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1. 发明申请

US20120115274A1 Plasma Deposition of Amorphous Semiconductors at Microwave Frequencies 审中-公开
标题翻译：微波频率下非晶半导体的等离子体沉积
公开(公告)号：US20120115274A1
公开(公告)日：2012-05-10
申请号：US13355541
申请日：2012-01-22
申请人： Stanford R Ovshinsky , David Strand , Patrick Klersy , Boil Pashmakov
发明人： Stanford R Ovshinsky , David Strand , Patrick Klersy , Boil Pashmakov
IPC分类号： H01L31/18
CPC分类号： C23C16/511 , C23C16/24 , C23C16/545 , H01L21/02425 , H01L21/02532 , H01L21/02592 , H01L21/0262
摘要： Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus inhibits deposition on windows or other microwave transmission elements that couple microwave energy to deposition species. The apparatus includes a microwave applicator with conduits passing therethrough that carry deposition species. The applicator transfers microwave energy to the deposition species to transform them to a reactive state conducive to formation of a thin film material. The conduits physically isolate deposition species that would react to form a thin film material at the point of microwave power transfer. The deposition species are separately energized and swept away from the point of power transfer to prevent thin film deposition. The invention allows for the ultrafast formation of silicon-containing amorphous semiconductors that exhibit high mobility, low porosity, little or no Staebler-Wronski degradation, and low defect concentration.
摘要翻译：微波等离子体沉积薄膜光伏材料的设备和方法。该装置抑制在将微波能量耦合到沉积物质的窗口或其它微波传输元件上的沉积。该装置包括带有通过其的导管的微波施加器，其携带沉积物质。施加器将微波能量传递到沉积物质以将它们转变成有助于形成薄膜材料的反应状态。导管物理隔离在微波功率传递点反应以形成薄膜材料的沉积物质。沉积物质分开通电并从功率传递点扫除，以防止薄膜沉积。本发明允许超快速地形成显示高迁移率，低孔隙率，很少或没有Staebler-Wronski降解和低缺陷浓度的含硅非晶半导体。

2. 发明申请

US20100068870A1 High Speed Thin Film Deposition via Pre-Selected Intermediate 失效
标题翻译：通过预选中间体沉积高速薄膜
公开(公告)号：US20100068870A1
公开(公告)日：2010-03-18
申请号：US12209699
申请日：2008-09-12
申请人： Stanford R Ovshinsky
发明人： Stanford R Ovshinsky
IPC分类号： H01L21/00
CPC分类号： H01L21/02532 , C23C16/452 , C23C16/545 , H01L21/0262 , H01L31/1804 , Y02E10/547
摘要： A method and apparatus for the unusually high rate deposition of thin film materials on a stationary or continuous substrate. The method includes delivery of a pre-selected precursor intermediate to a deposition chamber and formation of a thin film material from the intermediate. The intermediate is formed outside of the deposition chamber and includes a metastable species such as a free radical. The intermediate is pre-selected to include a metastable species conducive to the formation of a thin film material having a low defect concentration. By forming a low defect concentration material, deposition rate is decoupled from material quality and heretofore unprecedented deposition rates are achieved. In one embodiment, the pre-selected precursor intermediate is SiH3. The method further includes combining the pre-selected precursor intermediate with a carrier gas, preferably in a deactivated state, where the carrier gas directs the transport of the pre-selected precursor intermediate to a substrate for deposition of the thin film material.
摘要翻译：一种用于在静止或连续衬底上非常高速率地沉积薄膜材料的方法和装置。该方法包括将预选择的前体中间体递送到沉积室，并从中间体形成薄膜材料。中间体形成在沉积室的外部，并且包括诸如自由基的亚稳态物质。预先选择中间体以包括有助于形成具有低缺陷浓度的薄膜材料的亚稳态物质。通过形成低缺陷浓度材料，沉积速率与材料质量分离，并且迄今为止实现了前所未有的沉积速率。在一个实施方案中，预先选择的前体中间体是SiH 3。该方法还包括将预先选择的前体中间体与优选处于去活化状态的载气组合，其中载气将预选择的前体中间体输送到用于沉积薄膜材料的基底。

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