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1. 发明申请

US20070056845A1 Multiple zone sputtering target created through conductive and insulation bonding 审中-公开
标题翻译：通过导电和绝缘结合产生多区域溅射靶
公开(公告)号：US20070056845A1
公开(公告)日：2007-03-15
申请号：US11399122
申请日：2006-04-06
申请人： Yan Ye , John White , Akihiro Hosokawa , Hien Le , Elpidio Nisperos , Bradley Stimson
发明人： Yan Ye , John White , Akihiro Hosokawa , Hien Le , Elpidio Nisperos , Bradley Stimson
IPC分类号： C23C14/32 , C23C14/00
CPC分类号： C23C14/3407 , H01J37/3408 , H01J37/3423 , H01J37/3435 , H01J37/3438 , H01J37/3441
摘要： The present invention generally provides a sputtering apparatus and method in which a sputtering target has a plurality of target sections bonded to a common backing plate. Each segment can be bonded to the common backing plate using a different bonding material. One target segment can be bonded to the backing plate using electrically conductive bonding material while another section is bonded to the backing plate using electrically insulating bonding material. Additionally, each different target section can be separately biased.
摘要翻译：本发明通常提供一种溅射装置和方法，其中溅射靶具有多个目标部分结合到共同的背板上。可以使用不同的接合材料将每个段结合到公共背板上。可以使用导电接合材料将一个目标段结合到背板上，而使用电绝缘接合材料将另一部分结合到背板上。此外，每个不同的目标部分可以单独偏置。

2. 发明申请

US20070261951A1 REACTIVE SPUTTERING ZINC OXIDE TRANSPARENT CONDUCTIVE OXIDES ONTO LARGE AREA SUBSTRATES 审中-公开
标题翻译：氧化锌氧化物透明导电氧化物在大面积基材上的反应性溅射
公开(公告)号：US20070261951A1
公开(公告)日：2007-11-15
申请号：US11697476
申请日：2007-04-06
申请人： Yan Ye , Ankur Kadam , Yanping Li , Allen Lau , Makoto Inagawa , Bradley Stimson , Akihiro Hosokawa
发明人： Yan Ye , Ankur Kadam , Yanping Li , Allen Lau , Makoto Inagawa , Bradley Stimson , Akihiro Hosokawa
IPC分类号： C23C14/00
CPC分类号： C23C14/564 , C23C14/0063 , C23C14/35 , H01J37/3244 , H01J37/34 , H01J37/3438
摘要： The present invention generally comprises one or more cooled anodes shadowing one or more gas introduction tubes where both the cooled anodes and the gas introduction tubes span a processing space defined between one or more sputtering targets and one or more substrates within a sputtering chamber. The gas introduction tubes may have gas outlets that direct the gas introduced away from the one or more substrates. The gas introduction tubes may introduce reactive gas, such as oxygen, into the sputtering chamber for depositing TCO films by reactive sputtering. During a multiple step sputtering process, the gas flows (i.e., the amount of gas and the type of gas), the spacing between the target and the substrate, and the DC power may be changed to achieve a desired result.
摘要翻译：本发明通常包括一个或多个冷却的阳极，其遮蔽一个或多个气体导入管，其中冷却的阳极和气体引入管都跨越在溅射室内的一个或多个溅射靶和一个或多个衬底之间限定的处理空间。气体导入管可以具有引导从一个或多个基底引入的气体的气体出口。气体引入管可以将诸如氧的反应性气体引入到用于通过反应溅射沉积TCO膜的溅射室中。在多步骤溅射处理中，可以改变气体流动（即，气体的量和气体的类型），靶和基板之间的间隔以及DC功率以实现期望的结果。

3. 发明申请

US20070235320A1 Reactive sputtering chamber with gas distribution tubes 审中-公开
标题翻译：带气体分配管的反应溅射室
公开(公告)号：US20070235320A1
公开(公告)日：2007-10-11
申请号：US11399233
申请日：2006-04-06
申请人： John White , Yan Ye , Akihiro Hosokawa
发明人： John White , Yan Ye , Akihiro Hosokawa
IPC分类号： C23C14/32 , C23C14/00
CPC分类号： C23C14/0063 , H01J37/3244 , H01J37/32449 , H01J37/34
摘要： A sputtering apparatus for processing large area substrates is provided. By introducing gas across the entire target surface, a uniform composition film may be formed on the substrate. When the gas is introduced merely at the perimeter, the gas distribution is not uniform. By providing a gas introduction tube across the processing area, the reactive gas will uniformly distribute to the whole target. Also, providing the gas tube with multiple inner tubes provides a quick, effective gas dispersion capability.
摘要翻译：提供了一种用于处理大面积基板的溅射装置。通过在整个靶表面上引入气体，可以在衬底上形成均匀的组成膜。当气体仅在周边引入时，气体分布不均匀。通过在处理区域内设置气体导入管，反应气体将均匀地分布到整个靶材上。此外，为气体管提供多个内管提供了快速有效的气体分散能力。

4. 发明申请

US20070056850A1 Large-area magnetron sputtering chamber with individually controlled sputtering zones 审中-公开
标题翻译：具有单独控制溅射区的大面积磁控溅射室
公开(公告)号：US20070056850A1
公开(公告)日：2007-03-15
申请号：US11225922
申请日：2005-09-13
申请人： Yan Ye , John White , Akihiro Hosokawa , Hienminh Le
发明人： Yan Ye , John White , Akihiro Hosokawa , Hienminh Le
IPC分类号： C23C14/00
CPC分类号： C23C14/352 , C23C14/3407
摘要： The present invention generally provides an apparatus for processing a surface of a substrate in a physical vapor deposition (PVD) chamber that has a sputtering target that has separately biasable sections, regions or zones to improve the deposition uniformity. In general, aspects of the present invention can be used for flat panel display processing, semiconductor processing, solar cell processing, or any other substrate processing. In one aspect, each of the target sections of the multizone target assembly are biased at a different cathodic biases by use of one or more DC or RF power sources. In one aspect, each of the target sections of the multizone target assembly are biased at a different cathodic biases by use of one power source and one or more resistive, capacitive and/or inductive elements. In one aspect, the processing chamber contains a multizone target assembly that has one or more ports that are adapted deliver a processing gas to the processing region of the PVD chamber. In one aspect, the processing chamber contains a multizone target assembly that has one or more magnetron assemblies positioned adjacent to one or more of the target sections.
摘要翻译：本发明总体上提供了一种用于处理物理气相沉积（PVD）室中的衬底的表面的设备，其具有具有可分离的偏压部分，区域或区域以提高沉积均匀性的溅射靶。通常，本发明的各方面可用于平板显示处理，半导体处理，太阳能电池处理或任何其它基板处理。在一个方面，通过使用一个或多个DC或RF电源将多区域目标组件的每个目标区段偏置在不同的阴极偏压。在一个方面，通过使用一个电源和一个或多个电阻，电容和/或电感元件，多区域目标组件的每个目标部分被偏置在不同的阴极偏压。在一个方面，处理室包含一个多区域目标组件，其具有适于将处理气体输送到PVD室的处理区域的一个或多个端口。在一个方面，处理室包含一个多区域目标组件，其具有邻近一个或多个目标区段定位的一个或多个磁控管组件。

5. 发明申请

US20070056843A1 Method of processing a substrate using a large-area magnetron sputtering chamber with individually controlled sputtering zones 审中-公开
标题翻译：使用具有单独控制的溅射区域的大面积磁控溅射室来处理衬底的方法
公开(公告)号：US20070056843A1
公开(公告)日：2007-03-15
申请号：US11225923
申请日：2005-09-13
申请人： Yan Ye , John White , Akihiro Hosokawa , Hienminh Le
发明人： Yan Ye , John White , Akihiro Hosokawa , Hienminh Le
IPC分类号： C23C14/32
CPC分类号： C23C14/3407 , C23C14/352
摘要： The present invention generally provides a method for processing a surface of a substrate in a physical vapor deposition (PVD) chamber that has a sputtering target that has separately biasable sections, regions or zones to improve the deposition uniformity. In general, aspects of the present invention can be used for flat panel display processing, semiconductor processing, solar cell processing, or any other substrate processing. In one aspect, each of the target sections of the multizone target assembly are biased at a different cathodic biases by use of one or more DC or RF power sources. In one aspect, each of the target sections of the multizone target assembly are biased at a different cathodic biases by use of one power source and one or more resistive, capacitive and/or inductive elements. In one aspect, the processing chamber contains a multizone target assembly that has one or more ports that are adapted deliver a processing gas to the processing region of the PVD chamber. In one aspect, the processing chamber contains a multizone target assembly that has one or more magnetron assemblies positioned adjacent to one or more of the target sections.
摘要翻译：本发明通常提供了一种用于处理物理气相沉积（PVD）室中的衬底的表面的方法，所述物理气相沉积（PVD）室具有分离的偏压部分，区域或区域以提高沉积均匀性的溅射靶。通常，本发明的各方面可用于平板显示处理，半导体处理，太阳能电池处理或任何其它基板处理。在一个方面，通过使用一个或多个DC或RF电源将多区域目标组件的每个目标区段偏置在不同的阴极偏压。在一个方面，通过使用一个电源和一个或多个电阻，电容和/或电感元件，多区域目标组件的每个目标部分被偏置在不同的阴极偏压。在一个方面，处理室包含一个多区域目标组件，其具有适于将处理气体输送到PVD室的处理区域的一个或多个端口。在一个方面，处理室包含一个多区域目标组件，其具有邻近一个或多个目标区段定位的一个或多个磁控管组件。

6. 发明授权

US08574411B2 Reactive sputtering chamber with gas distribution tubes 有权
标题翻译：带气体分配管的反应溅射室
公开(公告)号：US08574411B2
公开(公告)日：2013-11-05
申请号：US13270058
申请日：2011-10-10
申请人： John M. White , Yan Ye , Akihiro Hosokawa
发明人： John M. White , Yan Ye , Akihiro Hosokawa
IPC分类号： C25B9/00 , C25B11/00 , C25B13/00 , C23C14/00 , C23C16/00 , C23C16/50
CPC分类号： C23C14/0063 , H01J37/3244 , H01J37/32449 , H01J37/34
摘要： A sputtering apparatus for processing large area substrates is provided. By introducing gas across the entire target surface, a uniform composition film may be formed on the substrate. When the gas is introduced merely at the perimeter, the gas distribution is not uniform. By providing a gas introduction tube across the processing area, the reactive gas will uniformly distribute to the whole target. Also, providing the gas tube with multiple inner tubes provides a quick, effective gas dispersion capability.
摘要翻译：提供了一种用于处理大面积基板的溅射装置。通过在整个靶表面上引入气体，可以在衬底上形成均匀的组成膜。当气体仅在周边引入时，气体分布不均匀。通过在处理区域内设置气体导入管，反应气体将均匀地分布到整个靶材上。此外，为气体管提供多个内管提供了快速有效的气体分散能力。

7. 发明申请

US20120000773A1 REACTIVE SPUTTERING ZINC OXIDE TRANSPARENT CONDUCTIVE OXIDES ONTO LARGE AREA SUBSTRATES 审中-公开
标题翻译：氧化锌氧化物透明导电氧化物在大面积基材上的反应性溅射
公开(公告)号：US20120000773A1
公开(公告)日：2012-01-05
申请号：US13231182
申请日：2011-09-13
申请人： Yan Ye , Ankur Kadam , Yanping Li , Allen Ka-Ling Lau , Makoto Inagawa , Bradley O. Stimson , Akihiro Hosokawa
发明人： Yan Ye , Ankur Kadam , Yanping Li , Allen Ka-Ling Lau , Makoto Inagawa , Bradley O. Stimson , Akihiro Hosokawa
IPC分类号： C23C14/34
CPC分类号： C23C14/564 , C23C14/0063 , C23C14/35 , H01J37/3244 , H01J37/34 , H01J37/3438
摘要： The present invention generally comprises one or more cooled anodes shadowing one or more gas introduction tubes where both the cooled anodes and the gas introduction tubes span a processing space defined between one or more sputtering targets and one or more substrates within a sputtering chamber. The gas introduction tubes may have gas outlets that direct the gas introduced away from the one or more substrates. The gas introduction tubes may introduce reactive gas, such as oxygen, into the sputtering chamber for depositing TCO films by reactive sputtering. During a multiple step sputtering process, the gas flows (i.e., the amount of gas and the type of gas), the spacing between the target and the substrate, and the DC power may be changed to achieve a desired result.
摘要翻译：本发明通常包括一个或多个冷却的阳极，其遮蔽一个或多个气体导入管，其中冷却的阳极和气体引入管都跨越在溅射室内的一个或多个溅射靶和一个或多个衬底之间限定的处理空间。气体导入管可以具有引导从一个或多个基底引入的气体的气体出口。气体引入管可以将诸如氧的反应性气体引入到用于通过反应溅射沉积TCO膜的溅射室中。在多步骤溅射处理中，可以改变气体流动（即，气体的量和气体的类型），靶和基板之间的间隔以及DC功率以实现期望的结果。

8. 发明申请

US20120024693A1 REACTIVE SPUTTERING CHAMBER WITH GAS DISTRIBUTION TUBES 有权
标题翻译：具有气体分配管的反应式喷射室
公开(公告)号：US20120024693A1
公开(公告)日：2012-02-02
申请号：US13270058
申请日：2011-10-10
申请人： John M. White , Yan Ye , Akihiro Hosokawa
发明人： John M. White , Yan Ye , Akihiro Hosokawa
IPC分类号： C23C14/24
CPC分类号： C23C14/0063 , H01J37/3244 , H01J37/32449 , H01J37/34
摘要： A sputtering apparatus for processing large area substrates is provided. By introducing gas across the entire target surface, a uniform composition film may be formed on the substrate. When the gas is introduced merely at the perimeter, the gas distribution is not uniform. By providing a gas introduction tube across the processing area, the reactive gas will uniformly distribute to the whole target. Also, providing the gas tube with multiple inner tubes provides a quick, effective gas dispersion capability.
摘要翻译：提供了一种用于处理大面积基板的溅射装置。通过在整个靶表面上引入气体，可以在衬底上形成均匀的组成膜。当气体仅在周边引入时，气体分布不均匀。通过在处理区域内设置气体导入管，反应气体将均匀地分布到整个靶材上。此外，为气体管提供多个内管提供了快速有效的气体分散能力。

9. 发明申请

US20070205101A1 Thermally conductive dielectric bonding of sputtering targets using diamond powder filler or thermally conductive ceramic fillers 失效
标题翻译：使用金刚石粉末填料或导热陶瓷填料的溅射靶的导热介电键合
公开(公告)号：US20070205101A1
公开(公告)日：2007-09-06
申请号：US11368000
申请日：2006-03-03
申请人： Yan Ye , John White
发明人： Yan Ye , John White
IPC分类号： C23C14/00
CPC分类号： C23C14/3407 , C23C14/35 , C23C14/352 , H01J37/3414 , H01J37/3435 , Y10T156/109
摘要： A sputtering target assembly and method for bonding a sputtering target to a backing plate is disclosed. When insulatively bonding a sputtering target to a backing plate, it is necessary to ensure that the bonding material has good thermal conductivity so that the temperature of the target can be effectively controlled. It is also important to not have electrical conductivity through the bonding materials. In order to achieve both goals, it is beneficial to utilize an elastomer with diamond powder filler. Diamond power has very good thermal conductivity, and it also has very good dielectric strength. Diamond is a thermally effective and cost effective substitute for silver in insulative bonding.
摘要翻译：公开了一种用于将溅射靶结合到背板的溅射靶组件和方法。当将溅射靶绝缘接合到背板时，需要确保接合材料具有良好的导热性，从而可以有效地控制靶的温度。通过接合材料不具有导电性也是重要的。为了实现这两个目标，使用具有金刚石粉末填料的弹性体是有益的。金刚石功率具有非常好的导热性，并且也具有非常好的介电强度。金刚石是绝缘粘合中银的热效应和成本效益的替代品。

10. 发明申请

US20070065571A1 Method and apparatus for manufacturing a pixel matrix of a color filter for a flat panel display 审中-公开
标题翻译：用于制造用于平板显示器的滤色器的像素矩阵的方法和装置
公开(公告)号：US20070065571A1
公开(公告)日：2007-03-22
申请号：US11521577
申请日：2006-09-13
申请人： John White , Quanyuan Shang , Yan Ye , Ligui Zhou
发明人： John White , Quanyuan Shang , Yan Ye , Ligui Zhou
IPC分类号： B05D5/12 , B05D7/00 , C08J7/18 , B05D5/06 , B05D1/36 , B05B5/025 , C23C16/00 , B05D3/00
CPC分类号： G02B5/201 , B23K26/066 , B23K26/389 , G02F1/1303 , G02F1/133377 , H01L27/322
摘要： Apparatus and methods are provided for forming a pixel matrix. The methods include coating a substrate with a pixel matrix material, coating the pixel matrix material with an ink-phobic material, and forming pixel wells in the pixel matrix material and the ink-phobic material. A system for forming a pixel matrix is provided that includes a patterning tool including a laser ablation system operable to form pixel wells in pixel matrix material coated with ink-phobic material. The laser ablation system is operable to form pixel wells in pixel matrix material coated with ink-phobic material in an oxygenated environment so that the sidewalls of the pixel matrix are made to be ink-philic. The invention also includes a pixel well structure in which the top surfaces of the pixel well is ink-phobic and the surfaces of the sidewalls are ink-philic. Numerous other aspects are provided.
摘要翻译：提供了用于形成像素矩阵的装置和方法。所述方法包括用像素矩阵材料涂覆衬底，用疏墨材料涂覆像素矩阵材料，以及在像素基质材料和墨迹材料中形成像素阱。提供了一种用于形成像素矩阵的系统，其包括图案化工具，其包括可操作以在涂覆有墨迹材料的像素矩阵材料中形成像素阱的激光烧蚀系统。激光烧蚀系统可操作以在氧化环境中形成涂覆有墨迹的材料的像素矩阵材料中形成像素阱，使得像素矩阵的侧壁被制成亲墨水。本发明还包括像素阱结构，其中像素阱的顶表面是墨水的，并且侧壁的表面是亲墨水的。提供了许多其他方面。

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