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1. 发明授权

US5825046A Composite memory material comprising a mixture of phase-change memory material and dielectric material 失效
标题翻译：复合记忆材料包括相变记忆材料和电介质材料的混合物
公开(公告)号：US5825046A
公开(公告)日：1998-10-20
申请号：US739080
申请日：1996-10-28
申请人： Wolodymyr Czubatyj , Stanford R. Ovshinsky , David A. Strand , Patrick Klersy , Sergey Kostylev , Boil Pashmakov
发明人： Wolodymyr Czubatyj , Stanford R. Ovshinsky , David A. Strand , Patrick Klersy , Sergey Kostylev , Boil Pashmakov
IPC分类号： H01L27/10 , G11C16/02 , H01L27/105 , H01L45/00 , H01L47/00
CPC分类号： H01L45/06 , G11C13/0004 , H01L45/1233 , H01L45/1246 , H01L45/14 , H01L45/142 , H01L45/144 , H01L45/145 , H01L45/146 , H01L45/1625 , H01L45/1641 , G11C2213/35 , G11C2213/51 , G11C2213/72
摘要： A composite memory material comprising a mixture of active phase-change memory material and inactive dielectric material. The phase-change material includes one or more elements selected from the group consisting of Te, Se, Ge, Sb, Bi, Pb, Sn, As, S, Si, P, O and mixtures or alloys thereof. A single cell memory element comprising the aforementioned composite memory material, and a pair of spacedly disposed contacts.
摘要翻译：一种复合记忆材料，包括有源相变记忆材料和非活性介电材料的混合物。相变材料包括选自Te，Se，Ge，Sb，Bi，Pb，Sn，As，S，Si，P，O及其混合物或合金中的一种或多种元素。包括上述复合存储器材料的单个单元存储元件和一对间隔设置的触点。

2. 发明授权

US5933365A Memory element with energy control mechanism 失效
标题翻译：具有能量控制机制的记忆元件
公开(公告)号：US5933365A
公开(公告)日：1999-08-03
申请号：US878870
申请日：1997-06-19
申请人： Patrick Klersy , Boil Pashmakov , Wolodymyr Czubatyj , Sergey Kostylev , Stanford R. Ovshinsky
发明人： Patrick Klersy , Boil Pashmakov , Wolodymyr Czubatyj , Sergey Kostylev , Stanford R. Ovshinsky
IPC分类号： G11C17/00 , G11C11/56 , G11C16/02 , G11C19/08 , H01L27/24 , H01L45/00 , H01L47/00 , G11C11/00
CPC分类号： H01L45/1293 , G11C11/56 , G11C11/5678 , G11C13/0004 , H01L27/2463 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/1616 , H01L45/1625
摘要： An electrically operated, directly overwritable memory element comprising a volume of memory material having at least two electrical resistance values. The volume of memory material can be set to one of the resistance values in response to a selected electrical input signal without the need to be set to a specific starting or erased resistance value. The memory element includes resistive layers for controlling the distribution of electrical energy within the memory material, heating layers for transferring heat energy into the memory material, and thermal insulation layers for reducing the loss of heat energy from the memory material.
摘要翻译：一种电操作的直接可覆写的存储元件，包括具有至少两个电阻值的一定体积的存储材料。可以响应于所选择的电输入信号将存储器材料的体积设置为电阻值中的一个，而不需要将其设置为特定的起始或擦除电阻值。存储元件包括用于控制存储材料内的电能分布的电阻层，用于将热能传递到存储材料中的加热层，以及用于减少来自存储材料的热能损失的绝热层。

3. 发明申请

US20090057645A1 Memory element with improved contacts 审中-公开
标题翻译：记忆元素改善了接触
公开(公告)号：US20090057645A1
公开(公告)日：2009-03-05
申请号：US12290353
申请日：2008-10-30
申请人： Sergey A. Kostylev , Stanford R. Ovshinsky , Wolodymyr Czubatyj , Patrick Klersy , Boil Pashmakov
发明人： Sergey A. Kostylev , Stanford R. Ovshinsky , Wolodymyr Czubatyj , Patrick Klersy , Boil Pashmakov
IPC分类号： H01L45/00
CPC分类号： G11C11/56 , G11C11/5678 , G11C13/0004 , H01L27/2436 , H01L27/2472 , H01L45/06 , H01L45/122 , H01L45/126 , H01L45/144 , H01L45/1675 , H01L45/1683
摘要： A phase-change memory element comprising a phase-change memory material, a first electrical contact and a second electrical contact. At least one of the electrical contacts having a sidewall electrically coupled to the memory material.
摘要翻译：一种相变存储元件，包括相变存储器材料，第一电触头和第二电触头。电触点中的至少一个具有电耦合到存储器材料的侧壁。

4. 发明授权

US07473574B2 Memory element with improved contacts 有权
公开(公告)号：US07473574B2
公开(公告)日：2009-01-06
申请号：US11394433
申请日：2006-04-01
申请人： Sergey A. Kostylev , Stanford R. Ovshinsky , Wolodymyr Czubatyj , Patrick Klersy , Boil Pashmakov
发明人： Sergey A. Kostylev , Stanford R. Ovshinsky , Wolodymyr Czubatyj , Patrick Klersy , Boil Pashmakov
IPC分类号： H01L21/00
CPC分类号： G11C11/56 , G11C11/5678 , G11C13/0004 , H01L27/2436 , H01L27/2472 , H01L45/06 , H01L45/122 , H01L45/126 , H01L45/144 , H01L45/1675 , H01L45/1683
摘要： A phase-change memory element comprising a phase-change memory material, a first electrical contact and a second electrical contact. At least one of the electrical contacts having a sidewall electrically coupled to the memory material.

5. 发明申请

US20060110846A1 Electrically programmable memory element with improved contacts 审中-公开
标题翻译：具有改进触点的电可编程存储元件
公开(公告)号：US20060110846A1
公开(公告)日：2006-05-25
申请号：US11287833
申请日：2005-11-28
申请人： Tyler Lowrey , Stanford Ovshinsky , Guy Wicker , Patrick Klersy , Boil Pashmakov , Wolodymyr Czubatyj , Sergey Kostylev
发明人： Tyler Lowrey , Stanford Ovshinsky , Guy Wicker , Patrick Klersy , Boil Pashmakov , Wolodymyr Czubatyj , Sergey Kostylev
IPC分类号： H01L21/00
CPC分类号： G11C11/5678 , G11C11/56 , G11C13/0004 , H01L27/2436 , H01L27/2472 , H01L45/06 , H01L45/122 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/16 , H01L45/1675
摘要： A method of making an electrically programmable memory element, comprising: providing a conductive sidewall spacer; and forming a phase-change material in electrical communication with said conductive sidewall spacer.
摘要翻译：一种制造电可编程存储元件的方法，包括：提供导电侧壁间隔物; 以及形成与所述导电侧壁间隔物电连通的相变材料。

6. 发明申请

US20070235709A1 Memory element with improved contacts 有权
标题翻译：记忆元素改善了接触
公开(公告)号：US20070235709A1
公开(公告)日：2007-10-11
申请号：US11394433
申请日：2006-04-01
申请人： Sergey Kostylev , Stanford Ovshinsky , Wolodymyr Czubatyj , Patrick Klersy , Boil Pashmakov
发明人： Sergey Kostylev , Stanford Ovshinsky , Wolodymyr Czubatyj , Patrick Klersy , Boil Pashmakov
IPC分类号： H01L47/00 , H01L21/00
CPC分类号： G11C11/56 , G11C11/5678 , G11C13/0004 , H01L27/2436 , H01L27/2472 , H01L45/06 , H01L45/122 , H01L45/126 , H01L45/144 , H01L45/1675 , H01L45/1683
摘要： A phase-change memory element comprising a phase-change memory material, a first electrical contact and a second electrical contact. At least one of the electrical contacts having a sidewall electrically coupled to the memory material.
摘要翻译：一种相变存储元件，包括相变存储器材料，第一电触头和第二电触头。电触点中的至少一个具有电耦合到存储器材料的侧壁。

7. 发明授权

US5534711A Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom 失效
标题翻译：电可擦除的直接可重写的多单元单元存储元件和由其制造的阵列
公开(公告)号：US5534711A
公开(公告)日：1996-07-09
申请号：US423484
申请日：1995-04-19
申请人： Stanford R. Ovshinsky , David A. Strand , Wolodymyr Czubatyj , Patrick Klersy
发明人： Stanford R. Ovshinsky , David A. Strand , Wolodymyr Czubatyj , Patrick Klersy
IPC分类号： G11C11/56 , G11C16/02 , H01L27/24 , H01L45/00
CPC分类号： G11C13/0004 , G11C11/56 , G11C11/5678 , H01L27/2409 , H01L27/2463 , H01L45/06 , H01L45/12 , H01L45/1233 , H01L45/144 , G11C13/04 , G11C2213/72
摘要： The present invention comprises an electrically operated, directly overwritable, multibit, single-cell memory element. The memory element includes a volume of memory material which defines the single cell memory element. The memory material is characterized by: (1) a large dynamic range of electrical resistance values; and (2) the ability to be set at one of a plurality of resistance values within said dynamic range in response to selected electrical input signals so as to provide said single cell with multibit storage capabilities. The memory element also includes a pair of spacedly disposed contacts for supplying the electrical input signal to set the memory material to a selected resistance value within the dynamic range. At least a filamentary portion of the singIe cell memory element being setable, by the selected electrical signal to any resistance value in said dynamic range, regardless of the previous resistance value of said material. The memory element further includes a filamentary portion controlling means disposed between the volume of memory material and at least one of the spacedly disposed contacts. The controlling means defining the size and position of the filamentary portion during electrical formation of the memory element and limiting the size and confining the location of the filamentary portion during use of the memory element, thereby providing for a high current density within the filamentary portion of the single cell memory element upon input of a very low total current electrical signal to the spacedly disposed contacts.
摘要翻译：本发明包括电操作的直接覆盖的多位单个单元存储元件。存储元件包括限定单个单元存储元件的一定量的存储器材料。记忆材料的特征在于：（1）电阻值的大动态范围; 以及（2）响应于所选择的电输入信号在所述动态范围内被设置为多个电阻值之一的能力，以便向所述单个单元提供多位存储能力。存储元件还包括一对间隔设置的触点，用于提供电输入信号以将存储器材料设置在动态范围内的所选电阻值。所述单元存储元件的至少一个细长部分可通过所选择的电信号被设置成所述动态范围内的任何电阻值，而与所述材料的先前电阻值无关。存储元件还包括设置在存储器材料体积与间隔设置的触点中的至少一个之间的丝状部分控制装置。控制装置在存储元件的电气形成期间限定丝状部分的尺寸和位置，并且在存储元件的使用期间限制尺寸并限制丝状部分的位置，由此提供丝网部分内的高电流密度当输入非常低的总电流电信号到间隔布置的触点时，单个单元存储元件。

8. 发明申请

US20120115274A1 Plasma Deposition of Amorphous Semiconductors at Microwave Frequencies 审中-公开
标题翻译：微波频率下非晶半导体的等离子体沉积
公开(公告)号：US20120115274A1
公开(公告)日：2012-05-10
申请号：US13355541
申请日：2012-01-22
申请人： Stanford R Ovshinsky , David Strand , Patrick Klersy , Boil Pashmakov
发明人： Stanford R Ovshinsky , David Strand , Patrick Klersy , Boil Pashmakov
IPC分类号： H01L31/18
CPC分类号： C23C16/511 , C23C16/24 , C23C16/545 , H01L21/02425 , H01L21/02532 , H01L21/02592 , H01L21/0262
摘要： Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus inhibits deposition on windows or other microwave transmission elements that couple microwave energy to deposition species. The apparatus includes a microwave applicator with conduits passing therethrough that carry deposition species. The applicator transfers microwave energy to the deposition species to transform them to a reactive state conducive to formation of a thin film material. The conduits physically isolate deposition species that would react to form a thin film material at the point of microwave power transfer. The deposition species are separately energized and swept away from the point of power transfer to prevent thin film deposition. The invention allows for the ultrafast formation of silicon-containing amorphous semiconductors that exhibit high mobility, low porosity, little or no Staebler-Wronski degradation, and low defect concentration.
摘要翻译：微波等离子体沉积薄膜光伏材料的设备和方法。该装置抑制在将微波能量耦合到沉积物质的窗口或其它微波传输元件上的沉积。该装置包括带有通过其的导管的微波施加器，其携带沉积物质。施加器将微波能量传递到沉积物质以将它们转变成有助于形成薄膜材料的反应状态。导管物理隔离在微波功率传递点反应以形成薄膜材料的沉积物质。沉积物质分开通电并从功率传递点扫除，以防止薄膜沉积。本发明允许超快速地形成显示高迁移率，低孔隙率，很少或没有Staebler-Wronski降解和低缺陷浓度的含硅非晶半导体。

9. 发明申请

US20120040493A1 PLASMA DEPOSITION OF AMORPHOUS SEMICONDUCTORS AT MICROWAVE FREQUENCIES 失效
标题翻译：在微波频率下等离子体沉积非晶半导体
公开(公告)号：US20120040493A1
公开(公告)日：2012-02-16
申请号：US12855645
申请日：2010-08-12
申请人： Stanford R. Ovshinsky , David Strand , Patrick Klersy , Boil Pashmakov
发明人： Stanford R. Ovshinsky , David Strand , Patrick Klersy , Boil Pashmakov
IPC分类号： H01L31/18
CPC分类号： C23C16/511 , C23C16/24 , C23C16/545 , H01L21/02425 , H01L21/02532 , H01L21/02592 , H01L21/0262
摘要： Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus avoids deposition on windows or other microwave transmission elements that couple microwave energy to deposition species. The apparatus includes a microwave applicator with conduits passing therethrough that carry deposition species. The applicator transfers microwave energy to the deposition species to transform them to a reactive state conducive to formation of a thin film material. The conduits physically isolate deposition species that would react to form a thin film material at the point of microwave power transfer. The deposition species are separately energized and swept away from the point of power transfer to prevent thin film deposition. The invention allows for the ultrafast formation of silicon-containing amorphous semiconductors that exhibit high mobility, low porosity, little or no Staebler-Wronski degradation, and low defect concentration.
摘要翻译：微波等离子体沉积薄膜光伏材料的设备和方法。该装置避免了将微波能量耦合到沉积物质的窗户或其他微波传输元件上的沉积。该装置包括带有通过其的导管的微波施加器，其携带沉积物质。施加器将微波能量传递到沉积物质以将它们转变成有助于形成薄膜材料的反应状态。导管物理隔离在微波功率传递点反应以形成薄膜材料的沉积物质。沉积物质分开通电并从功率传递点扫除，以防止薄膜沉积。本发明允许超快速地形成显示高迁移率，低孔隙率，很少或没有Staebler-Wronski降解和低缺陷浓度的含硅非晶半导体。

10. 发明申请

US20120040518A1 Plasma Deposition of Amorphous Semiconductors at Microwave Frequencies 审中-公开
公开(公告)号：US20120040518A1
公开(公告)日：2012-02-16
申请号：US13284912
申请日：2011-10-30
申请人： Stanford R. Ovshinsky , David Strand , Patrick Klersy , Boil Pashmakov
发明人： Stanford R. Ovshinsky , David Strand , Patrick Klersy , Boil Pashmakov
IPC分类号： H01L21/20
CPC分类号： C23C16/452 , C23C16/24 , C23C16/511 , H01J37/32192 , H01J37/3244
摘要： Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus inhibits deposition on windows or other microwave transmission elements that couple microwave energy to deposition species. The apparatus includes a microwave applicator with conduits passing therethrough that carry deposition species. The applicator transfers microwave energy to the deposition species to transform them to a reactive state conducive to formation of a thin film material. The conduits physically isolate deposition species that would react to form a thin film material at the point of microwave power transfer. The deposition species are separately energized and swept away from the point of power transfer to prevent thin film deposition. The invention allows for the ultrafast formation of silicon-containing amorphous semiconductors that exhibit high mobility, low porosity, little or no Staebler-Wronski degradation, and low defect concentration.

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