专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20060231756A1 Analytical scanning evanescent microwave microscope and control stage 审中-公开
公开(公告)号：US20060231756A1
公开(公告)日：2006-10-19
申请号：US11454171
申请日：2006-06-14
申请人： Xiao-Dong Xiang , Chen Gao , Fred Duewer , Hai Yang
发明人： Xiao-Dong Xiang , Chen Gao , Fred Duewer , Hai Yang
IPC分类号： G01N23/00
CPC分类号： G01Q60/22
摘要： A scanning evanescent microwave microscope (SEMM) that uses near-field evanescent electromagnetic waves to probe sample properties is disclosed. The SEMM is capable of high resolution imaging and quantitative measurements of the electrical properties of the sample. The SEMM has the ability to map dielectric constant, loss tangent, conductivity, electrical impedance, and other electrical parameters of materials. Such properties are then used to provide distance control over a wide range, from to microns to nanometers, over dielectric and conductive samples for a scanned evanescent microwave probe, which enable quantitative non-contact and submicron spatial resolution topographic and electrical impedance profiling of dielectric, nonlinear dielectric and conductive materials. The invention also allows quantitative estimation of microwave impedance using signals obtained by the scanned evanescent microwave probe and quasistatic approximation modeling. The SEMM can be used to measure electrical properties of both dielectric and electrically conducting materials.

2. 发明授权

US08358141B2 Analytical scanning evanescent microwave microscope and control stage 失效
公开(公告)号：US08358141B2
公开(公告)日：2013-01-22
申请号：US12465022
申请日：2009-05-13
申请人： Xiao-Dong Xiang , Chen Gao , Fred Duewer , Hai Tao Yang , Yalin Lu
发明人： Xiao-Dong Xiang , Chen Gao , Fred Duewer , Hai Tao Yang , Yalin Lu
IPC分类号： G01R27/04 , G01R31/308
CPC分类号： G01Q60/22
摘要： A scanning evanescent microwave microscope (SEMM) that uses near-field evanescent electromagnetic waves to probe sample properties is disclosed. The SEMM is capable of high resolution imaging and quantitative measurements of the electrical properties of the sample. The SEMM has the ability to map dielectric constant, loss tangent, conductivity, electrical impedance, and other electrical parameters of materials. Such properties are then used to provide distance control over a wide range, from to microns to nanometers, over dielectric and conductive samples for a scanned evanescent microwave probe, which enable quantitative non-contact and submicron spatial resolution topographic and electrical impedance profiling of dielectric, nonlinear dielectric and conductive materials. The invention also allows quantitative estimation of microwave impedance using signals obtained by the scanned evanescent microwave probe and quasistatic approximation modeling. The SEMM can be used to measure electrical properties of both dielectric and electrically conducting materials.

3. 发明申请

US20090302866A1 ANALYTICAL SCANNING EVANESCENT MICROWAVE MICROSCOPE AND CONTROL STAGE 失效
标题翻译：分析扫描历史微波微波和控制阶段
公开(公告)号：US20090302866A1
公开(公告)日：2009-12-10
申请号：US12465022
申请日：2009-05-13
申请人： Xiao-Dong Xiang , Chen Gao , Fred Duewer , Hai Tao Yang , Yalin Lu
发明人： Xiao-Dong Xiang , Chen Gao , Fred Duewer , Hai Tao Yang , Yalin Lu
IPC分类号： G01R27/04 , G01R1/06
CPC分类号： G01Q60/22
摘要： A scanning evanescent microwave microscope (SEMM) that uses near-field evanescent electromagnetic waves to probe sample properties is disclosed. The SEMM is capable of high resolution imaging and quantitative measurements of the electrical properties of the sample. The SEMM has the ability to map dielectric constant, loss tangent, conductivity, electrical impedance, and other electrical parameters of materials. Such properties are then used to provide distance control over a wide range, from to microns to nanometers, over dielectric and conductive samples for a scanned evanescent microwave probe, which enable quantitative non-contact and submicron spatial resolution topographic and electrical impedance profiling of dielectric, nonlinear dielectric and conductive materials. The invention also allows quantitative estimation of microwave impedance using signals obtained by the scanned evanescent microwave probe and quasistatic approximation modeling. The SEMM can be used to measure electrical properties of both dielectric and electrically conducting materials.
摘要翻译：公开了一种使用近场瞬逝电磁波探测样品特性的扫描瞬逝微波显微镜（SEMM）。 SEMM能够对样品的电性能进行高分辨率成像和定量测量。 SEMM具有映射材料的介电常数，损耗角正切，电导率，电阻抗等电参数的能力。然后使用这种性质在扫描的ev逝微波探针的电介质和导电样品上在宽范围（从微米到纳米）之间提供距离控制，其能够实现电介质的定量非接触和亚微米空间分辨率地形和电阻抗分布，非线性介质和导电材料。本发明还允许使用由扫描的ev逝微波探测器获得的信号和准静态近似建模来定量估计微波阻抗。 SEMM可用于测量电介质和导电材料的电学性能。

4. 发明授权

US07550963B1 Analytical scanning evanescent microwave microscope and control stage 失效
标题翻译：分析扫描渐逝微波显微镜和控制阶段
公开(公告)号：US07550963B1
公开(公告)日：2009-06-23
申请号：US09608311
申请日：2000-06-30
申请人： Xiao-Dong Xiang , Chen Gao , Fred Duewer , Hai Tao Yang , Yalin Lu
发明人： Xiao-Dong Xiang , Chen Gao , Fred Duewer , Hai Tao Yang , Yalin Lu
IPC分类号： G01R27/00
CPC分类号： G01Q60/22
摘要： A scanning evanescent microwave microscope (SEMM) that uses near-field evanescent electromagnetic waves to probe sample properties is disclosed. The SEMM is capable of high resolution imaging and quantitative measurements of the electrical properties of the sample. The SEMM has the ability to map dielectric constant, loss tangent, conductivity, electrical impedance, and other electrical parameters of materials. Such properties are then used to provide distance control over a wide range, from to microns to nanometers, over dielectric and conductive samples for a scanned evanescent microwave probe, which enable quantitative non-contact and submicron spatial resolution topographic and electrical impedance profiling of dielectric, nonlinear dielectric and conductive materials. The invention also allows quantitative estimation of microwave impedance using signals obtained by the scanned evanescent microwave probe and quasistatic approximation modeling. The SEMM can be used to measure electrical properties of both dielectric and electrically conducting materials.
摘要翻译：公开了一种使用近场瞬逝电磁波探测样品特性的扫描瞬逝微波显微镜（SEMM）。 SEMM能够对样品的电性能进行高分辨率成像和定量测量。 SEMM具有映射材料的介电常数，损耗角正切，电导率，电阻抗等电参数的能力。然后使用这种性质在扫描的ev逝微波探针的电介质和导电样品上在宽范围（从微米到纳米）之间提供距离控制，其能够实现电介质的定量非接触和亚微米空间分辨率地形和电阻抗分布，非线性介质和导电材料。本发明还允许使用由扫描的ev逝微波探测器获得的信号和准静态近似建模来定量估计微波阻抗。 SEMM可用于测量电介质和导电材料的电学性能。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式