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    • 2. 发明申请
    • PHOTOVOLTAIC CONTACT AND WIRING FORMATION
    • 光伏接触和接线形成
    • US20070148336A1
    • 2007-06-28
    • US11556776
    • 2006-11-06
    • Robert BachrachQuanyuan ShangYan Ye
    • Robert BachrachQuanyuan ShangYan Ye
    • B05D5/12H05K3/00C23C16/00
    • C23C14/35C23C14/564H01L31/022425H01L31/18H05K3/048Y02E10/50
    • A method and apparatus for fabricating a solar cell and forming metal contact is disclosed. Solar cell contact and wiring is formed by depositing a thin film stack of a first metal material and a second metal material as an initiation layer or seed layer for depositing a bulk metal layer in conjunction with additional sheet processing, photolithography, etching, cleaning, and annealing processes. In one embodiment, the thin film stack for forming metal silicide with reduced contact resistance over the sheet is deposited by sputtering or physical vapor deposition. In another embodiment, the bulk metal layer for forming metal lines and wiring is deposited by sputtering or physical vapor deposition. In an alternative embodiment, electroplating or electroless deposition is used to deposit the bulk metal layer.
    • 公开了一种用于制造太阳能电池和形成金属接触的方法和装置。 通过沉积第一金属材料和第二金属材料的薄膜堆叠来形成太阳能电池接触和布线,所述第一金属材料和第二金属材料作为起始层或籽晶层,用于结合额外的片材处理,光刻,蚀刻,清洁和 退火工艺。 在一个实施例中,通过溅射或物理气相沉积沉积用于形成具有降低的片上接触电阻的金属硅化物的薄膜叠层。 在另一个实施例中,通过溅射或物理气相沉积沉积用于形成金属线和布线的体金属层。 在替代实施例中,使用电镀或无电沉积来沉积体金属层。
    • 6. 发明申请
    • Large-area magnetron sputtering chamber with individually controlled sputtering zones
    • 具有单独控制溅射区的大面积磁控溅射室
    • US20070056850A1
    • 2007-03-15
    • US11225922
    • 2005-09-13
    • Yan YeJohn WhiteAkihiro HosokawaHienminh Le
    • Yan YeJohn WhiteAkihiro HosokawaHienminh Le
    • C23C14/00
    • C23C14/352C23C14/3407
    • The present invention generally provides an apparatus for processing a surface of a substrate in a physical vapor deposition (PVD) chamber that has a sputtering target that has separately biasable sections, regions or zones to improve the deposition uniformity. In general, aspects of the present invention can be used for flat panel display processing, semiconductor processing, solar cell processing, or any other substrate processing. In one aspect, each of the target sections of the multizone target assembly are biased at a different cathodic biases by use of one or more DC or RF power sources. In one aspect, each of the target sections of the multizone target assembly are biased at a different cathodic biases by use of one power source and one or more resistive, capacitive and/or inductive elements. In one aspect, the processing chamber contains a multizone target assembly that has one or more ports that are adapted deliver a processing gas to the processing region of the PVD chamber. In one aspect, the processing chamber contains a multizone target assembly that has one or more magnetron assemblies positioned adjacent to one or more of the target sections.
    • 本发明总体上提供了一种用于处理物理气相沉积(PVD)室中的衬底的表面的设备,其具有具有可分离的偏压部分,区域或区域以提高沉积均匀性的溅射靶。 通常,本发明的各方面可用于平板显示处理,半导体处理,太阳能电池处理或任何其它基板处理。 在一个方面,通过使用一个或多个DC或RF电源将多区域目标组件的每个目标区段偏置在不同的阴极偏压。 在一个方面,通过使用一个电源和一个或多个电阻,电容和/或电感元件,多区域目标组件的每个目标部分被偏置在不同的阴极偏压。 在一个方面,处理室包含一个多区域目标组件,其具有适于将处理气体输送到PVD室的处理区域的一个或多个端口。 在一个方面,处理室包含一个多区域目标组件,其具有邻近一个或多个目标区段定位的一个或多个磁控管组件。
    • 7. 发明申请
    • Method of processing a substrate using a large-area magnetron sputtering chamber with individually controlled sputtering zones
    • 使用具有单独控制的溅射区域的大面积磁控溅射室来处理衬底的方法
    • US20070056843A1
    • 2007-03-15
    • US11225923
    • 2005-09-13
    • Yan YeJohn WhiteAkihiro HosokawaHienminh Le
    • Yan YeJohn WhiteAkihiro HosokawaHienminh Le
    • C23C14/32
    • C23C14/3407C23C14/352
    • The present invention generally provides a method for processing a surface of a substrate in a physical vapor deposition (PVD) chamber that has a sputtering target that has separately biasable sections, regions or zones to improve the deposition uniformity. In general, aspects of the present invention can be used for flat panel display processing, semiconductor processing, solar cell processing, or any other substrate processing. In one aspect, each of the target sections of the multizone target assembly are biased at a different cathodic biases by use of one or more DC or RF power sources. In one aspect, each of the target sections of the multizone target assembly are biased at a different cathodic biases by use of one power source and one or more resistive, capacitive and/or inductive elements. In one aspect, the processing chamber contains a multizone target assembly that has one or more ports that are adapted deliver a processing gas to the processing region of the PVD chamber. In one aspect, the processing chamber contains a multizone target assembly that has one or more magnetron assemblies positioned adjacent to one or more of the target sections.
    • 本发明通常提供了一种用于处理物理气相沉积(PVD)室中的衬底的表面的方法,所述物理气相沉积(PVD)室具有分离的偏压部分,区域或区域以提高沉积均匀性的溅射靶。 通常,本发明的各方面可用于平板显示处理,半导体处理,太阳能电池处理或任何其它基板处理。 在一个方面,通过使用一个或多个DC或RF电源将多区域目标组件的每个目标区段偏置在不同的阴极偏压。 在一个方面,通过使用一个电源和一个或多个电阻,电容和/或电感元件,多区域目标组件的每个目标部分被偏置在不同的阴极偏压。 在一个方面,处理室包含一个多区域目标组件,其具有适于将处理气体输送到PVD室的处理区域的一个或多个端口。 在一个方面,处理室包含一个多区域目标组件,其具有邻近一个或多个目标区段定位的一个或多个磁控管组件。