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1. 发明授权

US08231726B2 Semiconductor light emitting element, group III nitride semiconductor substrate and method for manufacturing such group III nitride semiconductor substrate 有权
标题翻译：半导体发光元件，III族氮化物半导体衬底及其制造方法
公开(公告)号：US08231726B2
公开(公告)日：2012-07-31
申请号：US12161393
申请日：2007-01-19
申请人： Hisashi Minemoto , Yasuo Kitaoka , Yasutoshi Kawaguchi , Yasuhito Takahashi , Yoshiaki Hasegawa
发明人： Hisashi Minemoto , Yasuo Kitaoka , Yasutoshi Kawaguchi , Yasuhito Takahashi , Yoshiaki Hasegawa
IPC分类号： H01L33/30 , C30B19/02 , C30B19/04
CPC分类号： H01S5/32341 , C30B19/02 , C30B29/403 , C30B29/406 , H01L33/0075 , H01L33/025 , H01L33/32 , H01S5/0206 , H01S5/22 , H01S5/305
摘要： An object of the present invention is to obtain, with respect to a semiconductor light-emitting element using a group III nitride semiconductor substrate, a semiconductor light-emitting element having an excellent light extraction property by selecting a specific substrate dopant and controlling the concentration thereof. The semiconductor light-emitting element comprises a substrate composed of a group III nitride semiconductor comprising germanium (Ge) as a dopant, an n-type semiconductor layer composed of a group III nitride semiconductor formed on the substrate, an active layer composed of a group III nitride semiconductor formed on the n-type semiconductor layer, and a p-type semiconductor layer composed of a group III nitride semiconductor formed on the active layer in which the substrate has a germanium (Ge) concentration of 2×1017 to 2×1019 cm−3. The substrate is produced in a nitrogen-containing atmosphere using a melt comprising at least a group III element, an alkali or alkaline earth metal, and germanium (Ge) and nitrogen.
摘要翻译：本发明的目的是为了获得使用III族氮化物半导体衬底的半导体发光元件，通过选择特定的衬底掺杂剂并控制其浓度来获得具有优异的光提取性能的半导体发光元件。半导体发光元件包括由包含锗（Ge）作为掺杂剂的III族氮化物半导体构成的衬底，由形成在衬底上的III族氮化物半导体构成的n型半导体层，由组形成在n型半导体层上的III族氮化物半导体以及形成在有源层上形成的III族氮化物半导体的p型半导体层，其中基板的锗（Ge）浓度为2×1017〜2×1019 cm-3。使用包含至少III族元素，碱金属或碱土金属和锗（Ge）和氮的熔体在含氮气氛中生产基材。

2. 发明申请

US20100118905A1 NITRIDE SEMICONDUCTOR LASER DIODE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：氮化物半导体激光二极管及其制造方法
公开(公告)号：US20100118905A1
公开(公告)日：2010-05-13
申请号：US12547906
申请日：2009-08-26
申请人： Tomohito YABUSHITA , Yasutoshi Kawaguchi , Akio Ueta , Akihiko Ishibashi
发明人： Tomohito YABUSHITA , Yasutoshi Kawaguchi , Akio Ueta , Akihiko Ishibashi
IPC分类号： H01S5/00 , H01L33/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/2201 , H01S5/3213 , H01S2301/18 , H01S2304/04
摘要： A nitride semiconductor laser diode includes a substrate of n-type GaN, and a multilayer structure including an n-type cladding layer of AlxGa1-x N (where 0
摘要翻译：氮化物半导体激光二极管包括n型GaN的衬底和包括形成在衬底的主表面上并与衬底的主表面接触的Al x Ga 1-x N（其中0

3. 发明授权

US07005680B2 Semiconductor light-emitting device including a divided electrode having a plurality of spaced apart conductive members 失效
标题翻译：半导体发光器件包括具有多个间隔开的导电部件的分割电极
公开(公告)号：US07005680B2
公开(公告)日：2006-02-28
申请号：US10681443
申请日：2003-10-07
申请人： Nobuyuki Otsuka , Yoshiaki Hasegawa , Gaku Sugahara , Yasutoshi Kawaguchi
发明人： Nobuyuki Otsuka , Yoshiaki Hasegawa , Gaku Sugahara , Yasutoshi Kawaguchi
IPC分类号： H01L33/00
CPC分类号： H01S5/0425 , H01L27/15 , H01S5/0422 , H01S5/0625 , H01S5/0658
摘要： The semiconductor light-emitting device of the present invention includes a first semiconductor layer of a first conductivity type formed substantially in a uniform thickness on a substrate and a second semiconductor layer of a second conductivity type formed substantially in a uniform thickness on the first semiconductor layer. The device further includes an active layer, formed substantially in a uniform thickness between the first semiconductor layer and the second semiconductor layer, for generating emission light. The device also comprises a first electrode for supplying a drive current to the first semiconductor layer and a second electrode for supplying a drive current to the second semiconductor layer. The device is adapted that the first or second electrode is a divided electrode comprising a plurality of conductive members spaced apart from each other.
摘要翻译：本发明的半导体发光器件包括在基板上基本上形成为均匀厚度的第一导电类型的第一半导体层和在第一半导体层上形成为基本上均匀厚度的第二导电类型的第二半导体层。该器件还包括在第一半导体层和第二半导体层之间基本上以均匀厚度形成的有源层，用于产生发射光。该器件还包括用于向第一半导体层提供驱动电流的第一电极和用于向第二半导体层提供驱动电流的第二电极。该装置适于使第一或第二电极是包括彼此间隔开的多个导电构件的分割电极。

4. 发明申请

US20110182310A1 NITRIDE SEMICONDUCTOR LASER DIODE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：氮化物半导体激光二极管及其制造方法
公开(公告)号：US20110182310A1
公开(公告)日：2011-07-28
申请号：US13080138
申请日：2011-04-05
申请人： Tomohito Yabushita , Yasutoshi Kawaguchi , Akio Ueta , Akihiko Ishibashi
发明人： Tomohito Yabushita , Yasutoshi Kawaguchi , Akio Ueta , Akihiko Ishibashi
IPC分类号： H01S5/323 , H01L21/20 , B82Y20/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/2201 , H01S5/3213 , H01S2301/18 , H01S2304/04
摘要： A nitride semiconductor laser diode includes a substrate of n-type GaN, and a multilayer structure including an n-type cladding layer of AlxGa1-xN (where 0
摘要翻译：氮化物半导体激光二极管包括n型GaN的衬底和包括形成在衬底的主表面上并与衬底的主表面接触的Al x Ga 1-x N（其中0

5. 发明授权

US07846820B2 Nitride semiconductor device and process for producing the same 有权
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：US07846820B2
公开(公告)日：2010-12-07
申请号：US11568336
申请日：2005-04-20
申请人： Akihiko Ishibashi , Toshiya Yokogawa , Toshitaka Shimamoto , Yoshiaki Hasegawa , Yasutoshi Kawaguchi , Isao Kidoguchi
发明人： Akihiko Ishibashi , Toshiya Yokogawa , Toshitaka Shimamoto , Yoshiaki Hasegawa , Yasutoshi Kawaguchi , Isao Kidoguchi
IPC分类号： H01L21/36
CPC分类号： H01S5/34333 , B82Y20/00 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/02636 , H01L21/02639 , H01L21/02642 , H01L21/0265 , H01L33/0075 , H01S5/2201 , H01S5/305 , H01S5/3216 , H01S2301/173 , H01S2304/04 , H01S2304/12
摘要： A process for producing a nitride semiconductor according to the present invention includes: step (A) of provided an n-GaN substrate 101; step (B) of forming on the substrate 101 a plurality of stripe ridges having upper faces which are parallel to a principal face of the substrate 101; step (C) of selectively growing AlxGayInzN crystals (0≦x, y, z≦1: x+y+z=1) 104 on the upper faces of the plurality of stripe ridges, the AlxGayInzN crystals containing an n-type impurity at a first concentration; and step (D) of growing an Alx′Gay′Inz′N crystal (0≦x′, y′, z′≦1:x′+y′+z′=1) 106 on the AlxGayInzN crystals 104, the Alx′Gay′Inz′N crystal 106 containing an n-type impurity at a second concentration which is lower than the first concentration, and linking every two adjoining AlxGayInzN crystals 104 with the Alx′Gay′Inz′N crystal 106 to form one nitride semiconductor layer 120.
摘要翻译：根据本发明的制造氮化物半导体的方法包括：提供n-GaN衬底101的步骤（A）; 在基板101上形成具有平行于基板101的主面的上表面的多个条纹脊的步骤（B）; 在多个条纹脊的上表面上选择性地生长Al x Ga y In z N晶体（0＆nlE; x，y，z＆nlE; 1：x + y + z = 1）104的步骤（C），含有n型杂质的Al x Ga y In z N晶体第一集中; 以及在Al x Ga y In z N晶体104上生长Al x Ga Ga y In z N晶体（0＆amp; nlE; x'，y'，z'＆nlE; 1：x'+ y'+ z'= 1）106的步骤（D） Alx'Gay'Inz'N晶体106，其含有低于第一浓度的第二浓度的n型杂质，并且将每两个相邻的Al x Ga y In z N晶体104与Al x Ga y In z N晶体106连接以形成一个氮化物半导体层120。

6. 发明申请

US20080049806A1 NITRIDE SEMICONDUCTOR LASER AND METHOD FOR FABRICATING THE SAME 失效
标题翻译：氮化物半导体激光器及其制造方法
公开(公告)号：US20080049806A1
公开(公告)日：2008-02-28
申请号：US11872071
申请日：2007-10-15
申请人： Gaku SUGAHARA , Yasutoshi KAWAGUCHI , Akihiko ISHIBASHI , Isao KIDOGUCHI , Toshiya YOKOGAWA
发明人： Gaku SUGAHARA , Yasutoshi KAWAGUCHI , Akihiko ISHIBASHI , Isao KIDOGUCHI , Toshiya YOKOGAWA
IPC分类号： H01S5/00 , H01S3/04
CPC分类号： H01S5/227 , H01S5/0202 , H01S5/0421 , H01S5/2205 , H01S5/32341
摘要： A semiconductor laser includes a nitride semiconductor substrate with a striped raised portion that extends in a resonant cavity length direction, a masking layer, which has been defined on the principal surface of the nitride semiconductor substrate and which has a striped opening in a selected area on the upper surface of the striped raised portion, and a nitride semiconductor multilayer structure, which has been grown on the selected area on the upper surface of the striped raised portion. The nitride semiconductor multilayer structure is thicker than nitride semiconductors on the masking layer, and the nitride semiconductor multilayer structure is broader in width than the striped opening of the masking layer and includes portions that have grown laterally onto the masking layer.
摘要翻译：半导体激光器包括具有在共振腔长度方向上延伸的条纹凸起部分的氮化物半导体衬底，已经限定在氮化物半导体衬底的主表面上并且在选定区域中具有条纹开口的掩模层条状隆起部分的上表面和氮化物半导体多层结构，其已经在条纹凸起部分的上表面上的选定区域上生长。氮化物半导体多层结构比掩模层上的氮化物半导体更厚，并且氮化物半导体多层结构的宽度比掩蔽层的条纹开口宽，并且包括在掩模层上横向生长的部分。

7. 发明申请

US20070290230A1 Nitride Semiconductor Device And Production Method Thereof 审中-公开
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：US20070290230A1
公开(公告)日：2007-12-20
申请号：US10573211
申请日：2004-09-24
申请人： Yasutoshi Kawaguchi , Toshitaka Shimamoto , Akihiko Ishibashi , Isao Kidoguchi , Toshiya Yokogawa
发明人： Yasutoshi Kawaguchi , Toshitaka Shimamoto , Akihiko Ishibashi , Isao Kidoguchi , Toshiya Yokogawa
IPC分类号： H01L29/06 , H01L21/20
CPC分类号： H01S5/3215 , B82Y20/00 , H01L33/025 , H01L33/04 , H01L33/14 , H01L33/32 , H01S5/2009 , H01S5/22 , H01S5/2214 , H01S5/3054 , H01S5/3063 , H01S5/3072 , H01S5/3077 , H01S5/3213 , H01S5/3216 , H01S5/34333 , H01S2304/04
摘要： A nitride semiconductor device according to the present invention includes a p-type nitride semiconductor layer, an n-type nitride semiconductor layer, and an active layer interposed between the p-type nitride semiconductor layer and the n-type nitride semiconductor layer. The p-type nitride semiconductor layer includes: a first p-type nitride semiconductor layer containing Al and Mg; and a second p-type nitride semiconductor layer containing Mg. The first p-type nitride semiconductor layer is located between the active layer and the second p-type nitride semiconductor layer, and the second p-type nitride semiconductor layer has a greater band gap than a band gap of the first p-type nitride semiconductor layer.
摘要翻译：根据本发明的氮化物半导体器件包括p型氮化物半导体层，n型氮化物半导体层和介于p型氮化物半导体层和n型氮化物半导体层之间的有源层。 p型氮化物半导体层包括：含有Al和Mg的第一p型氮化物半导体层; 以及包含Mg的第二p型氮化物半导体层。第一p型氮化物半导体层位于有源层和第二p型氮化物半导体层之间，第二p型氮化物半导体层的带隙比第一p型氮化物半导体层的带隙大层。

8. 发明申请

US20060166478A1 Nitride semiconductor device and its manufacturing method 失效
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：US20060166478A1
公开(公告)日：2006-07-27
申请号：US10547968
申请日：2004-03-09
申请人： Gaku Sugahara , Yasutoshi Kawaguchi , Akihiko Ishibashi , Isao Kidoguchi , Toshiya Yokogawa
发明人： Gaku Sugahara , Yasutoshi Kawaguchi , Akihiko Ishibashi , Isao Kidoguchi , Toshiya Yokogawa
IPC分类号： H01L33/00 , H01L21/28 , H01L29/24 , H01L21/3205
CPC分类号： H01S5/227 , H01S5/0202 , H01S5/0421 , H01S5/2205 , H01S5/32341
摘要： A method for fabricating nitride semiconductor devices according to the present invention includes the steps of: (A) providing a nitride semiconductor substrate, which will be split into chip substrates, which includes device portions that will function as the respective chip substrates when the substrate is split and interdevice portions that connect the device portions together, and in which the average thickness of the interdevice portions is smaller than the thickness of the device portions; (B) defining a masking layer, which has striped openings over the device portions, on the upper surface of the nitride semiconductor substrate; (C) selectively growing nitride semiconductor layers on portions of the upper surface of the nitride semiconductor substrate, which are exposed through the openings of the masking layer; and (D) cleaving the nitride semiconductor substrate along the interdevice portions of the nitride semiconductor substrate, thereby forming nitride semiconductor devices on the respectively split chip substrates.
摘要翻译：根据本发明的制造氮化物半导体器件的方法包括以下步骤：（A）提供将被分成芯片衬底的氮化物半导体衬底，其包括当衬底为基底时用作各个芯片衬底的器件部分将装置部分连接在一起的分割和互连部分，并且其中，所述装置间部分的平均厚度小于所述装置部分的厚度; （B）在氮化物半导体衬底的上表面上限定在器件部分上具有条纹开口的掩模层; （C）在氮化物半导体衬底的上表面的通过掩模层的开口露出的部分上选择性地生长氮化物半导体层; 以及（D）沿着氮化物半导体衬底的间隙部分切割氮化物半导体衬底，从而在分别的芯片衬底上形成氮化物半导体器件。

9. 发明授权

US06858877B2 Nitride semiconductor, method for manufacturing the same and nitride semiconductor device 有权
标题翻译：氮化物半导体，其制造方法和氮化物半导体器件
公开(公告)号：US06858877B2
公开(公告)日：2005-02-22
申请号：US10352256
申请日：2003-01-28
申请人： Yasutoshi Kawaguchi , Akihiko Ishibashi , Ayumu Tsujimura , Nobuyuki Otsuka
发明人： Yasutoshi Kawaguchi , Akihiko Ishibashi , Ayumu Tsujimura , Nobuyuki Otsuka
IPC分类号： H01L21/20 , H01L33/00 , H01S5/343
CPC分类号： B82Y20/00 , H01L21/0237 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L21/02639 , H01L21/0265 , H01L33/007 , H01S5/34333
摘要： A facet-forming layer made of nitride semiconductor containing at least aluminum is formed on a substrate made of gallium nitride (GaN). A facet surface inclined with respect to a C-surface is formed on the surface of the facet-forming layer, and a selective growth layer laterally grows from the inclined facet surface. As a result, the selective growth layer can substantially lattice-match an n-type cladding layer made of n-type AlGaN and grown on the selective growth layer. For example, a laser structure without cracks being generated can be obtained by crystal growth.
摘要翻译：在由氮化镓（GaN）制成的基板上形成由至少含有铝的氮化物半导体构成的面形成层。在小面形成层的表面上形成有相对于C面倾斜的面面，并且从倾斜面面侧向生长选择性生长层。结果，选择生长层可以使由n型AlGaN制成的n型包覆层基本上晶格匹配并在选择性生长层上生长。例如，可以通过晶体生长获得没有产生裂纹的激光结构。

10. 发明授权

US06764871B2 Method for fabricating a nitride semiconductor device 有权
标题翻译：氮化物半导体器件的制造方法
公开(公告)号：US06764871B2
公开(公告)日：2004-07-20
申请号：US10465647
申请日：2003-06-20
申请人： Yasutoshi Kawaguchi , Akihiko Ishibashi , Ayumu Tsujimura
发明人： Yasutoshi Kawaguchi , Akihiko Ishibashi , Ayumu Tsujimura
IPC分类号： H01L2100
CPC分类号： H01L31/0304 , C30B25/02 , C30B29/40 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L29/2003 , H01L33/007 , Y02E10/544 , Y02P70/521
摘要： A method for fabricating a nitride semiconductor device comprising steps of forming a low-temperature deposited layer composed of a Group III-Group V nitride semiconductor containing at least Al onto a surface of substrate (101) at a first temperature; subjecting the low-temperature deposited layer to heat treatment at a second temperature, which is higher than the first temperature, and converting the low-temperature deposited layer into a faceted layer (102); initially growing a GaN based semiconductor layer (103) onto a surface of the faceted layer at a third temperature; and fully growing the GaN based semiconductor layer at a fourth temperature that is lower than the third temperature. By employing the method for fabricating a nitride semiconductor device according to the present invention, it is possible to provide a nitride semiconductor device with high quality and high reliability.
摘要翻译：一种用于制造氮化物半导体器件的方法，包括以下步骤：在第一温度下将至少包含至少Al的III-V族氮化物半导体组成的低温沉积层形成在衬底（101）的表面上; 使所述低温沉积层在比所述第一温度高的第二温度下进行热处理，并将所述低温沉积层转化为刻面层（102）; 最初在第三温度下将GaN基半导体层（103）生长到所述刻面层的表面上; 以及在低于第三温度的第四温度下完全生长GaN基半导体层。通过采用本发明的氮化物半导体器件的制造方法，可以提供高品质，高可靠性的氮化物半导体器件。

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