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1. 发明申请

US20120327422A1 SEMICONDUCTOR OPTICAL INTEGRATED DEVICE AND OPTICAL COHERENCE TOMOGRAPHIC IMAGING APPARATUS PROVIDED WITH THE SEMICONDUCTOR OPTICAL INTEGRATED DEVICE 审中-公开
标题翻译：半导体光学集成器件和半导体光学集成器件提供的光学相干成像设备
公开(公告)号：US20120327422A1
公开(公告)日：2012-12-27
申请号：US13523107
申请日：2012-06-14
申请人： Yasuhisa Inao , Mamoru Uchida , Takeshi Uchida
发明人： Yasuhisa Inao , Mamoru Uchida , Takeshi Uchida
IPC分类号： H01L31/12 , G01B9/02 , H01L33/04
CPC分类号： H01L27/15 , G01B9/02051 , G01B9/02091 , G02B6/12004 , H01L33/0045
摘要： Provided is a semiconductor optical integrated device, formed by arranging a light emitting element and a light detecting element in a plane of the same substrate, each formed by laminating layers which at least include a first clad layer of a first conductive type, an active layer and a second clad layer of a second conductive type on a substrate, wherein the active layer has a structure where a second active area of a conductive type and an undoped first active area are laminated, and the second active area has the same conductive type as that of the first or second clad layer laminated in the closest position to the second active area. This device suppresses heat generation due to increased operating current and unnecessary light generation at an operation of the light emitting element, and enhancing light absorption efficiency at the an operation of the light emitting element.
摘要翻译：提供了一种半导体光学集成器件，其通过将发光元件和光检测元件布置在同一衬底的平面中而形成，每个通过层压层形成，所述层至少包括第一导电类型的第一覆盖层，有源层以及在基板上具有第二导电类型的第二覆盖层，其中所述有源层具有其中层叠有导电类型的第二有源区和未掺杂的第一有源区的结构，并且所述第二有源区具有与第一或第二包覆层的层压在与第二有效区最接近的位置。该装置抑制由于工作电流的增加和发光元件的动作引起的不必要的光的产生，并且提高了发光元件的动作时的光吸收效率。

2. 发明授权

US08377727B2 Surface-emitting laser and surface-emitting laser array, method of manufacturing a surface-emitting laser and method of manufacturing a surface-emitting laser array, and optical apparatus including a surface-emitting laser array 失效
标题翻译：表面发射激光器和表面发射激光器阵列，制造表面发射激光器的方法和制造表面发射激光器阵列的方法，以及包括表面发射激光器阵列
公开(公告)号：US08377727B2
公开(公告)日：2013-02-19
申请号：US13286973
申请日：2011-11-01
申请人： Yasuhisa Inao , Tatsuro Uchida , Takeshi Uchida
发明人： Yasuhisa Inao , Tatsuro Uchida , Takeshi Uchida
IPC分类号： H01L21/8252 , H01S5/125 , H01S5/323
CPC分类号： H01S5/18391 , H01S5/18313 , H01S2301/166 , H01S2301/176
摘要： Provided is a method of manufacturing a surface-emitting laser capable of preventing characteristics fluctuations within the plane and among wafers and oscillating in a single fundamental transverse mode. The method includes after performing selective oxidation: exposing a bottom face of a surface relief structure by etching a second semiconductor layer with a first semiconductor layer where a pattern of the surface relief structure has been formed as an etching mask and a third semiconductor layer as an etching stop layer; and exposing a top face of the surface relief structure by etching the first semiconductor layer where the pattern of the surface relief structure has been formed, with the second semiconductor layer and the third semiconductor layer as etching stop layer.
摘要翻译：提供一种制造表面发射激光器的方法，其能够防止平面内和晶片之间的特性波动并且以单个基本横向模式振荡。该方法包括在执行选择氧化之后：通过用形成有表面浮雕结构的图案的第一半导体层蚀刻第二半导体层来暴露表面起伏结构的底面作为蚀刻掩模，并且将第三半导体层作为蚀刻停止层; 并且通过蚀刻形成有所述表面浮雕结构的图案的第一半导体层，以所述第二半导体层和所述第三半导体层为蚀刻停止层，使所述表面起伏结构的顶面露出。

3. 发明申请

US20120114005A1 SURFACE-EMITTING LASER AND SURFACE-EMITTING LASER ARRAY, METHOD OF MANUFACTURING A SURFACE-EMITTING LASER AND METHOD OF MANUFACTURING A SURFACE-EMITTING LASER ARRAY, AND OPTICAL APPARATUS INCLUDING A SURFACE-EMITTING LASER ARRAY 失效
标题翻译：表面发射激光和表面发射激光阵列，制造表面发射激光的方法和制造表面发射激光阵列的方法以及包括表面发射激光阵列的光学装置
公开(公告)号：US20120114005A1
公开(公告)日：2012-05-10
申请号：US13286973
申请日：2011-11-01
申请人： Yasuhisa Inao , Tatsuro Uchida , Takeshi Uchida
发明人： Yasuhisa Inao , Tatsuro Uchida , Takeshi Uchida
IPC分类号： H01S5/125 , H01L21/18
CPC分类号： H01S5/18391 , H01S5/18313 , H01S2301/166 , H01S2301/176
摘要： Provided is a method of manufacturing a surface-emitting laser capable of preventing characteristics fluctuations within the plane and among wafers and oscillating in a single fundamental transverse mode. The method includes after performing selective oxidation: exposing a bottom face of a surface relief structure by etching a second semiconductor layer with a first semiconductor layer where a pattern of the surface relief structure has been formed as an etching mask and a third semiconductor layer as an etching stop layer; and exposing a top face of the surface relief structure by etching the first semiconductor layer where the pattern of the surface relief structure has been formed, with the second semiconductor layer and the third semiconductor layer as etching stop layer.
摘要翻译：提供一种制造表面发射激光器的方法，其能够防止平面内和晶片之间的特性波动并且以单个基本横向模式振荡。该方法包括在执行选择氧化之后：通过用形成有表面浮雕结构的图案的第一半导体层蚀刻第二半导体层来暴露表面起伏结构的底面作为蚀刻掩模，并且将第三半导体层作为蚀刻停止层; 并且通过蚀刻形成有所述表面浮雕结构的图案的第一半导体层，以所述第二半导体层和所述第三半导体层为蚀刻停止层，使所述表面起伏结构的顶面露出。

4. 发明授权

US07863061B2 Surface emitting laser manufacturing method, surface emitting laser array manufacturing method, surface emitting laser, surface emitting laser array, and optical apparatus including surface emitting laser array 有权
公开(公告)号：US07863061B2
公开(公告)日：2011-01-04
申请号：US12509635
申请日：2009-07-27
申请人： Mitsuhiro Ikuta , Yasuhisa Inao , Takako Yamaguchi
发明人： Mitsuhiro Ikuta , Yasuhisa Inao , Takako Yamaguchi
IPC分类号： H01L21/00
CPC分类号： H01S5/18391 , H01S5/18311 , H01S5/18347 , H01S2301/166 , H01S2301/176
摘要： Provided is a surface emitting laser manufacturing method, etc., which reduces process damage occurring to a surface relief structure, enabling stable provision of a single transverse mode characteristic. Provided is a method including a surface relief structure for controlling a reflectance in a light emitting portion of an upper mirror, the surface relief structure including a stepped structure, includes: forming a resist pattern including a pattern for forming a mesa structure and a pattern for forming a stepped structure, on or above the upper mirror, and performing first-phase etching for etching the surface layer of the upper mirror to determine the horizontal position of the stepped structure; forming a current confining structure after the performing first-phase etching; and performing second-phase etching for further etching the area that the first-phase etching has been performed, to determine the depth position of the stepped structure, after the forming a current confining structure.

5. 发明授权

US07732121B2 Near-field exposure method 失效
标题翻译：近场曝光法
公开(公告)号：US07732121B2
公开(公告)日：2010-06-08
申请号：US11758958
申请日：2007-06-06
申请人： Natsuhiko Mizutani , Yasuhisa Inao
发明人： Natsuhiko Mizutani , Yasuhisa Inao
IPC分类号： H01L21/70 , G03F7/20
CPC分类号： G03F7/70383 , B82Y10/00 , G03F1/50 , G03F7/2014
摘要： A near-field exposure method includes closely contacting an exposure mask having a light blocking film with small openings, to a photoresist layer formed on a substrate having surface unevenness, and projecting the exposure light of the exposure light source onto the exposure mask so that the photoresist is exposed based on near-field light escaping from the small openings, wherein the near-field exposure is carried out under a condition that a contact region where the light blocking film and the photoresist layer are in contact with each other and a liquid region filled with a liquid between the light blocking film and the photoresist layer coexist between the light blocking film and the photoresist layer.
摘要翻译：近场曝光方法包括将具有小开口的遮光膜的曝光掩模紧密接触到具有表面凹凸的基板上形成的光致抗蚀剂层，并将曝光光源的曝光光投射到曝光掩模上，使得基于从小开口逸出的近场光来曝光光致抗蚀剂，其中在遮光膜和光致抗蚀剂层彼此接触的接触区域和液体区域的条件下进行近场曝光在遮光膜和光致抗蚀剂层之间填充有液体，遮光膜和光致抗蚀剂层共存。

6. 发明申请

US20070218398A1 Photosensitive silane coupling agent, method of modifying surface, method of forming pattern, and method of fabricating device 失效
标题翻译：光敏性硅烷偶联剂，表面改性方法，成型方法及其制造方法
公开(公告)号：US20070218398A1
公开(公告)日：2007-09-20
申请号：US11705787
申请日：2007-02-14
申请人： Toshiki Ito , Natsuhiko Mizutani , Takako Yamaguchi , Yasuhisa Inao
发明人： Toshiki Ito , Natsuhiko Mizutani , Takako Yamaguchi , Yasuhisa Inao
IPC分类号： G03C5/18
CPC分类号： G03F7/0755 , C07F7/12 , C07F7/1804 , G03F7/022 , G03F7/0751 , G03F7/165
摘要： Provided are a photosensitive silane coupling agent for forming a low-defect microparticle pattern, dot array pattern, or hole array pattern through fewer steps, and a method of forming a pattern using such photosensitive silane coupling agent. Used is a photosensitive silane coupling agent comprising a 1,2-naphthoquinone-2-diazido-5-sulfonyl group or a 1,2-naphthoquinone-2-diazido-4-sulfonyl. group.
摘要翻译：提供了用于通过较少步骤形成低缺陷微粒图案，点阵列图案或孔阵列图案的感光性硅烷偶联剂，以及使用这种感光性硅烷偶联剂形成图案的方法。使用的是含有1,2-萘醌-2-二叠氮基-5-磺酰基或1,2-萘醌-2-二叠氮基-4-磺酰基的感光性硅烷偶联剂。组。

7. 发明申请

US20070146680A1 Exposure apparatus, exposure method, and exposure mask 失效
标题翻译：曝光装置，曝光方法和曝光掩模
公开(公告)号：US20070146680A1
公开(公告)日：2007-06-28
申请号：US10554993
申请日：2005-06-24
申请人： Yasuhisa Inao , Ryo Kuroda , Natsuhiko Mizutani
发明人： Yasuhisa Inao , Ryo Kuroda , Natsuhiko Mizutani
IPC分类号： G03B27/62
CPC分类号： G03F7/7035 , B82Y10/00 , G03F1/50 , G03F1/60 , G03F7/2014 , G03F7/70325 , G03F7/70433 , G03F7/70691 , G03F9/703 , G03F9/7053 , G03F9/7088
摘要： Disclosed is an exposure apparatus, an exposure method and an exposure mask, for improved optical lithography. Specifically, in accordance with one preferred form of the invention, the exposure apparatus is arranged to be used with an exposure mask having an elastically deformable holding member and a light blocking film provided on the holding member and being formed with an opening pattern, wherein for exposure the exposure mask is flexed to be brought into contact with an object to be exposed. The exposure apparatus includes a distance detecting system for detecting a distance between the exposure mask before being flexed and the object to be exposed, and a distance controlling system for controlling the distance between the exposure mask before being flexed and the object to be exposed, on the basis of a signal from the distance detecting system.
摘要翻译：公开了一种用于改进的光刻技术的曝光装置，曝光方法和曝光掩模。具体地，根据本发明的一个优选形式，曝光装置被布置成与具有可弹性变形的保持构件和设置在保持构件上并形成有开口图案的遮光膜的曝光掩模一起使用，其中，暴露曝光掩模被弯曲以与待曝光的物体接触。曝光装置包括用于检测在弯曲之前的曝光掩模与待曝光的物体之间的距离的距离检测系统，以及用于控制在弯曲之前的曝光掩模与待曝光的物体之间的距离的距离控制系统，来自距离检测系统的信号的基础。

8. 发明申请

US20070065734A1 Exposure method, exposure mask, and exposure apparatus 审中-公开
标题翻译：曝光方法，曝光掩模和曝光装置
公开(公告)号：US20070065734A1
公开(公告)日：2007-03-22
申请号：US11548756
申请日：2006-10-12
申请人： Yasuhisa Inao , Ryo Kuroda , Natsuhiko Mizutani
发明人： Yasuhisa Inao , Ryo Kuroda , Natsuhiko Mizutani
IPC分类号： G03C5/00 , G03F1/00
CPC分类号： G03F7/7035 , B82Y10/00 , G03F1/50 , G03F7/2014 , G03F7/70325 , G03F7/70566
摘要： An exposure method for exposing a workpiece on the basis of near-field light escaping from an opening of a mask. The method includes projecting non-polarized exposure light having a predetermined wavelength, emitted from a laser light source and passed through a depolarization device and a diffusion device, onto an exposure mask having a light blocking film formed with a plurality of rectangular openings therein, the openings having (i) a width in a widthwise direction not greater than one-third of the wavelength of the exposure light and (ii) two or more lengthwise directions extending along the mask surface, so that near-field light escaping from the openings performs exposure of a pattern on the basis of the openings.
摘要翻译：一种用于基于从掩模的开口逸出的近场光暴露工件的曝光方法。该方法包括将从激光源射出并通过去极化装置和扩散装置的具有预定波长的非偏振曝光光投射到具有形成有多个矩形开口的遮光膜的曝光掩模上，具有（i）宽度方向的宽度不大于曝光光的波长的三分之一的开口和（ii）沿着掩模表面延伸的两个或更多个长度方向，使得从开口逸出的近场光执行在开口的基础上曝光图案。

9. 发明申请

US20050064301A1 Mask manufacturing method 审中-公开
标题翻译：面膜制作方法
公开(公告)号：US20050064301A1
公开(公告)日：2005-03-24
申请号：US10931985
申请日：2004-09-02
申请人： Takako Yamaguchi , Yasuhisa Inao
发明人： Takako Yamaguchi , Yasuhisa Inao
IPC分类号： G03C5/00 , G03F1/24 , G03F1/68 , G03F7/20 , G03F9/00 , H01L21/027
CPC分类号： B82Y10/00 , G03F1/50 , G03F7/7035
摘要： A mask manufacturing method includes a first step of forming, on a workpiece substrate, a fine pattern on the basis of a pattern of a fine opening having a size of not more than a wavelength of exposure light by irradiating the workpiece substrate with the exposure light through a first mask provided with the fine opening and using near-field light leaking from the fine opening; and a second step of forming a second mask by processing the workpiece substrate on the basis of the fine pattern formed in the first step.
摘要翻译：掩模制造方法包括：第一步骤，通过用曝光光照射工件基板，在工件基板上形成基于具有不大于曝光光的波长的尺寸的微细开口的图案的精细图案通过设置有微细开口的第一掩模和使用从微细开口泄漏的近场光; 以及通过基于在第一步骤中形成的精细图案处理工件基板来形成第二掩模的第二步骤。

10. 发明授权

US06628392B2 Light modulation apparatus and optical switch, movement detecting device and distance measuring device, alignment device and semiconductor aligner, and processes thereof 失效
标题翻译：光调制装置和光开关，移动检测装置和距离测量装置，对准装置和半导体对准器及其处理
公开(公告)号：US06628392B2
公开(公告)日：2003-09-30
申请号：US09931720
申请日：2001-08-20
申请人： Ryo Kuroda , Yasuhiro Shimada , Junichi Seki , Takako Yamaguchi , Yasuhisa Inao
发明人： Ryo Kuroda , Yasuhiro Shimada , Junichi Seki , Takako Yamaguchi , Yasuhisa Inao
IPC分类号： G01B1100
CPC分类号： G03F9/703 , G03F9/7038 , G03F9/7049 , G03F9/7088
摘要： Disclosed herein is a light modulating apparatus comprising first and second two periodic structures each having a period smaller than the wavelength of light emitted from a light source, and a moving means for relatively moving the two periodic structures, wherein the surface of the first periodic structure is brought near to the surface of the second periodic structure to a space not longer than the wavelength to arrange them in a state opposed to each other, the light incident on the first periodic structure is converted into near-field light by the first periodic structure, the converted near-field light is transmitted through the second periodic structure and converted into propagation light by scattering the near-field light on the back surface of the second periodic structure, and the intensity of the propagation light is modulated by relatively moving the two periodic structures by the moving means.
摘要翻译：这里公开了一种光调制装置，其包括第一和第二两个周期性结构，每个周期结构的周期小于从光源发射的光的波长;以及移动装置，用于相对移动两个周期性结构，其中第一周期性结构的表面被带到第二周期性结构的表面附近到不长于波长的空间以将它们布置成彼此相对的状态，入射到第一周期性结构的光被第一周期性结构转换成近场光转换的近场光透过第二周期结构传播，并通过散射第二周期结构的背面上的近场光而转换为传播光，并且传播光的强度通过相对移动两个通过移动装置的周期性结构。

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