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1. 发明授权

US09136144B2 Method of forming protective material between semiconductor die stacked on semiconductor wafer to reduce defects during singulation 有权
标题翻译：在半导体晶片上堆叠的半导体管芯之间形成保护材料以减少切割期间的缺陷的方法
公开(公告)号：US09136144B2
公开(公告)日：2015-09-15
申请号：US12617877
申请日：2009-11-13
申请人： TaegKi Lim , JaEun Yun , SungYoon Lee
发明人： TaegKi Lim , JaEun Yun , SungYoon Lee
IPC分类号： H01L21/44 , H01L21/48 , H01L21/50 , H01L21/56 , H01L21/683 , H01L23/498 , H01L25/065 , H01L23/31 , H01L23/48 , H01L23/00
CPC分类号： H01L21/563 , H01L21/6836 , H01L23/3121 , H01L23/481 , H01L23/49827 , H01L23/49838 , H01L24/13 , H01L24/14 , H01L24/81 , H01L24/94 , H01L24/97 , H01L25/0657 , H01L2221/68359 , H01L2224/13099 , H01L2224/131 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/16225 , H01L2224/16235 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/73203 , H01L2224/73204 , H01L2224/73265 , H01L2224/83102 , H01L2224/92125 , H01L2224/94 , H01L2224/97 , H01L2225/06572 , H01L2924/00011 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01029 , H01L2924/01032 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/10252 , H01L2924/10253 , H01L2924/10272 , H01L2924/10329 , H01L2924/12041 , H01L2924/12042 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/1433 , H01L2924/15311 , H01L2924/181 , H01L2924/18161 , H01L2924/19011 , H01L2924/19041 , H01L2924/19043 , H01L2924/19103 , H01L2924/30105 , H01L2224/81 , H01L2924/00 , H01L2924/00014 , H01L2924/00012 , H01L2224/81805
摘要： A semiconductor wafer contains first semiconductor die. TSVs are formed through the semiconductor wafer. Second semiconductor die are mounted to a first surface of the semiconductor wafer. A first tape is applied to on a second surface of the semiconductor wafer. A protective material is formed over the second die and first surface of the wafer. The protective material can be encapsulant or polyvinyl alcohol and water. The wafer is singulated between the second die into individual die-to-wafer packages each containing the second die stacked on the first die. The protective material protects the wafer during singulation. The die-to-wafer package can be mounted to a substrate. A build-up interconnect structure can be formed over the die-to-wafer package. The protective material can be removed. Underfill material can be deposited beneath the first and second die. An encapsulant is deposited over the die-to-wafer package.
摘要翻译：半导体晶片包含第一半导体管芯。 TSV通过半导体晶片形成。第二半导体管芯安装到半导体晶片的第一表面。将第一带施加到半导体晶片的第二表面上。在第二管芯和晶片的第一表面上形成保护材料。保护材料可以是密封剂或聚乙烯醇和水。将晶片在第二管芯之间分离成各自的管芯到晶片封装，每个封装包含堆叠在第一管芯上的第二管芯。保护材料在切割过程中保护晶片。晶片封装可以安装到基板上。可以在晶片到晶片封装上形成堆积互连结构。可以去除保护材料。底部填充材料可以沉积在第一和第二模具下方。密封剂沉积在晶片到晶片封装上。

2. 发明授权

US08704366B2 Ultra thin bumped wafer with under-film 有权
标题翻译：带薄膜的超薄凸起晶圆
公开(公告)号：US08704366B2
公开(公告)日：2014-04-22
申请号：US12911592
申请日：2010-10-25
申请人： Junghoon Shin , Sangho Lee , Sungyoon Lee
发明人： Junghoon Shin , Sangho Lee , Sungyoon Lee
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L21/78 , H01L2224/16225 , H01L2224/32225 , H01L2224/73104 , H01L2224/73204 , H01L2924/00011 , H01L2924/00014 , H01L2924/00 , H01L2224/0401
摘要： A semiconductor device includes a wafer and a dicing saw tape that is laminated to a back surface of the wafer. An active surface of the wafer is opposite the back surface of the wafer. The semiconductor device further includes a lamination tape disposed in contact with the wafer. The lamination tape includes an under-film layer contacting the active surface of the wafer. The lamination tape further includes an adhesive layer contacting the under-film layer.
摘要翻译：半导体器件包括层叠到晶片的背面的晶片和切割锯带。晶片的活性表面与晶片的背面相对。半导体器件还包括与晶片接触设置的层压带。层压带包括与晶片的活性表面接触的底膜层。层压带还包括与底膜层接触的粘合剂层。

3. 发明申请

US20110037172A1 Ultra Thin Bumped Wafer With Under-Film 有权
标题翻译：带薄膜的超薄冲压薄片
公开(公告)号：US20110037172A1
公开(公告)日：2011-02-17
申请号：US12911592
申请日：2010-10-25
申请人： Junghoon Shin , Sangho Lee , Sungyoon Lee
发明人： Junghoon Shin , Sangho Lee , Sungyoon Lee
IPC分类号： H01L23/498 , H01L23/00
CPC分类号： H01L21/78 , H01L2224/16225 , H01L2224/32225 , H01L2224/73104 , H01L2224/73204 , H01L2924/00011 , H01L2924/00014 , H01L2924/00 , H01L2224/0401
摘要： A semiconductor device includes a wafer and a dicing saw tape that is laminated to a back surface of the wafer. An active surface of the wafer is opposite the back surface of the wafer. The semiconductor device further includes a lamination tape disposed in contact with the wafer. The lamination tape includes an under-film layer contacting the active surface of the wafer. The lamination tape further includes an adhesive layer contacting the under-film layer.
摘要翻译：半导体器件包括层叠到晶片的背面的晶片和切割锯带。晶片的活性表面与晶片的背面相对。半导体器件还包括与晶片接触设置的层压带。层压带包括与晶片的活性表面接触的底膜层。层压带还包括与底膜层接触的粘合剂层。

4. 发明授权

US07838391B2 Ultra thin bumped wafer with under-film 有权
标题翻译：带薄膜的超薄凸起晶圆
公开(公告)号：US07838391B2
公开(公告)日：2010-11-23
申请号：US11745045
申请日：2007-05-07
申请人： Junghoon Shin , Sangho Lee , Sungyoon Lee
发明人： Junghoon Shin , Sangho Lee , Sungyoon Lee
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/78 , H01L2224/16225 , H01L2224/32225 , H01L2224/73104 , H01L2224/73204 , H01L2924/00011 , H01L2924/00014 , H01L2924/00 , H01L2224/0401
摘要： A semiconductor device begins with a wafer having a plurality of bumps formed on a surface of the wafer. An under-film layer is formed over the wafer to completely cover all portions of the bumps with the under-film layer. An adhesive layer is formed over the under-film layer. A support layer is attached over the adhesive layer. A back surface of the wafer undergoes grinding. The support layer provides structural support to the wafer. The support layer is removed to expose the adhesive layer. The adhesive layer is removed to expose the under-film layer. The wafer is singulated into semiconductor die. The semiconductor die is mounted to a substrate by applying force to a back surface of the semiconductor die to press the bumps through under-film layer to contact the substrate while the under-film layer provides an underfill between the semiconductor die and substrate.
摘要翻译：半导体器件开始于在晶片的表面上形成有多个凸块的晶片。在晶片之上形成底膜层，以完全覆盖具有底膜层的凸块的所有部分。在底膜层上形成粘合剂层。支撑层附着在粘合剂层上。晶片的后表面进行研磨。支撑层为晶片提供结构支撑。去除支撑层以暴露粘合剂层。去除粘合剂层以暴露底膜层。将晶片分成半导体芯片。通过向半导体管芯的背面施加力将半导体管芯安装到基板上，以通过底膜层将凸块按压以接触基板，同时底膜层在半导体管芯和基板之间提供底部填充。

5. 发明授权

US08329554B2 Ultra thin bumped wafer with under-film 有权
标题翻译：带薄膜的超薄凸起晶圆
公开(公告)号：US08329554B2
公开(公告)日：2012-12-11
申请号：US12916758
申请日：2010-11-01
申请人： Junghoon Shin , Sangho Lee , Sungyoon Lee
发明人： Junghoon Shin , Sangho Lee , Sungyoon Lee
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/78 , H01L2224/16225 , H01L2224/32225 , H01L2224/73104 , H01L2224/73204 , H01L2924/00011 , H01L2924/00014 , H01L2924/00 , H01L2224/0401
摘要： A method of making a semiconductor device includes forming an under-film layer over bumps disposed on a surface of a wafer to completely cover the bumps, and forming an adhesive layer over the under-film layer. The method further includes attaching a support layer over the adhesive layer, removing a portion of a back surface of the wafer, and removing the support layer to expose the adhesive layer that remains disposed over the under-film layer. The method further includes removing the adhesive layer to expose the under-film layer while the bumps remain completely covered by the under-film layer, and singulating the wafer to form a semiconductor die. The method further includes pressing the bumps into contact with a substrate while the under-film layer provides an underfill between the semiconductor die and the substrate.
摘要翻译：制造半导体器件的方法包括在设置在晶片表面上的凸起上形成底膜层，以完全覆盖凸块，并在底膜层上形成粘合剂层。所述方法还包括将粘合剂层附着在粘合剂层上，去除晶片后表面的一部分，以及去除支撑层以暴露保留设置在底膜层上的粘合剂层。该方法还包括去除粘合剂层以暴露底膜层，同时凸块保持完全被底膜层覆盖，并且单晶化晶片以形成半导体管芯。该方法进一步包括按压凸块与基底接触，同时底膜层在半导体管芯和衬底之间提供底部填充。

6. 发明授权

US08030769B2 Grooving bumped wafer pre-underfill system 有权
标题翻译：开槽冲击晶片预底部填充系统
公开(公告)号：US08030769B2
公开(公告)日：2011-10-04
申请号：US12763390
申请日：2010-04-20
申请人： Junghoon Shin , Sungyoon Lee , Taewoo Lee
发明人： Junghoon Shin , Sungyoon Lee , Taewoo Lee
IPC分类号： H01L23/48
CPC分类号： H01L21/78 , H01L21/561 , H01L21/568 , H01L21/6836 , H01L23/3114 , H01L24/13 , H01L2224/16 , H01L2224/27416 , H01L2224/73104 , H01L2924/00011 , H01L2924/00014 , H01L2924/01079 , H01L2924/14 , H01L2224/0401
摘要： A method of forming a semiconductor device includes providing a bumped wafer. A plurality of grooves is formed in an active surface of the bumped wafer. A pre-underfill layer is disposed over the active surface, filling the plurality of grooves. A first adhesive layer is mounted to the pre-underfill layer, and a back surface of the bumped wafer is ground. A second adhesive layer is mounted to the back surface of the bumped wafer. The first adhesive layer is peeled from the active surface of the bumped wafer, or the second adhesive layer is mounted to the first adhesive layer. The bumped wafer is singulated into a plurality of segments by cutting the bumped wafer along the plurality of grooves.
摘要翻译：形成半导体器件的方法包括提供凸起的晶片。在凸起的晶片的有源表面上形成多个沟槽。预底部填充层设置在活性表面上，填充多个凹槽。将第一粘合剂层安装到预底部填充层，并且将凸起的晶片的后表面研磨。第二粘合剂层安装到凸起晶片的背面。第一粘合剂层从凸起的晶片的有效表面剥离，或者第二粘合剂层安装到第一粘合剂层。通过沿着多个槽切割凸起的晶片，将凸起的晶片分成多个段。

7. 发明申请

US20090068933A1 System and Method for Directional Grinding on Backside of a Semiconductor Wafer 有权
标题翻译：用于在半导体晶片背面定向研磨的系统和方法
公开(公告)号：US20090068933A1
公开(公告)日：2009-03-12
申请号：US11852771
申请日：2007-09-10
申请人： SungYoon Lee , JungHoon Shin , BoHan Yoon
发明人： SungYoon Lee , JungHoon Shin , BoHan Yoon
IPC分类号： B24B5/00
CPC分类号： B24B7/228
摘要： A backside grinding apparatus removes semiconductor material from a surface of a semiconductor wafer. The wafer is mounted to a backing plate. The backside surface undergoes a first grinding operation in a rotational motion to remove excess semiconductor material. The semiconductor wafer is then aligned such that edges of the die are oriented along a reference line. The backside surface undergoes a second grinding operation in a linear direction on a 45-diagonal with respect to the reference line to create linear grind marks which are diagonal to the edges of the die. The linear grind marks are formed by an abrasive surface having at least 4000 mesh count. The second grinding operation removes the radial grind marks produced by the first grinding operation. The linear grind marks oriented diagonal with respect to the reference line increases the strength of the die to resist cracking.
摘要翻译：背面研磨装置从半导体晶片的表面去除半导体材料。晶片安装到背板上。后表面在旋转运动中进行第一次研磨操作以除去多余的半导体材料。然后对准半导体晶片，使得管芯的边缘沿着参考线取向。背面在相对于参考线的45对角线上沿线性方向进行第二次研磨操作，以产生与模具的边缘对角的线性研磨标记。线性磨痕由具有至少4000目计数的研磨表面形成。第二磨削操作移除由第一研磨操作产生的径向磨痕。相对于参考线定向的线性磨削标记增加了模具的抗力开裂强度。

8. 发明申请

US20110115070A1 Semiconductor Device and Method of Forming Protective Material Between Semiconductor Die Stacked on Semiconductor Wafer to Reduce Defects During Singulation 有权
标题翻译：半导体器件和在半导体晶片之间堆叠的半导体晶片之间形成保护材料的方法，以减少分裂期间的缺陷
公开(公告)号：US20110115070A1
公开(公告)日：2011-05-19
申请号：US12617877
申请日：2009-11-13
申请人： TaegKi Lim , JaEun Yun , SungYoon Lee
发明人： TaegKi Lim , JaEun Yun , SungYoon Lee
IPC分类号： H01L23/52 , H01L21/78
CPC分类号： H01L21/563 , H01L21/6836 , H01L23/3121 , H01L23/481 , H01L23/49827 , H01L23/49838 , H01L24/13 , H01L24/14 , H01L24/81 , H01L24/94 , H01L24/97 , H01L25/0657 , H01L2221/68359 , H01L2224/13099 , H01L2224/131 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/16225 , H01L2224/16235 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/73203 , H01L2224/73204 , H01L2224/73265 , H01L2224/83102 , H01L2224/92125 , H01L2224/94 , H01L2224/97 , H01L2225/06572 , H01L2924/00011 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01029 , H01L2924/01032 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/10252 , H01L2924/10253 , H01L2924/10272 , H01L2924/10329 , H01L2924/12041 , H01L2924/12042 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/1433 , H01L2924/15311 , H01L2924/181 , H01L2924/18161 , H01L2924/19011 , H01L2924/19041 , H01L2924/19043 , H01L2924/19103 , H01L2924/30105 , H01L2224/81 , H01L2924/00 , H01L2924/00014 , H01L2924/00012 , H01L2224/81805
摘要： A semiconductor wafer contains first semiconductor die. TSVs are formed through the semiconductor wafer. Second semiconductor die are mounted to a first surface of the semiconductor wafer. A first tape is applied to on a second surface of the semiconductor wafer. A protective material is formed over the second die and first surface of the wafer. The protective material can be encapsulant or polyvinyl alcohol and water. The wafer is singulated between the second die into individual die-to-wafer packages each containing the second die stacked on the first die. The protective material protects the wafer during singulation. The die-to-wafer package can be mounted to a substrate. A build-up interconnect structure can be formed over the die-to-wafer package. The protective material can be removed. Underfill material can be deposited beneath the first and second die. An encapsulant is deposited over the die-to-wafer package.
摘要翻译：半导体晶片包含第一半导体管芯。 TSV通过半导体晶片形成。第二半导体管芯安装到半导体晶片的第一表面。将第一带施加到半导体晶片的第二表面上。在第二管芯和晶片的第一表面上形成保护材料。保护材料可以是密封剂或聚乙烯醇和水。将晶片在第二管芯之间分离成各自的管芯到晶片封装，每个封装包含堆叠在第一管芯上的第二管芯。保护材料在切割过程中保护晶片。晶片封装可以安装到基板上。可以在晶片到晶片封装上形成堆积互连结构。可以去除保护材料。底部填充材料可以沉积在第一和第二模具下方。密封剂沉积在晶片到晶片封装上。

9. 发明申请

US20110045637A1 Ultra Thin Bumped Wafer With Under-Film 有权
标题翻译：带薄膜的超薄冲压薄片
公开(公告)号：US20110045637A1
公开(公告)日：2011-02-24
申请号：US12916758
申请日：2010-11-01
申请人： Junghoon Shin , Sangho Lee , Sungyoon Lee
发明人： Junghoon Shin , Sangho Lee , Sungyoon Lee
IPC分类号： H01L21/78 , H01L21/50
CPC分类号： H01L21/78 , H01L2224/16225 , H01L2224/32225 , H01L2224/73104 , H01L2224/73204 , H01L2924/00011 , H01L2924/00014 , H01L2924/00 , H01L2224/0401
摘要： A method of making a semiconductor device includes forming an under-film layer over bumps disposed on a surface of a wafer to completely cover the bumps, and forming an adhesive layer over the under-film layer. The method further includes attaching a support layer over the adhesive layer, removing a portion of a back surface of the wafer, and removing the support layer to expose the adhesive layer that remains disposed over the under-film layer. The method further includes removing the adhesive layer to expose the under-film layer while the bumps remain completely covered by the under-film layer, and singulating the wafer to form a semiconductor die. The method further includes pressing the bumps into contact with a substrate while the under-film layer provides an underfill between the semiconductor die and the substrate.
摘要翻译：制造半导体器件的方法包括在设置在晶片表面上的凸起上形成底膜层，以完全覆盖凸块，并在底膜层上形成粘合剂层。所述方法还包括将粘合剂层附着在粘合剂层上，去除晶片后表面的一部分，以及去除支撑层以暴露保留设置在底膜层上的粘合剂层。该方法还包括去除粘合剂层以暴露底膜层，同时凸块保持完全被底膜层覆盖，并且将晶片单片化以形成半导体管芯。该方法进一步包括按压凸块与基底接触，同时底膜层在半导体管芯和衬底之间提供底部填充。

10. 发明申请

US20080318396A1 Grooving Bumped Wafer Pre-Underfill System 有权
标题翻译：开槽冲压晶片预底霜系统
公开(公告)号：US20080318396A1
公开(公告)日：2008-12-25
申请号：US11766710
申请日：2007-06-21
申请人： Junghoon SHIN , Sungyoon LEE , Taewoo LEE
发明人： Junghoon SHIN , Sungyoon LEE , Taewoo LEE
IPC分类号： H01L21/30
CPC分类号： H01L21/78 , H01L21/561 , H01L21/568 , H01L21/6836 , H01L23/3114 , H01L24/13 , H01L2224/16 , H01L2224/27416 , H01L2224/73104 , H01L2924/00011 , H01L2924/00014 , H01L2924/01079 , H01L2924/14 , H01L2224/0401
摘要： A method of forming a semiconductor device includes providing a bumped wafer. A plurality of grooves is formed in an active surface of the bumped wafer. A pre-underfill layer is disposed over the active surface, filling the plurality of grooves. A first adhesive layer is mounted to the pre-underfill layer, and a back surface of the bumped wafer is ground. A second adhesive layer is mounted to the back surface of the bumped wafer. The first adhesive layer is peeled from the active surface of the bumped wafer, or the second adhesive layer is mounted to the first adhesive layer. The bumped wafer is singulated into a plurality of segments by cutting the bumped wafer along the plurality of grooves.
摘要翻译：形成半导体器件的方法包括提供凸起的晶片。在凸起的晶片的有源表面上形成多个沟槽。预底部填充层设置在活性表面上，填充多个凹槽。将第一粘合剂层安装到预底部填充层，并且将凸起的晶片的后表面研磨。第二粘合剂层安装到凸起晶片的背面。第一粘合剂层从凸起的晶片的有效表面剥离，或者第二粘合剂层安装到第一粘合剂层。通过沿着多个槽切割凸起的晶片，将凸起的晶片分成多个段。

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