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    • 5. 发明申请
    • Chemical resistant semiconductor processing chamber bodies
    • 耐化学腐蚀的半导体加工室体
    • US20080038448A1
    • 2008-02-14
    • US11731075
    • 2007-03-30
    • Arnold KholodenkoWing ChengHelen ChengMark MardelboymGrant PengKatrina Mikhaylichenko
    • Arnold KholodenkoWing ChengHelen ChengMark MardelboymGrant PengKatrina Mikhaylichenko
    • B05C11/00B05D3/00
    • H01L21/67051H01L21/6719
    • In one embodiment a chamber body enabling semiconductor processing equipment to be at least partially housed in the chamber body, the semiconductor processing equipment being configured to process a substrate using fluids is disclosed. The chamber body being comprised of a base material implemented to form the chamber body, the chamber body defined by at least a bottom surface and wall surfaces that are integrally connected to the bottom surface to enable capture of overflows of fluids during the processing of the substrate over the chamber body. Additionally, the base material is metallic. The chamber body also has a primer coat material disposed over and on the base material. The primer coat material has metallic constituents to define an integrated bond with the base material along with non-metallic constituents. The chamber body further includes a main coat material disposed over and on the primer coat material. The main coat material being defined from non-metallic constituents, the non-metallic constituents of the main coat material defining an integrated bond with the primer coat material. The main coat material defined to completely overlie all the metallic constituents of the primer coat.
    • 在一个实施例中,公开了使半导体处理设备能够至少部分地容纳在室主体中的室主体,半导体处理设备被配置为使用流体处理衬底。 腔室主体包括被实施成形成腔室主体的基底材料,至少由底部表面限定的腔体主体和与底部表面一体连接的壁表面,以在衬底的处理期间捕获流体溢出物 在房间的身体。 另外,基材是金属的。 腔室主体还具有设置在基底材料上方的底漆涂层材料。 底涂层材料具有金属成分,以与非金属组分一起界定与基材的整体结合。 室主体还包括设置在底漆涂层材料上和之上的主涂层材料。 主涂层材料由非金属组分定义,主涂层材料的非金属组分限定与底漆涂层材料的整体结合。 主涂层材料被定义为完全覆盖底漆涂层的所有金属成分。
    • 7. 发明授权
    • System, method and apparatus for maintaining separation of liquids in a controlled meniscus
    • 用于在受控弯液面中保持液体分离的系统,方法和装置
    • US08313582B2
    • 2012-11-20
    • US13370119
    • 2012-02-09
    • Robert O'DonnellCheng-Yu (Sean) LinArnold Kholodenko
    • Robert O'DonnellCheng-Yu (Sean) LinArnold Kholodenko
    • B08B3/00
    • B08B3/04H01L21/67034H01L21/67051
    • A system and method of forming and using a proximity head. The proximity head includes a head surface including a first zone, a second zone and an inner return zone. The first zone including a first flat surface region and multiple first discrete holes connected to a corresponding first conduit and arranged in a first row. The second zone including a second flat region and multiple second discrete holes connected to a corresponding second conduit. The inner return zone being disposed between and adjacent to the first zone and the second zone and including multiple inner return discrete holes connected to a corresponding inner return conduit and arranged in an inner return row. The first row and the inner return row are parallel. A portion of an edge of each of the inner return discrete holes is recessed into the head surface.
    • 形成和使用邻近头的系统和方法。 邻近头包括头表面,其包括第一区域,第二区域和内部返回区域。 所述第一区域包括第一平面区域和连接到对应的第一导管并且布置在第一排中的多个第一离散孔。 所述第二区域包括连接到相应的第二导管的第二平坦区域和多个第二离散孔。 所述内部返回区域设置在所述第一区域和所述第二区域之间并且邻近所述第二区域并且包括连接到相应的内部返回管道并布置在内部返回行中的多个内部返回离散孔。 第一行和内部返回行是平行的。 每个内部返回离散孔的边缘的一部分凹入头部表面。
    • 8. 发明授权
    • System, method and apparatus for maintaining separation of liquids in a controlled meniscus
    • 用于在受控弯液面中保持液体分离的系统,方法和装置
    • US08141566B2
    • 2012-03-27
    • US11820590
    • 2007-06-19
    • Robert O'DonnellCheng-Yu (Sean) LinArnold Kholodenko
    • Robert O'DonnellCheng-Yu (Sean) LinArnold Kholodenko
    • B08B3/04
    • B08B3/04H01L21/67034H01L21/67051
    • A system and method of forming and using a proximity head. The proximity head includes a head surface including a first zone, a second zone and an inner return zone. The first zone including a first flat surface region and multiple first discrete holes connected to a corresponding first conduit and arranged in a first row. The second zone including a second flat region and multiple second discrete holes connected to a corresponding second conduit. The inner return zone being disposed between and adjacent to the first zone and the second zone and including multiple inner return discrete hole connected to a corresponding inner return conduit and arranged in an inner return row. The first row and the inner return row are parallel. A portion of an edge of each of the inner return discrete holes is recessed into the head surface.
    • 形成和使用邻近头的系统和方法。 邻近头包括头表面,其包括第一区域,第二区域和内部返回区域。 所述第一区域包括第一平面区域和连接到对应的第一导管并且布置在第一排中的多个第一离散孔。 所述第二区域包括连接到相应的第二导管的第二平坦区域和多个第二离散孔。 内部返回区域设置在第一区域和第二区域之间并且邻近第一区域并且包括连接到相应的内部返回导管并且​​布置在内部返回行中的多个内部返回离散孔。 第一行和内部返回行是平行的。 每个内部返回离散孔的边缘的一部分凹入头部表面。
    • 9. 发明授权
    • Apparatus for regulating temperature of a process kit in a semiconductor wafer-processing chamber
    • 用于调节半导体晶片处理室中的处理套件的温度的装置
    • US06795292B2
    • 2004-09-21
    • US09861984
    • 2001-05-15
    • Dennis GrimardArnold KholodenkoAlex VeytserSenh ThachWing Cheng
    • Dennis GrimardArnold KholodenkoAlex VeytserSenh ThachWing Cheng
    • H01G2300
    • H01L21/67109H01L21/67103
    • An apparatus for reducing by-product formation in a semiconductor wafer-processing chamber. In a first embodiment, the apparatus comprises a chuck having a chucking electrode and a radially extending peripheral flange. A collar is disposed over the peripheral flange defining a first gap therebetween, and circumscribes the chuck. A heater element is embedded within the collar and adapted for connection to a power source. In a second embodiment, the apparatus comprises a chuck having a chucking electrode and a radially extending peripheral flange, and a collar having a heater element embedded therein. The collar is disposed over the peripheral flange to define a gap therebetween, and circumscribes the chuck. Moreover, a pedestal having a gas delivery system therein is disposed below the chuck and collar. In a third embodiment, the apparatus comprises a chuck having a chucking electrode and a radially extending peripheral flange, a collar, and a waste ring having a heater element embedded therein. The waste ring is disposed over the peripheral flange defining a gap therebetween, and circumscribes the chuck. The collar is chucked to the waste ring, and the waste ring is chucked to a pedestal support. Moreover, the waste ring and pedestal each have a gas delivery system therein for regulating the temperature of the collar.
    • 一种用于减少半导体晶片处理室中副产物形成的装置。 在第一实施例中,该装置包括具有夹紧电极和径向延伸的周边凸缘的卡盘。 套环设置在周边凸缘之上,限定了它们之间的第一间隙,并限制卡盘。 加热器元件嵌入在轴环内并且适于连接到电源。 在第二实施例中,该装置包括具有夹紧电极和径向延伸的周边凸缘的卡盘以及嵌入其中的加热器元件的套环。 套环设置在周边凸缘上方以在其间形成间隙并限制卡盘。 此外,其中具有气体输送系统的基座设置在卡盘和轴环的下方。 在第三实施例中,该装置包括具有夹紧电极和径向延伸的周边凸缘,套环和具有嵌入其中的加热器元件的废料环的卡盘。 废环设置在周边凸缘之上,限定了它们之间的间隙,并且围绕卡盘。 将衣领卡在废物环上,将废物环卡在基座支架上。 此外,废环和底座各自具有用于调节套环温度的气体输送系统。