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    • 5. 发明授权
    • Method of fabricating thin film transistor substrate and negative photoresist composition used therein
    • 制造薄膜晶体管基板及其中使用的负型光致抗蚀剂组合物的方法
    • US08257905B2
    • 2012-09-04
    • US12685545
    • 2010-01-11
    • Yeong-Beom LeeHi-Kuk LeeByung-Uk KimHyoc-Min YounKi-Hyuk Koo
    • Yeong-Beom LeeHi-Kuk LeeByung-Uk KimHyoc-Min YounKi-Hyuk Koo
    • G03F7/004G03F7/30
    • H01L27/1288G03F7/0045G03F7/0382G03F7/40H01L27/1214
    • A method of fabricating a thin film transistor substrate and a negative photoresist composition used therein are provided, which can reduce pattern inferiority. The method of fabricating a thin film transistor substrate includes forming a conductive film composed of a conductive material on a substrate, forming an etch pattern composed of a negative photoresist composition on the conductive film, and forming a conductive pattern by etching the conductive film using the etch pattern as an etching mask, wherein the negative photoresist composition includes 10-50 parts by weight of novolak resin including a hydroxyl group that is soluble in an alkali developing solution, 0.5-10 parts by weight of a first photo acid generator represented by the following formula (1), 0.5-10 parts by weight of a second photo acid generator represented by the following formula (2), 1-20 parts by weight of a cross-linking agent, and 10-90 parts by weight of a solvent:
    • 提供了制造其中使用的薄膜晶体管基板和负型光致抗蚀剂组合物的方法,其可以降低图案劣化。 制造薄膜晶体管基板的方法包括在基板上形成由导电材料构成的导电膜,在导电膜上形成由负性光致抗蚀剂组合物构成的蚀刻图案,并使用该导电膜蚀刻导电膜形成导电图案 蚀刻图案作为蚀刻掩模,其中负性光致抗蚀剂组合物包含10-50重量份的包含可溶于碱显影液的羟基的酚醛清漆树脂,0.5-10重量份由 按照下式(1),将0.5-10重量份由下式(2)表示的第二光酸反应产物,1-20重量份的交联剂和10-90重量份的溶剂 :