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1. 发明授权

US09202480B2 Double patterning hard mask for damascene perpendicular magnetic recording (PMR) writer 有权
标题翻译：用于大马士革垂直磁记录（PMR）作者的双重图案化硬掩模
公开(公告)号：US09202480B2
公开(公告)日：2015-12-01
申请号：US12579316
申请日：2009-10-14
申请人： Xiaohai Xiang , Yun-Fei Li , Jinqiu Zhang , Hongping Yuan , Xianzhong Zeng , Hai Sun
发明人： Xiaohai Xiang , Yun-Fei Li , Jinqiu Zhang , Hongping Yuan , Xianzhong Zeng , Hai Sun
IPC分类号： B44C1/22 , C03C15/00 , H01L21/4763 , G11B5/31 , G11B5/127
CPC分类号： G11B5/3116 , G11B5/1278 , G11B5/3163 , Y10T428/11
摘要： Various embodiments of the subject disclosure provide a double patterning process that uses two patterning steps to produce a write structure having a nose shape with sharp corners. In one embodiment, a method for forming a write structure on a multi-layer structure comprising a substrate and an insulator layer on the substrate is provided. The method comprises forming a hard mask layer over the insulator layer, performing a first patterning process to form a pole and yoke opening in the hard mask layer, performing a second patterning process to remove rounded corners of the pole and yoke opening in the hard mask layer, removing a portion of the insulator layer corresponding to the pole and yoke opening in the hard mask layer to form a trench in the insulator layer, and filling the trench with a magnetic material.
摘要翻译：本发明公开的各种实施例提供一种双重图案化工艺，其使用两个图案化步骤来产生具有尖角的鼻子形状的写入结构。在一个实施例中，提供了一种用于在包括衬底和衬底上的绝缘体层的多层结构上形成写结构的方法。该方法包括在绝缘体层上形成硬掩模层，执行第一图案化工艺以在硬掩模层中形成极和轭开口，执行第二图案化处理以去除硬掩模中的极和轭开口的圆角去除与硬掩模层中的极和轭开口相对应的绝缘体层的一部分，以在绝缘体层中形成沟槽，并用磁性材料填充沟槽。

2. 发明授权

US07846643B1 Method and system for providing a structure in a microelectronic device using a chromeless alternating phase shift mask 有权
标题翻译：在使用无铬交替相移掩模的微电子器件中提供结构的方法和系统
公开(公告)号：US07846643B1
公开(公告)日：2010-12-07
申请号：US11934599
申请日：2007-11-02
申请人： Hai Sun , Winnie Yu , Hongping Yuan , Yizhong Wang , Xianzhong Zeng
发明人： Hai Sun , Winnie Yu , Hongping Yuan , Yizhong Wang , Xianzhong Zeng
IPC分类号： G03F1/00
CPC分类号： G11B5/3906 , B82Y25/00 , G01R33/093 , G03F1/30 , G03F1/34
摘要： A method and system for providing a microelectric device, such as a magnetoresistive read sensor are described. The method and system include providing a mask layer on the microelectric device. The method and system further include exposing the mask layer to provide a mask. A portion of the mask covers a portion of the microelectric device. The step of exposing the mask layer further includes utilizing a chromeless alt-phase shift mask for providing the portion of the mask.
摘要翻译：描述了一种用于提供诸如磁阻读取传感器的微电子装置的方法和系统。该方法和系统包括在微电子器件上提供掩模层。该方法和系统还包括曝光掩模层以提供掩模。掩模的一部分覆盖微电子器件的一部分。暴露掩模层的步骤进一步包括利用无铬替代相位掩模来提供掩模的该部分。

3. 发明授权

US08394280B1 Resist pattern protection technique for double patterning application 有权
标题翻译：用于双重图案化应用的抗蚀图案保护技术
公开(公告)号：US08394280B1
公开(公告)日：2013-03-12
申请号：US12614210
申请日：2009-11-06
申请人： Dujiang Wan , Hai Sun , Hongping Yuan , Ling Wang , Xianzhong Zeng
发明人： Dujiang Wan , Hai Sun , Hongping Yuan , Ling Wang , Xianzhong Zeng
IPC分类号： B44C1/22
CPC分类号： G11B5/3163 , G11B5/1278 , H01L21/0273 , H01L21/0332 , H01L21/0337
摘要： Methods of patterning a material are disclosed. A first resist pattern is formed on a field. A protective layer is formed over the first resist pattern and at least a portion of the field. A second resist pattern is formed over a portion of the protective layer. A portion of a material to be patterned deposited adjacent to the first and second resist patterns is removed.
摘要翻译：公开了图案化材料的方法。在场上形成第一抗蚀剂图案。在第一抗蚀剂图案和场的至少一部分上形成保护层。在保护层的一部分上形成第二抗蚀剂图案。除去与第一和第二抗蚀剂图案相邻的被图案化沉积的材料的一部分。

4. 发明授权

US08169473B1 Method and system for exposing a photoresist in a magnetic device 有权
标题翻译：用于在磁性装置中曝光光致抗蚀剂的方法和系统
公开(公告)号：US08169473B1
公开(公告)日：2012-05-01
申请号：US12056494
申请日：2008-03-27
申请人： Winnie Yu , Hai Sun , Hongping Yuan , Xianzhong Zeng
发明人： Winnie Yu , Hai Sun , Hongping Yuan , Xianzhong Zeng
IPC分类号： G03B27/32 , G03B27/42
CPC分类号： G03B27/32 , G03B27/53 , G03F7/70425
摘要： A method and system for exposing a plurality of fields on a substrate. The substrate has a center and an edge. The fields include a plurality of rows. The method and system include determining an exposure sequence for the plurality of fields. Each of the plurality of fields has a distance from the center and a placement in the exposure sequence. The placement of a field in the exposure sequence is based on the distance and excludes placing each of the plurality of fields in a row of the plurality of rows next to an adjacent field in the row in combination with placing each of the plurality of rows next to an adjacent row. The method and system also include exposing the plurality of fields in the exposure sequence in order of the placement.
摘要翻译：一种用于在衬底上暴露多个场的方法和系统。基板具有中心和边缘。这些字段包括多行。该方法和系统包括确定多个场的曝光序列。多个场中的每一个具有与中心的距离和曝光序列中的位置。曝光序列中的场的放置基于该距离，并且排除将多个场中的每一个放置在与行中的相邻场相邻的多行中的每一行中，并将下一个行中的每一行相结合到相邻行。该方法和系统还包括以放置顺序暴露曝光序列中的多个场。

5. 发明授权

US07910267B1 Method and system for providing optical proximity correction for structures such as a PMR nose 有权
标题翻译：用于为诸如PMR鼻子的结构提供光学邻近校正的方法和系统
公开(公告)号：US07910267B1
公开(公告)日：2011-03-22
申请号：US12333699
申请日：2008-12-12
申请人： Xianzhong Zeng , Hai Sun , Hongping Yuan , Dujiang Wan , Ling Wang
发明人： Xianzhong Zeng , Hai Sun , Hongping Yuan , Dujiang Wan , Ling Wang
IPC分类号： G03F1/00
CPC分类号： G03F1/36
摘要： An optical mask for providing a pattern for portion of an electronic device, such as a magnetic recording transducer, is disclosed. The optical mask includes a device feature and at least one detached correction feature. The device feature includes a corner corresponding to a device corner of the pattern. The device corner has an angle of greater than zero degrees and less than one hundred eighty degrees. The at least one detached correction feature resides in proximity to but is physically separated from the corner. Each of the at least one detached correction feature is sub-resolution.
摘要翻译：公开了一种用于为诸如磁记录换能器的电子设备的一部分提供图案的光掩模。光学掩模包括设备特征和至少一个分离的校正特征。设备特征包括与图案的设备角对应的角。设备角具有大于零度且小于百八十度的角度。至少一个分离的校正特征位于附近，但是与角部物理分离。至少一个分离的校正特征中的每一个都是子分辨率。

6. 发明授权

US09274438B1 Method and system for exposing photoresist in a microelectric device 有权
标题翻译：用于在微电子器件中曝光光致抗蚀剂的方法和系统
公开(公告)号：US09274438B1
公开(公告)日：2016-03-01
申请号：US12146370
申请日：2008-06-25
申请人： Hongping Yuan , Hai Sun , Xianzhong Zeng , Winnie Yu
发明人： Hongping Yuan , Hai Sun , Xianzhong Zeng , Winnie Yu
IPC分类号： G03C5/04 , G03F7/20 , H01L21/027
CPC分类号： G03F7/2022 , G03F7/70466 , H01L21/0274
摘要： A method and system provide microelectric devices on fields on a substrate. Each field includes at least one microelectric device having a critical device feature and remaining device feature(s) distal from the critical device feature. The method and system include providing a photoresist layer for fabricating the microelectric devices and exposing the photoresist layer using a dark field mask. The dark field mask is for defining a critical mask feature corresponding to the critical device feature and exposing a first portion of the fields. The first portion includes not more than five percent of each field. The method and system further include exposing the photoresist layer using a clear field mask. The clear field mask is for defining remaining mask feature(s) corresponding to the remaining device feature(s). The clear field mask exposes a second portion of the fields that is different from the first portion.
摘要翻译：一种方法和系统在衬底上的场上提供微电子器件。每个场包括至少一个具有关键装置特征的微电子装置和远离关键装置特征的剩余装置特征。所述方法和系统包括提供用于制造微电子器件的光致抗蚀剂层并且使用暗场掩模曝光光致抗蚀剂层。暗场掩模用于定义与关键设备特征对应的关键掩模特征并暴露场的第一部分。第一部分不超过每个领域的百分之五。该方法和系统还包括使用清晰的场屏蔽来曝光光致抗蚀剂层。清除场掩模用于定义对应于剩余设备特征的剩余掩模特征。清除场掩模曝光与第一部分不同的场的第二部分。

7. 发明授权

US07785666B1 Methods for fabricating a magnetic recording device 有权
标题翻译：制造磁记录装置的方法
公开(公告)号：US07785666B1
公开(公告)日：2010-08-31
申请号：US11955266
申请日：2007-12-12
申请人： Hai Sun , Liubo Hong , Hongping Yuan , Yizhong Wang , Winnie Yu , Xianzhong Zeng
发明人： Hai Sun , Liubo Hong , Hongping Yuan , Yizhong Wang , Winnie Yu , Xianzhong Zeng
IPC分类号： B05D1/32
CPC分类号： G11B5/855 , B82Y10/00 , B82Y40/00 , G03F7/0002
摘要： A method and system for fabricating a magnetic recording device are described. The method and system include providing a mask layer on the magnetic recording device and imprinting a pattern in the mask layer to form a mask. The method and system also include transferring the pattern from the mask to the magnetic recording device. In another aspect, the method and system include providing a malleable mask layer on the magnetic recording device. In this aspect, the method and system also include depressing an imprint mask into the mask layer and curing the mask layer while the imprint mask is depressed into the mask layer to provide a mask having a pattern. The pattern may correspond to a read sensor and/or a perpendicular magnetic recording pole. The method and system also include transferring the pattern from the mask to the magnetic recording device.
摘要翻译：描述了用于制造磁记录装置的方法和系统。所述方法和系统包括在磁记录装置上设置掩模层并在掩模层中印刷图案以形成掩模。该方法和系统还包括将图案从掩模转移到磁记录装置。在另一方面，该方法和系统包括在磁记录装置上提供可延展的掩模层。在这方面，该方法和系统还包括将印模掩模压入掩模层中并固化掩模层，同时将印模掩模压入掩模层中以提供具有图案的掩模。图案可以对应于读取传感器和/或垂直磁记录极。该方法和系统还包括将图案从掩模转移到磁记录装置。

8. 发明申请

US20100290157A1 Damascene coil processes and structures 审中-公开
标题翻译：大马士革线圈工艺和结构
公开(公告)号：US20100290157A1
公开(公告)日：2010-11-18
申请号：US12466353
申请日：2009-05-14
申请人： Jinqiu Zhang , Hongping Yuan , Hai Sun , Ming Zhao
发明人： Jinqiu Zhang , Hongping Yuan , Hai Sun , Ming Zhao
IPC分类号： G11B5/17 , B05D3/00 , B44C1/22 , C25D5/34
CPC分类号： G11B5/3123 , C25D7/123 , G11B5/17
摘要： A magnetic recording head is provided. The magnetic recording head comprises a write pole and a write coil structure configured to generate a magnetic field in the write pole. The write coil structure comprises a substrate layer and a coil material disposed within the substrate layer. The write coil structure is substantially free of photoresist. A method for forming a write coil structure is also provided. The method comprises the steps of providing a substrate layer, forming a photoresist pattern mask over the substrate layer, opening a damascene trench in the substrate layer by reactive ion etching, and disposing a coil material into the damascene trench in the substrate layer.
摘要翻译：提供磁记录头。磁记录头包括写极和写线圈结构，其被配置为在写极中产生磁场。写入线圈结构包括衬底层和设置在衬底层内的线圈材料。写入线圈结构基本上不含光致抗蚀剂。还提供了一种用于形成写入线圈结构的方法。该方法包括以下步骤：提供衬底层，在衬底层上形成光致抗蚀剂图案掩模，通过反应离子蚀刻在衬底层中打开镶嵌沟槽，以及将线圈材料设置在衬底层中的镶嵌沟槽中。

9. 发明授权

US08284517B1 Perpendicular magnetic recording head 有权
标题翻译：垂直磁记录头
公开(公告)号：US08284517B1
公开(公告)日：2012-10-09
申请号：US13372775
申请日：2012-02-14
申请人： Hai Sun , Jinqiu Zhang , Hongping Yuan , Donghong Li , Liubo Hong , Yong Shen
发明人： Hai Sun , Jinqiu Zhang , Hongping Yuan , Donghong Li , Liubo Hong , Yong Shen
IPC分类号： G11B5/127
CPC分类号： G11B5/3163 , G11B5/1278 , G11B5/3116 , Y10T29/49041
摘要： A perpendicular magnetic recording (PMR) head comprises a PMR pole having at least one side, a bottom, and a top wider than the bottom, a first portion of the at least one side being substantially vertical, a second portion of the at least one side being nonvertical, the top portion having a width not greater than one hundred fifty nanometers. The PMR head further comprises a nonmagnetic layer surrounding the bottom and the at least one side of the PMR pole, an intermediate layer substantially surrounding at least the second portion of the at least one side of the PMR pole, and a planarization stop layer adjacent to the first portion of the at least one side of the PMR pole.
摘要翻译：垂直磁记录（PMR）头包括具有至少一个侧面，底部和顶部宽于底部的PMR极，所述至少一个侧面的第一部分基本上垂直，所述至少一个的第二部分侧面是非垂直的，顶部具有不大于一百五十纳米的宽度。 PMR头还包括围绕PMR极的底部和至少一侧的非磁性层，基本上围绕PMR极的至少一个侧面的至少第二部分的中间层和与PMR极的相邻的平坦化停止层 PMR极点的至少一侧的第一部分。

10. 发明授权

US08136224B1 Method and system for providing a perpendicular magnetic recording head utilizing a mask having an undercut line 有权
标题翻译：用于使用具有底切线的掩模来提供垂直磁记录头的方法和系统
公开(公告)号：US08136224B1
公开(公告)日：2012-03-20
申请号：US12121540
申请日：2008-05-15
申请人： Hai Sun , Jinqiu Zhang , Hongping Yuan , Donghong Li , Liubo Hong , Yong Shen
发明人： Hai Sun , Jinqiu Zhang , Hongping Yuan , Donghong Li , Liubo Hong , Yong Shen
IPC分类号： G11B5/127
CPC分类号： G11B5/3163 , G11B5/1278 , G11B5/3116 , Y10T29/49041
摘要： A method and system for providing a PMR pole in a magnetic recording transducer including an intermediate layer are disclosed. The method and system include providing a mask including a line on the intermediate layer. The line has at least one side, a top, and a bottom. The side(s) have an undercut such that the top of the line is wider than the bottom. The method further include providing a hard mask on the PMR transducer. The hard mask includes an aperture corresponding to the line. Thus, an aperture in the hard mask corresponding to the line is provided. The method and system also include forming a trench in the intermediate layer under the aperture. The trench has a bottom and a top wider than the bottom. The method further includes providing a PMR pole, at least a portion of which resides in the trench.
摘要翻译：公开了一种用于在包括中间层的磁记录换能器中提供PMR极的方法和系统。该方法和系统包括在中间层上提供包括线的掩模。该线至少有一边，顶部和底部。侧面具有底切，使得线的顶部比底部更宽。该方法还包括在PMR传感器上提供硬掩模。硬掩模包括对应于该线的孔。因此，提供了对应于该线的硬掩模中的孔。该方法和系统还包括在孔下方的中间层中形成沟槽。沟槽的底部和顶部宽于底部。该方法还包括提供PMR极，其至少一部分位于沟槽中。

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