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1. 发明授权

US08772162B2 Method for removing native oxide and associated residue from a substrate 有权
标题翻译：从底物中除去天然氧化物和相关残留物的方法
公开(公告)号：US08772162B2
公开(公告)日：2014-07-08
申请号：US13906543
申请日：2013-05-31
申请人： Bo Zheng , Arvind Sundarrajan , Xinyu Fu
发明人： Bo Zheng , Arvind Sundarrajan , Xinyu Fu
IPC分类号： H01L21/44
CPC分类号： H01L21/02063 , H01J37/32082 , H01L21/02057 , H01L21/0206 , H01L21/28518 , H01L21/28556 , H01L21/28568 , H01L21/743 , H01L21/768
摘要： Native oxides and associated residue are removed from surfaces of a substrate by sequentially performing two plasma cleaning processes on the substrate in a single processing chamber. The first plasma cleaning process removes native oxide formed on a substrate surface by generating a cleaning plasma from a mixture of ammonia (NH3) and nitrogen trifluoride (NF3) gases, condensing products of the cleaning plasma on the native oxide to form a thin film that contains ammonium hexafluorosilicate ((NH4)2SiF6), and subliming the thin film off of the substrate surface. The second plasma cleaning process removes remaining residues of the thin film by generating a second cleaning plasma from nitrogen trifluoride gas. Products of the second cleaning plasma react with a few angstroms of the bare silicon present on the surface, forming silicon tetrafluoride (SiF4) and lifting off residues of the thin film.
摘要翻译：通过在单个处理室中在衬底上依次执行两个等离子体清洗工艺，从衬底的表面除去天然氧化物和相关残留物。第一等离子体清洁工艺通过从氨（NH 3）和三氟化氮（NF 3）气体的混合物中产生清洁等离子体，从而将清洁等离子体的产物冷凝在天然氧化物上，从而去除在基底表面上形成的天然氧化物，形成薄膜，含有六氟硅酸铵（（NH 4）2 SiF 6），并将薄膜从衬底表面上升华。通过从三氟化氮气体产生第二清洗等离子体，第二等离子体清洗工艺去除剩余的薄膜残留物。第二清洗等离子体的产物与表面上存在的裸硅几埃反应，形成四氟化硅（SiF4）并提取薄膜的残留物。

2. 发明授权

US07807568B2 Methods for reducing damage to substrate layers in deposition processes 失效
标题翻译：减少沉积过程中底物损伤的方法
公开(公告)号：US07807568B2
公开(公告)日：2010-10-05
申请号：US12257143
申请日：2008-10-23
申请人： Xinyu Fu , Arvind Sundarrajan
发明人： Xinyu Fu , Arvind Sundarrajan
IPC分类号： H01L21/4763
CPC分类号： H01L21/76873 , H01L21/2855 , H01L21/76846 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： Methods of processing a substrate are provided herein. In some embodiments, a method of processing a substrate may include providing a substrate to a process chamber comprising a dielectric layer having a feature formed therein. A barrier layer may be formed within the feature. A coating of a first conductive material may be formed atop the barrier layer. A seed layer of the first conductive material may be formed atop the coating. The feature may be filled with a second conductive material. In some embodiments, the seed layer may be formed while maintaining the substrate at a temperature of greater than about 40 degrees Celsius.
摘要翻译：本文提供了处理基板的方法。在一些实施例中，处理衬底的方法可以包括向包括其中形成有特征的电介质层的处理室提供衬底。可以在特征内形成阻挡层。可以在阻挡层顶上形成第一导电材料的涂层。第一导电材料的籽晶层可以形成在涂层顶上。该特征可以用第二导电材料填充。在一些实施例中，种子层可以在保持基底的温度高于约40摄氏度的同时形成。

3. 发明授权

US07686926B2 Multi-step process for forming a metal barrier in a sputter reactor 有权
标题翻译：在溅射反应器中形成金属阻挡层的多步法
公开(公告)号：US07686926B2
公开(公告)日：2010-03-30
申请号：US11119350
申请日：2005-04-29
申请人： Tza-Jing Gung , Xinyu Fu , Arvind Sundarrajan , Edward P. Hammond, IV , Praburam Gopalraja , John C. Forster , Mark A. Perrin , Andrew S. Gillard
发明人： Tza-Jing Gung , Xinyu Fu , Arvind Sundarrajan , Edward P. Hammond, IV , Praburam Gopalraja , John C. Forster , Mark A. Perrin , Andrew S. Gillard
IPC分类号： C23C14/00
CPC分类号： H01J37/3266 , C23C14/046 , C23C14/0641 , C23C14/165 , C23C14/358 , C23F4/00 , H01J37/321 , H01J37/32623 , H01J37/32688 , H01J37/3408 , H01L21/2855 , H01L21/76844 , H01L21/76846 , H01L21/76865
摘要： A multi-step process performed in a plasma sputter chamber including sputter deposition from the target and argon sputter etching of the substrate. The chamber includes a quadruple electromagnetic coil array coaxially arranged in a rectangular array about a chamber axis outside the sidewalls of a plasma sputter reactor in back of an RF coil within the chamber. The coil currents can be separately controlled to produce different magnetic field distributions, for example, between a sputter deposition mode in which the sputter target is powered to sputter target material onto a wafer and a sputter etch mode in which the RF coil supports the argon sputtering plasma. A TaN/Ta barrier is first sputter deposited with high target power and wafer bias. Argon etching is performed with even higher wafer bias. A flash step is applied with reduced target power and wafer bias.
摘要翻译：在等离子体溅射室中执行的包括从靶的溅射沉积和对衬底的氩溅射蚀刻的多步骤过程。该腔室包括一个四重电磁线圈阵列，该四极电磁线圈阵列围绕室内RF射频线圈背面的等离子体溅射反应器的侧壁外的腔室轴线同轴地布置。可以单独控制线圈电流以产生不同的磁场分布，例如在其中溅射靶被驱动以将靶材料溅射到晶片上的溅射沉积模式和其中RF线圈支撑氩溅射的溅射蚀刻模式之间等离子体。首先以高目标功率和晶片偏置溅射沉积TaN / Ta势垒。以更高的晶片偏压进行氩蚀刻。应用闪光步骤，降低目标功率和晶片偏置。

4. 发明申请

US20050263390A1 Multi-step process for forming a metal barrier in a sputter reactor 有权
标题翻译：在溅射反应器中形成金属阻挡层的多步法
公开(公告)号：US20050263390A1
公开(公告)日：2005-12-01
申请号：US11119350
申请日：2005-04-29
申请人： Tza-Jing Gung , Xinyu Fu , Arvind Sundarrajan , Edward Hammond , Praburam Gopalraja , John Forster , Mark Perrin , Andrew Gillard
发明人： Tza-Jing Gung , Xinyu Fu , Arvind Sundarrajan , Edward Hammond , Praburam Gopalraja , John Forster , Mark Perrin , Andrew Gillard
IPC分类号： C23C14/04 , C23C14/06 , C23C14/16 , C23C14/32 , C23C14/35 , C23C16/00 , C23F1/02 , C23F4/00 , H01J37/32 , H01J37/34 , H01L21/285 , H01L21/768
CPC分类号： H01J37/3266 , C23C14/046 , C23C14/0641 , C23C14/165 , C23C14/358 , C23F4/00 , H01J37/321 , H01J37/32623 , H01J37/32688 , H01J37/3408 , H01L21/2855 , H01L21/76844 , H01L21/76846 , H01L21/76865
摘要： A multi-step process performed in a plasma sputter chamber including sputter deposition from the target and argon sputter etching of the substrate. The chamber includes a quadruple electromagnetic coil array coaxially arranged in a rectangular array about a chamber axis outside the sidewalls of a plasma sputter reactor in back of an RF coil within the chamber. The coil currents can be separately controlled to produce different magnetic field distributions, for example, between a sputter deposition mode in which the sputter target is powered to sputter target material onto a wafer and a sputter etch mode in which the RF coil supports the argon sputtering plasma. A TaN/Ta barrier is first sputter deposited with high target power and wafer bias. Argon etching is performed with even higher wafer bias. A flash step is applied with reduced target power and wafer bias.
摘要翻译：在等离子体溅射室中执行的包括从靶的溅射沉积和对衬底的氩溅射蚀刻的多步骤过程。该腔室包括一个四重电磁线圈阵列，该四极电磁线圈阵列围绕室内RF射频线圈背面的等离子体溅射反应器的侧壁外的腔室轴线同轴地布置。可以单独控制线圈电流以产生不同的磁场分布，例如在其中溅射靶被驱动以将靶材料溅射到晶片上的溅射沉积模式和其中RF线圈支撑氩溅射的溅射蚀刻模式之间等离子体。首先以高目标功率和晶片偏置溅射沉积TaN / Ta势垒。以更高的晶片偏压进行氩蚀刻。应用闪光步骤，降低目标功率和晶片偏置。

5. 发明授权

US08871064B2 Electromagnet array in a sputter reactor 有权
标题翻译：溅射反应器中的电磁体阵列
公开(公告)号：US08871064B2
公开(公告)日：2014-10-28
申请号：US12695643
申请日：2010-01-28
申请人： Tza-Jing Gung , Xinyu Fu , Arvind Sundarrajan , Edward P. Hammond, IV , Praburam Gopalraja , John C. Forster , Mark A. Perrin , Andrew S. Gillard
发明人： Tza-Jing Gung , Xinyu Fu , Arvind Sundarrajan , Edward P. Hammond, IV , Praburam Gopalraja , John C. Forster , Mark A. Perrin , Andrew S. Gillard
IPC分类号： C23C14/34 , H01J37/32 , C23C14/35 , C23C14/04 , H01L21/768 , H01J37/34 , C23C14/16 , H01L21/285 , C23F4/00 , C23C14/06
CPC分类号： H01J37/3266 , C23C14/046 , C23C14/0641 , C23C14/165 , C23C14/358 , C23F4/00 , H01J37/321 , H01J37/32623 , H01J37/32688 , H01J37/3408 , H01L21/2855 , H01L21/76844 , H01L21/76846 , H01L21/76865
摘要： A multi-step process performed in a plasma sputter chamber including sputter deposition from the target and argon sputter etching of the substrate. The chamber includes a quadruple electromagnetic coil array coaxially arranged in a rectangular array about a chamber axis outside the sidewalls of a plasma sputter reactor in back of an RF coil within the chamber. The coil currents can be separately controlled to produce different magnetic field distributions, for example, between a sputter deposition mode in which the sputter target is powered to sputter target material onto a wafer and a sputter etch mode in which the RF coil supports the argon sputtering plasma. A TaN/Ta barrier is first sputter deposited with high target power and wafer bias. Argon etching is performed with even higher wafer bias. A flash step is applied with reduced target power and wafer bias.
摘要翻译：在等离子体溅射室中执行的包括从靶的溅射沉积和对衬底的氩溅射蚀刻的多步骤过程。该腔室包括一个四重电磁线圈阵列，该四极电磁线圈阵列围绕室内RF射频线圈背面的等离子体溅射反应器的侧壁外的腔室轴线同轴地布置。可以单独控制线圈电流以产生不同的磁场分布，例如在其中溅射靶被驱动以将靶材料溅射到晶片上的溅射沉积模式和其中RF线圈支撑氩溅射的溅射蚀刻模式之间等离子体。首先以高目标功率和晶片偏置溅射沉积TaN / Ta势垒。以更高的晶片偏压进行氩蚀刻。应用闪光步骤，降低目标功率和晶片偏置。

6. 发明授权

US08455352B1 Method for removing native oxide and associated residue from a substrate 失效
公开(公告)号：US08455352B1
公开(公告)日：2013-06-04
申请号：US13480091
申请日：2012-05-24
申请人： Bo Zheng , Arvind Sundarrajan , Xinyu Fu
发明人： Bo Zheng , Arvind Sundarrajan , Xinyu Fu
IPC分类号： H01L21/44
CPC分类号： H01L21/02063 , H01J37/32082 , H01L21/02057 , H01L21/0206 , H01L21/28518 , H01L21/28556 , H01L21/28568 , H01L21/743 , H01L21/768
摘要： Native oxides and associated residue are removed from surfaces of a substrate by sequentially performing two plasma cleaning processes on the substrate in a single processing chamber. The first plasma cleaning process removes native oxide formed on a substrate surface by generating a cleaning plasma from a mixture of ammonia (NH3) and nitrogen trifluoride (NF3) gases, condensing products of the cleaning plasma on the native oxide to form a thin film that contains ammonium hexafluorosilicate ((NH4)2SiF6), and subliming the thin film off of the substrate surface. The second plasma cleaning process removes remaining residues of the thin film by generating a second cleaning plasma from nitrogen trifluoride gas. Products of the second cleaning plasma react with a few angstroms of the bare silicon present on the surface, forming silicon tetrafluoride (SiF4) and lifting off residues of the thin film.

7. 发明申请

US20080190760A1 RESPUTTERED COPPER SEED LAYER 审中-公开
标题翻译：受影响的铜层
公开(公告)号：US20080190760A1
公开(公告)日：2008-08-14
申请号：US11838796
申请日：2007-08-14
申请人： XIANMIN TANG , Arvind Sundarrajan , Daniel Lubben , Qian Luo , Tza-Jing Gung , Anantha Subramani , Hua Chung , Xinyu Fu , Rongjun Wang , Yong Cao , Jick Yu , John Forster , Praburam Gopalraja
发明人： XIANMIN TANG , Arvind Sundarrajan , Daniel Lubben , Qian Luo , Tza-Jing Gung , Anantha Subramani , Hua Chung , Xinyu Fu , Rongjun Wang , Yong Cao , Jick Yu , John Forster , Praburam Gopalraja
IPC分类号： C23C14/32
CPC分类号： C23C14/165 , C23C14/046 , C23C14/358 , C23C14/5826 , C23C14/584 , H01J37/3408 , H01J37/3455 , H01L21/2855 , H01L21/76865 , H01L21/76873 , H01L21/76877
摘要： An integrated copper deposition process, particularly useful for forming a copper seed layer in a narrow via prior to electrochemical plating of copper, including at least one cycle of sputter deposition of copper followed by sputter etching of the deposited copper, preferably performed in a same sputter chamber. The deposition is performed under conditions promoting high copper ionization fractions and strong wafer biasing to draw the copper ions into the via. The etching may be done with argon ions, preferably inductively excited by an RF coil around the chamber, or by copper ions, which may be formed with high target power and intense magnetron or by use of the RF coil. Two or more cycles of deposition/etch may be performed. A final flash deposition may be performed with high copper ionization and low wafer biasing.
摘要翻译：一种集成的铜沉积工艺，特别适用于在铜的电化学电镀之前在窄通孔中形成铜籽晶层，包括至少一个铜的溅射沉积循环，然后溅射蚀刻沉积的铜，优选在相同的溅射房间。沉积在促进高铜离子化分数和强晶片偏置的条件下进行以将铜离子吸入通孔。蚀刻可以用氩离子进行，优选地通过围绕室的RF线圈进行感应激励，或者通过可以用高目标功率和强磁控管形成的铜离子或通过使用RF线圈进行。可以执行两个或更多个沉积/蚀刻循环。最终的闪蒸沉积可以用高铜离子化和低晶片偏压进行。

8. 发明申请

US20120121799A1 Method For Segregating The Alloying Elements And Reducing The Residue Resistivity Of Copper Alloy Layers 有权
标题翻译：分离合金元素并降低铜合金层残留电阻率的方法
公开(公告)号：US20120121799A1
公开(公告)日：2012-05-17
申请号：US12945445
申请日：2010-11-12
申请人： Xinyu Fu , Jick M. Yu
发明人： Xinyu Fu , Jick M. Yu
IPC分类号： H05K3/22
CPC分类号： H01L23/53233 , H01L21/76831 , H01L21/76843 , H01L21/76849 , H01L21/76855 , H01L21/76867 , H01L21/76877 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： Methods for forming interconnect or interconnections on a substrate for use in a microelectric device are disclosed. In one or more embodiments, the method includes depositing an alloy layer comprising Cu and an alloying element, for, example, Mn, in a dielectric layer and segregating or diffusing the alloying element from the bulk Cu portion of the alloy layer. In one or more embodiments, the method includes annealing the alloy layer in an atomic hydrogen atmosphere. After annealing, the alloy layer exhibits a resistivity that is substantially equivalent to the resistivity of a pure Cu layer.
摘要翻译：公开了在用于微电子器件的衬底上形成互连或互连的方法。在一个或多个实施例中，该方法包括在电介质层中沉积包含Cu和合金元素（例如Mn）的合金层，并将合金元素与合金层的本体Cu部分分离或扩散。在一个或多个实施例中，该方法包括在原子氢气氛中退火合金层。退火后，合金层的电阻率基本上等于纯Cu层的电阻率。

9. 发明授权

US07704887B2 Remote plasma pre-clean with low hydrogen pressure 有权
标题翻译：远程等离子体预清洁，氢气压力低
公开(公告)号：US07704887B2
公开(公告)日：2010-04-27
申请号：US11334803
申请日：2006-01-17
申请人： Xinyu Fu , John Forster , Jick Yu , Ajay Bhatnagar , Praburam Gopalraja
发明人： Xinyu Fu , John Forster , Jick Yu , Ajay Bhatnagar , Praburam Gopalraja
IPC分类号： B08B3/00 , H01L21/302
CPC分类号： H01L21/02063 , G03F7/427 , H01J37/32357 , H01J37/32422 , H01J37/3266 , H01L21/02068 , H01L21/67028 , H01L21/67069 , H01L21/76814
摘要： A plasma cleaning method particularly useful for removing photoresist and oxide residue from a porous low-k dielectric with a high carbon content prior to sputter deposition. A remote plasma source produces a plasma primarily of hydrogen radicals. The hydrogen pressure may be kept relatively low, for example, at 30 milliTorr. Optionally, helium may be added to the processing gas with the hydrogen partial pressure held below 150 milliTorr. Superior results are obtained with 70% helium in 400 milliTorr of hydrogen and helium. Preferably, an ion filter, such as a magnetic filter, removes hydrogen and other ions from the output of the remote plasma source and a supply tube from the remote plasma source includes a removable dielectric liner in combination with dielectric showerhead and manifold liner.
摘要翻译：一种等离子体清洗方法，特别适用于在溅射沉积之前从具有高碳含量的多孔低k电介质中除去光致抗蚀剂和氧化物残留物。远程等离子体源产生主要为氢自由基的等离子体。氢气压力可以保持相对较低，例如在30毫乇。任选地，氦气可以被加到处理气体中，氢分压保持在150毫乇以下。在400毫乇的氢气和氦气中，70％的氦气可获得卓越的结果。优选地，诸如磁性过滤器的离子过滤器从远程等离子体源的输出中除去氢和其它离子，并且来自远程等离子体源的供应管包括与介电喷头和歧管衬套组合的可移除绝缘衬垫。

10. 发明授权

US07658802B2 Apparatus and a method for cleaning a dielectric film 有权
标题翻译：用于清洁电介质膜的装置和方法
公开(公告)号：US07658802B2
公开(公告)日：2010-02-09
申请号：US11284775
申请日：2005-11-22
申请人： Xinyu Fu , John Forster , Wei W. Wang
发明人： Xinyu Fu , John Forster , Wei W. Wang
IPC分类号： B08B6/00
CPC分类号： H01L21/02063 , H01J37/32357 , H01J37/32422 , H01J37/3266
摘要： An apparatus and a method of cleaning a dielectric film are provided in the present invention. In one embodiment, an apparatus of cleaning a dielectric film the apparatus includes a chamber body adapted to support a substrate therein, a remote plasma source adapted to provide a plurality of reactive radicals to the chamber body, a passage coupling the remote plasma source to the chamber body, and at least one magnet disposed adjacent the passage. In another embodiment, a method of cleaning a dielectric film that includes providing a substrate having an at least partially exposed dielectric layer disposed in a process chamber, generating a plurality of reactive radicals in a remote plasma source, flowing the reactive radicals from the remote plasma source into the process chamber through a passage having at least one magnet disposed adjacent the passage, and magnetically filtering the reactive radicals passing through the passage.
摘要翻译：在本发明中提供了一种清洁电介质膜的装置和方法。在一个实施例中，一种清洁电介质膜的装置包括适于在其中支撑衬底的室主体，适于向室主体提供多个反应性基团的远程等离子体源，将远程等离子体源耦合到室主体，以及邻近通道设置的至少一个磁体。在另一个实施例中，一种清洁电介质膜的方法，该方法包括提供具有设置在处理室中的至少部分暴露的电介质层的衬底，在远程等离子体源中产生多个反应性基团，使来自远端等离子体的反应性基团通过具有邻近通道设置的至少一个磁体的通道进入处理室，并对穿过通道的反应性基团进行磁过滤。

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