专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20050060582A1 Apparatus and method for providing real-time traceback connection using connection redirection technique 审中-公开
标题翻译：使用连接重定向技术提供实时追溯连接的装置和方法
公开(公告)号：US20050060582A1
公开(公告)日：2005-03-17
申请号：US10749744
申请日：2003-12-30
申请人： Yang Choi , Hwan Kim , Dong Seo , Sangho Lee
发明人： Yang Choi , Hwan Kim , Dong Seo , Sangho Lee
IPC分类号： H04L12/28 , G06F11/30 , H04L29/06
CPC分类号： H04L63/1441 , H04L2463/146
摘要： An apparatus and method for providing traceback connection using a connection redirection technique are provided. A packet blocking unit blocks an attack packet transmitted to the system and a first response packet output from the system in response to the attack packet, if a system attack sensing signal is received. A response packet generation unit generates a second response packet into which a watermark is inserted, in response to the attack packet, and transmits the second response packet to a system corresponding to the source address of the attack packet. A path traceback unit receives a detection packet containing transmission path information of the second response packet from a system existing on a transmission path of the second response packet, and based on the received detection packet, traces back the transmission path of the second response packet and identifies the location of the attacker system. According to the apparatus and method, even when an attacker attacks a predetermined system via a plurality of systems, the actual location of the attacker system can be traced back fast and accurately and damage of the victim system can be minimized.
摘要翻译：提供了一种使用连接重定向技术提供回溯连接的装置和方法。如果接收到系统攻击感知信号，则分组阻塞单元阻止发送到系统的攻击分组和响应于攻击分组从系统输出的第一响应分组。响应分组生成单元响应于攻击分组生成插入了水印的第二响应分组，并将第二响应分组发送到与攻击分组的源地址对应的系统。路径追溯单元从存在于第二响应分组的传输路径上的系统接收包含第二响应分组的传输路径信息的检测分组，并且基于接收到的检测分组，追踪第二响应分组的传输路径，识别攻击者系统的位置。根据该装置和方法，即使攻击者通过多个系统攻击预定的系统，也可以快速，准确地跟踪攻击者系统的实际位置，并且可以使受害者系统的损坏最小化。

2. 发明授权

US08704366B2 Ultra thin bumped wafer with under-film 有权
标题翻译：带薄膜的超薄凸起晶圆
公开(公告)号：US08704366B2
公开(公告)日：2014-04-22
申请号：US12911592
申请日：2010-10-25
申请人： Junghoon Shin , Sangho Lee , Sungyoon Lee
发明人： Junghoon Shin , Sangho Lee , Sungyoon Lee
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L21/78 , H01L2224/16225 , H01L2224/32225 , H01L2224/73104 , H01L2224/73204 , H01L2924/00011 , H01L2924/00014 , H01L2924/00 , H01L2224/0401
摘要： A semiconductor device includes a wafer and a dicing saw tape that is laminated to a back surface of the wafer. An active surface of the wafer is opposite the back surface of the wafer. The semiconductor device further includes a lamination tape disposed in contact with the wafer. The lamination tape includes an under-film layer contacting the active surface of the wafer. The lamination tape further includes an adhesive layer contacting the under-film layer.
摘要翻译：半导体器件包括层叠到晶片的背面的晶片和切割锯带。晶片的活性表面与晶片的背面相对。半导体器件还包括与晶片接触设置的层压带。层压带包括与晶片的活性表面接触的底膜层。层压带还包括与底膜层接触的粘合剂层。

3. 外观设计

USD650604S1 Chair 有权
公开(公告)号：USD650604S1
公开(公告)日：2011-12-20
申请号：US29383680
申请日：2011-01-20
申请人： Sangho Lee
设计人： Sangho Lee

4. 外观设计

USD641562S1 Chair 有权
标题翻译：椅子
公开(公告)号：USD641562S1
公开(公告)日：2011-07-19
申请号：US29383681
申请日：2011-01-20
申请人： Sangho Lee
设计人： Sangho Lee

5. 发明申请

US20110037172A1 Ultra Thin Bumped Wafer With Under-Film 有权
标题翻译：带薄膜的超薄冲压薄片
公开(公告)号：US20110037172A1
公开(公告)日：2011-02-17
申请号：US12911592
申请日：2010-10-25
申请人： Junghoon Shin , Sangho Lee , Sungyoon Lee
发明人： Junghoon Shin , Sangho Lee , Sungyoon Lee
IPC分类号： H01L23/498 , H01L23/00
CPC分类号： H01L21/78 , H01L2224/16225 , H01L2224/32225 , H01L2224/73104 , H01L2224/73204 , H01L2924/00011 , H01L2924/00014 , H01L2924/00 , H01L2224/0401
摘要： A semiconductor device includes a wafer and a dicing saw tape that is laminated to a back surface of the wafer. An active surface of the wafer is opposite the back surface of the wafer. The semiconductor device further includes a lamination tape disposed in contact with the wafer. The lamination tape includes an under-film layer contacting the active surface of the wafer. The lamination tape further includes an adhesive layer contacting the under-film layer.
摘要翻译：半导体器件包括层叠到晶片的背面的晶片和切割锯带。晶片的活性表面与晶片的背面相对。半导体器件还包括与晶片接触设置的层压带。层压带包括与晶片的活性表面接触的底膜层。层压带还包括与底膜层接触的粘合剂层。

6. 发明授权

US07838391B2 Ultra thin bumped wafer with under-film 有权
标题翻译：带薄膜的超薄凸起晶圆
公开(公告)号：US07838391B2
公开(公告)日：2010-11-23
申请号：US11745045
申请日：2007-05-07
申请人： Junghoon Shin , Sangho Lee , Sungyoon Lee
发明人： Junghoon Shin , Sangho Lee , Sungyoon Lee
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/78 , H01L2224/16225 , H01L2224/32225 , H01L2224/73104 , H01L2224/73204 , H01L2924/00011 , H01L2924/00014 , H01L2924/00 , H01L2224/0401
摘要： A semiconductor device begins with a wafer having a plurality of bumps formed on a surface of the wafer. An under-film layer is formed over the wafer to completely cover all portions of the bumps with the under-film layer. An adhesive layer is formed over the under-film layer. A support layer is attached over the adhesive layer. A back surface of the wafer undergoes grinding. The support layer provides structural support to the wafer. The support layer is removed to expose the adhesive layer. The adhesive layer is removed to expose the under-film layer. The wafer is singulated into semiconductor die. The semiconductor die is mounted to a substrate by applying force to a back surface of the semiconductor die to press the bumps through under-film layer to contact the substrate while the under-film layer provides an underfill between the semiconductor die and substrate.
摘要翻译：半导体器件开始于在晶片的表面上形成有多个凸块的晶片。在晶片之上形成底膜层，以完全覆盖具有底膜层的凸块的所有部分。在底膜层上形成粘合剂层。支撑层附着在粘合剂层上。晶片的后表面进行研磨。支撑层为晶片提供结构支撑。去除支撑层以暴露粘合剂层。去除粘合剂层以暴露底膜层。将晶片分成半导体芯片。通过向半导体管芯的背面施加力将半导体管芯安装到基板上，以通过底膜层将凸块按压以接触基板，同时底膜层在半导体管芯和基板之间提供底部填充。

7. 发明授权

US08329554B2 Ultra thin bumped wafer with under-film 有权
标题翻译：带薄膜的超薄凸起晶圆
公开(公告)号：US08329554B2
公开(公告)日：2012-12-11
申请号：US12916758
申请日：2010-11-01
申请人： Junghoon Shin , Sangho Lee , Sungyoon Lee
发明人： Junghoon Shin , Sangho Lee , Sungyoon Lee
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/78 , H01L2224/16225 , H01L2224/32225 , H01L2224/73104 , H01L2224/73204 , H01L2924/00011 , H01L2924/00014 , H01L2924/00 , H01L2224/0401
摘要： A method of making a semiconductor device includes forming an under-film layer over bumps disposed on a surface of a wafer to completely cover the bumps, and forming an adhesive layer over the under-film layer. The method further includes attaching a support layer over the adhesive layer, removing a portion of a back surface of the wafer, and removing the support layer to expose the adhesive layer that remains disposed over the under-film layer. The method further includes removing the adhesive layer to expose the under-film layer while the bumps remain completely covered by the under-film layer, and singulating the wafer to form a semiconductor die. The method further includes pressing the bumps into contact with a substrate while the under-film layer provides an underfill between the semiconductor die and the substrate.
摘要翻译：制造半导体器件的方法包括在设置在晶片表面上的凸起上形成底膜层，以完全覆盖凸块，并在底膜层上形成粘合剂层。所述方法还包括将粘合剂层附着在粘合剂层上，去除晶片后表面的一部分，以及去除支撑层以暴露保留设置在底膜层上的粘合剂层。该方法还包括去除粘合剂层以暴露底膜层，同时凸块保持完全被底膜层覆盖，并且单晶化晶片以形成半导体管芯。该方法进一步包括按压凸块与基底接触，同时底膜层在半导体管芯和衬底之间提供底部填充。

8. 外观设计

USD651424S1 Chair 有权
公开(公告)号：USD651424S1
公开(公告)日：2012-01-03
申请号：US29383685
申请日：2011-01-20
申请人： Sangho Lee
设计人： Sangho Lee

9. 发明申请

US20100138671A1 METHODS AND APPARATUSES FOR PROVIDING DRM INTEROPERABILITY 有权
标题翻译：提供DRM互操作性的方法和设备
公开(公告)号：US20100138671A1
公开(公告)日：2010-06-03
申请号：US12630646
申请日：2009-12-03
申请人： Jong Kim , Sangho Lee , Heejin Park
发明人： Jong Kim , Sangho Lee , Heejin Park
IPC分类号： G06F21/24
CPC分类号： G06F21/10 , G06F2221/0728
摘要： Methods and apparatuses for providing DRM interoperability are provided. Proxy re-encryption technique using bilinear map is used, and the same content can be used in different devices. According to the method of providing DRM interoperability includes in proxy agent with respect to digital rights management (DRM) service providers and device which supports predetermined DRM, first DRM service provider, second DRM service provider, the proxy agent, and the device identify each other, and proxy re-encrypt an interoperable content (IC) and provide the IC to the device. The IC is second-level encrypted by using a key of the first DRM service provider, and the proxy re-encryption is performed by using a proxy key generated from proxy key information provided from the first DRM service provider and the second DRM service provider. Therefore, a problem in which interoperability cannot be guaranteed since a DRM technique depends on a service provider is resolved.
摘要翻译：提供了提供DRM互操作性的方法和设备。使用双线性映射的代理重新加密技术，相同的内容可以在不同的设备中使用。根据提供DRM互操作性的方法，其包括关于数字权限管理（DRM）服务提供商的代理代理和支持预定DRM的设备，第一DRM服务提供商，第二DRM服务提供商，代理代理和设备彼此识别，并且代理重新加密可互操作的内容（IC）并将IC提供给设备。 IC通过使用第一DRM服务提供商的密钥进行二级加密，并且通过使用从第一DRM服务提供商和第二DRM服务提供商提供的代理密钥信息生成的代理密钥来执行代理重新加密。因此，解决了DRM技术取决于服务提供商的互操作性不能保证的问题。

10. 发明授权

US06991888B2 Photoresist composition for deep ultraviolet lithography comprising a mixture of photoactive compounds 有权
标题翻译：用于深紫外光刻的光致抗蚀剂组合物，其包含光活性化合物的混合物
公开(公告)号：US06991888B2
公开(公告)日：2006-01-31
申请号：US10439472
申请日：2003-05-16
申请人： Munirathna Padmanaban , Takanori Kudo , Sangho Lee , Ralph R. Dammel , M. Dalil Rahman
发明人： Munirathna Padmanaban , Takanori Kudo , Sangho Lee , Ralph R. Dammel , M. Dalil Rahman
IPC分类号： G03F7/004 , C08F2/46 , C07C53/00 , G03C5/00
CPC分类号： G03F7/0392 , G03F7/0045 , Y10S430/115
摘要： The present invention relates to a novel photoresist composition that can be developed with an aqueous alkaline solution, and is capable of being imaged at exposure wavelengths in the deep ultraviolet. The invention also relates to a process for imaging the novel photoresist as well as novel photoacid generators.The novel photoresist comprises a) a polymer containing an acid labile group, and b) a novel mixture of photoactive compounds, where the mixture comprises a lower absorbing compound selected from structure 1 and 2, and a higher absorbing compound selected from structure 4 and 5, where, R1 and R2 R5, R6, R7, R8, and R9 are defined herein; m=1–5; X− is an anion, and Ar is selected from naphthyl, anthracyl, and structure 3, where R30, R31, R32, R33, and R34 are defined herein.
摘要翻译：本发明涉及一种可用碱性水溶液显影的新型光刻胶组合物，能够在深紫外线的曝光波长下成像。本发明还涉及用于对新型光致抗蚀剂以及新型光酸产生剂进行成像的方法。新型光致抗蚀剂包含a）含有酸不稳定基团的聚合物，和b）光活性化合物的新混合物，其中该混合物包含选自结构1和2的较低吸收化合物和选自结构4和5的较高吸收化合物，其中R 1和R 2 R 5，R 6，R 7，或N R 8，R 9和R 9在本文中定义; m = 1-5; X - 是阴离子，Ar选自萘基，蒽基和结构3，其中R 30，R 31，R SUB > 32，R 33和R 34在本文中定义。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式