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1. 发明申请

US20090176325A1 HALFTONE MASK, METHOD OF MANUFACTURING THE SAME, AND METHOD OF MANUFACTURING AN ARRAY SUBSTRATE USING THE SAME 有权
标题翻译： HONEFTONE MASK，其制造方法和使用该方法制造阵列基板的方法
公开(公告)号：US20090176325A1
公开(公告)日：2009-07-09
申请号：US12200525
申请日：2008-08-28
申请人： Woo-Seok JEON , Jung-In PARK , Hi-Kuk LEE
发明人： Woo-Seok JEON , Jung-In PARK , Hi-Kuk LEE
IPC分类号： G03F1/00 , H01L33/00
CPC分类号： H01L27/1288 , G03F1/50 , G03F7/70791 , H01L27/1214
摘要： A halftone mask includes a transparent substrate, a light-blocking layer, a first semi-transparent layer and a second semi-transparent layer. The transparent substrate includes a light-blocking area, a light-transmitting area, a first halftone area transmitting first light, and a second halftone area transmitting second light that is less than the first light. The light-blocking layer is formed in the light-blocking area to fully block light from being transmitted. The first and second semi-transparent layers are formed on the transparent substrate. At least one of the first and second semi-transparent layers is formed in the first halftone area, and the first and second semi-transparent layers are overlapped with each other on the second halftone area.
摘要翻译：半色调掩模包括透明基板，遮光层，第一半透明层和第二半透明层。透明基板包括遮光区域，透光区域，透射第一光的第一半色调区域和透射比第一光线小的第二光的第二半色调区域。遮光层形成在遮光区域中，以完全阻止光的透射。第一和第二半透明层形成在透明基板上。第一半透明层和第二半透明层中的至少一个形成在第一半色调区域中，并且第一半透明层和第二半透明层在第二半色调区域上彼此重叠。

2. 发明申请

US20070259272A1 PHOTORESIST COMPOSITION AND METHOD OF MANUFACTURING A THIN-FILM TRANSISTOR SUBSTRATE USING THE SAME 有权
标题翻译：光电组合物及其制造方法使用薄膜晶体管基板
公开(公告)号：US20070259272A1
公开(公告)日：2007-11-08
申请号：US11554194
申请日：2006-10-30
申请人： Hi-Kuk LEE , Woo-Seok JEON , Doo-Hee JUNG , Jeong-Min PARK , Deok-Man KANG , Si-Young JUNG , Jae-Young CHOI
发明人： Hi-Kuk LEE , Woo-Seok JEON , Doo-Hee JUNG , Jeong-Min PARK , Deok-Man KANG , Si-Young JUNG , Jae-Young CHOI
IPC分类号： G03C5/00
CPC分类号： H01L27/1288 , G03F7/0233 , G03F7/0236 , H01L27/1214
摘要： A photoresist composition includes about 100 parts by weight of resin mixture including novolak resin and acryl resin and about 10 parts to about 50 parts by weight of naphthoquinone diazosulfonic acid ester. A weight-average molecular weight of the novolak resin is no less than about 30,000. A weight-average molecular weight of the acryl resin is no less than about 20,000. A content of the acryl resin is about 1% to about 15% by weight based on a total weight of the resin mixture. When a photoresist film formed using the photoresist composition is heated, a profile variation of the photoresist composition is relatively small. Therefore, a residual photoresist film has a uniform thickness, and a short circuit and/or an open defect in a TFT substrate may be reduced.
摘要翻译：光致抗蚀剂组合物包括约100重量份的包括酚醛清漆树脂和丙烯酸树脂的树脂混合物和约10重量份至约50重量份的萘醌重氮磺酸酯。酚醛清漆树脂的重均分子量不小于约30,000。丙烯酸树脂的重均分子量不小于约20,000。基于树脂混合物的总重量，丙烯酸树脂的含量为约1重量％至约15重量％。当使用光致抗蚀剂组合物形成的光致抗蚀剂膜被加热时，光致抗蚀剂组合物的轮廓变化相对较小。因此，残留的光致抗蚀剂膜具有均匀的厚度，并且可能减小TFT基板中的短路和/或开路缺陷。

3. 发明申请

US20100167206A1 PHOTORESIST COMPOSITION AND METHOD FOR MANUFACTURING A DISPLAY SUBSTRATE USING THE PHOTORESIST COMPOSITION 审中-公开
标题翻译：光电组合物和使用光电组合物制造显示基板的方法
公开(公告)号：US20100167206A1
公开(公告)日：2010-07-01
申请号：US12557215
申请日：2009-09-10
申请人： Woo-Seok JEON , Sang-Hyun YUN , Hi-Kuk LEE , Deok-Man KANG , Sae-Tae OH
发明人： Woo-Seok JEON , Sang-Hyun YUN , Hi-Kuk LEE , Deok-Man KANG , Sae-Tae OH
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： G02F1/13439 , G03F7/0007 , G03F7/0226 , H01L27/1288
摘要： A photoresist composition includes a novolac resin, a benzophenone photosensitizer and an ethylidyne tris phenol photosensitizer, and an organic solvent. Thus, a micropattern having a higher resolution than the resolution of an exposure apparatus is formed to decrease an amount of exposure and/or exposure time, thereby improving manufacturing reliability and productivity.
摘要翻译：光致抗蚀剂组合物包括酚醛清漆树脂，二苯甲酮光敏剂和乙基三苯酚光敏剂以及有机溶剂。因此，形成具有比曝光装置的分辨率高的分辨率的微图案，以减少曝光量和/或曝光时间，从而提高制造可靠性和生产率。

4. 发明申请

US20110199620A1 METHOD OF DETERMINING AN OVERLAP DISTANCE OF AN OPTICAL HEAD AND DIGITAL EXPOSURE DEVICE USING THE METHOD 有权
标题翻译：使用该方法确定光头和数字曝光装置的重叠距离的方法
公开(公告)号：US20110199620A1
公开(公告)日：2011-08-18
申请号：US12902745
申请日：2010-10-12
申请人： Sang-Hyun YUN , Hi-Kuk LEE , Sang-Woo BAE , Cha-Dong KIM , Jung-In PARK
发明人： Sang-Hyun YUN , Hi-Kuk LEE , Sang-Woo BAE , Cha-Dong KIM , Jung-In PARK
IPC分类号： G01B11/14
CPC分类号： G01B11/14 , G03F7/70291 , G03F7/70475
摘要： An apparatus and a method for determining an overlap distance of an optical head is disclosed. Positions and light amount distributions of each light spot can be measured, which may be provided from an optical head to a substrate. Gaussian distribution may be applied to the positions and the light amount distributions to calculate a compensation model of each of the light spots. A first accumulated light amount corresponding to each first area of the substrate may be calculated if the optical head is scanning along a first direction of the substrate using the compensation model. A second accumulated light amount corresponding to each second area overlapped with the each first area is calculated if the optical head is scanning along the first direction, which is moved in a second direction by a first distance using the compensation model. An overlap distance may be determined based on a uniformity of summations of the first and second accumulated light amount.
摘要翻译：公开了一种用于确定光学头的重叠距离的装置和方法。可以测量每个光点的位置和光量分布，其可以从光学头到基底提供。高斯分布可以应用于位置和光量分布，以计算每个光点的补偿模型。如果光头使用补偿模型沿着衬底的第一方向扫描，则可以计算对应于衬底的每个第一区域的第一累积光量。如果光头沿着使用补偿模型沿第二方向在第二方向上移动第一距离的第一方向进行扫描，则计算与每个第一区域重叠的每个第二区域对应的第二累积光量。可以基于第一和第二累积光量的相加的均匀性来确定重叠距离。

5. 发明申请

US20110230019A1 METHOD OF MANUFACTURING A THIN-FILM TRANSISTOR AND METHOD OF MANUFACTURING A DISPLAY SUBSTRATE USING THE SAME 有权
标题翻译：制造薄膜晶体管的方法和使用其制造显示器基板的方法
公开(公告)号：US20110230019A1
公开(公告)日：2011-09-22
申请号：US12900936
申请日：2010-10-08
申请人： Sang-Hyun YUN , Cha-Dong KIM , Jung-In PARK , Hi-Kuk LEE
发明人： Sang-Hyun YUN , Cha-Dong KIM , Jung-In PARK , Hi-Kuk LEE
IPC分类号： H01L21/336
CPC分类号： H01L27/1288 , H01L27/1214
摘要： An approach for patterning and etching without a mask is provided in a manufacturing a thin-film transistor, a gate electrode, a gate insulating layer, a semiconductor layer, an ohmic contact layer and source metal layer of a substrate. A first photoresist pattern including a first photo pattern and a second photo pattern is formed using a digital exposure device by generating a plurality of spot beams, the first photo pattern is formed to a first region of the base substrate and has a first thickness, and the second photo pattern is formed to a second region adjacent to the first region, and has a second thickness and a width in a range of about 50% to about 60% of a diameter of the spot beam. The source metal layer is patterned to form a source electrode and a drain electrode, and the source electrode and the drain electrode are spaced apart from each other in the first region of an active pattern.
摘要翻译：在制造薄膜晶体管，栅极电极，栅极绝缘层，半导体层，欧姆接触层和源极金属层的衬底的制造中提供了用于没有掩模的图案化和蚀刻的方法。使用数字曝光装置通过产生多个点光来形成包括第一照片图案和第二照片图案的第一光致抗蚀剂图案，第一照片图案形成于基底基板的第一区域并具有第一厚度，并且第二照片图案形成在与第一区域相邻的第二区域上，并且具有第二厚度和在点光束直径的约50％至约60％的范围内的宽度。图案化源极金属层以形成源电极和漏电极，并且源电极和漏电极在活性图案的第一区域中彼此间隔开。

6. 发明申请

US20120301684A1 PHOTOSENSITIVE FILM PATTERN AND METHOD FOR MANUFACTURING A PHOTOSENSITIVE FILM PATTERN 有权
标题翻译：感光膜图案和制造感光膜图案的方法
公开(公告)号：US20120301684A1
公开(公告)日：2012-11-29
申请号：US13309679
申请日：2011-12-02
申请人： Sang Hyun YUN , Cha-Dong KIM , Jung-In PARK , Hi-Kuk LEE , Su-Yeon SIM
发明人： Sang Hyun YUN , Cha-Dong KIM , Jung-In PARK , Hi-Kuk LEE , Su-Yeon SIM
IPC分类号： B32B3/00 , G03F7/20 , G03F7/24 , G03B27/54
CPC分类号： G03F1/36 , G03F7/70441
摘要： A method for manufacturing a photosensitive film pattern includes: forming a thin film on a substrate; forming a photosensitive film on the thin film; arranging an exposure apparatus including a photo-modulation element on the photosensitive film; exposing the photosensitive film using the exposure apparatus according to an exposure pattern of the photo-modulation element; and developing the exposed photosensitive film to form a photosensitive film pattern. The exposure pattern includes a main pattern of a quadrangular shape and a at least one assistance pattern positioned at a corner of the main pattern. The photosensitive film pattern has a quadrangular shape with a long edge and a short edge, and a corner with a curved surface having a curvature radius of 20% to 40% of a length of the short edge.
摘要翻译：感光膜图案的制造方法包括：在基板上形成薄膜; 在薄膜上形成感光膜; 在感光膜上布置包括光调制元件的曝光装置; 根据光调制元件的曝光图案，使用曝光装置曝光感光膜; 并显影曝光的感光膜以形成感光膜图案。曝光图案包括四边形的主图案和位于主图案的拐角处的至少一个辅助图案。感光膜图案具有长边缘和短边缘的四边形形状，以及具有曲率半径为短边长度的20％至40％的曲面的拐角。

7. 发明申请

US20110287360A1 PHOTORESIST COMPOSITION AND METHOD OF FORMING PATTERN BY USING THE SAME 有权
标题翻译：光电组合物及其使用形成图案的方法
公开(公告)号：US20110287360A1
公开(公告)日：2011-11-24
申请号：US13037212
申请日：2011-02-28
申请人： Hi-Kuk LEE , Sang-Hyun YUN , Cha-Dong KIM , Jung-In PARK , Deok-Man KANG , Youn-Suk KIM , Sae-Tae OH
发明人： Hi-Kuk LEE , Sang-Hyun YUN , Cha-Dong KIM , Jung-In PARK , Deok-Man KANG , Youn-Suk KIM , Sae-Tae OH
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： G03F7/30 , G03F7/022 , G03F7/0236 , H01L27/1288 , H01L29/41733
摘要： A photoresist composition is provided. The photoresist composition includes an alkali-soluble resin; a photosensitizer containing a first compound that contains a diazonaphthoquinone represented by Formula 1 and a second compound that contains a diazonaphthoquinone represented by Formula 2; and a solvent. andR1 is selected from the group consisting of a hydrogen atom, an alkyl group having 1 to 4 carbons, an alkenyl group having 2 to 4 carbons, a cycloalkyl group having 3 to 8 carbons, and an aryl group having 6 to 12 carbons, and R2 is selected from the group consisting of Cl, F, Br, and I.
摘要翻译：提供光致抗蚀剂组合物。光致抗蚀剂组合物包括碱溶性树脂; 含有含有由式1表示的重氮萘醌的第一化合物和含有由式2表示的重氮萘醌的第二化合物的光敏剂; 和溶剂。 R 1选自氢原子，碳原子数1〜4的烷基，碳原子数2〜4的烯基，碳原子数3〜8的环烷基，碳原子数6〜12的芳基，并且R 2选自Cl，F，Br和I.

8. 发明申请

US20120270142A1 PHOTOSENSITIVE COMPOSITION AND METHOD OF MANUFACTURING A SUBSTRATE FOR A DISPLAY DEVICE USING THE SAME 审中-公开
标题翻译：感光性组合物及使用该显影装置制造基板的方法
公开(公告)号：US20120270142A1
公开(公告)日：2012-10-25
申请号：US13358385
申请日：2012-01-25
申请人： Hi-Kuk LEE , Su-Yeon SIM , Sang-Hyun YUN , Cha-Dong KIM , Jung-In PARK , Byung-Uk KIM , Jin-Sun KIM , Tae-Hoon YEO , Hyoc-Min YOUN , Sang-Hoon LEE
发明人： Hi-Kuk LEE , Su-Yeon SIM , Sang-Hyun YUN , Cha-Dong KIM , Jung-In PARK , Byung-Uk KIM , Jin-Sun KIM , Tae-Hoon YEO , Hyoc-Min YOUN , Sang-Hoon LEE
IPC分类号： G03F7/20 , G03F7/031
CPC分类号： G03F7/031 , G03F7/0007 , G03F7/033 , G03F7/105 , G03F7/2053
摘要： A photosensitive composition and a method of manufacturing a substrate used for a display device are disclosed. The photosensitive composition includes an acrylic based copolymer, a photo-initiator, a photo-sensitizer and a solvent. Thus, a photosensitivity of the photosensitive composition for ultra violet light of a long wavelength may be improved.
摘要翻译：公开了一种光敏组合物和用于显示装置的基板的制造方法。光敏组合物包括丙烯酸类共聚物，光引发剂，光敏剂和溶剂。因此，可以提高光敏组合物对长波长紫外线的光敏性。

9. 发明申请

US20110171581A1 PHOTORESIST COMPOSTION AND METHOD OF MANUFACTURING ARRAY SUBSTRATE USING THE SAME 有权
标题翻译：光刻胶组合物及使用其制造阵列基板的方法
公开(公告)号：US20110171581A1
公开(公告)日：2011-07-14
申请号：US13050522
申请日：2011-03-17
申请人： Hi-Kuk LEE , Sang-Hyun YUN , Min-Soo LEE , Deok-Man KANG , Sae-Tae OH , Jae-Young CHOI
发明人： Hi-Kuk LEE , Sang-Hyun YUN , Min-Soo LEE , Deok-Man KANG , Sae-Tae OH , Jae-Young CHOI
IPC分类号： G03F7/004
CPC分类号： H01L27/1288 , G03F7/0233 , H01L27/1214
摘要： A photoresist composition includes a binder resin, a photo acid generator, an acryl resin having four different types of monomers, and a solvent.
摘要翻译：光致抗蚀剂组合物包括粘合剂树脂，光酸产生剂，具有四种不同类型的单体的丙烯酸树脂和溶剂。

10. 发明申请

US20090227058A1 PHOTORESIST COMPOSITION AND METHOD OF MANUFACTURING ARRAY SUBSTRATE USING THE SAME 审中-公开
标题翻译：光电组合物及使用其制造阵列基板的方法
公开(公告)号：US20090227058A1
公开(公告)日：2009-09-10
申请号：US12347202
申请日：2008-12-31
申请人： Jeong-Min PARK , Doo-Hee JUNG , Hi-Kuk LEE , Byung-Uk KIM , Dong-Min KIM
发明人： Jeong-Min PARK , Doo-Hee JUNG , Hi-Kuk LEE , Byung-Uk KIM , Dong-Min KIM
IPC分类号： H01L21/027 , G03F7/004
CPC分类号： G03F7/0236
摘要： A photoresist composition includes; a novolac resin prepared from a phenol compound, wherein the m-cresol constitutes about 70% to about 85% by weight of the weight of the phenol compound, a diazide compound, and an organic solvent.
摘要翻译：光致抗蚀剂组合物包括：由酚化合物制备的酚醛清漆树脂，其中间甲酚构成酚化合物，重氮化合物和有机溶剂的重量的约70重量％至约85重量％。

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