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1. 发明申请

US20060110846A1 Electrically programmable memory element with improved contacts 审中-公开
标题翻译：具有改进触点的电可编程存储元件
公开(公告)号：US20060110846A1
公开(公告)日：2006-05-25
申请号：US11287833
申请日：2005-11-28
申请人： Tyler Lowrey , Stanford Ovshinsky , Guy Wicker , Patrick Klersy , Boil Pashmakov , Wolodymyr Czubatyj , Sergey Kostylev
发明人： Tyler Lowrey , Stanford Ovshinsky , Guy Wicker , Patrick Klersy , Boil Pashmakov , Wolodymyr Czubatyj , Sergey Kostylev
IPC分类号： H01L21/00
CPC分类号： G11C11/5678 , G11C11/56 , G11C13/0004 , H01L27/2436 , H01L27/2472 , H01L45/06 , H01L45/122 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/16 , H01L45/1675
摘要： A method of making an electrically programmable memory element, comprising: providing a conductive sidewall spacer; and forming a phase-change material in electrical communication with said conductive sidewall spacer.
摘要翻译：一种制造电可编程存储元件的方法，包括：提供导电侧壁间隔物; 以及形成与所述导电侧壁间隔物电连通的相变材料。

2. 发明申请

US20070235709A1 Memory element with improved contacts 有权
标题翻译：记忆元素改善了接触
公开(公告)号：US20070235709A1
公开(公告)日：2007-10-11
申请号：US11394433
申请日：2006-04-01
申请人： Sergey Kostylev , Stanford Ovshinsky , Wolodymyr Czubatyj , Patrick Klersy , Boil Pashmakov
发明人： Sergey Kostylev , Stanford Ovshinsky , Wolodymyr Czubatyj , Patrick Klersy , Boil Pashmakov
IPC分类号： H01L47/00 , H01L21/00
CPC分类号： G11C11/56 , G11C11/5678 , G11C13/0004 , H01L27/2436 , H01L27/2472 , H01L45/06 , H01L45/122 , H01L45/126 , H01L45/144 , H01L45/1675 , H01L45/1683
摘要： A phase-change memory element comprising a phase-change memory material, a first electrical contact and a second electrical contact. At least one of the electrical contacts having a sidewall electrically coupled to the memory material.
摘要翻译：一种相变存储元件，包括相变存储器材料，第一电触头和第二电触头。电触点中的至少一个具有电耦合到存储器材料的侧壁。

3. 发明授权

US5933365A Memory element with energy control mechanism 失效
标题翻译：具有能量控制机制的记忆元件
公开(公告)号：US5933365A
公开(公告)日：1999-08-03
申请号：US878870
申请日：1997-06-19
申请人： Patrick Klersy , Boil Pashmakov , Wolodymyr Czubatyj , Sergey Kostylev , Stanford R. Ovshinsky
发明人： Patrick Klersy , Boil Pashmakov , Wolodymyr Czubatyj , Sergey Kostylev , Stanford R. Ovshinsky
IPC分类号： G11C17/00 , G11C11/56 , G11C16/02 , G11C19/08 , H01L27/24 , H01L45/00 , H01L47/00 , G11C11/00
CPC分类号： H01L45/1293 , G11C11/56 , G11C11/5678 , G11C13/0004 , H01L27/2463 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/1616 , H01L45/1625
摘要： An electrically operated, directly overwritable memory element comprising a volume of memory material having at least two electrical resistance values. The volume of memory material can be set to one of the resistance values in response to a selected electrical input signal without the need to be set to a specific starting or erased resistance value. The memory element includes resistive layers for controlling the distribution of electrical energy within the memory material, heating layers for transferring heat energy into the memory material, and thermal insulation layers for reducing the loss of heat energy from the memory material.
摘要翻译：一种电操作的直接可覆写的存储元件，包括具有至少两个电阻值的一定体积的存储材料。可以响应于所选择的电输入信号将存储器材料的体积设置为电阻值中的一个，而不需要将其设置为特定的起始或擦除电阻值。存储元件包括用于控制存储材料内的电能分布的电阻层，用于将热能传递到存储材料中的加热层，以及用于减少来自存储材料的热能损失的绝热层。

4. 发明授权

US5825046A Composite memory material comprising a mixture of phase-change memory material and dielectric material 失效
标题翻译：复合记忆材料包括相变记忆材料和电介质材料的混合物
公开(公告)号：US5825046A
公开(公告)日：1998-10-20
申请号：US739080
申请日：1996-10-28
申请人： Wolodymyr Czubatyj , Stanford R. Ovshinsky , David A. Strand , Patrick Klersy , Sergey Kostylev , Boil Pashmakov
发明人： Wolodymyr Czubatyj , Stanford R. Ovshinsky , David A. Strand , Patrick Klersy , Sergey Kostylev , Boil Pashmakov
IPC分类号： H01L27/10 , G11C16/02 , H01L27/105 , H01L45/00 , H01L47/00
CPC分类号： H01L45/06 , G11C13/0004 , H01L45/1233 , H01L45/1246 , H01L45/14 , H01L45/142 , H01L45/144 , H01L45/145 , H01L45/146 , H01L45/1625 , H01L45/1641 , G11C2213/35 , G11C2213/51 , G11C2213/72
摘要： A composite memory material comprising a mixture of active phase-change memory material and inactive dielectric material. The phase-change material includes one or more elements selected from the group consisting of Te, Se, Ge, Sb, Bi, Pb, Sn, As, S, Si, P, O and mixtures or alloys thereof. A single cell memory element comprising the aforementioned composite memory material, and a pair of spacedly disposed contacts.
摘要翻译：一种复合记忆材料，包括有源相变记忆材料和非活性介电材料的混合物。相变材料包括选自Te，Se，Ge，Sb，Bi，Pb，Sn，As，S，Si，P，O及其混合物或合金中的一种或多种元素。包括上述复合存储器材料的单个单元存储元件和一对间隔设置的触点。

5. 发明授权

US6087674A Memory element with memory material comprising phase-change material and dielectric material 失效
标题翻译：具有记忆材料的存储元件包括相变材料和电介质材料
公开(公告)号：US6087674A
公开(公告)日：2000-07-11
申请号：US63174
申请日：1998-04-20
申请人： Standford R. Ovshinsky , Wolodymyr Czubatyj , David A. Strand , Patrick J. Klersy , Sergey Kostylev , Boil Pashmakov
发明人： Standford R. Ovshinsky , Wolodymyr Czubatyj , David A. Strand , Patrick J. Klersy , Sergey Kostylev , Boil Pashmakov
IPC分类号： H01L27/10 , G11C16/02 , H01L27/105 , H01L45/00 , H01L47/00
CPC分类号： G11C13/0004 , H01L45/06 , H01L45/1233 , H01L45/1246 , H01L45/1273 , H01L45/144 , G11C2213/35 , G11C2213/51 , G11C2213/52 , G11C2213/72
摘要： An electrically operated, single cell memory element comprising: a volume of memory material defining a single-cell memory element, the memory material comprising a heterogeneous mixture of a phase-change material and a dielectric material; and means for delivering an electrical signal to at least a portion of the volume of memory material. An electrically operated, single-cell memory element comprising: a volume of memory material defining the single-cell memory element, the memory material comprising a phase-change material and a dielectric material where the phase-change material has a plurality of detectable resistivity values and can be set directly to one of the resistivity values without the need to be set to a specific starting or erased resistivity value, regardless of the previous resistivity value of the material, in response to an electrical signal; and means for delivering the electrical signal to at least a portion of the volume of memory material.
摘要翻译：一种电操作的单个单元存储器元件，包括：一定量单个存储单元的存储器材料的体积，所述存储器材料包括相变材料和电介质材料的不均匀混合物; 以及用于将电信号传送到所述存储器材料的体积的至少一部分的装置。一种电操作的单电池存储元件，包括：限定单个单元存储元件的存储器材料的量，所述存储器材料包括相变材料和介电材料，其中所述相变材料具有多个可检测的电阻率值并且可以直接设置为电阻率值之一，而不需要根据材料的电阻率值将电阻值设定为特定的起始或擦除电阻率值; 以及用于将电信号传送到存储材料体积的至少一部分的装置。

6. 发明授权

US07902536B2 Memory device and method of making same 有权
标题翻译：存储器件及其制作方法
公开(公告)号：US07902536B2
公开(公告)日：2011-03-08
申请号：US11495927
申请日：2006-07-28
申请人： Wolodymyr Czubatyj , Tyler Lowrey , Sergey Kostylev
发明人： Wolodymyr Czubatyj , Tyler Lowrey , Sergey Kostylev
IPC分类号： H01L29/02 , H01L47/00
CPC分类号： G11C11/5678 , G11C11/56 , G11C13/0004 , H01L45/06 , H01L45/122 , H01L45/143 , H01L45/144 , H01L45/148
摘要： A radial memory device includes a phase-change material, a first electrode in electrical communication with the phase-change material, the first electrode having a substantially planar first area of electrical communication with the phase-change material. The radial memory device also includes a second electrode in electrical communication with the phase-change material, the second electrode having a second area of electrical communication with the phase-change material, the second area being laterally spacedly disposed from the first area and substantially circumscribing the first area.Further, a method of making a memory device is disclosed. The steps include depositing a first electrode, depositing a first insulator, configuring the first insulator to define a first opening. The first opening provides for a generally planar first contact of the first electrode. The method further including the steps of depositing a phase-change material, depositing a second insulator, configuring the second insulator, depositing a second electrode having a second contact laterally displaced from said first contact, and configuring said second electrode.
摘要翻译：径向存储器件包括相变材料，与相变材料电连通的第一电极，第一电极具有与相变材料电连通的基本平坦的第一区域。所述径向存储装置还包括与所述相变材料电连通的第二电极，所述第二电极具有与所述相变材料电连通的第二区域，所述第二区域与所述第一区域横向间隔设置并且基本上限定第一个区域。此外，公开了一种制造存储器件的方法。这些步骤包括沉积第一电极，沉积第一绝缘体，构成第一绝缘体以限定第一开口。第一开口提供第一电极的大致平面的第一接触。该方法还包括以下步骤：沉积相变材料，沉积第二绝缘体，构成第二绝缘体，沉积具有从所述第一触点横向移位的第二触点的第二电极，以及配置所述第二电极。

7. 发明申请

US20080023685A1 MEMORY DEVICE AND METHOD OF MAKING SAME 审中-公开
标题翻译：存储器件及其制造方法
公开(公告)号：US20080023685A1
公开(公告)日：2008-01-31
申请号：US11743459
申请日：2007-05-02
申请人： Wolodymyr Czubatyj , Tyler Lowrey , Sergey Kostylev , Regino Sandoval
发明人： Wolodymyr Czubatyj , Tyler Lowrey , Sergey Kostylev , Regino Sandoval
IPC分类号： H01L47/00
CPC分类号： H01L45/148 , H01L45/06 , H01L45/122 , H01L45/1233 , H01L45/1246 , H01L45/143 , H01L45/144
摘要： A memory device includes a phase-change material and a first electrode in electrical communication with the phase-change material. Also included is a second electrode in electrical communication with the phase-change material and a dielectric layer. The dielectric layer is disposed between the first electrode and the second electrode. The dielectric layer has an opening therethrough. The phase-change material is disposed on both sides of the dielectric layer and within the opening. Electrical communication within the device is by means of virtual contacts.
摘要翻译：存储器件包括相变材料和与相变材料电连通的第一电极。还包括与相变材料和介电层电连通的第二电极。介电层设置在第一电极和第二电极之间。电介质层具有通过其的开口。相变材料设置在电介质层的两侧和开口内。设备内的电气通信是通过虚拟接触。

8. 发明申请

US20050077515A1 Programmable resistance memory element with threshold switching material 有权
标题翻译：具有阈值开关材料的可编程电阻存储元件
公开(公告)号：US20050077515A1
公开(公告)日：2005-04-14
申请号：US10681781
申请日：2003-10-08
申请人： Sergey Kostylev , Wolodymyr Czubatyj
发明人： Sergey Kostylev , Wolodymyr Czubatyj
IPC分类号： H01L45/00 , H01L29/06
CPC分类号： H01L45/04 , H01L45/00 , H01L45/06 , H01L45/1233 , H01L45/141 , H01L45/144
摘要： A programmable resistance memory element comprising a dielectric material between a programmable resistance memory material and a threshold switching material.
摘要翻译：一种可编程电阻存储元件，包括在可编程电阻存储器材料和阈值开关材料之间的介电材料。

9. 发明申请

US20090298222A1 Method for manufacturing Chalcogenide devices 审中-公开
标题翻译：制造硫族化物装置的方法
公开(公告)号：US20090298222A1
公开(公告)日：2009-12-03
申请号：US12154952
申请日：2008-05-28
申请人： Tyler Lowrey , Jeff Fournier , Robert Nuss , Carl Schell , Guy Wicker , Jim Ricker , James Reed , Ed Spall , Sergey Kostylev , Wolodymyr Czubatyj , Regino Sandoval
发明人： Tyler Lowrey , Jeff Fournier , Robert Nuss , Carl Schell , Guy Wicker , Jim Ricker , James Reed , Ed Spall , Sergey Kostylev , Wolodymyr Czubatyj , Regino Sandoval
IPC分类号： H01L45/00
CPC分类号： H01L45/06 , H01L45/04 , H01L45/144 , H01L45/1608
摘要： A method of chalcogenide device formation includes treatment of the surface upon which the chalcogenide material is deposited. The treatment reduces or eliminates native oxides and other contaminants from the surface, thereby increasing the adhesion of the chalcogenide layer to the treated surface, eliminating voids between the chalcogenide layer and deposition surface and reducing the degradation of chalcogenide material due to the migration of contaminants into the chalcogenide.
摘要翻译：硫族化物器件形成的方法包括处理沉积硫族化物材料的表面。该处理减少或消除了表面的天然氧化物和其他污染物，从而增加了硫属化物层与处理过的表面的粘附性，消除了硫属化物层与沉积表面之间的空隙，并且由于污染物的迁移而降低了硫族化物材料的降解硫族化物。

10. 发明申请

US20070034850A1 Chalcogenide devices incorporating chalcogenide materials having reduced germanium or telluruim content 审中-公开
标题翻译：含有具有降低的锗或碲化物含量的硫族化物材料的硫族化物装置
公开(公告)号：US20070034850A1
公开(公告)日：2007-02-15
申请号：US11200466
申请日：2005-08-09
申请人： Sergey Kostylev , Tyler Lowrey , Guy Wicker , Wolodymyr Czubatyj
发明人： Sergey Kostylev , Tyler Lowrey , Guy Wicker , Wolodymyr Czubatyj
IPC分类号： H01L47/00
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1625
摘要： A chalcogenide material and chalcogenide memory device having less stringent requirements for formation, improved thermal stability and/or faster operation. The chalcogenide materials include materials comprising Ge, Sb and Te in which the Ge and/or Te content is lean relative to the commonly used Ge2Sb2Te5 chalcogenide composition. Electrical devices containing the instant chalcogenide materials show a rapid convergence of the set resistance during cycles of setting and resetting the device from its as-fabricated state, thus leading to a reduced or eliminated need to subject the device to post-fabrication electrical formation prior to end-use operation. Improved thermal stability is manifested in terms of prolonged stability of the resistance of the device at elevated temperatures, which leads to an inhibition of thermally induced setting of the reset state in the device. Significant improvements in the 10 year data retention temperature are demonstrated. Faster device operation is achieved through an increased speed of crystallization, which acts to shorten the time required to transform the chalcogenide material from its reset state to its set state in an electrical memory device.
摘要翻译：一种硫族化物材料和硫族化物记忆装置，其对形成，改进的热稳定性和/或更快的操作要求不太严格。硫属化物材料包括Ge，Sb和Te的材料，其中Ge和/或Te含量相对于通常使用的Ge 2 Sb 2 Te 5是稀的硫族化合物组合物。包含瞬时硫族化物材料的电气装置显示设定循环期间的设定电阻的快速收敛以及将器件从其制造状态复位，从而导致减少或消除了将器件置于后制造电形成之前最终使用操作。改进的热稳定性表现在器件在升高的温度下的电阻的延长的稳定性，这导致抑制器件中复位状态的热诱导设置。展示了10年数据保存温度的显着改进。通过提高结晶速度实现更快的器件操作，其用于缩短将硫族化物材料从其复位状态转换到其在电存储器件中的设定状态所需的时间。

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