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    • 1. 发明授权
    • Methodology for making logic circuits
    • 制作逻辑电路的方法
    • US4591993A
    • 1986-05-27
    • US554148
    • 1983-11-21
    • William R. GriffinLawrence G. Heller
    • William R. GriffinLawrence G. Heller
    • H01L21/8238H01L21/82H01L27/092H01L27/112H01L27/118H03K19/0948H03K19/173H03K19/094
    • H03K19/0948H01L27/112
    • A methodology is provided for reducing an arbitrary Boolean logic expression to static CMOS circuits by the use of a general matrix of P channel devices and N channel devices which are interconnected in accordance with the terms of Boolean logic expressions derived from a truth table. More specifically, from a Boolean expression a sum-of-products expression giving the 1 binary data outputs of a truth table having a 0 input is found. This is accomplished by complementing, or barring, the literals which are a binary 1 when the output is 1 and leaving true or unbarred the literals that are a binary 0. Then each input of a given product term is applied to the control gate of a P channel device, which devices are connected in series with one end tied to a source of potential and the other end of the series circuit connected to an output terminal. Each product term is arranged in parallel with other P channel device series circuits to form one half of a complete logic matrix. Similarly, for the other half of the matrix, a sum-of-products expression giving the binary 0 outputs of a truth table having a binary 1 for an input is found. Each input of a given product term is applied to the control gate of an N channel device, which devices are connected in series with one end tied to a potential reference point, such as ground, and the other end of the series circuit is connected to the output terminal. Each product term is arranged in parallel with other N channel device series circuits.
    • 提供了一种通过使用根据从真值表导出的布尔逻辑表达式的术语互连的P通道器件和N沟道器件的通用矩阵来将静态CMOS电路的任意布尔逻辑表达式减少的方法。 更具体地,从布尔表达式中,找到给出具有0输入的真值表的1个二进制数据输出的乘积和表达式表达式。 这是通过补充或限制当输出为1时为二进制1的文字,并将真实的或未被标记为二进制0的文字来实现的。然后,将给定产品项的每个输入应用于 P通道器件,这些器件串联连接到电位源的一端,串联电路的另一端连接到输出端子。 每个产品术语与其他P通道器件串联电路并联布置,形成完整逻辑矩阵的一半。 类似地,对于矩阵的另一半,找到给出用于输入的具有二进制1的真值表的二进制0输出的乘积和表达式。 给定产品项的每个输入被施加到N沟道器件的控制栅极,这些器件与连接到诸如地的参考点的一端串联连接,串联电路的另一端连接到 输出端子。 每个产品术语与其他N通道器件串联电路并联布置。
    • 4. 发明授权
    • Calibrated sensing system
    • 校准传感系统
    • US4300210A
    • 1981-11-10
    • US108242
    • 1979-12-27
    • Satya N. ChakravartiLawrence G. HellerWilbur D. Pricer
    • Satya N. ChakravartiLawrence G. HellerWilbur D. Pricer
    • G11C11/409G11C11/4091G11C11/56G11C19/36H03K5/08G11C27/00G11C11/24G11C11/40
    • G11C11/565G11C11/4091G11C19/36G11C7/06
    • A calibrated sensing system is provided in accordance with the teachings of this invention for sensing charge in a storage medium, such as a storage capacitor, coupled to an access or bit/sense line which compensates for most sources of variability in the storage medium and in the access line. In the system, the unknown charge stored in the storage medium is transferred to a first capacitor or potential well via the access line. A high charge state of the storage medium is written into the storage medium and known fractional packets of charge are prepared therefrom, transferred selectively to a second capacitor or potential well and compared with the unknown charge in the first potential to determine the relative level of the unknown charge that was stored in the storage medium. By selectively using two or more fractional packets of charge multilevel sensing is performed.
    • 根据本发明的教导,提供了一种校准的感测系统,用于感测存储介质(例如存储电容器)中的电荷,该存储介质耦合到访问或位/检测线,其补偿存储介质中的大部分变异源,并且 接入线路。 在系统中,存储在存储介质中的未知电荷经由存取线路传送到第一电容器或势阱。 将存储介质的高电荷状态写入存储介质,并且从其准备已知的分数电荷分组,将其选择性地传输到第二电容器或势阱,并与第一电位中的未知电荷进行比较,以确定第 存储在存储介质中的未知电荷。 通过选择性地使用两个或更多个电荷多级感测的分数分组。
    • 5. 发明授权
    • Charge-transfer binary search generating circuit
    • 电荷转移二进制搜索生成电路
    • US4137464A
    • 1979-01-30
    • US825016
    • 1977-08-16
    • Lawrence G. HellerLewis M. Terman
    • Lawrence G. HellerLewis M. Terman
    • H03M1/44G11C11/56G11C19/18G11C19/36G11C27/02H03K4/02H03M1/00H03M1/66
    • G11C27/024G11C19/186G11C19/36H03M1/804
    • A bucket brigade circuit is described for generating a sequence of packets of charge carriers of the form Q.sub.R /2, Q.sub.R /4, Q.sub.R /8....Q.sub.R /2.sup.N where N is an integer. The charge packets thus generated can be employed in combinations in either digital-to-analog or analog-to-digital converters. The charge generation circuit requires two equal capacitors which are used for charge redistribution. To obtain accurate quantities of charge in the generated charge packets the capacitors employed should be large, however the use of large capacitors results in low operating speed because of the large charge transfer time constants involved. The described circuit provides a scheme to reduce charge transfer time constants and therefore obtain greater speed while still permitting the use of large capacitors for high accuracy. The circuit includes a small coupling capacitor connected in series with one of the charge redistribution capacitors to produce a total capacitance which is equal to or smaller than the coupling capacitance. The sequence of charge carriers produced by the circuit can be injected into either a bucket brigade circuit or a charge-coupled-device circuit for use, for example, in digital-to-analog and analog-to-digital converters.
    • 描述了用于产生形式为QR / 2,QR / 4,QR / 8 .... QR / 2N的电荷载体的序列序列的桶旅电路,其中N是整数。 这样产生的电荷包可以以数模转换器或模数转换器的组合使用。 电荷产生电路需要用于电荷再分配的两个相等的电容器。 为了在产生的电荷包中获得准确的电荷量,所使用的电容应该是大的,然而由于涉及大的电荷转移时间常数,使用大的电容器导致低的操作速度。 所描述的电路提供了一种减少电荷转移时间常数并因此获得更高速度同时允许使用大电容器以获得高精度的方案。 电路包括与电荷再分配电容器中的一个串联连接的小耦合电容器,以产生等于或小于耦合电容的总电容。 由电路产生的电荷载体的序列可以被注入到例如在数模转换器和模数转换器中使用的桶式电路或电荷耦合器件电路中。
    • 7. 发明授权
    • Leak tolerant low power dynamic circuits
    • 耐漏电低功率动态电路
    • US5831452A
    • 1998-11-03
    • US803582
    • 1997-02-20
    • Edward Joseph NowakMinh Ho TongLawrence G. Heller
    • Edward Joseph NowakMinh Ho TongLawrence G. Heller
    • H03K19/096H03K19/0948
    • H03K19/0963
    • A novel precharge circuit is provided for dynamic CMOS logic circuits which are immune to leakage currents and reduce overall power consumption. The circuit comprises a precharge transistor for precharging a node to a high voltage level indicting a first logic state during a standby mode. Thereafter, during an active mode, the node may or may not be discharged by connected logic circuitry. If the node is discharged, then an additional transistor is provided to inhibit the precharging of the already charged node during a subsequent standby mode. Similarly, if the node is not discharged, a small keeper transistor is provided to keep the node at a fully precharged level.
    • 为动态CMOS逻辑电路提供了一种新颖的预充电电路,其免于漏电流并降低总体功耗。 电路包括用于在待机模式期间将节点预充电到指示第一逻辑状态的高电压电平的预充电晶体管。 此后,在活动模式期间,节点可以被连接的逻辑电路放电,也可以不被放电。 如果节点放电,则提供附加晶体管以在随后的待机模式期间禁止已经充电的节点的预充电。 类似地,如果节点不被放电,则提供小的保持晶体管以保持节点处于完全预充电电平。
    • 9. 发明授权
    • Permanent or semipermanent charge transfer storage systems
    • 永久或半永久电荷转移存储系统
    • US4230954A
    • 1980-10-28
    • US974409
    • 1978-12-29
    • Lawrence G. Heller
    • Lawrence G. Heller
    • G11C17/00G11C11/35G11C14/00G11C16/04G11C19/28H01L21/8246H01L27/108H01L27/112H03K5/00G11C11/34H01L29/34H01L29/78
    • H01L27/108G11C11/35G11C14/00G11C16/0466G11C19/282
    • Storage systems are provided with memory cells made of devices having different voltage thresholds for storing information permanently or semipermanently. The devices are arranged adjacent to each other and communicating with a diffusion region in a semiconductor substrate. Information is sensed by detecting the charge transferred from a selected cell to the diffusion region. In an embodiment of the invention, a P-type substrate has an N+ diffusion region formed therein with a plurality of adjacent and parallelly arranged word lines insulated from the substrate and disposed adjacent to the N+ diffusion region. A P+ region, preferably implanted into the substrate, is disposed under selected segments of the word lines to provide devices having a first or high threshold voltage magnitude. The remaining devices which are not associated with a P-30 region have a second or low threshold voltage magnitude. By applying a voltage of the same magnitude to each of the word lines, potential wells are formed which are filled by charge or carriers from the diffusion region. Since the potential wells associated with the high threshold devices hold less charge than do the low threshold devices, a charge or voltage sensing circuit connected to the N+ diffusion region is used to detect the amount of charge flowing between the wells and the diffusion region to thus identify the high and low threshold devices when the voltage on the selected word line is decreased. By eliminating the P+ regions and storing charge, e.g., electrons, at selected locations under the word lines in dual insulating layers, the cells may be electrically programmable.
    • 存储系统具有由具有不同电压阈值的设备制成的存储单元,用于永久地或半永久地存储信息。 器件彼此相邻布置并与半导体衬底中的扩散区域连通。 通过检测从所选择的单元传输到扩散区的电荷来感测信息。 在本发明的一个实施例中,P型衬底具有形成在其中的多个相邻且平行布置的字线的N +扩散区,其与衬底绝缘并且邻近于N +扩散区设置。 优选地植入衬底中的P +区被布置在字线的选定段下方以提供具有第一或高阈值电压幅度的器件。 与P-30区域不相关的其余器件具有第二或低阈值电压幅度。 通过向每个字线施加相同大小的电压,形成由扩散区域的电荷或载流子填充的势阱。 由于与高阈值器件相关联的势阱比低阈值器件具有更少的电荷,所以使用连接到N +扩散区的电荷或电压感测电路来检测在阱和扩散区之间流动的电荷量,从而 当所选字线上的电压降低时识别高和低阈值器件。 通过在双重绝缘层中的字线下方的选定位置处消除P +区并且将电荷例如存储,电池可以是电可编程的。
    • 10. 发明授权
    • Self biased differential amplifier with hysteresis
    • 具有滞后的自偏置差分放大器
    • US6118318A
    • 2000-09-12
    • US853963
    • 1997-05-09
    • John A. FifieldLawrence G. Heller
    • John A. FifieldLawrence G. Heller
    • H03K3/3525H03K3/295H03K19/0948
    • H03K3/3525
    • A self biased differential amplifier has a switching point accurately set according to a reference voltage. DC hysteresis is provided, by a circuit internal to the differential amplifier. The amplifier has an input circuit having first and second series connected transistors, wherein the beta ratio of these first and second transistors is changed by enabling an additional transistor of a hysteresis circuit according to an output state of the differential amplifier. When the output state is "high", the switching point is decreased in order that temporary small drops (due to noise or glitches) in the input signal are ignored. Conversely, when the output state is "low", the switching point is increased in order that temporary small increases in the input signal are ignored.
    • 自偏置差分放大器具有根据参考电压精确设定的开关点。 通过差分放大器内部的电路提供直流滞后。 放大器具有输入电路,该输入电路具有第一和第二串联连接的晶体管,其中通过根据差分放大器的输出状态启用滞后电路的附加晶体管来改变这些第一和第二晶体管的β比。 当输出状态为“高”时,切换点减小,以便忽略输入信号中的临时小的下降(由于噪声或毛刺)。 相反,当输出状态为“低”时,切换点增加,以便忽略输入信号的临时小的增加。