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1. 发明申请

US20080070801A1 Production of nano-powder based combinatorial libraries 有权
标题翻译：生产基于纳米粉末的组合文库
公开(公告)号：US20080070801A1
公开(公告)日：2008-03-20
申请号：US11251562
申请日：2005-10-13
申请人： Xiao-Dong Xiang , Young K. Yoo , Yi-Qun Li , Daesig Kim , Sohrab Erfanian
发明人： Xiao-Dong Xiang , Young K. Yoo , Yi-Qun Li , Daesig Kim , Sohrab Erfanian
IPC分类号： C40B40/00 , C40B50/04 , C40B60/14
CPC分类号： B01J19/0046 , B01J2219/0036 , B01J2219/00416 , B01J2219/00441 , B01J2219/00443 , B01J2219/00495 , B01J2219/00533 , B01J2219/0059 , B01J2219/00603 , B01J2219/00659 , B01J2219/00745 , B01J2219/0075 , C40B40/18 , C40B60/14
摘要： The present invention relates to methods and apparatus for synthesizing combinatorial materials libraries using pyrolysis techniques. In certain embodiments, the methods involve varying the precursors and/or reactant gases in an operating pyrolysis unit to continuously vary the resulting nanoparticle composition and collecting different nanoparticles at different locations on a substrate using a spatially addressable particle collector.
摘要翻译：本发明涉及使用热解技术合成组合材料库的方法和装置。在某些实施方案中，所述方法包括改变操作热解单元中的前体和/或反应气体，以连续地改变所得到的纳米颗粒组合物并使用空间可寻址的颗粒收集器在衬底上的不同位置处收集不同的纳米颗粒。

2. 发明授权

US07754656B2 Production of nano-powder based combinatorial libraries 有权
标题翻译：生产基于纳米粉末的组合文库
公开(公告)号：US07754656B2
公开(公告)日：2010-07-13
申请号：US11251562
申请日：2005-10-13
申请人： Xiao-Dong Xiang , Young K. Yoo , Yi-Qun Li , Daesig Kim , Sohrab Erfanian
发明人： Xiao-Dong Xiang , Young K. Yoo , Yi-Qun Li , Daesig Kim , Sohrab Erfanian
IPC分类号： C40B30/00
CPC分类号： B01J19/0046 , B01J2219/0036 , B01J2219/00416 , B01J2219/00441 , B01J2219/00443 , B01J2219/00495 , B01J2219/00533 , B01J2219/0059 , B01J2219/00603 , B01J2219/00659 , B01J2219/00745 , B01J2219/0075 , C40B40/18 , C40B60/14
摘要： The present invention relates to methods and apparatus for synthesizing combinatorial materials libraries using pyrolysis techniques. In certain embodiments, the methods involve varying the precursors and/or reactant gases in an operating pyrolysis unit to continuously vary the resulting nanoparticle composition and collecting different nanoparticles at different locations on a substrate using a spatially addressable particle collector.
摘要翻译：本发明涉及使用热解技术合成组合材料库的方法和装置。在某些实施方案中，所述方法包括改变操作热解单元中的前体和/或反应气体，以连续地改变所得到的纳米颗粒组合物并使用空间可寻址的颗粒收集器在衬底上的不同位置处收集不同的纳米颗粒。

3. 发明授权

US06641940B1 Low loss dielectric materials for microwave applications 失效
标题翻译：用于微波应用的低损耗介电材料
公开(公告)号：US06641940B1
公开(公告)日：2003-11-04
申请号：US09974430
申请日：2001-10-09
申请人： Yi-Qun Li , Xiao-Dong Xiang , Yi Dong , Shifan Cheng , Gang Wang , Ning Wang
发明人： Yi-Qun Li , Xiao-Dong Xiang , Yi Dong , Shifan Cheng , Gang Wang , Ning Wang
IPC分类号： B32B900
CPC分类号： C04B35/6262 , C04B35/4682 , C04B41/009 , C04B41/5041 , C04B41/87 , C04B2111/00844 , C04B2235/3208 , C04B2235/3213 , C04B2235/3217 , C04B2235/3224 , C04B2235/3236 , C04B2235/3239 , C04B2235/3241 , C04B2235/3244 , C04B2235/3251 , C04B2235/3256 , C04B2235/3258 , C04B2235/3262 , C04B2235/3286 , C04B2235/604 , C04B2235/761 , C23C14/088 , H01P1/2002 , C04B41/4529 , C04B35/04 , C04B35/44
摘要： Composition for a solid state material, in bulk and in thin film form, that provides relatively high dielectric permittivity that is tunable with variable electrical field bias, relatively low loss tangent and low leakage current for microwave applications. In a first embodiment, the material is BaySr1−yTi1−xMxO3, where M is a substance or mixture including one or more elements drawn from a group consisting of Ta, Zr, Hf, V, Nb, Al, Ga, Cr, Mo, W, Mn, Sc and Re, and the indices x and y satisfy 0≦x≦1 and 0≦y≦1. A preferred choice is M=Ta, V, W, Mo and/or Nb. In a second embodiment, the material is BaySr1−yTi1−x−zTaxMzO3, where M is a substance or mixture including one or more trivalent elements drawn from a group consisting of Al, Ga and Cr and the indices x, y and z satisfy 0≦x+z≦1 and 0≦y≦1.
摘要翻译：用于固体材料的体积和薄膜形式的组合物，其提供相对高的介电常数，其可变电场偏置可调，微波应用的相对低的损耗角正切和低泄漏电流。在第一实施方案中，材料是BaySr1-yTi1-xMxO3，其中M是包含从由Ta，Zr，Hf，V，Nb，Al，Ga，Cr，Mo组成的组中的一种或多种元素的物质或混合物， W，Mn，Sc和Re，并且指数x和y满足0 <= x <= 1且0 <= y <= 1。优选的选择是M = Ta，V，W，Mo和/或Nb。在第二实施方案中，材料是BaySr1-yTi1-x-zTaxMzO3，其中M是包含从Al，Ga和Cr组成的组中绘制的一种或多种三价元素的物质或混合物，并且指数x，y和z满足0 <= x + z <= 1，0 <= Y＆LE; 1。

4. 发明授权

US07597817B1 Magnetic doped perovskite oxides 失效
标题翻译：磁掺杂钙钛矿氧化物
公开(公告)号：US07597817B1
公开(公告)日：2009-10-06
申请号：US10829590
申请日：2004-04-21
申请人： Yi-Qun Li , Ning Wang , Qizhen Xue , Shifan Cheng , Xiao-Dong Xiang
发明人： Yi-Qun Li , Ning Wang , Qizhen Xue , Shifan Cheng , Xiao-Dong Xiang
IPC分类号： H01F1/03 , C01F11/00 , C01F17/00
CPC分类号： H01F1/407 , C01G23/006 , C01G49/0036 , C01G49/009 , C01G51/006 , C01G53/006 , C01P2002/34 , C01P2002/52 , C01P2002/54 , C01P2002/72 , C01P2006/42
摘要： Novel metal oxide compositions are disclosed. These ferromagnetic or ferrimagnetic compositions have resitivities that vary between those of semiconducting and insulating materials, and they further exhibit Curie temperatures greater than room temperature (i.e., greater than 300 K). They are perovskite structures with the general chemical formulas (A1-xMx)BO3, (A1-xMx)(B′B″)O3 or A(B1-xMx)O3, where A can be a 1+, 2+ and 3+ charged ion; B can be a 5+, 4+, 3+ charged ion; B′ and B″ can be 2+, 3+, 4+, 5+ and 6+ charged ion. M is a magnetic ion dopant. X-ray diffraction patterns are presented for exemplary compositions.
摘要翻译：公开了新的金属氧化物组合物。这些铁磁性或亚铁磁性组合物具有在半导体材料和绝缘材料之间变化的灵敏度，并且它们还表现出高于室温（即大于300K）的居里温度。它们是具有一般化学式（A1-xMx）BO3，（A1-xMx）（B'B“）O3或A（B1-xMx）O3的钙钛矿结构，其中A可以是1 +，2+和3 +带电离子; B可以是5+，4+，3+带电离子; B'和B“可以是2+，3+，4+，5+和6+带电离子。 M是磁离子掺杂剂。呈现X射线衍射图案用于示例性组合物。

5. 发明授权

US06580271B2 Magnetic field sensors 失效
标题翻译：磁场传感器
公开(公告)号：US06580271B2
公开(公告)日：2003-06-17
申请号：US09734813
申请日：2000-12-11
申请人： Yi-Qun Li , Xiao-Dong Xiang
发明人： Yi-Qun Li , Xiao-Dong Xiang
IPC分类号： G01R3300
CPC分类号： G01R33/18 , G01R33/02
摘要： Methods and systems for estimating a value of a static or time varying magnetic field that is present. In a first embodiment, a layer of a magnetostrictive (MNS) material and a layer of a piezoresistive (PZR) material are combined and exposed to the unknown magnetic field, and a current source and charge-carrying line are connected between two spaced apart locations in the PZR layer. A meter measures a voltage difference or current between the two locations and estimates the value of the magnetic field. In a second embodiment, a layer of a magnetostrictive (MNS) material and a layer of a piezoelectric (PZT) material are combined and exposed to a combination of the unknown magnetic field and a selected time varying magnetic field. A meter measures a voltage change, current change or other electrical variable between two spaced apart locations at two or more selected times and estimates the value of the unknown magnetic field. The layers of MNS, PZR and/or PZT material may be planar or may be selected annular sectors or cylindrical sectors.
摘要翻译：用于估计存在的静态或时变磁场的值的方法和系统。在第一实施例中，磁致伸缩（MNS）材料层和压阻（PZR）材料层被组合并暴露于未知磁场，并且电流源和充电线连接在两个间隔开的位置在PZR层。仪表测量两个位置之间的电压差或电流，并估计磁场的值。在第二实施例中，将磁致伸缩（MNS）材料层和压电（PZT）材料层组合并暴露于未知磁场和选定的时变磁场的组合。一个仪表在两个或多个选定的时间测量两个间隔开的位置之间的电压变化，电流变化或其他电气变量，并估计未知磁场的值。 MNS，PZR和/或PZT材料的层可以是平面的或可以是选择的环形扇形或圆柱形扇形。

6. 发明授权

US08358141B2 Analytical scanning evanescent microwave microscope and control stage 失效
公开(公告)号：US08358141B2
公开(公告)日：2013-01-22
申请号：US12465022
申请日：2009-05-13
申请人： Xiao-Dong Xiang , Chen Gao , Fred Duewer , Hai Tao Yang , Yalin Lu
发明人： Xiao-Dong Xiang , Chen Gao , Fred Duewer , Hai Tao Yang , Yalin Lu
IPC分类号： G01R27/04 , G01R31/308
CPC分类号： G01Q60/22
摘要： A scanning evanescent microwave microscope (SEMM) that uses near-field evanescent electromagnetic waves to probe sample properties is disclosed. The SEMM is capable of high resolution imaging and quantitative measurements of the electrical properties of the sample. The SEMM has the ability to map dielectric constant, loss tangent, conductivity, electrical impedance, and other electrical parameters of materials. Such properties are then used to provide distance control over a wide range, from to microns to nanometers, over dielectric and conductive samples for a scanned evanescent microwave probe, which enable quantitative non-contact and submicron spatial resolution topographic and electrical impedance profiling of dielectric, nonlinear dielectric and conductive materials. The invention also allows quantitative estimation of microwave impedance using signals obtained by the scanned evanescent microwave probe and quasistatic approximation modeling. The SEMM can be used to measure electrical properties of both dielectric and electrically conducting materials.

7. 发明授权

US08049996B2 Coherent spin valve and related devices 失效
标题翻译：相干自旋阀及相关装置
公开(公告)号：US08049996B2
公开(公告)日：2011-11-01
申请号：US12236327
申请日：2008-09-23
申请人： Haitao Yang , Xiao-Dong Xiang
发明人： Haitao Yang , Xiao-Dong Xiang
IPC分类号： G11B5/39 , H01L29/82
CPC分类号： G06N99/002 , B82Y10/00 , B82Y25/00 , G11B5/3903 , H01F10/1936 , H01F10/3268 , H01F10/329 , Y10S977/933 , Y10T428/1107
摘要： Embodiments of the present invention are directed toward the field of spintronics, and in particular, systems and devices capable of performing spin coherent quantum logic operations. The inventive spin valve comprises two ferromagnetic electrode layers, and a non-magnetic conducting layer positioned therebetween. An external magnetic field B0 is applied in the Z direction, such that the two electrode layers are each magnetized in a direction substantially parallel to the external magnetic field. Rather than attempting to change the magnetization of one of the ferromagnetic layers, as is the case in prior art technologies, it is the direction of the electron spin that is manipulated in the present embodiments while the electron is traveling through the middle, nonmagnetic layer. One of the ferromagnetic electrodes may be the tip of a scanning tunneling microscope (STM). This configuration may further comprise a bias voltage source connected between the STM tip and the other ferromagnetic electrode, such that a spin polarized tunneling current is conducted between the two.
摘要翻译：本发明的实施例涉及自旋电子学领域，特别是能够执行自相关量子逻辑运算的系统和装置。本发明的自旋阀包括两个铁磁电极层和位于它们之间的非磁性导电层。在Z方向上施加外部磁场B0，使得两个电极层在大致平行于外部磁场的方向上各自被磁化。与现有技术中的情况一样，不是试图改变铁磁层之一的磁化，而是在电子行进通过中间非磁性层时在本实施例中操纵的电子自旋的方向。铁磁电极之一可以是扫描隧道显微镜（STM）的尖端。该配置还可以包括连接在STM尖端和另一个铁磁电极之间的偏置电压源，使得在两者之间进行自旋极化隧穿电流。

8. 发明授权

US08018345B2 RFID tags having ferromagnetic patches 有权
标题翻译：具有铁磁性贴片的RFID标签
公开(公告)号：US08018345B2
公开(公告)日：2011-09-13
申请号：US12066070
申请日：2006-09-07
申请人： Xiao-Dong Xiang , Zhi-Gang Yu , Huan-Hua Wang
发明人： Xiao-Dong Xiang , Zhi-Gang Yu , Huan-Hua Wang
IPC分类号： G08B13/14
CPC分类号： G06K19/0672
摘要： RFID tags and devices disclosed herein use ferromagnetic films to store information. The tags include patches of ferromagnetic materials, each patch having a particular ferromagnetic resonance frequency determined by the composition of the ferromagnetic film. When stimulated, the patches emit microwave or RF signals at their resonance frequencies and at intensities proportional to the patch sizes. The signals are read and the frequency spectrum of the tag may be determined by using a FFT. Identity and other information may be provided by the spectrum.
摘要翻译：本文公开的RFID标签和设备使用铁磁膜来存储信息。标签包括铁磁材料的贴片，每个贴片具有由铁磁膜的组成确定的特定的铁磁共振频率。当被刺激时，贴片以它们的共振频率和与贴片尺寸成比例的强度发射微波或RF信号。读取信号，并且可以通过使用FFT来确定标签的频谱。身份和其他信息可能由频谱提供。

9. 发明申请

US20090302866A1 ANALYTICAL SCANNING EVANESCENT MICROWAVE MICROSCOPE AND CONTROL STAGE 失效
标题翻译：分析扫描历史微波微波和控制阶段
公开(公告)号：US20090302866A1
公开(公告)日：2009-12-10
申请号：US12465022
申请日：2009-05-13
申请人： Xiao-Dong Xiang , Chen Gao , Fred Duewer , Hai Tao Yang , Yalin Lu
发明人： Xiao-Dong Xiang , Chen Gao , Fred Duewer , Hai Tao Yang , Yalin Lu
IPC分类号： G01R27/04 , G01R1/06
CPC分类号： G01Q60/22
摘要： A scanning evanescent microwave microscope (SEMM) that uses near-field evanescent electromagnetic waves to probe sample properties is disclosed. The SEMM is capable of high resolution imaging and quantitative measurements of the electrical properties of the sample. The SEMM has the ability to map dielectric constant, loss tangent, conductivity, electrical impedance, and other electrical parameters of materials. Such properties are then used to provide distance control over a wide range, from to microns to nanometers, over dielectric and conductive samples for a scanned evanescent microwave probe, which enable quantitative non-contact and submicron spatial resolution topographic and electrical impedance profiling of dielectric, nonlinear dielectric and conductive materials. The invention also allows quantitative estimation of microwave impedance using signals obtained by the scanned evanescent microwave probe and quasistatic approximation modeling. The SEMM can be used to measure electrical properties of both dielectric and electrically conducting materials.
摘要翻译：公开了一种使用近场瞬逝电磁波探测样品特性的扫描瞬逝微波显微镜（SEMM）。 SEMM能够对样品的电性能进行高分辨率成像和定量测量。 SEMM具有映射材料的介电常数，损耗角正切，电导率，电阻抗等电参数的能力。然后使用这种性质在扫描的ev逝微波探针的电介质和导电样品上在宽范围（从微米到纳米）之间提供距离控制，其能够实现电介质的定量非接触和亚微米空间分辨率地形和电阻抗分布，非线性介质和导电材料。本发明还允许使用由扫描的ev逝微波探测器获得的信号和准静态近似建模来定量估计微波阻抗。 SEMM可用于测量电介质和导电材料的电学性能。

10. 发明授权

US07550963B1 Analytical scanning evanescent microwave microscope and control stage 失效
标题翻译：分析扫描渐逝微波显微镜和控制阶段
公开(公告)号：US07550963B1
公开(公告)日：2009-06-23
申请号：US09608311
申请日：2000-06-30
申请人： Xiao-Dong Xiang , Chen Gao , Fred Duewer , Hai Tao Yang , Yalin Lu
发明人： Xiao-Dong Xiang , Chen Gao , Fred Duewer , Hai Tao Yang , Yalin Lu
IPC分类号： G01R27/00
CPC分类号： G01Q60/22
摘要： A scanning evanescent microwave microscope (SEMM) that uses near-field evanescent electromagnetic waves to probe sample properties is disclosed. The SEMM is capable of high resolution imaging and quantitative measurements of the electrical properties of the sample. The SEMM has the ability to map dielectric constant, loss tangent, conductivity, electrical impedance, and other electrical parameters of materials. Such properties are then used to provide distance control over a wide range, from to microns to nanometers, over dielectric and conductive samples for a scanned evanescent microwave probe, which enable quantitative non-contact and submicron spatial resolution topographic and electrical impedance profiling of dielectric, nonlinear dielectric and conductive materials. The invention also allows quantitative estimation of microwave impedance using signals obtained by the scanned evanescent microwave probe and quasistatic approximation modeling. The SEMM can be used to measure electrical properties of both dielectric and electrically conducting materials.
摘要翻译：公开了一种使用近场瞬逝电磁波探测样品特性的扫描瞬逝微波显微镜（SEMM）。 SEMM能够对样品的电性能进行高分辨率成像和定量测量。 SEMM具有映射材料的介电常数，损耗角正切，电导率，电阻抗等电参数的能力。然后使用这种性质在扫描的ev逝微波探针的电介质和导电样品上在宽范围（从微米到纳米）之间提供距离控制，其能够实现电介质的定量非接触和亚微米空间分辨率地形和电阻抗分布，非线性介质和导电材料。本发明还允许使用由扫描的ev逝微波探测器获得的信号和准静态近似建模来定量估计微波阻抗。 SEMM可用于测量电介质和导电材料的电学性能。

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