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1. 发明授权

US5534711A Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom 失效
标题翻译：电可擦除的直接可重写的多单元单元存储元件和由其制造的阵列
公开(公告)号：US5534711A
公开(公告)日：1996-07-09
申请号：US423484
申请日：1995-04-19
申请人： Stanford R. Ovshinsky , David A. Strand , Wolodymyr Czubatyj , Patrick Klersy
发明人： Stanford R. Ovshinsky , David A. Strand , Wolodymyr Czubatyj , Patrick Klersy
IPC分类号： G11C11/56 , G11C16/02 , H01L27/24 , H01L45/00
CPC分类号： G11C13/0004 , G11C11/56 , G11C11/5678 , H01L27/2409 , H01L27/2463 , H01L45/06 , H01L45/12 , H01L45/1233 , H01L45/144 , G11C13/04 , G11C2213/72
摘要： The present invention comprises an electrically operated, directly overwritable, multibit, single-cell memory element. The memory element includes a volume of memory material which defines the single cell memory element. The memory material is characterized by: (1) a large dynamic range of electrical resistance values; and (2) the ability to be set at one of a plurality of resistance values within said dynamic range in response to selected electrical input signals so as to provide said single cell with multibit storage capabilities. The memory element also includes a pair of spacedly disposed contacts for supplying the electrical input signal to set the memory material to a selected resistance value within the dynamic range. At least a filamentary portion of the singIe cell memory element being setable, by the selected electrical signal to any resistance value in said dynamic range, regardless of the previous resistance value of said material. The memory element further includes a filamentary portion controlling means disposed between the volume of memory material and at least one of the spacedly disposed contacts. The controlling means defining the size and position of the filamentary portion during electrical formation of the memory element and limiting the size and confining the location of the filamentary portion during use of the memory element, thereby providing for a high current density within the filamentary portion of the single cell memory element upon input of a very low total current electrical signal to the spacedly disposed contacts.
摘要翻译：本发明包括电操作的直接覆盖的多位单个单元存储元件。存储元件包括限定单个单元存储元件的一定量的存储器材料。记忆材料的特征在于：（1）电阻值的大动态范围; 以及（2）响应于所选择的电输入信号在所述动态范围内被设置为多个电阻值之一的能力，以便向所述单个单元提供多位存储能力。存储元件还包括一对间隔设置的触点，用于提供电输入信号以将存储器材料设置在动态范围内的所选电阻值。所述单元存储元件的至少一个细长部分可通过所选择的电信号被设置成所述动态范围内的任何电阻值，而与所述材料的先前电阻值无关。存储元件还包括设置在存储器材料体积与间隔设置的触点中的至少一个之间的丝状部分控制装置。控制装置在存储元件的电气形成期间限定丝状部分的尺寸和位置，并且在存储元件的使用期间限制尺寸并限制丝状部分的位置，由此提供丝网部分内的高电流密度当输入非常低的总电流电信号到间隔布置的触点时，单个单元存储元件。

2. 发明授权

US5825046A Composite memory material comprising a mixture of phase-change memory material and dielectric material 失效
标题翻译：复合记忆材料包括相变记忆材料和电介质材料的混合物
公开(公告)号：US5825046A
公开(公告)日：1998-10-20
申请号：US739080
申请日：1996-10-28
申请人： Wolodymyr Czubatyj , Stanford R. Ovshinsky , David A. Strand , Patrick Klersy , Sergey Kostylev , Boil Pashmakov
发明人： Wolodymyr Czubatyj , Stanford R. Ovshinsky , David A. Strand , Patrick Klersy , Sergey Kostylev , Boil Pashmakov
IPC分类号： H01L27/10 , G11C16/02 , H01L27/105 , H01L45/00 , H01L47/00
CPC分类号： H01L45/06 , G11C13/0004 , H01L45/1233 , H01L45/1246 , H01L45/14 , H01L45/142 , H01L45/144 , H01L45/145 , H01L45/146 , H01L45/1625 , H01L45/1641 , G11C2213/35 , G11C2213/51 , G11C2213/72
摘要： A composite memory material comprising a mixture of active phase-change memory material and inactive dielectric material. The phase-change material includes one or more elements selected from the group consisting of Te, Se, Ge, Sb, Bi, Pb, Sn, As, S, Si, P, O and mixtures or alloys thereof. A single cell memory element comprising the aforementioned composite memory material, and a pair of spacedly disposed contacts.
摘要翻译：一种复合记忆材料，包括有源相变记忆材料和非活性介电材料的混合物。相变材料包括选自Te，Se，Ge，Sb，Bi，Pb，Sn，As，S，Si，P，O及其混合物或合金中的一种或多种元素。包括上述复合存储器材料的单个单元存储元件和一对间隔设置的触点。

3. 发明授权

US5933365A Memory element with energy control mechanism 失效
标题翻译：具有能量控制机制的记忆元件
公开(公告)号：US5933365A
公开(公告)日：1999-08-03
申请号：US878870
申请日：1997-06-19
申请人： Patrick Klersy , Boil Pashmakov , Wolodymyr Czubatyj , Sergey Kostylev , Stanford R. Ovshinsky
发明人： Patrick Klersy , Boil Pashmakov , Wolodymyr Czubatyj , Sergey Kostylev , Stanford R. Ovshinsky
IPC分类号： G11C17/00 , G11C11/56 , G11C16/02 , G11C19/08 , H01L27/24 , H01L45/00 , H01L47/00 , G11C11/00
CPC分类号： H01L45/1293 , G11C11/56 , G11C11/5678 , G11C13/0004 , H01L27/2463 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/1616 , H01L45/1625
摘要： An electrically operated, directly overwritable memory element comprising a volume of memory material having at least two electrical resistance values. The volume of memory material can be set to one of the resistance values in response to a selected electrical input signal without the need to be set to a specific starting or erased resistance value. The memory element includes resistive layers for controlling the distribution of electrical energy within the memory material, heating layers for transferring heat energy into the memory material, and thermal insulation layers for reducing the loss of heat energy from the memory material.
摘要翻译：一种电操作的直接可覆写的存储元件，包括具有至少两个电阻值的一定体积的存储材料。可以响应于所选择的电输入信号将存储器材料的体积设置为电阻值中的一个，而不需要将其设置为特定的起始或擦除电阻值。存储元件包括用于控制存储材料内的电能分布的电阻层，用于将热能传递到存储材料中的加热层，以及用于减少来自存储材料的热能损失的绝热层。

4. 发明申请

US20090057645A1 Memory element with improved contacts 审中-公开
标题翻译：记忆元素改善了接触
公开(公告)号：US20090057645A1
公开(公告)日：2009-03-05
申请号：US12290353
申请日：2008-10-30
申请人： Sergey A. Kostylev , Stanford R. Ovshinsky , Wolodymyr Czubatyj , Patrick Klersy , Boil Pashmakov
发明人： Sergey A. Kostylev , Stanford R. Ovshinsky , Wolodymyr Czubatyj , Patrick Klersy , Boil Pashmakov
IPC分类号： H01L45/00
CPC分类号： G11C11/56 , G11C11/5678 , G11C13/0004 , H01L27/2436 , H01L27/2472 , H01L45/06 , H01L45/122 , H01L45/126 , H01L45/144 , H01L45/1675 , H01L45/1683
摘要： A phase-change memory element comprising a phase-change memory material, a first electrical contact and a second electrical contact. At least one of the electrical contacts having a sidewall electrically coupled to the memory material.
摘要翻译：一种相变存储元件，包括相变存储器材料，第一电触头和第二电触头。电触点中的至少一个具有电耦合到存储器材料的侧壁。

5. 发明授权

US07473574B2 Memory element with improved contacts 有权
公开(公告)号：US07473574B2
公开(公告)日：2009-01-06
申请号：US11394433
申请日：2006-04-01
申请人： Sergey A. Kostylev , Stanford R. Ovshinsky , Wolodymyr Czubatyj , Patrick Klersy , Boil Pashmakov
发明人： Sergey A. Kostylev , Stanford R. Ovshinsky , Wolodymyr Czubatyj , Patrick Klersy , Boil Pashmakov
IPC分类号： H01L21/00
CPC分类号： G11C11/56 , G11C11/5678 , G11C13/0004 , H01L27/2436 , H01L27/2472 , H01L45/06 , H01L45/122 , H01L45/126 , H01L45/144 , H01L45/1675 , H01L45/1683
摘要： A phase-change memory element comprising a phase-change memory material, a first electrical contact and a second electrical contact. At least one of the electrical contacts having a sidewall electrically coupled to the memory material.

6. 发明授权

US5406509A Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom 失效
标题翻译：电可擦除的直接可重写的多单元单元存储元件和由其制造的阵列
公开(公告)号：US5406509A
公开(公告)日：1995-04-11
申请号：US46249
申请日：1993-04-12
申请人： Stanford R. Ovshinsky , Qiuyi Ye , David A. Strand , Wolodymyr Czubatyj
发明人： Stanford R. Ovshinsky , Qiuyi Ye , David A. Strand , Wolodymyr Czubatyj
IPC分类号： G11C11/56 , G11C16/02 , H01L27/24 , H01L45/00 , G11C17/14
CPC分类号： G11C13/0004 , G11C11/56 , G11C11/5678 , H01L27/2409 , H01L45/085 , H01L45/1233 , H01L45/144 , G11C13/04 , G11C2213/72
摘要： The present invention comprises an electrically operated, directly overwritable, multibit, single-cell memory element. The memory element includes a volume of memory material which defines the single cell memory element. The memory material is characterized by: (1) a large dynamic range of electrical resistance values; and (2) the ability to be set at one of a plurality of resistance values within said dynamic range in response to selected electrical input signals so as to provide said single cell with multibit storage capabilities. The memory element also includes a pair of spacedly disposed contacts for supplying the electrical input signal to set the memory material to a selected resistance value within the dynamic range. At least a filamentary portion of the single cell memory element being setable, by the selected electrical signal to any resistance value in said dynamic range, regardless of the previous resistance value of said material. The memory element further includes a filamentary portion controlling means disposed between the volume of memory material and at least one of the spacedly disposed contacts. The controlling means defining the size and position of the filamentary portion during electrical formation of the memory element and limiting the size and confining the location of the filamentary portion during use of the memory element, thereby providing for a high current density within the filamentary portion of the single cell memory element upon input of a very low total current electrical signal to the spacedly disposed contacts.
摘要翻译：本发明包括电操作的直接覆盖的多位单个单元存储元件。存储元件包括限定单个单元存储元件的一定量的存储器材料。记忆材料的特征在于：（1）电阻值的大动态范围; 以及（2）响应于所选择的电输入信号在所述动态范围内被设置为多个电阻值之一的能力，以便向所述单个单元提供多位存储能力。存储元件还包括一对间隔设置的触点，用于提供电输入信号以将存储器材料设置在动态范围内的所选电阻值。所述单个单元存储元件的至少一个细长部分可被所选择的电信号设定到所述动态范围内的任何电阻值，而与所述材料的先前电阻值无关。存储元件还包括设置在存储器材料体积与间隔设置的触点中的至少一个之间的丝状部分控制装置。控制装置在存储元件的电气形成期间限定丝状部分的尺寸和位置，并且在存储元件的使用期间限制尺寸并限制丝状部分的位置，由此提供丝网部分内的高电流密度当输入非常低的总电流电信号到间隔布置的触点时，单个单元存储元件。

7. 发明授权

US5335219A Homogeneous composition of microcrystalline semiconductor material, semiconductor devices and directly overwritable memory elements fabricated therefrom, and arrays fabricated from the memory elements 失效
标题翻译：微晶半导体材料，半导体器件和由其制造的直接可重写存储元件的均匀组成，以及由存储元件制造的阵列
公开(公告)号：US5335219A
公开(公告)日：1994-08-02
申请号：US768139
申请日：1991-09-30
申请人： Stanford R. Ovshinsky , Stephen J. Hudgens , David A. Strand , Wolodymyr Czubatyj , Jesus Gonzalez-Hernandez , Hellmut Fritzsche , Qiuyi Ye , Sergey A. Kostylev , Benjamin S. Chao
发明人： Stanford R. Ovshinsky , Stephen J. Hudgens , David A. Strand , Wolodymyr Czubatyj , Jesus Gonzalez-Hernandez , Hellmut Fritzsche , Qiuyi Ye , Sergey A. Kostylev , Benjamin S. Chao
IPC分类号： H01L27/10 , G11C11/56 , G11C16/02 , H01H45/00 , H01L21/8247 , H01L27/105 , H01L27/115 , H01L27/24 , H01L29/788 , H01L29/792 , H01L45/00 , G11C13/00
CPC分类号： G11C11/56 , G11C11/5678 , G11C13/0004 , H01L27/115 , G11C13/04
摘要： A unique class of microcrystalline semiconductor materials which can be modulated, within a crystalline phase, to assume any one of a large dynamic range of different Fermi level positions while maintaining a substantially constant band gap over the entire range, even after a modulating field has been removed. A solid state, directly overwritable, electronic and optical, non-volatile, high density, low cost, low energy, high speed, readily manufacturable, multibit single cell memory based upon the novel switching characteristics provided by said unique class of semiconductor materials, which memory exhibits orders of magnitude higher switching speeds at remarkably reduced energy levels. The novel memory of the instant invention is in turn characterized, inter alia, by numerous stable and non-volatile detectable configurations of local atomic order, which configurations can be selectively and repeatably accessed by input signals of varying levels.
摘要翻译：一种独特的微晶半导体材料，其可以在晶相内被调制以承担不同费米能级位置的大动态范围中的任何一种，同时在整个范围内保持基本恒定的带隙，即使在调制场已经被删除。基于由所述独特类型的半导体材料提供的新型开关特性的固态，直接可重写的，电子和光学，非易失性，高密度，低成本，低能量，高速度，容易制造的多单元单元存储器，其中存储器在显着降低的能量水平下显示出高数量级的开关速度。特别地，本发明的新颖记忆特征还在于本地原子序列的许多稳定和非易失性可检测配置，其可通过不同等级的输入信号选择性地和可重复地访问这些配置。

8. 发明授权

US5414271A Electrically erasable memory elements having improved set resistance stability 失效
标题翻译：具有改进的电阻稳定性的电可擦除存储元件
公开(公告)号：US5414271A
公开(公告)日：1995-05-09
申请号：US789234
申请日：1991-11-07
申请人： Stanford R. Ovshinsky , Stephen J. Hudgens , Wolodymyr Czubatyj , David A. Strand , Guy C. Wicker
发明人： Stanford R. Ovshinsky , Stephen J. Hudgens , Wolodymyr Czubatyj , David A. Strand , Guy C. Wicker
IPC分类号： G11C11/56 , G11C16/02 , H01L27/24 , H01L45/00
CPC分类号： G11C13/0004 , G11C11/56 , G11C11/5678 , H01L27/2409 , H01L27/2463 , H01L45/06 , H01L45/1233 , H01L45/141 , H01L45/144 , H01L45/1625 , G11C13/04 , G11C2213/72
摘要： A solid state, directly overwritable, electronic, non-volatile, high density, low cost, low energy, high speed, readily manufacturable, multibit single cell memory or control array based upon the novel switching characteristics provided by said unique class of semiconductor materials characterized by a large dynamic range of reversible Fermi level positions. The memory or control elements from which the array is fabricated exhibit orders of magnitude higher switching speeds at remarkably reduced energy levels. The novel memory elements of the instant invention are in turn characterized, inter alia, by numerous stable and non-volatile detectable configurations of local atomic and/or electrode order, which configurations can be selectively and repeatably accessed by electric input signals of yawing energy level. The memory elements are further characterized by enhanced stability, which stability is achieved through the use of compositional modulation of the semiconductor material from which the memory elements are fabricated.
摘要翻译：基于由所述独特类型的半导体材料提供的新颖的开关特性，固态，直接可重写的，电子的，非易失性的，高密度的，低成本的，低能量的，高速的，容易制造的多单元单元存储器或控制阵列通过可逆的费米能级位置的大动态范围。制造阵列的存储器或控制元件在显着降低的能量水平下显示出更高的开关速度的数量级。本发明的新颖的记忆元件又特别包括局部原子和/或电极顺序的许多稳定和非易失性的可检测配置，这些配置可以通过偏转能级的电输入信号来选择性地和重复地访问。存储元件的特征还在于增强的稳定性，其通过使用制造存储元件的半导体材料的组成调制来实现稳定性。

9. 发明授权

US5341328A Electrically erasable memory elements having reduced switching current requirements and increased write/erase cycle life 失效
标题翻译：电可擦除存储元件具有降低的开关电流要求和增加的写入/擦除周期寿命
公开(公告)号：US5341328A
公开(公告)日：1994-08-23
申请号：US898635
申请日：1992-06-15
申请人： Stanford R. Ovshinsky , Stephen J. Hudgens , Wolodymyr Czubatyj , David A. Strand , Guy C. Wicker
发明人： Stanford R. Ovshinsky , Stephen J. Hudgens , Wolodymyr Czubatyj , David A. Strand , Guy C. Wicker
IPC分类号： G11C11/56 , G11C16/02 , H01L27/24 , H01L45/00
CPC分类号： G11C11/56 , G11C11/5678 , G11C13/0004 , H01L27/115 , H01L27/2409 , H01L27/2463 , H01L45/06 , H01L45/1233 , H01L45/1253 , H01L45/144 , H01L45/1625 , G11C13/04 , G11C2213/72
摘要： Disclosed herein is a solid state, directly overwritable, non-volatile, high density, low cost, low energy, high speed, readily manufacturable, single cell memory element having reduced switching current requirements and increased write/erase cycle life. The structurally modified memory element includes an electrical contact formed of amorphous silicon, either alone or in combination with a layer of amorphous carbon layer. The memory element exhibits orders of magnitude higher switching speeds at remarkably reduced switching energy levels. The novel memory elements of the instant invention are further characterized, inter alia, by at least two stable and non-volatile detectable configurations of local atomic and/or electronic order, which configurations can be selectively and repeatably accessed by electrical input signals of designated energies. The reduced switching current requirements and an increased write/erase cycle life are achieved by structurally modifying the electrical contact with the aforementioned layer of amorphous silicon.
摘要翻译：本文公开了具有降低的开关电流要求和增加的写入/擦除循环寿命的固态，直接可重写，非易失性，高密度，低成本，低能量，高速度，容易制造的单电池存储元件。结构改进的记忆元件包括由非晶硅形成的电接触，单独或与无定形碳层组合。存储元件在显着降低的开关能量水平下显示出更高的开关速度的数量级。本发明的新颖的记忆元件尤其通过局部原子和/或电子顺序的至少两个稳定和非易失性可检测配置来进一步表征，这些配置可以通过指定能量的电输入信号被选择性地和重复地访问。通过结构上改变与上述非晶硅层的电接触来实现降低的开关电流要求和增加的写入/擦除周期寿命。

10. 发明授权

US5296716A Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom 失效
标题翻译：电可擦除的直接可重写的多单元单元存储元件和由其制造的阵列
公开(公告)号：US5296716A
公开(公告)日：1994-03-22
申请号：US747053
申请日：1991-08-19
申请人： Stanford R. Ovshinsky , Wolodymyr Czubatyj , Quiyi Ye , David A. Strand , Stephen J. Hudgens
发明人： Stanford R. Ovshinsky , Wolodymyr Czubatyj , Quiyi Ye , David A. Strand , Stephen J. Hudgens
IPC分类号： H01L27/10 , G11C11/56 , G11C16/02 , H01H45/00 , H01L21/8247 , H01L27/105 , H01L27/115 , H01L27/24 , H01L29/788 , H01L29/792 , H01L45/00
CPC分类号： G11C11/56 , G11C11/5678 , G11C13/0004 , H01L27/115 , H01L27/2409 , H01L27/2463 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1675 , G11C13/04
摘要： A solid state, directly overwritable, electronic, non-volatile, high density, low cost, low energy, high speed, readily manufacturable, multibit single cell memory based upon phenomenologically novel electrical switching characteristics provided by a unique class of semiconductor materials in unique configurations, which memory exhibits orders of magnitude higher switching speeds at remarkably reduced energy levels. The novel memory of the instant invention is characterized, inter alia, by numerous stable and truly non-volatile detectable configurations of local atomic and/or electronic order, which can be selectively and repeatably accessed by electrical input signals of varying pulse voltage and duration.
摘要翻译：基于由独特类型的半导体材料提供的独特配置提供的现象学新颖的电开关特性的固态，直接可重写，电子，非易失性，高密度，低成本，低能量，高速度，易于制造的多位单电池存储器，哪个存储器在显着降低的能量水平下显示出高数量级的开关速度。特别地，本发明的新颖记忆特征在于由局部原子和/或电子顺序的许多稳定和真正的非易失性可检测配置，其可以通过变化的脉冲电压和持续时间的电输入信号来选择性地和重复地访问。

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