka
IPC分类号： H01L2100
CPC分类号： H01L33/32 , B82Y20/00 , H01L21/02378 , H01L21/02381 , H01L21/02389 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L33/007 , H01L33/0075 , H01S5/021 , H01S5/0211 , H01S5/34333
摘要： The method for fabricating a semiconductor includes the steps of: (1) growing a first semiconductor layer made of AlxGa1−xN (0≦x≦1) on a substrate at a temperature higher than room temperature; and (2) growing a second semiconductor layer made of AluGavInwN (0
摘要翻译：制造半导体的方法包括以下步骤：（1）在高于室温的温度下，在衬底上生长由Al x Ga 1-x N（0 <= x <= 1）制成的第一半导体层; 和（2）在第一半导体层上生长由AluGavInwN（0

5. 发明授权

US06326638B1 Semiconductor light emitting element and method for fabricating the same 失效
标题翻译：半导体发光元件及其制造方法
公开(公告)号：US06326638B1
公开(公告)日：2001-12-04
申请号：US09080121
申请日：1998-05-15
申请人： Satoshi Kamiyama , Masakatsu Suzuki , Takeshi Uenoyama , Kiyoshi Ohnaka , Akira Takamori , Masaya Mannoh , Isao Kidoguchi , Hideto Adachi , Akihiko Ishibashi , Toshiya Fukuhisa , Yasuhito Kumabuchi
发明人： Satoshi Kamiyama , Masakatsu Suzuki , Takeshi Uenoyama , Kiyoshi Ohnaka , Akira Takamori , Masaya Mannoh , Isao Kidoguchi , Hideto Adachi , Akihiko Ishibashi , Toshiya Fukuhisa , Yasuhito Kumabuchi
IPC分类号： H01L2715
CPC分类号： B82Y20/00 , H01L33/16 , H01L33/32 , H01S5/0207 , H01S5/0213 , H01S5/02272 , H01S5/2068 , H01S5/2201 , H01S5/2232 , H01S5/2237 , H01S5/24 , H01S5/3201 , H01S5/3202 , H01S5/3203 , H01S5/32308 , H01S5/32341 , H01S5/3403 , H01S5/34333 , H01S2301/173 , H01S2304/04 , H01S2304/12 , Y10S257/918 , Y10T428/12528
摘要： The semiconductor laser of this invention includes an active layer formed in a c-axis direction, wherein the active layer is made of a hexagonal-system compound semiconductor, and anisotropic strain is generated in a c plane of the active layer.
摘要翻译：本发明的半导体激光器包括在c轴方向上形成的有源层，其中有源层由六方晶系化合物半导体制成，并且在有源层的c平面内产生各向异性应变。

6. 发明授权

US6136626A Semiconductor light-emitting device and production method thereof 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US6136626A
公开(公告)日：2000-10-24
申请号：US243777
申请日：1999-02-03
申请人： Isao Kidoguchi , Hideto Adachi , Akihiko Ishibashi , Kiyoshi Ohnaka , Yuzaburo Ban , Minoru Kubo
发明人： Isao Kidoguchi , Hideto Adachi , Akihiko Ishibashi , Kiyoshi Ohnaka , Yuzaburo Ban , Minoru Kubo
IPC分类号： H01L33/00 , H01L33/02 , H01L33/32 , H01L33/64 , H01S5/042 , H01S5/20 , H01S5/30 , H01S5/323 , H01S5/327 , H01L21/20
CPC分类号： H01L33/025 , H01L33/007 , H01L33/32 , H01L33/325 , H01S5/305 , H01S5/32341 , H01L33/64 , H01S5/0422 , H01S5/2059 , H01S5/3063 , H01S5/327
摘要： A semiconductor light-emitting device with a double hetero structure, including: an active layer made of Ga.sub.1-x In.sub.x N (0.ltoreq.x.ltoreq.0.3) doped with a p-type impurity and an n-type impurity; and first and second cladding layers provided so as to sandwich the active layer.
摘要翻译：一种具有双异质结构的半导体发光器件，包括：由掺杂有p型杂质和n型杂质的Ga1-xInxN（0≤x≤0.3）制成的有源层; 以及设置成夹持有源层的第一和第二覆层。

7. 发明授权

US5895225A Semiconductor light-emitting device and production method thereof 失效
公开(公告)号：US5895225A
公开(公告)日：1999-04-20
申请号：US978848
申请日：1997-11-26
申请人： Isao Kidoguchi , Hideto Adachi , Akihiko Ishibashi , Kiyoshi Ohnaka , Yuzaburo Ban , Minoru Kubo
发明人： Isao Kidoguchi , Hideto Adachi , Akihiko Ishibashi , Kiyoshi Ohnaka , Yuzaburo Ban , Minoru Kubo
IPC分类号： H01L33/00 , H01L33/02 , H01L33/06 , H01L33/32 , H01L33/36 , H01L33/64 , H01S5/02 , H01S5/022 , H01S5/024 , H01S5/042 , H01S5/16 , H01S5/20 , H01S5/223 , H01S5/30 , H01S5/323 , H01S5/327 , H01S3/02
CPC分类号： H01L33/642 , H01L24/14 , H01L24/16 , H01L24/17 , H01L24/81 , H01L33/007 , H01L33/025 , H01L33/32 , H01L33/325 , H01S5/2231 , H01S5/305 , H01S5/32341 , H01S5/327 , H01L2224/73204 , H01L2224/83192 , H01L2933/0075 , H01S5/0213 , H01S5/02236 , H01S5/0224 , H01S5/02272 , H01S5/0422 , H01S5/162 , H01S5/2059 , H01S5/2063 , H01S5/3063 , H01S5/3086
摘要： A semiconductor light-emitting device with a double hetero structure, including: an active layer made of Ga.sub.1-x In.sub.x N (0.ltoreq.x.ltoreq.0.3) doped with a p-type impurity and an n-type impurity; and first and second cladding layers provided so as to sandwich the active layer.

8. 发明授权

US5143863A Method of manufacturing semiconductor laser 失效
标题翻译：制造半导体激光器的方法
公开(公告)号：US5143863A
公开(公告)日：1992-09-01
申请号：US683181
申请日：1991-04-09
申请人： Kiyoshi Ohnaka , Mototsugu Ogura
发明人： Kiyoshi Ohnaka , Mototsugu Ogura
IPC分类号： H01S5/22 , H01S5/223 , H01S5/227 , H01S5/323
CPC分类号： H01S5/227 , H01S5/2231 , H01S5/2205 , H01S5/2209 , H01S5/221 , H01S5/2211 , H01S5/2214 , H01S5/2216 , H01S5/2275 , H01S5/32325
摘要： According to the structure of the invention, an AlGaInP cladding layer of one conductive type, an active layer, and an AlGaInP cladding layer of other conductive type greater in thickness in stripes are formed on a GaAs substrate, and an insulating film, AlGaInP or amorphous layer smaller in refractive index than the AlGaInP cladding layer are formed at both sides of the stripes, wherein the light can be confined and guided also in the direction parallel to the active layer, and the light can be index-guided both in the direction parallel to the active layer and in the direction vertical thereto, so that a laser having an extremely smaller astigmatism may be presented. What is more, the current blocking layer disposed at the outer side of the insulating film, AlGaInP or amorphous layer is high in thermal conductivity, and the heat generated in the vicinity of the active layer may be efficiently released.The invention also relates to the method of fabricating the laser composed in such structure.
摘要翻译：根据本发明的结构，在GaAs衬底上形成厚度较大的一种导电类型，有源层和其它导电类型的AlGaInP包层的AlGaInP包层，并且将绝缘膜AlGaInP或非晶在条纹的两侧形成折射率比AlGaInP包覆层小的层，其中光可以在与有源层平行的方向上被限制和引导，并且光可以沿着平行的方向被引导引导到有源层和垂直于其的方向，使得可以呈现具有非常小的散光的激光。此外，设置在绝缘膜的外侧的电流阻挡层AlGaInP或非晶层的导热性高，并且可以有效地释放在活性层附近产生的热量。本发明还涉及以这种结构构成的激光器的制造方法。

9. 发明授权

US07470608B2 Semiconductor light emitting device and fabrication method thereof 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US07470608B2
公开(公告)日：2008-12-30
申请号：US11359480
申请日：2006-02-23
申请人： Akihiko Ishibashi , Toshiya Yokogawa , Kiyoshi Ohnaka , Susumu Koike
发明人： Akihiko Ishibashi , Toshiya Yokogawa , Kiyoshi Ohnaka , Susumu Koike
IPC分类号： H01L21/44
CPC分类号： H01L33/32 , H01L21/0242 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/0265 , H01L33/007 , H01L33/10 , H01L33/46 , H01L2224/48463 , H01L2224/49107
摘要： The present invention relates to a semiconductor light emitting device comprising a sapphire substrate 11; a u-GaN layer 12 that is formed on top of the substrate 11 and that comprises a plurality of concave portions 121 formed into band-like shapes with predetermined intervals therebetween; a regrown u-GaN layer 13 formed on the u-Ga layer 12; a layered structure that is formed on the u-GaN layer 13 comprises an n-GaN layer 15, an active layer 16, and a p-GaN layer 19; an n-type electrode 24 formed on the n-GaN layer 15 exposed by removing a potion of the layered structure; and a transparent p-type electrode 20 formed on the p-GaN layer 19, wherein the p-type electrode 20 is an emission detection surface, and an air layer S is formed between the bottom surface of the u-GaN layer 13 and the concave portions 121.
摘要翻译：本发明涉及一种包括蓝宝石衬底11的半导体发光器件; 形成在基板11的顶部并且包括多个形成为具有预定间隔的带状形状的凹部121的u-GaN层12; 形成在u-Ga层12上的再生U-GaN层13; 形成在u-GaN层13上的分层结构包括n-GaN层15，有源层16和p-GaN层19; 形成在n-GaN层15上的n型电极24通过去除层状结构的一部分而暴露; 以及形成在p-GaN层19上的透明p型电极20，其中p型电极20是发射检测表面，并且在u-GaN层13的底表面和凹部121。

10. 发明授权

US07030417B2 Semiconductor light emitting device and fabrication method thereof 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US07030417B2
公开(公告)日：2006-04-18
申请号：US10633040
申请日：2003-08-04
申请人： Akihiko Ishibashi , Toshiya Yokogawa , Kiyoshi Ohnaka , Susumu Koike
发明人： Akihiko Ishibashi , Toshiya Yokogawa , Kiyoshi Ohnaka , Susumu Koike
IPC分类号： H01L21/00
CPC分类号： H01L33/32 , H01L21/0242 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/0265 , H01L33/007 , H01L33/10 , H01L33/46 , H01L2224/48463 , H01L2224/49107
摘要： The present invention relates to a semiconductor light emitting device comprising a sapphire substrate 11; a u-GaN layer 12 that is formed on top of the substrate 11 and that comprises a plurality of concave portions 121 formed into band-like shapes with predetermined intervals therebetween; a regrown u-GaN layer 13 formed on the u-Ga layer 12; a layered structure that is formed on the u-GaN layer 13 comprises an n-GaN layer 15, an active layer 16, and a p-GaN layer 19; an n-type electrode 24 formed on the n-GaN layer 15 exposed by removing a potion of the layered structure; and a transparent p-type electrode 20 formed on the p-GaN layer 19, wherein the p-type electrode 20 is an emission detection surface, and an air layer S is formed between the bottom surface of the u-GaN layer 13 and the concave portions 121.
摘要翻译：本发明涉及一种包括蓝宝石衬底11的半导体发光器件; 形成在基板11的顶部并且包括多个形成为具有预定间隔的带状形状的凹部121的u-GaN层12; 形成在u-Ga层12上的再生U-GaN层13; 形成在u-GaN层13上的分层结构包括n-GaN层15，有源层16和p-GaN层19; 形成在n-GaN层15上的n型电极24通过去除层状结构的一部分而暴露; 以及形成在p-GaN层19上的透明p型电极20，其中p型电极20是发射检测表面，并且在u-GaN层13的底表面和凹部121。

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